JPH10256602A - 半導体発光素子 - Google Patents

半導体発光素子

Info

Publication number
JPH10256602A
JPH10256602A JP5723597A JP5723597A JPH10256602A JP H10256602 A JPH10256602 A JP H10256602A JP 5723597 A JP5723597 A JP 5723597A JP 5723597 A JP5723597 A JP 5723597A JP H10256602 A JPH10256602 A JP H10256602A
Authority
JP
Japan
Prior art keywords
electrode
light emitting
sheet resistance
emitting device
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5723597A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10256602A5 (enExample
Inventor
Shigetoshi Ito
茂稔 伊藤
Taiji Morimoto
泰司 森本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5723597A priority Critical patent/JPH10256602A/ja
Publication of JPH10256602A publication Critical patent/JPH10256602A/ja
Publication of JPH10256602A5 publication Critical patent/JPH10256602A5/ja
Pending legal-status Critical Current

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JP5723597A 1997-03-12 1997-03-12 半導体発光素子 Pending JPH10256602A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5723597A JPH10256602A (ja) 1997-03-12 1997-03-12 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5723597A JPH10256602A (ja) 1997-03-12 1997-03-12 半導体発光素子

Publications (2)

Publication Number Publication Date
JPH10256602A true JPH10256602A (ja) 1998-09-25
JPH10256602A5 JPH10256602A5 (enExample) 2005-01-20

Family

ID=13049884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5723597A Pending JPH10256602A (ja) 1997-03-12 1997-03-12 半導体発光素子

Country Status (1)

Country Link
JP (1) JPH10256602A (enExample)

Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000036619A (ja) * 1998-05-13 2000-02-02 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2001007398A (ja) * 1999-06-08 2001-01-12 Agilent Technol Inc ｐ型ＧａＮ層に透光性接触部を形成する方法
WO2001061765A1 (de) * 2000-02-15 2001-08-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung
WO2001073858A1 (fr) * 2000-03-31 2001-10-04 Toyoda Gosei Co., Ltd. Dispositif a semi-conducteur de nitrure du groupe iii
WO2001091194A1 (de) * 2000-05-23 2001-11-29 Osram Opto Semiconductors Gmbh Bauelement für die optoelektronik und verfahren zu dessen herstellung
JP2003046127A (ja) * 2001-05-23 2003-02-14 Sanyo Electric Co Ltd 窒化物系半導体発光素子
JP2003110139A (ja) * 2001-09-28 2003-04-11 Sanyo Electric Co Ltd 窒化物系半導体発光素子
JP2003179263A (ja) * 2002-11-11 2003-06-27 Seiwa Electric Mfg Co Ltd 窒化ガリウム系半導体発光素子
JP2003524295A (ja) * 1999-12-01 2003-08-12 クリー・ライティング・カンパニー 改良された電流拡散構造を有するスケーラブルｌｅｄ
DE10203809A1 (de) * 2002-01-31 2003-08-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
US6730939B2 (en) 2000-02-15 2004-05-04 Osram Opto Semiconductors Gmbh Radiation emitting semiconductor device
US6835958B2 (en) 2002-02-06 2004-12-28 Toyoda Gosei Co., Ltd. Light-emitting device
JP2005123501A (ja) * 2003-10-20 2005-05-12 Toyoda Gosei Co Ltd 半導体発光素子
JP2005197289A (ja) * 2003-12-26 2005-07-21 Nichia Chem Ind Ltd 窒化物半導体発光素子およびその製造方法
JP2006024913A (ja) * 2004-06-09 2006-01-26 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子用透光性正極および発光素子
JP2006156590A (ja) * 2004-11-26 2006-06-15 Mitsubishi Cable Ind Ltd 発光ダイオード
JP2007042850A (ja) * 2005-08-03 2007-02-15 Showa Denko Kk ｐｎ接合型化合物半導体発光ダイオード
JP2007287757A (ja) * 2006-04-12 2007-11-01 Rohm Co Ltd 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法
JP2007311506A (ja) * 2006-05-17 2007-11-29 Sanken Electric Co Ltd 過電圧保護素子を伴なった半導体発光装置
JP2008108905A (ja) * 2006-10-25 2008-05-08 Nichia Chem Ind Ltd 半導体発光素子
JP2009043934A (ja) * 2007-08-08 2009-02-26 Toyoda Gosei Co Ltd フリップチップ型発光素子
US7645689B2 (en) 2005-01-19 2010-01-12 Samsung Electro-Mechanics Co., Ltd. Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same
JP2011171743A (ja) * 2010-02-18 2011-09-01 Lg Innotek Co Ltd 発光素子及び発光素子パッケージ
GB2482110A (en) * 2010-07-05 2012-01-25 Cambridge Display Tech Ltd OLED lighting element with electrical busbar and tracks optimized to match current density of diode.
JP2012033953A (ja) * 2011-10-07 2012-02-16 Stanley Electric Co Ltd 発光素子及びその製造方法
JP2012054525A (ja) * 2010-08-04 2012-03-15 Toshiba Corp 半導体発光素子
JP2012060188A (ja) * 2011-12-26 2012-03-22 Toshiba Corp 半導体発光素子
JP2012138465A (ja) * 2010-12-27 2012-07-19 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法およびｉｉｉ族窒化物半導体発光素子、ランプ、電子機器、機械装置
JP2012186427A (ja) * 2011-03-08 2012-09-27 Toshiba Corp 半導体発光素子及びその製造方法
JP2012186196A (ja) * 2011-03-03 2012-09-27 Toshiba Corp 半導体発光素子及びその製造方法
JP2012186195A (ja) * 2011-03-03 2012-09-27 Toshiba Corp 半導体発光素子及びその製造方法
KR101280400B1 (ko) * 2010-02-09 2013-07-01 에피스타 코포레이션 광전 소자 및 그 제조방법
WO2014073139A1 (ja) * 2012-11-08 2014-05-15 パナソニック株式会社 紫外半導体発光素子およびその製造方法
US8981420B2 (en) 2005-05-19 2015-03-17 Nichia Corporation Nitride semiconductor device
JP2015061072A (ja) * 2013-09-17 2015-03-30 隆達電子股▲ふん▼有限公司 発光ダイオード
US9537056B2 (en) 2010-02-18 2017-01-03 Lg Innotek Co., Ltd. Light emitting device
JP2019192731A (ja) * 2018-04-23 2019-10-31 旭化成株式会社 窒化物半導体装置、窒化物半導体装置の製造方法
US11094869B2 (en) 2018-01-15 2021-08-17 Lg Chem, Ltd. Transparent light emitting device display
JP2023037267A (ja) * 2021-09-03 2023-03-15 株式会社東芝 面発光型半導体発光装置

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49137458U (enExample) * 1973-03-26 1974-11-26
JPS5889956U (ja) * 1981-12-11 1983-06-17 三洋電機株式会社 発光ダイオ−ド素子
JPH01225178A (ja) * 1988-03-03 1989-09-08 Mitsubishi Electric Corp 発光ダイオード
JPH03101561U (enExample) * 1990-02-01 1991-10-23
JPH06338632A (ja) * 1993-05-31 1994-12-06 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体発光素子
JPH0794783A (ja) * 1993-09-21 1995-04-07 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体発光素子
JPH07111339A (ja) * 1993-10-12 1995-04-25 Sumitomo Electric Ind Ltd 面発光型半導体発光装置
JPH07288340A (ja) * 1994-04-19 1995-10-31 Mitsubishi Cable Ind Ltd 発光素子およびその製造方法
JPH0832180A (ja) * 1994-07-11 1996-02-02 Sony Corp 半導体発光素子
JPH08316525A (ja) * 1995-05-13 1996-11-29 Temic Telefunken Microelectron Gmbh 発光ダイオード
JPH08330631A (ja) * 1995-03-24 1996-12-13 Sanyo Electric Co Ltd 半導体発光素子およびその製造方法
JPH08340131A (ja) * 1996-06-20 1996-12-24 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体素子
JPH10135519A (ja) * 1996-09-09 1998-05-22 Toshiba Corp 半導体発光素子およびその製造方法

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49137458U (enExample) * 1973-03-26 1974-11-26
JPS5889956U (ja) * 1981-12-11 1983-06-17 三洋電機株式会社 発光ダイオ−ド素子
JPH01225178A (ja) * 1988-03-03 1989-09-08 Mitsubishi Electric Corp 発光ダイオード
JPH03101561U (enExample) * 1990-02-01 1991-10-23
JPH06338632A (ja) * 1993-05-31 1994-12-06 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体発光素子
JPH0794783A (ja) * 1993-09-21 1995-04-07 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体発光素子
JPH07111339A (ja) * 1993-10-12 1995-04-25 Sumitomo Electric Ind Ltd 面発光型半導体発光装置
JPH07288340A (ja) * 1994-04-19 1995-10-31 Mitsubishi Cable Ind Ltd 発光素子およびその製造方法
JPH0832180A (ja) * 1994-07-11 1996-02-02 Sony Corp 半導体発光素子
JPH08330631A (ja) * 1995-03-24 1996-12-13 Sanyo Electric Co Ltd 半導体発光素子およびその製造方法
JPH08316525A (ja) * 1995-05-13 1996-11-29 Temic Telefunken Microelectron Gmbh 発光ダイオード
JPH08340131A (ja) * 1996-06-20 1996-12-24 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体素子
JPH10135519A (ja) * 1996-09-09 1998-05-22 Toshiba Corp 半導体発光素子およびその製造方法

Cited By (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000036619A (ja) * 1998-05-13 2000-02-02 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2001007398A (ja) * 1999-06-08 2001-01-12 Agilent Technol Inc ｐ型ＧａＮ層に透光性接触部を形成する方法
US6287947B1 (en) 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
JP2003524295A (ja) * 1999-12-01 2003-08-12 クリー・ライティング・カンパニー 改良された電流拡散構造を有するスケーラブルｌｅｄ
JP2013062543A (ja) * 1999-12-01 2013-04-04 Cree Inc 改良された電流拡散構造を有するスケーラブルｌｅｄ
JP2015043473A (ja) * 1999-12-01 2015-03-05 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 改良された電流拡散構造を有するスケーラブルｌｅｄ
US6730939B2 (en) 2000-02-15 2004-05-04 Osram Opto Semiconductors Gmbh Radiation emitting semiconductor device
US7205578B2 (en) 2000-02-15 2007-04-17 Osram Gmbh Semiconductor component which emits radiation, and method for producing the same
US7195942B2 (en) 2000-02-15 2007-03-27 Osram Gmbh Radiation emitting semiconductor device
WO2001061765A1 (de) * 2000-02-15 2001-08-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung
US6777805B2 (en) 2000-03-31 2004-08-17 Toyoda Gosei Co., Ltd. Group-III nitride compound semiconductor device
WO2001073858A1 (fr) * 2000-03-31 2001-10-04 Toyoda Gosei Co., Ltd. Dispositif a semi-conducteur de nitrure du groupe iii
US7042089B2 (en) 2000-03-31 2006-05-09 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
JP2003534667A (ja) * 2000-05-23 2003-11-18 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクスのための構成素子及びその製造方法
WO2001091194A1 (de) * 2000-05-23 2001-11-29 Osram Opto Semiconductors Gmbh Bauelement für die optoelektronik und verfahren zu dessen herstellung
JP2003046127A (ja) * 2001-05-23 2003-02-14 Sanyo Electric Co Ltd 窒化物系半導体発光素子
JP2003110139A (ja) * 2001-09-28 2003-04-11 Sanyo Electric Co Ltd 窒化物系半導体発光素子
DE10203809A1 (de) * 2002-01-31 2003-08-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
DE10203809B4 (de) * 2002-01-31 2010-05-27 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
US7242025B2 (en) 2002-01-31 2007-07-10 Osram Opto Semiconductors Gmbh Radiation emitting semiconductor component having a nitride compound semiconductor body and a contact metallization layer on its surface
US6835958B2 (en) 2002-02-06 2004-12-28 Toyoda Gosei Co., Ltd. Light-emitting device
JP2003179263A (ja) * 2002-11-11 2003-06-27 Seiwa Electric Mfg Co Ltd 窒化ガリウム系半導体発光素子
JP2005123501A (ja) * 2003-10-20 2005-05-12 Toyoda Gosei Co Ltd 半導体発光素子
JP2005197289A (ja) * 2003-12-26 2005-07-21 Nichia Chem Ind Ltd 窒化物半導体発光素子およびその製造方法
JP2006024913A (ja) * 2004-06-09 2006-01-26 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子用透光性正極および発光素子
JP2006156590A (ja) * 2004-11-26 2006-06-15 Mitsubishi Cable Ind Ltd 発光ダイオード
US7645689B2 (en) 2005-01-19 2010-01-12 Samsung Electro-Mechanics Co., Ltd. Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same
US8981420B2 (en) 2005-05-19 2015-03-17 Nichia Corporation Nitride semiconductor device
JP2007042850A (ja) * 2005-08-03 2007-02-15 Showa Denko Kk ｐｎ接合型化合物半導体発光ダイオード
JP2007287757A (ja) * 2006-04-12 2007-11-01 Rohm Co Ltd 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法
JP2007311506A (ja) * 2006-05-17 2007-11-29 Sanken Electric Co Ltd 過電圧保護素子を伴なった半導体発光装置
JP2008108905A (ja) * 2006-10-25 2008-05-08 Nichia Chem Ind Ltd 半導体発光素子
JP2009043934A (ja) * 2007-08-08 2009-02-26 Toyoda Gosei Co Ltd フリップチップ型発光素子
US8148736B2 (en) 2007-08-08 2012-04-03 Toyoda Gosei Co., Ltd. Flip chip type light-emitting element
KR101280400B1 (ko) * 2010-02-09 2013-07-01 에피스타 코포레이션 광전 소자 및 그 제조방법
JP2011171743A (ja) * 2010-02-18 2011-09-01 Lg Innotek Co Ltd 発光素子及び発光素子パッケージ
US9537056B2 (en) 2010-02-18 2017-01-03 Lg Innotek Co., Ltd. Light emitting device
GB2482110B (en) * 2010-07-05 2014-08-27 Cambridge Display Tech Ltd Lighting elements
GB2482110A (en) * 2010-07-05 2012-01-25 Cambridge Display Tech Ltd OLED lighting element with electrical busbar and tracks optimized to match current density of diode.
US8941143B2 (en) 2010-07-05 2015-01-27 Cambridge Display Technology Limited Lighting elements
JP2013535759A (ja) * 2010-07-05 2013-09-12 ケンブリッジ ディスプレイ テクノロジー リミテッド 照明素子
JP2012054525A (ja) * 2010-08-04 2012-03-15 Toshiba Corp 半導体発光素子
US8653498B2 (en) 2010-08-04 2014-02-18 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2012138465A (ja) * 2010-12-27 2012-07-19 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法およびｉｉｉ族窒化物半導体発光素子、ランプ、電子機器、機械装置
US8921887B2 (en) 2011-03-03 2014-12-30 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing the same
JP2012186196A (ja) * 2011-03-03 2012-09-27 Toshiba Corp 半導体発光素子及びその製造方法
US9437779B2 (en) 2011-03-03 2016-09-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing the same
US9331248B2 (en) 2011-03-03 2016-05-03 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing the same
US9159880B2 (en) 2011-03-03 2015-10-13 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing the same
JP2012186195A (ja) * 2011-03-03 2012-09-27 Toshiba Corp 半導体発光素子及びその製造方法
US9142728B2 (en) 2011-03-08 2015-09-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing the same
US8835954B2 (en) 2011-03-08 2014-09-16 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing the same
JP2012186427A (ja) * 2011-03-08 2012-09-27 Toshiba Corp 半導体発光素子及びその製造方法
JP2012033953A (ja) * 2011-10-07 2012-02-16 Stanley Electric Co Ltd 発光素子及びその製造方法
JP2012060188A (ja) * 2011-12-26 2012-03-22 Toshiba Corp 半導体発光素子
JP2014096460A (ja) * 2012-11-08 2014-05-22 Panasonic Corp 紫外半導体発光素子およびその製造方法
WO2014073139A1 (ja) * 2012-11-08 2014-05-15 パナソニック株式会社 紫外半導体発光素子およびその製造方法
JP2015061072A (ja) * 2013-09-17 2015-03-30 隆達電子股▲ふん▼有限公司 発光ダイオード
US11094869B2 (en) 2018-01-15 2021-08-17 Lg Chem, Ltd. Transparent light emitting device display
JP2019192731A (ja) * 2018-04-23 2019-10-31 旭化成株式会社 窒化物半導体装置、窒化物半導体装置の製造方法
JP2023037267A (ja) * 2021-09-03 2023-03-15 株式会社東芝 面発光型半導体発光装置

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