JPH10223929A - ＡｌＧａＩｎＰ発光素子用基板 - Google Patents

ＡｌＧａＩｎＰ発光素子用基板

Info

Publication number
JPH10223929A
JPH10223929A JP7798097A JP7798097A JPH10223929A JP H10223929 A JPH10223929 A JP H10223929A JP 7798097 A JP7798097 A JP 7798097A JP 7798097 A JP7798097 A JP 7798097A JP H10223929 A JPH10223929 A JP H10223929A
Authority
JP
Japan
Prior art keywords
layer
substrate
type
algainp
current diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7798097A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10223929A5 (enExample
Inventor
Shigetaka Murasato
茂隆 村里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to JP7798097A priority Critical patent/JPH10223929A/ja
Priority to US08/985,199 priority patent/US5981976A/en
Priority to GB9725892A priority patent/GB2320136A/en
Priority to TW086118368A priority patent/TW383509B/zh
Priority to DE19754042A priority patent/DE19754042A1/de
Publication of JPH10223929A publication Critical patent/JPH10223929A/ja
Publication of JPH10223929A5 publication Critical patent/JPH10223929A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors

Landscapes

  • Led Devices (AREA)
JP7798097A 1996-12-05 1997-03-28 ＡｌＧａＩｎＰ発光素子用基板 Pending JPH10223929A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP7798097A JPH10223929A (ja) 1996-12-05 1997-03-28 ＡｌＧａＩｎＰ発光素子用基板
US08/985,199 US5981976A (en) 1996-12-05 1997-12-04 Epitaxial wafer for AlGaInP light-emitting diode
GB9725892A GB2320136A (en) 1996-12-05 1997-12-05 Semiconductor light emitting devices
TW086118368A TW383509B (en) 1996-12-05 1997-12-05 Light-emitting diodes and epitaxial wafer applied to AlGaInP light-emitting diodes
DE19754042A DE19754042A1 (de) 1996-12-05 1997-12-05 Epitaxialwafer für lichtemittierende Diode aus AlGaInP und lichtemittierende Diode

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8-325644 1996-12-05
JP32564496 1996-12-05
JP7798097A JPH10223929A (ja) 1996-12-05 1997-03-28 ＡｌＧａＩｎＰ発光素子用基板

Publications (2)

Publication Number Publication Date
JPH10223929A true JPH10223929A (ja) 1998-08-21
JPH10223929A5 JPH10223929A5 (enExample) 2004-11-25

Family

ID=26419037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7798097A Pending JPH10223929A (ja) 1996-12-05 1997-03-28 ＡｌＧａＩｎＰ発光素子用基板

Country Status (5)

Country Link
US (1) US5981976A (enExample)
JP (1) JPH10223929A (enExample)
DE (1) DE19754042A1 (enExample)
GB (1) GB2320136A (enExample)
TW (1) TW383509B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004288729A (ja) * 2003-03-19 2004-10-14 Shin Etsu Handotai Co Ltd 発光素子及び発光素子の製造方法
US7488989B2 (en) 2003-06-10 2009-02-10 Kabushiki Kaisha Toshiba Semiconductor light emitting element, its manufacturing method and semiconductor light emitting device
JP2014027310A (ja) * 2013-11-01 2014-02-06 Toshiba Corp 発光素子
KR20230026643A (ko) * 2021-08-18 2023-02-27 한국과학기술원 효율 향상을 위한 측벽 패시베이션층을 갖는 마이크로 발광 다이오드 소자와 그의 제조 방법 및 그를 포함하는 디스플레이

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3881470B2 (ja) * 1999-01-05 2007-02-14 ローム株式会社 半導体発光素子の製法
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6429103B1 (en) * 2000-04-13 2002-08-06 Motorola, Inc. MOCVD-grown emode HIGFET buffer
EP1290733A1 (en) 2000-05-31 2003-03-12 Motorola, Inc. Semiconductor device and method for manufacturing the same
WO2002009187A2 (en) 2000-07-24 2002-01-31 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
WO2004032296A1 (ja) * 2002-09-20 2004-04-15 Sony Corporation 半導体レーザ装置及びその製造方法
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
DE102005047168A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP2008091789A (ja) * 2006-10-04 2008-04-17 Hitachi Cable Ltd 発光ダイオード
JP5801542B2 (ja) * 2010-07-13 2015-10-28 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
DE102010052727B4 (de) * 2010-11-26 2019-01-31 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und derartiger Halbleiterchip
RU2531551C2 (ru) * 2011-09-02 2014-10-20 Общество с ограниченной ответственностью "Интелсоб" (ООО "Интелсоб") Мультиэпитаксиальная структура кристалла двухинжекционного высоковольтного гипербыстровосстанавливающегося диода на основе галлия и мышьяка
CN103500781B (zh) * 2013-09-30 2016-08-10 山西飞虹微纳米光电科技有限公司 一种高效率的AlGaInP发光二极管外延片及其制备方法
TWI780167B (zh) * 2018-06-26 2022-10-11 晶元光電股份有限公司 半導體基底以及半導體元件
US10971650B2 (en) 2019-07-29 2021-04-06 Lextar Electronics Corporation Light emitting device
US11038088B2 (en) 2019-10-14 2021-06-15 Lextar Electronics Corporation Light emitting diode package
JP2021153082A (ja) * 2020-03-24 2021-09-30 キオクシア株式会社 半導体装置及び半導体記憶装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3290672B2 (ja) * 1990-08-20 2002-06-10 株式会社東芝 半導体発光ダイオード
US5153889A (en) * 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5008718A (en) * 1989-12-18 1991-04-16 Fletcher Robert M Light-emitting diode with an electrically conductive window
JPH06103759A (ja) * 1992-09-19 1994-04-15 Sanyo Electric Co Ltd 半導体メモリ
KR950010253A (ko) * 1993-09-07 1995-04-26 오가 노리오 반도체발광장치
JPH0794781A (ja) * 1993-09-24 1995-04-07 Toshiba Corp 面発光型半導体発光ダイオード
US5656829A (en) * 1994-08-30 1997-08-12 Showa Denko K.K. Semiconductor light emitting diode
US5811839A (en) * 1994-09-01 1998-09-22 Mitsubishi Chemical Corporation Semiconductor light-emitting devices
JP3122324B2 (ja) * 1995-02-20 2001-01-09 三菱電線工業株式会社 半導体発光素子

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004288729A (ja) * 2003-03-19 2004-10-14 Shin Etsu Handotai Co Ltd 発光素子及び発光素子の製造方法
US7488989B2 (en) 2003-06-10 2009-02-10 Kabushiki Kaisha Toshiba Semiconductor light emitting element, its manufacturing method and semiconductor light emitting device
JP2014027310A (ja) * 2013-11-01 2014-02-06 Toshiba Corp 発光素子
KR20230026643A (ko) * 2021-08-18 2023-02-27 한국과학기술원 효율 향상을 위한 측벽 패시베이션층을 갖는 마이크로 발광 다이오드 소자와 그의 제조 방법 및 그를 포함하는 디스플레이

Also Published As

Publication number Publication date
TW383509B (en) 2000-03-01
DE19754042A1 (de) 1998-06-10
GB2320136A (en) 1998-06-10
GB9725892D0 (en) 1998-02-04
US5981976A (en) 1999-11-09

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