DE19754042A1 - Epitaxialwafer für lichtemittierende Diode aus AlGaInP und lichtemittierende Diode - Google Patents
Epitaxialwafer für lichtemittierende Diode aus AlGaInP und lichtemittierende DiodeInfo
- Publication number
- DE19754042A1 DE19754042A1 DE19754042A DE19754042A DE19754042A1 DE 19754042 A1 DE19754042 A1 DE 19754042A1 DE 19754042 A DE19754042 A DE 19754042A DE 19754042 A DE19754042 A DE 19754042A DE 19754042 A1 DE19754042 A1 DE 19754042A1
- Authority
- DE
- Germany
- Prior art keywords
- light
- layer
- emitting
- current spreading
- algainp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000010410 layer Substances 0.000 claims description 203
- 238000003892 spreading Methods 0.000 claims description 61
- 230000007480 spreading Effects 0.000 claims description 61
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 50
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 35
- 239000011241 protective layer Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000007704 transition Effects 0.000 claims description 5
- 125000005842 heteroatom Chemical group 0.000 claims description 3
- 239000013078 crystal Substances 0.000 description 71
- 238000000034 method Methods 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 238000004943 liquid phase epitaxy Methods 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000004018 waxing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32564496 | 1996-12-05 | ||
| JP7798097A JPH10223929A (ja) | 1996-12-05 | 1997-03-28 | ＡｌＧａＩｎＰ発光素子用基板 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE19754042A1 true DE19754042A1 (de) | 1998-06-10 |
Family
ID=26419037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19754042A Ceased DE19754042A1 (de) | 1996-12-05 | 1997-12-05 | Epitaxialwafer für lichtemittierende Diode aus AlGaInP und lichtemittierende Diode |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5981976A (enExample) |
| JP (1) | JPH10223929A (enExample) |
| DE (1) | DE19754042A1 (enExample) |
| GB (1) | GB2320136A (enExample) |
| TW (1) | TW383509B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005047168A1 (de) * | 2005-09-30 | 2007-04-12 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| DE102010052727A1 (de) * | 2010-11-26 | 2012-05-31 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und derartiger Halbleiterchip |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3881470B2 (ja) * | 1999-01-05 | 2007-02-14 | ローム株式会社 | 半導体発光素子の製法 |
| US6392257B1 (en) | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
| US6429103B1 (en) * | 2000-04-13 | 2002-08-06 | Motorola, Inc. | MOCVD-grown emode HIGFET buffer |
| EP1290733A1 (en) | 2000-05-31 | 2003-03-12 | Motorola, Inc. | Semiconductor device and method for manufacturing the same |
| WO2002009187A2 (en) | 2000-07-24 | 2002-01-31 | Motorola, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
| US20020096683A1 (en) | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
| WO2002082551A1 (en) | 2001-04-02 | 2002-10-17 | Motorola, Inc. | A semiconductor structure exhibiting reduced leakage current |
| US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
| US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
| US20030034491A1 (en) | 2001-08-14 | 2003-02-20 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
| US20030071327A1 (en) | 2001-10-17 | 2003-04-17 | Motorola, Inc. | Method and apparatus utilizing monocrystalline insulator |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| WO2004032296A1 (ja) * | 2002-09-20 | 2004-04-15 | Sony Corporation | 半導体レーザ装置及びその製造方法 |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
| JP2004288729A (ja) * | 2003-03-19 | 2004-10-14 | Shin Etsu Handotai Co Ltd | 発光素子及び発光素子の製造方法 |
| JP3737494B2 (ja) | 2003-06-10 | 2006-01-18 | 株式会社東芝 | 半導体発光素子及びその製造方法並びに半導体発光装置 |
| JP2008091789A (ja) * | 2006-10-04 | 2008-04-17 | Hitachi Cable Ltd | 発光ダイオード |
| JP5801542B2 (ja) * | 2010-07-13 | 2015-10-28 | 昭和電工株式会社 | 発光ダイオード及び発光ダイオードランプ |
| RU2531551C2 (ru) * | 2011-09-02 | 2014-10-20 | Общество с ограниченной ответственностью "Интелсоб" (ООО "Интелсоб") | Мультиэпитаксиальная структура кристалла двухинжекционного высоковольтного гипербыстровосстанавливающегося диода на основе галлия и мышьяка |
| CN103500781B (zh) * | 2013-09-30 | 2016-08-10 | 山西飞虹微纳米光电科技有限公司 | 一种高效率的AlGaInP发光二极管外延片及其制备方法 |
| JP5715672B2 (ja) * | 2013-11-01 | 2015-05-13 | 株式会社東芝 | 発光素子 |
| TWI780167B (zh) * | 2018-06-26 | 2022-10-11 | 晶元光電股份有限公司 | 半導體基底以及半導體元件 |
| US10971650B2 (en) | 2019-07-29 | 2021-04-06 | Lextar Electronics Corporation | Light emitting device |
| US11038088B2 (en) | 2019-10-14 | 2021-06-15 | Lextar Electronics Corporation | Light emitting diode package |
| JP2021153082A (ja) * | 2020-03-24 | 2021-09-30 | キオクシア株式会社 | 半導体装置及び半導体記憶装置 |
| KR102666632B1 (ko) * | 2021-08-18 | 2024-05-20 | 한국과학기술원 | 효율 향상을 위한 측벽 패시베이션층을 갖는 마이크로 발광 다이오드 소자와 그의 제조 방법 및 그를 포함하는 디스플레이 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3290672B2 (ja) * | 1990-08-20 | 2002-06-10 | 株式会社東芝 | 半導体発光ダイオード |
| US5153889A (en) * | 1989-05-31 | 1992-10-06 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
| US5008718A (en) * | 1989-12-18 | 1991-04-16 | Fletcher Robert M | Light-emitting diode with an electrically conductive window |
| JPH06103759A (ja) * | 1992-09-19 | 1994-04-15 | Sanyo Electric Co Ltd | 半導体メモリ |
| KR950010253A (ko) * | 1993-09-07 | 1995-04-26 | 오가 노리오 | 반도체발광장치 |
| JPH0794781A (ja) * | 1993-09-24 | 1995-04-07 | Toshiba Corp | 面発光型半導体発光ダイオード |
| US5656829A (en) * | 1994-08-30 | 1997-08-12 | Showa Denko K.K. | Semiconductor light emitting diode |
| US5811839A (en) * | 1994-09-01 | 1998-09-22 | Mitsubishi Chemical Corporation | Semiconductor light-emitting devices |
| JP3122324B2 (ja) * | 1995-02-20 | 2001-01-09 | 三菱電線工業株式会社 | 半導体発光素子 |
-
1997
- 1997-03-28 JP JP7798097A patent/JPH10223929A/ja active Pending
- 1997-12-04 US US08/985,199 patent/US5981976A/en not_active Expired - Lifetime
- 1997-12-05 DE DE19754042A patent/DE19754042A1/de not_active Ceased
- 1997-12-05 GB GB9725892A patent/GB2320136A/en not_active Withdrawn
- 1997-12-05 TW TW086118368A patent/TW383509B/zh not_active IP Right Cessation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005047168A1 (de) * | 2005-09-30 | 2007-04-12 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| DE102010052727A1 (de) * | 2010-11-26 | 2012-05-31 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und derartiger Halbleiterchip |
| US9093604B2 (en) | 2010-11-26 | 2015-07-28 | Osram Opto Semiconductors Gmbh | Method of producing an optoelectronic semiconductor chip, and such a semiconductor chip |
| DE102010052727B4 (de) | 2010-11-26 | 2019-01-31 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und derartiger Halbleiterchip |
Also Published As
| Publication number | Publication date |
|---|---|
| TW383509B (en) | 2000-03-01 |
| GB2320136A (en) | 1998-06-10 |
| GB9725892D0 (en) | 1998-02-04 |
| US5981976A (en) | 1999-11-09 |
| JPH10223929A (ja) | 1998-08-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8131 | Rejection |