JPH10125928A - 半導体集積回路及びその作製方法 - Google Patents

半導体集積回路及びその作製方法

Info

Publication number
JPH10125928A
JPH10125928A JP8299755A JP29975596A JPH10125928A JP H10125928 A JPH10125928 A JP H10125928A JP 8299755 A JP8299755 A JP 8299755A JP 29975596 A JP29975596 A JP 29975596A JP H10125928 A JPH10125928 A JP H10125928A
Authority
JP
Japan
Prior art keywords
thin film
channel
region
film transistor
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8299755A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10125928A5 (enExample
Inventor
Kouyuu Chiyou
宏勇 張
Kenji Otsuka
憲司 大塚
Hideaki Kuwabara
秀明 桑原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP8299755A priority Critical patent/JPH10125928A/ja
Publication of JPH10125928A publication Critical patent/JPH10125928A/ja
Publication of JPH10125928A5 publication Critical patent/JPH10125928A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP8299755A 1996-10-23 1996-10-23 半導体集積回路及びその作製方法 Withdrawn JPH10125928A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8299755A JPH10125928A (ja) 1996-10-23 1996-10-23 半導体集積回路及びその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8299755A JPH10125928A (ja) 1996-10-23 1996-10-23 半導体集積回路及びその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006136995A Division JP4584187B2 (ja) 2006-05-16 2006-05-16 半導体集積回路の作製方法

Publications (2)

Publication Number Publication Date
JPH10125928A true JPH10125928A (ja) 1998-05-15
JPH10125928A5 JPH10125928A5 (enExample) 2005-04-28

Family

ID=17876594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8299755A Withdrawn JPH10125928A (ja) 1996-10-23 1996-10-23 半導体集積回路及びその作製方法

Country Status (1)

Country Link
JP (1) JPH10125928A (enExample)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001029898A1 (en) * 1999-10-21 2001-04-26 Matsushita Electric Industrial Co., Ltd. Thin-film transistor, method of manufacture thereof, and thin-film transistor lcd
JP2001189461A (ja) * 1999-10-21 2001-07-10 Matsushita Electric Ind Co Ltd 薄膜トランジスタ及びそれを用いた液晶表示装置
JP2001210832A (ja) * 1999-11-19 2001-08-03 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2001255560A (ja) * 2000-03-13 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2002175028A (ja) * 2000-07-31 2002-06-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2005229124A (ja) * 2000-07-31 2005-08-25 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US7026194B2 (en) 1999-09-17 2006-04-11 Semiconductor Energy Laboratory Co., Ltd. Method of forming thin film transistors having tapered gate electrode and curved insulating film
KR100675263B1 (ko) * 1999-07-22 2007-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제작방법
JP2007235161A (ja) * 2000-05-12 2007-09-13 Semiconductor Energy Lab Co Ltd 半導体装置
EP1049167A3 (en) * 1999-04-30 2007-10-24 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2008028399A (ja) * 2006-07-21 2008-02-07 Toppoly Optoelectronics Corp 画素と駆動領域の異なる電気特性を有する薄膜トランジスタデバイスを有するディスプレイ、およびその製造方法
US7511303B2 (en) 2000-07-31 2009-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
US7968890B2 (en) 1999-07-22 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2259292A3 (en) * 1998-11-17 2014-09-03 Semiconductor Energy Laboratory Co., Ltd. Electronic equipment having display device
JP2015005728A (ja) * 2013-06-21 2015-01-08 上海和輝光電有限公司Ｅｖｅｒｄｉｓｐｌａｙ Ｏｐｔｒｏｎｉｃｓ （Ｓｈａｎｇｈａｉ） Ｌｉｍｉｔｅｄ 薄膜トランジスタ
US8957424B2 (en) 1999-11-19 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Electroluminescence display device
CN104934373A (zh) * 2015-06-30 2015-09-23 厦门天马微电子有限公司 一种阵列基板及其制作方法

Cited By (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9627460B2 (en) 1998-11-17 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
US8957422B2 (en) 1998-11-17 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
EP2259292A3 (en) * 1998-11-17 2014-09-03 Semiconductor Energy Laboratory Co., Ltd. Electronic equipment having display device
EP1049167A3 (en) * 1999-04-30 2007-10-24 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7858987B2 (en) 1999-04-30 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7573069B2 (en) 1999-04-30 2009-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2009152615A (ja) * 1999-04-30 2009-07-09 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器
JP2011035418A (ja) * 1999-07-22 2011-02-17 Semiconductor Energy Lab Co Ltd 半導体装置
JP2011176332A (ja) * 1999-07-22 2011-09-08 Semiconductor Energy Lab Co Ltd 半導体装置
US20140117364A1 (en) * 1999-07-22 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Manufacturing Method Thereof
US8624248B2 (en) 1999-07-22 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2013179314A (ja) * 1999-07-22 2013-09-09 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2015179873A (ja) * 1999-07-22 2015-10-08 株式会社半導体エネルギー研究所 半導体装置
US7968890B2 (en) 1999-07-22 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016213481A (ja) * 1999-07-22 2016-12-15 株式会社半導体エネルギー研究所 半導体装置
US9576981B2 (en) 1999-07-22 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a gate insulting film with thick portions aligned with a tapered gate electrode
KR100675263B1 (ko) * 1999-07-22 2007-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제작방법
US7615825B2 (en) 1999-09-17 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having tapered gate insulating film
US7026194B2 (en) 1999-09-17 2006-04-11 Semiconductor Energy Laboratory Co., Ltd. Method of forming thin film transistors having tapered gate electrode and curved insulating film
US7294887B2 (en) 1999-09-17 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising thin film transistor
WO2001029898A1 (en) * 1999-10-21 2001-04-26 Matsushita Electric Industrial Co., Ltd. Thin-film transistor, method of manufacture thereof, and thin-film transistor lcd
JP2001189461A (ja) * 1999-10-21 2001-07-10 Matsushita Electric Ind Co Ltd 薄膜トランジスタ及びそれを用いた液晶表示装置
US6974972B1 (en) 1999-10-21 2005-12-13 Matsushita Electric Industrial Co., Ltd. Thin-film transistor, and liquid crystal display device using the same
CN1319177C (zh) * 1999-10-21 2007-05-30 松下电器产业株式会社 薄膜晶体管、其制造方法以及使用它的液晶装置和衬底
US9673223B2 (en) 1999-11-19 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Electroluminescence display device
JP2001210832A (ja) * 1999-11-19 2001-08-03 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US8957424B2 (en) 1999-11-19 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Electroluminescence display device
US7995183B2 (en) 2000-03-13 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
US8934066B2 (en) 2000-03-13 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having stick drivers and a method of manufacturing the same
JP2001255560A (ja) * 2000-03-13 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2007235161A (ja) * 2000-05-12 2007-09-13 Semiconductor Energy Lab Co Ltd 半導体装置
JP2005229124A (ja) * 2000-07-31 2005-08-25 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US8659025B2 (en) 2000-07-31 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
US8278160B2 (en) 2000-07-31 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8134157B2 (en) 2000-07-31 2012-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
JP2002175028A (ja) * 2000-07-31 2002-06-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US7800115B2 (en) 2000-07-31 2010-09-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
US7511303B2 (en) 2000-07-31 2009-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
KR101491567B1 (ko) * 2006-07-21 2015-02-10 티피오 디스플레이스 코포레이션 픽셀 및 구동영역에서 상이한 전기적 특성들을 갖는 박막트랜지스터 장치를 가지는 디스플레이 및 이를 제조하는방법
JP2008028399A (ja) * 2006-07-21 2008-02-07 Toppoly Optoelectronics Corp 画素と駆動領域の異なる電気特性を有する薄膜トランジスタデバイスを有するディスプレイ、およびその製造方法
JP2015005728A (ja) * 2013-06-21 2015-01-08 上海和輝光電有限公司Ｅｖｅｒｄｉｓｐｌａｙ Ｏｐｔｒｏｎｉｃｓ （Ｓｈａｎｇｈａｉ） Ｌｉｍｉｔｅｄ 薄膜トランジスタ
US9401376B2 (en) 2013-06-21 2016-07-26 Everdisplay Optronics (Shanghai) Limited Thin film transistor and active matrix organic light emitting diode assembly and method for manufacturing the same
CN104934373A (zh) * 2015-06-30 2015-09-23 厦门天马微电子有限公司 一种阵列基板及其制作方法

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