KR100408539B1 - 커패시터를구비한반도체장치및그제조방법 - Google Patents

커패시터를구비한반도체장치및그제조방법 Download PDF

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Publication number
KR100408539B1
KR100408539B1 KR10-1998-0038710A KR19980038710A KR100408539B1 KR 100408539 B1 KR100408539 B1 KR 100408539B1 KR 19980038710 A KR19980038710 A KR 19980038710A KR 100408539 B1 KR100408539 B1 KR 100408539B1
Authority
KR
South Korea
Prior art keywords
film
lower electrode
dielectric film
substrate
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-1998-0038710A
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English (en)
Korean (ko)
Other versions
KR19990062504A (ko
Inventor
고이찌 기시로
마사끼 요시마루
Original Assignee
오끼 덴끼 고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오끼 덴끼 고오교 가부시끼가이샤 filed Critical 오끼 덴끼 고오교 가부시끼가이샤
Publication of KR19990062504A publication Critical patent/KR19990062504A/ko
Application granted granted Critical
Publication of KR100408539B1 publication Critical patent/KR100408539B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
KR10-1998-0038710A 1997-12-09 1998-09-18 커패시터를구비한반도체장치및그제조방법 Expired - Fee Related KR100408539B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9338867A JPH11177048A (ja) 1997-12-09 1997-12-09 半導体素子およびその製造方法
JP97-338867 1997-12-09

Publications (2)

Publication Number Publication Date
KR19990062504A KR19990062504A (ko) 1999-07-26
KR100408539B1 true KR100408539B1 (ko) 2004-06-09

Family

ID=18322149

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1998-0038710A Expired - Fee Related KR100408539B1 (ko) 1997-12-09 1998-09-18 커패시터를구비한반도체장치및그제조방법

Country Status (2)

Country Link
JP (1) JPH11177048A (cs)
KR (1) KR100408539B1 (cs)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100624926B1 (ko) * 1999-08-04 2006-09-19 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
KR100652354B1 (ko) * 1999-09-15 2006-11-30 삼성전자주식회사 하부전극과 콘택 플러그 사이에 낮은 접촉 저항을 갖는 반도체장치의 커패시터 및 그 제조방법
JP3317295B2 (ja) 1999-12-16 2002-08-26 日本電気株式会社 容量素子の製造方法
JP2002064144A (ja) * 2000-05-22 2002-02-28 Tokyo Electron Ltd タンタル酸化物膜を絶縁膜として有するキャパシタの製造方法
KR100464404B1 (ko) * 2001-07-27 2005-01-03 삼성전자주식회사 반도체 장치의 제조 방법
KR100443362B1 (ko) * 2002-04-26 2004-08-09 주식회사 하이닉스반도체 2단계 열처리를 적용한 반도체 소자의 캐패시터 제조방법
JP2004289046A (ja) 2003-03-25 2004-10-14 Renesas Technology Corp キャパシタを有する半導体装置の製造方法
JP5627166B2 (ja) * 2007-05-09 2014-11-19 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体記憶装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299601A (ja) * 1992-02-20 1993-11-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH065810A (ja) * 1992-06-18 1994-01-14 Matsushita Electron Corp 半導体装置
JPH0917973A (ja) * 1995-06-30 1997-01-17 Mitsubishi Electric Corp 半導体記憶装置及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299601A (ja) * 1992-02-20 1993-11-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH065810A (ja) * 1992-06-18 1994-01-14 Matsushita Electron Corp 半導体装置
JPH0917973A (ja) * 1995-06-30 1997-01-17 Mitsubishi Electric Corp 半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
KR19990062504A (ko) 1999-07-26
JPH11177048A (ja) 1999-07-02

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