JPH09504640A - 平坦パネル・ディスプレイ・システムと構成部品とを製造する方法 - Google Patents
平坦パネル・ディスプレイ・システムと構成部品とを製造する方法Info
- Publication number
- JPH09504640A JPH09504640A JP7513287A JP51328795A JPH09504640A JP H09504640 A JPH09504640 A JP H09504640A JP 7513287 A JP7513287 A JP 7513287A JP 51328795 A JP51328795 A JP 51328795A JP H09504640 A JPH09504640 A JP H09504640A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- forming
- conductive
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30457—Diamond
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.基板の面の近傍に導電ラインを形成し、 当該導電ラインの選択された部分の近傍にアモルフィック・ダイヤモンド領域 を形成する ステップからなるディスプレイ・カソードを製作する方法。 2.導電ラインを形成する上記ステップが、 上記面の近傍に導電層を形成し、 上記導電層の近傍にフォトレジスト層を形成し、 上記導電ラインの境界を定義するマスクを形成するために、フォトレジストの 上記層を露光し現像し、 上記導電ラインを形成するために上記マスクを通して上記導電層をエッチング する サブステップからなる特許請求の範囲第1項記載の方法。 3.基板の面の近傍に導電材料の第1の層を形成し、 基板の領域によって隔てられた複数のカソード・ストリップを定義するために 、導電材料の第1の層をパターンづけしてエッチングし、 カソード.ストリップと基板の領域相互間との近傍に導電材料の第2の層を形 成し、 複数のスペーサを形成するための位置を定義する複数 の孔をもつ導電材料の第2の層の近傍に、マスクを形成し、 その孔の中に選択された材料を導入することによって、上記複数のスペーサを 形成し、 カソード・ストリップの領域の表面を露光するために、導電材料の第2の層の 部分を選択的に取り除き カソード・ストリップの領域の表面の選択された部分に、複数のアモルフィッ ク・ダイヤモンド・エミッタ領域を選択的に形成する ステップからなる、ダイオード・ディスプレイに用いるカソード板を製作する 方法。 4.基板の面の近傍に導電層を形成し、 基板のインタリーブされた領域によって隔てられた複数のカソード・ストリッ プを定義するために、導電層をパターンづけしてエッチングし、 カソード・ストリップの領域の選択された表面に、複数のアモルフィック・ダ イヤモンド・エミッタ領域を選択的に形成する ステップからなるカソード板を製作する方法。 5.アモルフィック・ダイヤモンドの領域を形成する上記ステップが、レーザ削 磨によってアモルフィック・ダイヤモンドの領域を形成するステップからなる、 特許請求の範囲第4項記載の方法。 6.基板の面に導電ストリップを形成し、 その導電ストリップの近傍に絶縁体層を形成し、 その絶縁体層の近傍に導電層を形成し、 その導電ストリップの部分を露光する複数の孔を形成するために、絶縁体層と 導電層とにパターンづけしてエッチングし、 その孔の夫々の側壁の部分を形成する絶縁体層の部分をアンダカットするため に、孔を通してエッチングするステップからなる、トライオード・ピクセル・デ ィスプレイ・カソードのピクセルを製作する方法。 7.アモルフィック・ダイヤモンドの領域を形成する上記ステップが、レーザ削 磨によってアモルフィック・ダイヤモンドの領域を形成するステップからなる、 特許請求の範囲第6項記載の方法。 8.基板の面で間隔をへだてられた複数の導電ストリップを形成し、 導電ストリップの近傍に絶縁体層を形成し、 絶縁体層の近傍に導電層を形成し、 導電ストリップの部分を露光する複数の孔を形成するために、その絶縁体層と その導電層とをパターンづけしてエッチングし、 孔の夫々の側壁の部分をつくる絶縁体層の部分をアンダカットするために、孔 を通してエッチングし、 導電ストリップの露光された部分でアモルフィック・ダイヤモンドの領域を形 成する ステップからなる、トライオード・ディスプレイ・カソード板を製作する方法 。 9.アモルフィック・ダイヤモンドの領域を形成する上記ステップが、レーザ削 磨によって、アモルフィック・ダイヤモンドの領域を形成するステップからなる 、特許請求の範囲第8項記載の方法。 10.基板の面の近傍に導電層を形成し、 基板のインタリーブされた領域間で隔てられた複数のカソード・ストリップを 定義するために、導電層をパターンづけしてエッチングし、 基板の上記インタリーブされた領域内に配置された複数のスペーサを形成し、 カソード・ストリップの選択された領域に、複数のアモルフィック・ダイヤモ ンド・エミッタ領域を選択的に形成する ステップからなる、カソード板を製作する方法。 11.基板の面の近傍に導電層を形成し、 基板のインタリーブされた領域によって隔てられた複数のカソード・ストリッ プを定義するために、導電層をパターンづけしてエッチングし、 カソード・ストリッフの部分の近傍に高抵抗材料の領域を選択的に形成し、 高抵抗材料の領域の選択された領域に、複数のアモルフィック・ダイヤモンド 領域を選択的に形成する ステップからなる、カソード板を製作する方法。 12.複数のアモルフィック・ダイヤモンド領域を形成する上記ステップが、ラ ンダム・モールファラジー(random morphology)を用いて、複数のアモルフィ ック・ダイヤモンド領域を形成するステップからなる、特許請求の範囲第11項 記載の方法。 13.基板の面の近傍に導電層を形成し、 基板のインタリーブされた領域によって隔てられ、それを通して基板の下方に 存在する領域を露光する複数の孔を含む、複数のカソード・ストリップを定義す るために、導電層をパターンづけしてエッチングし、 カソード・ストリップを通して孔の中に高抵抗材料の領域を選択的に形成し、 高抵抗材料の選択された領域に、複数のアモルフィック・ダイヤモンド・エミ ッタ領域を選択的に形成する ステップからなる、カソード板の製作方法。 14.高抵抗材料の領域の選択された領域内に複数のアモルフィック・ダイヤモ ンド・エミッタ領域を形成する 上記ステップは、ランダム・モールファラジー(random morphology)を用いて 、アモルフィック・ダイヤモンド領域を形成するステップからなる、特許請求の 範囲第13項記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14770093A | 1993-11-04 | 1993-11-04 | |
US08/147,700 | 1993-11-04 | ||
PCT/US1994/012311 WO1995012835A1 (en) | 1993-11-04 | 1994-10-26 | Methods for fabricating flat panel display systems and components |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09504640A true JPH09504640A (ja) | 1997-05-06 |
JP3726117B2 JP3726117B2 (ja) | 2005-12-14 |
Family
ID=22522575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51328795A Expired - Fee Related JP3726117B2 (ja) | 1993-11-04 | 1994-10-26 | 平坦パネル・ディスプレイ・システムと構成部品とを製造する方法 |
Country Status (9)
Country | Link |
---|---|
US (3) | US5652083A (ja) |
EP (1) | EP0727057A4 (ja) |
JP (1) | JP3726117B2 (ja) |
KR (1) | KR100366191B1 (ja) |
CN (1) | CN1134754A (ja) |
AU (1) | AU1043895A (ja) |
CA (1) | CA2172803A1 (ja) |
RU (1) | RU2141698C1 (ja) |
WO (1) | WO1995012835A1 (ja) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5675216A (en) | 1992-03-16 | 1997-10-07 | Microelectronics And Computer Technololgy Corp. | Amorphic diamond film flat field emission cathode |
US6097139A (en) * | 1995-08-04 | 2000-08-01 | Printable Field Emitters Limited | Field electron emission materials and devices |
US5762773A (en) * | 1996-01-19 | 1998-06-09 | Micron Display Technology, Inc. | Method and system for manufacture of field emission display |
US6117294A (en) * | 1996-01-19 | 2000-09-12 | Micron Technology, Inc. | Black matrix material and methods related thereto |
US6027619A (en) * | 1996-12-19 | 2000-02-22 | Micron Technology, Inc. | Fabrication of field emission array with filtered vacuum cathodic arc deposition |
US6103133A (en) * | 1997-03-19 | 2000-08-15 | Kabushiki Kaisha Toshiba | Manufacturing method of a diamond emitter vacuum micro device |
KR100609365B1 (ko) * | 1997-03-25 | 2006-08-09 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 디스플레이 패널용 필드 이미터 캐소드 배면판 구조물 |
US7112449B1 (en) * | 2000-04-05 | 2006-09-26 | Nanogram Corporation | Combinatorial chemical synthesis |
KR100216484B1 (ko) * | 1997-08-18 | 1999-08-16 | 손욱 | 3극관형 전계 방출 표시소자의 제조방법 |
US6208072B1 (en) * | 1997-08-28 | 2001-03-27 | Matsushita Electronics Corporation | Image display apparatus with focusing and deflecting electrodes |
JP3457162B2 (ja) | 1997-09-19 | 2003-10-14 | 松下電器産業株式会社 | 画像表示装置 |
JP2848383B1 (ja) * | 1997-11-26 | 1999-01-20 | 日本電気株式会社 | 有機el素子の製造方法 |
US6236381B1 (en) | 1997-12-01 | 2001-05-22 | Matsushita Electronics Corporation | Image display apparatus |
US6630782B1 (en) | 1997-12-01 | 2003-10-07 | Matsushita Electric Industrial Co., Ltd. | Image display apparatus having electrodes comprised of a frame and wires |
US6278235B1 (en) | 1997-12-22 | 2001-08-21 | Matsushita Electronics Corporation | Flat-type display apparatus with front case to which grid frame with extended electrodes fixed thereto is attached |
US6045711A (en) * | 1997-12-29 | 2000-04-04 | Industrial Technology Research Institute | Vacuum seal for field emission arrays |
US6897855B1 (en) * | 1998-02-17 | 2005-05-24 | Sarnoff Corporation | Tiled electronic display structure |
FR2775280B1 (fr) * | 1998-02-23 | 2000-04-14 | Saint Gobain Vitrage | Procede de gravure d'une couche conductrice |
US6120857A (en) * | 1998-05-18 | 2000-09-19 | The Regents Of The University Of California | Low work function surface layers produced by laser ablation using short-wavelength photons |
US6124670A (en) * | 1998-05-29 | 2000-09-26 | The Regents Of The University Of California | Gate-and emitter array on fiber electron field emission structure |
JP4240424B2 (ja) * | 1998-10-23 | 2009-03-18 | エルジー ディスプレイ カンパニー リミテッド | エッチング剤及びこれを用いた電子機器用基板の製造方法 |
WO2001039235A2 (en) * | 1999-09-17 | 2001-05-31 | Vanderbilt University | Thermodynamic energy conversion devices and methods using a diamond-based electron emitter |
US20060208621A1 (en) * | 1999-09-21 | 2006-09-21 | Amey Daniel I Jr | Field emitter cathode backplate structures for display panels |
US6590320B1 (en) | 2000-02-23 | 2003-07-08 | Copytale, Inc. | Thin-film planar edge-emitter field emission flat panel display |
RU2194329C2 (ru) * | 2000-02-25 | 2002-12-10 | ООО "Высокие технологии" | Способ получения адресуемого автоэмиссионного катода и дисплейной структуры на его основе |
US6441481B1 (en) * | 2000-04-10 | 2002-08-27 | Analog Devices, Inc. | Hermetically sealed microstructure package |
US6716077B1 (en) * | 2000-05-17 | 2004-04-06 | Micron Technology, Inc. | Method of forming flow-fill structures |
US6783589B2 (en) * | 2001-01-19 | 2004-08-31 | Chevron U.S.A. Inc. | Diamondoid-containing materials in microelectronics |
US6733355B2 (en) * | 2001-10-25 | 2004-05-11 | Samsung Sdi Co., Ltd. | Manufacturing method for triode field emission display |
GB2399219B (en) | 2002-01-30 | 2005-05-25 | Univ Johns Hopkins | Gating grid and method of making same |
US6806629B2 (en) | 2002-03-08 | 2004-10-19 | Chien-Min Sung | Amorphous diamond materials and associated methods for the use and manufacture thereof |
US20080029145A1 (en) * | 2002-03-08 | 2008-02-07 | Chien-Min Sung | Diamond-like carbon thermoelectric conversion devices and methods for the use and manufacture thereof |
US6949873B2 (en) * | 2002-03-08 | 2005-09-27 | Chien-Min Sung | Amorphous diamond materials and associated methods for the use and manufacture thereof |
US7235912B2 (en) * | 2002-03-08 | 2007-06-26 | Chien-Min Sung | Diamond-like carbon thermoelectric conversion devices and methods for the use and manufacture thereof |
US7358658B2 (en) * | 2002-03-08 | 2008-04-15 | Chien-Min Sung | Amorphous diamond materials and associated methods for the use and manufacture thereof |
US20070126312A1 (en) * | 2002-03-08 | 2007-06-07 | Chien-Min Sung | DLC field emission with nano-diamond impregnated metals |
US8220489B2 (en) | 2002-12-18 | 2012-07-17 | Vapor Technologies Inc. | Faucet with wear-resistant valve component |
US8555921B2 (en) | 2002-12-18 | 2013-10-15 | Vapor Technologies Inc. | Faucet component with coating |
US6904935B2 (en) * | 2002-12-18 | 2005-06-14 | Masco Corporation Of Indiana | Valve component with multiple surface layers |
US7866342B2 (en) * | 2002-12-18 | 2011-01-11 | Vapor Technologies, Inc. | Valve component for faucet |
US7866343B2 (en) * | 2002-12-18 | 2011-01-11 | Masco Corporation Of Indiana | Faucet |
CN100356495C (zh) * | 2003-06-30 | 2007-12-19 | 宋健民 | 无晶钻石材料的应用装置 |
US7312562B2 (en) * | 2004-02-04 | 2007-12-25 | Chevron U.S.A. Inc. | Heterodiamondoid-containing field emission devices |
WO2005112103A2 (en) * | 2004-05-07 | 2005-11-24 | Stillwater Scientific Instruments | Microfabricated miniature grids |
US20070026205A1 (en) * | 2005-08-01 | 2007-02-01 | Vapor Technologies Inc. | Article having patterned decorative coating |
KR20070017758A (ko) * | 2005-08-08 | 2007-02-13 | 삼성에스디아이 주식회사 | 전계방출 소자 및 그 제조방법 |
US7431628B2 (en) * | 2005-11-18 | 2008-10-07 | Samsung Sdi Co., Ltd. | Method of manufacturing flat panel display device, flat panel display device, and panel of flat panel display device |
TWI314334B (en) * | 2006-01-18 | 2009-09-01 | Ind Tech Res Inst | Field emission flat lamp and cathode plate thereof |
TW200827470A (en) * | 2006-12-18 | 2008-07-01 | Univ Nat Defense | Process for preparing a nano-carbon material field emission cathode plate |
CN101765801B (zh) | 2007-08-01 | 2011-04-20 | 夏普株式会社 | 液晶显示装置及其制造方法 |
US8260174B2 (en) | 2008-06-30 | 2012-09-04 | Xerox Corporation | Micro-tip array as a charging device including a system of interconnected air flow channels |
CN102203841B (zh) * | 2008-11-26 | 2014-01-22 | 夏普株式会社 | 显示装置 |
RU2446506C1 (ru) * | 2010-07-12 | 2012-03-27 | Борис Исаакович Горфинкель | Ячейка с автоэлектронной эмиссией и способ ее изготовления |
US8541792B2 (en) | 2010-10-15 | 2013-09-24 | Guardian Industries Corp. | Method of treating the surface of a soda lime silica glass substrate, surface-treated glass substrate, and device incorporating the same |
US10790403B1 (en) | 2013-03-14 | 2020-09-29 | nVizix LLC | Microfabricated vacuum photodiode arrays for solar power |
US9421738B2 (en) * | 2013-08-12 | 2016-08-23 | The United States Of America, As Represented By The Secretary Of The Navy | Chemically stable visible light photoemission electron source |
WO2016024878A1 (en) | 2014-08-13 | 2016-02-18 | Siemens Aktiengesellschaft | Device for the extraction of electrons in field emission systems and method to form the device |
Family Cites Families (230)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1954691A (en) * | 1930-09-27 | 1934-04-10 | Philips Nv | Process of making alpha layer containing alpha fluorescent material |
US2851408A (en) * | 1954-10-01 | 1958-09-09 | Westinghouse Electric Corp | Method of electrophoretic deposition of luminescent materials and product resulting therefrom |
US2959483A (en) * | 1955-09-06 | 1960-11-08 | Zenith Radio Corp | Color image reproducer and method of manufacture |
US2867541A (en) * | 1957-02-25 | 1959-01-06 | Gen Electric | Method of preparing transparent luminescent screens |
US3070441A (en) * | 1958-02-27 | 1962-12-25 | Rca Corp | Art of manufacturing cathode-ray tubes of the focus-mask variety |
US3108904A (en) * | 1960-08-30 | 1963-10-29 | Gen Electric | Method of preparing luminescent materials and luminescent screens prepared thereby |
NL285235A (ja) * | 1961-11-08 | |||
US3360450A (en) * | 1962-11-19 | 1967-12-26 | American Optical Corp | Method of making cathode ray tube face plates utilizing electrophoretic deposition |
US3314871A (en) * | 1962-12-20 | 1967-04-18 | Columbia Broadcasting Syst Inc | Method of cataphoretic deposition of luminescent materials |
US3525679A (en) * | 1964-05-05 | 1970-08-25 | Westinghouse Electric Corp | Method of electrodepositing luminescent material on insulating substrate |
US3554889A (en) * | 1968-11-22 | 1971-01-12 | Ibm | Color cathode ray tube screens |
US3675063A (en) * | 1970-01-02 | 1972-07-04 | Stanford Research Inst | High current continuous dynode electron multiplier |
US3789471A (en) * | 1970-02-06 | 1974-02-05 | Stanford Research Inst | Field emission cathode structures, devices utilizing such structures, and methods of producing such structures |
US3755704A (en) * | 1970-02-06 | 1973-08-28 | Stanford Research Inst | Field emission cathode structures and devices utilizing such structures |
US3665241A (en) * | 1970-07-13 | 1972-05-23 | Stanford Research Inst | Field ionizer and field emission cathode structures and methods of production |
US3812559A (en) * | 1970-07-13 | 1974-05-28 | Stanford Research Inst | Methods of producing field ionizer and field emission cathode structures |
NL7018154A (ja) * | 1970-12-12 | 1972-06-14 | ||
JPS4889678A (ja) * | 1972-02-25 | 1973-11-22 | ||
JPS5325632B2 (ja) * | 1973-03-22 | 1978-07-27 | ||
US3898146A (en) * | 1973-05-07 | 1975-08-05 | Gte Sylvania Inc | Process for fabricating a cathode ray tube screen structure |
US3947716A (en) * | 1973-08-27 | 1976-03-30 | The United States Of America As Represented By The Secretary Of The Army | Field emission tip and process for making same |
US3970887A (en) * | 1974-06-19 | 1976-07-20 | Micro-Bit Corporation | Micro-structure field emission electron source |
JPS5436828B2 (ja) * | 1974-08-16 | 1979-11-12 | ||
US4075535A (en) * | 1975-04-15 | 1978-02-21 | Battelle Memorial Institute | Flat cathodic tube display |
US4143292A (en) * | 1975-06-27 | 1979-03-06 | Hitachi, Ltd. | Field emission cathode of glassy carbon and method of preparation |
US4084942A (en) * | 1975-08-27 | 1978-04-18 | Villalobos Humberto Fernandez | Ultrasharp diamond edges and points and method of making |
US4164680A (en) * | 1975-08-27 | 1979-08-14 | Villalobos Humberto F | Polycrystalline diamond emitter |
US4168213A (en) * | 1976-04-29 | 1979-09-18 | U.S. Philips Corporation | Field emission device and method of forming same |
US4178531A (en) * | 1977-06-15 | 1979-12-11 | Rca Corporation | CRT with field-emission cathode |
US4141405A (en) * | 1977-07-27 | 1979-02-27 | Sri International | Method of fabricating a funnel-shaped miniature electrode for use as a field ionization source |
US4139773A (en) * | 1977-11-04 | 1979-02-13 | Oregon Graduate Center | Method and apparatus for producing bright high resolution ion beams |
SE411003B (sv) * | 1978-04-13 | 1979-11-19 | Soredal Sven Gunnar | Emitter for feltemission, samt sett att framstella emittern |
US4350926A (en) * | 1980-07-28 | 1982-09-21 | The United States Of America As Represented By The Secretary Of The Army | Hollow beam electron source |
US4307507A (en) * | 1980-09-10 | 1981-12-29 | The United States Of America As Represented By The Secretary Of The Navy | Method of manufacturing a field-emission cathode structure |
US4507562A (en) * | 1980-10-17 | 1985-03-26 | Jean Gasiot | Methods for rapidly stimulating luminescent phosphors and recovering information therefrom |
DE3103293A1 (de) * | 1981-01-31 | 1982-08-26 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Vakuumfluorezenzanzeigematrix und verfahren zu ihrem betrieb |
DE3235724A1 (de) * | 1981-10-02 | 1983-04-21 | Futaba Denshi Kogyo K.K., Mobara, Chiba | Leuchtstoff-anzeigevorrichtung |
US4728851A (en) * | 1982-01-08 | 1988-03-01 | Ford Motor Company | Field emitter device with gated memory |
US4578614A (en) * | 1982-07-23 | 1986-03-25 | The United States Of America As Represented By The Secretary Of The Navy | Ultra-fast field emitter array vacuum integrated circuit switching device |
JPS6010120B2 (ja) * | 1982-09-14 | 1985-03-15 | ソニー株式会社 | 粉体の非水溶液系電着法 |
US4498952A (en) * | 1982-09-17 | 1985-02-12 | Condesin, Inc. | Batch fabrication procedure for manufacture of arrays of field emitted electron beams with integral self-aligned optical lense in microguns |
US4663559A (en) * | 1982-09-17 | 1987-05-05 | Christensen Alton O | Field emission device |
US4513308A (en) * | 1982-09-23 | 1985-04-23 | The United States Of America As Represented By The Secretary Of The Navy | p-n Junction controlled field emitter array cathode |
DE3319526C2 (de) * | 1983-05-28 | 1994-10-20 | Max Planck Gesellschaft | Anordnung mit einem physikalischen Sensor |
FR2547828B1 (fr) * | 1983-06-23 | 1985-11-22 | Centre Nat Rech Scient | Materiau luminescent comportant une matrice solide a l'interieur de laquelle est reparti un compose fluorescent, son procede de preparation et son utilisation dans une photopile |
CA1266297A (en) * | 1983-07-30 | 1990-02-27 | Hideaki Nakagawa | Luminescent display cell |
JPS6038490A (ja) * | 1983-08-11 | 1985-02-28 | Toshiba Corp | 白色発光混合螢光体及びこれを用いた陰極線管 |
JPS6074231A (ja) * | 1983-09-30 | 1985-04-26 | Hitachi Ltd | 陰極線管の製造方法 |
US4594527A (en) * | 1983-10-06 | 1986-06-10 | Xerox Corporation | Vacuum fluorescent lamp having a flat geometry |
US4816717A (en) * | 1984-02-06 | 1989-03-28 | Rogers Corporation | Electroluminescent lamp having a polymer phosphor layer formed in substantially a non-crossed linked state |
FR2561019B1 (fr) * | 1984-03-09 | 1987-07-17 | Etude Surfaces Lab | Procede de realisation d'ecrans de visualisation plats et ecrans plats obtenus par la mise en oeuvre dudit procede |
JPS60207229A (ja) * | 1984-03-30 | 1985-10-18 | Toshiba Corp | 陰極線管螢光面の形成方法 |
JPS6110827A (ja) * | 1984-06-27 | 1986-01-18 | Matsushita Electronics Corp | 陰極線管螢光体膜の形成方法 |
FR2568394B1 (fr) * | 1984-07-27 | 1988-02-12 | Commissariat Energie Atomique | Dispositif de visualisation par cathodoluminescence excitee par emission de champ |
US4633131A (en) * | 1984-12-12 | 1986-12-30 | North American Philips Corporation | Halo-reducing faceplate arrangement |
JPS61269832A (ja) * | 1984-12-13 | 1986-11-29 | Nec Corp | 蛍光表示管 |
JPS61142645A (ja) * | 1984-12-17 | 1986-06-30 | Hitachi Ltd | 正,負兼用イオン源 |
US4684353A (en) * | 1985-08-19 | 1987-08-04 | Dunmore Corporation | Flexible electroluminescent film laminate |
JPS6247050U (ja) * | 1985-09-10 | 1987-03-23 | ||
US5124558A (en) | 1985-10-10 | 1992-06-23 | Quantex Corporation | Imaging system for mamography employing electron trapping materials |
US5166456A (en) | 1985-12-16 | 1992-11-24 | Kasei Optonix, Ltd. | Luminescent phosphor composition |
FR2593953B1 (fr) * | 1986-01-24 | 1988-04-29 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ |
US4684540A (en) * | 1986-01-31 | 1987-08-04 | Gte Products Corporation | Coated pigmented phosphors and process for producing same |
US5015912A (en) * | 1986-07-30 | 1991-05-14 | Sri International | Matrix-addressed flat panel display |
US4857799A (en) * | 1986-07-30 | 1989-08-15 | Sri International | Matrix-addressed flat panel display |
GB8621600D0 (en) * | 1986-09-08 | 1987-03-18 | Gen Electric Co Plc | Vacuum devices |
US4685996A (en) * | 1986-10-14 | 1987-08-11 | Busta Heinz H | Method of making micromachined refractory metal field emitters |
FR2607623B1 (fr) * | 1986-11-27 | 1995-02-17 | Commissariat Energie Atomique | Source d'electrons polarises de spin, utilisant une cathode emissive a micropointes, application en physique des interactions electrons-matiere ou electrons-particules, physique des plasmas, microscopie electronique |
US4900584A (en) * | 1987-01-12 | 1990-02-13 | Planar Systems, Inc. | Rapid thermal annealing of TFEL panels |
US4851254A (en) * | 1987-01-13 | 1989-07-25 | Nippon Soken, Inc. | Method and device for forming diamond film |
US4721885A (en) * | 1987-02-11 | 1988-01-26 | Sri International | Very high speed integrated microelectronic tubes |
US4822466A (en) * | 1987-06-25 | 1989-04-18 | University Of Houston - University Park | Chemically bonded diamond films and method for producing same |
DE3853744T2 (de) | 1987-07-15 | 1996-01-25 | Canon Kk | Elektronenemittierende Vorrichtung. |
US4818914A (en) * | 1987-07-17 | 1989-04-04 | Sri International | High efficiency lamp |
JPH063715B2 (ja) * | 1987-10-02 | 1994-01-12 | 双葉電子工業株式会社 | 蛍光表示管 |
US4855636A (en) * | 1987-10-08 | 1989-08-08 | Busta Heinz H | Micromachined cold cathode vacuum tube device and method of making |
US4780684A (en) * | 1987-10-22 | 1988-10-25 | Hughes Aircraft Company | Microwave integrated distributed amplifier with field emission triodes |
FR2623013A1 (fr) * | 1987-11-06 | 1989-05-12 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source |
JPH0693164B2 (ja) * | 1987-12-01 | 1994-11-16 | 双葉電子工業株式会社 | 表示装置 |
US5153901A (en) | 1988-01-06 | 1992-10-06 | Jupiter Toy Company | Production and manipulation of charged particles |
US5123039A (en) | 1988-01-06 | 1992-06-16 | Jupiter Toy Company | Energy conversion using high charge density |
US5148461A (en) | 1988-01-06 | 1992-09-15 | Jupiter Toy Co. | Circuits responsive to and controlling charged particles |
DE3817897A1 (de) * | 1988-01-06 | 1989-07-20 | Jupiter Toy Co | Die erzeugung und handhabung von ladungsgebilden hoher ladungsdichte |
US5054046A (en) * | 1988-01-06 | 1991-10-01 | Jupiter Toy Company | Method of and apparatus for production and manipulation of high density charge |
US5089812A (en) | 1988-02-26 | 1992-02-18 | Casio Computer Co., Ltd. | Liquid-crystal display |
JPH02503728A (ja) * | 1988-03-25 | 1990-11-01 | トムソン‐セーエスエフ | 電界放出形ソースの製造方法及びエミッタアレイの製造へのその応用 |
US5098737A (en) * | 1988-04-18 | 1992-03-24 | Board Of Regents The University Of Texas System | Amorphic diamond material produced by laser plasma deposition |
US4987007A (en) * | 1988-04-18 | 1991-01-22 | Board Of Regents, The University Of Texas System | Method and apparatus for producing a layer of material from a laser ion source |
US4874981A (en) * | 1988-05-10 | 1989-10-17 | Sri International | Automatically focusing field emission electrode |
US5285129A (en) | 1988-05-31 | 1994-02-08 | Canon Kabushiki Kaisha | Segmented electron emission device |
US4926056A (en) * | 1988-06-10 | 1990-05-15 | Sri International | Microelectronic field ionizer and method of fabricating the same |
US5063327A (en) * | 1988-07-06 | 1991-11-05 | Coloray Display Corporation | Field emission cathode based flat panel display having polyimide spacers |
US4923421A (en) * | 1988-07-06 | 1990-05-08 | Innovative Display Development Partners | Method for providing polyimide spacers in a field emission panel display |
US5185178A (en) | 1988-08-29 | 1993-02-09 | Minnesota Mining And Manufacturing Company | Method of forming an array of densely packed discrete metal microspheres |
US5043715A (en) * | 1988-12-07 | 1991-08-27 | Westinghouse Electric Corp. | Thin film electroluminescent edge emitter structure with optical lens and multi-color light emission systems |
US4882659A (en) * | 1988-12-21 | 1989-11-21 | Delco Electronics Corporation | Vacuum fluorescent display having integral backlit graphic patterns |
US4892757A (en) * | 1988-12-22 | 1990-01-09 | Gte Products Corporation | Method for a producing manganese activated zinc silicate phosphor |
US4956202A (en) * | 1988-12-22 | 1990-09-11 | Gte Products Corporation | Firing and milling method for producing a manganese activated zinc silicate phosphor |
EP0377320B1 (en) | 1988-12-27 | 1997-07-30 | Canon Kabushiki Kaisha | Electric field light-emitting device |
JP2548352B2 (ja) | 1989-01-17 | 1996-10-30 | 松下電器産業株式会社 | 発光素子およびその製造方法 |
US4994205A (en) * | 1989-02-03 | 1991-02-19 | Eastman Kodak Company | Composition containing a hafnia phosphor of enhanced luminescence |
US5142390A (en) | 1989-02-23 | 1992-08-25 | Ricoh Company, Ltd. | MIM element with a doped hard carbon film |
US5101288A (en) | 1989-04-06 | 1992-03-31 | Ricoh Company, Ltd. | LCD having obliquely split or interdigitated pixels connected to MIM elements having a diamond-like insulator |
US5153753A (en) | 1989-04-12 | 1992-10-06 | Ricoh Company, Ltd. | Active matrix-type liquid crystal display containing a horizontal MIM device with inter-digital conductors |
JP2799875B2 (ja) | 1989-05-20 | 1998-09-21 | 株式会社リコー | 液晶表示装置 |
US4990766A (en) * | 1989-05-22 | 1991-02-05 | Murasa International | Solid state electron amplifier |
JP2757207B2 (ja) | 1989-05-24 | 1998-05-25 | 株式会社リコー | 液晶表示装置 |
US4990416A (en) * | 1989-06-19 | 1991-02-05 | Coloray Display Corporation | Deposition of cathodoluminescent materials by reversal toning |
US5101137A (en) | 1989-07-10 | 1992-03-31 | Westinghouse Electric Corp. | Integrated tfel flat panel face and edge emitter structure producing multiple light sources |
US4956574A (en) * | 1989-08-08 | 1990-09-11 | Motorola, Inc. | Switched anode field emission device |
US4943343A (en) * | 1989-08-14 | 1990-07-24 | Zaher Bardai | Self-aligned gate process for fabricating field emitter arrays |
KR910008017B1 (ko) | 1989-08-30 | 1991-10-05 | 삼성전관 주식회사 | 칼라음극선관용 패널 세정방법 |
EP0420188A1 (en) | 1989-09-27 | 1991-04-03 | Sumitomo Electric Industries, Ltd. | Semiconductor heterojunction structure |
US5019003A (en) * | 1989-09-29 | 1991-05-28 | Motorola, Inc. | Field emission device having preformed emitters |
US5055077A (en) * | 1989-11-22 | 1991-10-08 | Motorola, Inc. | Cold cathode field emission device having an electrode in an encapsulating layer |
US5214416A (en) | 1989-12-01 | 1993-05-25 | Ricoh Company, Ltd. | Active matrix board |
US5412285A (en) | 1990-12-06 | 1995-05-02 | Seiko Epson Corporation | Linear amplifier incorporating a field emission device having specific gap distances between gate and cathode |
US5228878A (en) | 1989-12-18 | 1993-07-20 | Seiko Epson Corporation | Field electron emission device production method |
US5229682A (en) | 1989-12-18 | 1993-07-20 | Seiko Epson Corporation | Field electron emission device |
DE69026353T2 (de) | 1989-12-19 | 1996-11-14 | Matsushita Electric Ind Co Ltd | Feldemissionsvorrichtung und Verfahren zur Herstellung derselben |
US5038070A (en) * | 1989-12-26 | 1991-08-06 | Hughes Aircraft Company | Field emitter structure and fabrication process |
US5064396A (en) * | 1990-01-29 | 1991-11-12 | Coloray Display Corporation | Method of manufacturing an electric field producing structure including a field emission cathode |
US5235244A (en) | 1990-01-29 | 1993-08-10 | Innovative Display Development Partners | Automatically collimating electron beam producing arrangement |
US4964946A (en) * | 1990-02-02 | 1990-10-23 | The United States Of America As Represented By The Secretary Of The Navy | Process for fabricating self-aligned field emitter arrays |
US5079476A (en) | 1990-02-09 | 1992-01-07 | Motorola, Inc. | Encapsulated field emission device |
US5142184B1 (en) | 1990-02-09 | 1995-11-21 | Motorola Inc | Cold cathode field emission device with integral emitter ballasting |
US5007873A (en) * | 1990-02-09 | 1991-04-16 | Motorola, Inc. | Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process |
US5214346A (en) | 1990-02-22 | 1993-05-25 | Seiko Epson Corporation | Microelectronic vacuum field emission device |
US5192240A (en) | 1990-02-22 | 1993-03-09 | Seiko Epson Corporation | Method of manufacturing a microelectronic vacuum device |
JP2720607B2 (ja) | 1990-03-02 | 1998-03-04 | 株式会社日立製作所 | 表示装置、階調表示方法及び駆動回路 |
JP2820491B2 (ja) | 1990-03-30 | 1998-11-05 | 松下電子工業株式会社 | 気体放電型表示装置 |
US5126287A (en) | 1990-06-07 | 1992-06-30 | Mcnc | Self-aligned electron emitter fabrication method and devices formed thereby |
US5266155A (en) | 1990-06-08 | 1993-11-30 | The United States Of America As Represented By The Secretary Of The Navy | Method for making a symmetrical layered thin film edge field-emitter-array |
US5214347A (en) | 1990-06-08 | 1993-05-25 | The United States Of America As Represented By The Secretary Of The Navy | Layered thin-edged field-emitter device |
FR2663462B1 (fr) | 1990-06-13 | 1992-09-11 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes. |
US5156770A (en) | 1990-06-26 | 1992-10-20 | Thomson Consumer Electronics, Inc. | Conductive contact patch for a CRT faceplate panel |
US5231606A (en) | 1990-07-02 | 1993-07-27 | The United States Of America As Represented By The Secretary Of The Navy | Field emitter array memory device |
US5202571A (en) | 1990-07-06 | 1993-04-13 | Canon Kabushiki Kaisha | Electron emitting device with diamond |
US5201992A (en) | 1990-07-12 | 1993-04-13 | Bell Communications Research, Inc. | Method for making tapered microminiature silicon structures |
US5204581A (en) | 1990-07-12 | 1993-04-20 | Bell Communications Research, Inc. | Device including a tapered microminiature silicon structure |
US5075591A (en) * | 1990-07-13 | 1991-12-24 | Coloray Display Corporation | Matrix addressing arrangement for a flat panel display with field emission cathodes |
US5063323A (en) * | 1990-07-16 | 1991-11-05 | Hughes Aircraft Company | Field emitter structure providing passageways for venting of outgassed materials from active electronic area |
US5203731A (en) | 1990-07-18 | 1993-04-20 | International Business Machines Corporation | Process and structure of an integrated vacuum microelectronic device |
US5141459A (en) | 1990-07-18 | 1992-08-25 | International Business Machines Corporation | Structures and processes for fabricating field emission cathodes |
US5089292A (en) | 1990-07-20 | 1992-02-18 | Coloray Display Corporation | Field emission cathode array coated with electron work function reducing material, and method |
US5276521A (en) | 1990-07-30 | 1994-01-04 | Olympus Optical Co., Ltd. | Solid state imaging device having a constant pixel integrating period and blooming resistance |
US5148078A (en) | 1990-08-29 | 1992-09-15 | Motorola, Inc. | Field emission device employing a concentric post |
US5103145A (en) | 1990-09-05 | 1992-04-07 | Raytheon Company | Luminance control for cathode-ray tube having field emission cathode |
US5157309A (en) | 1990-09-13 | 1992-10-20 | Motorola Inc. | Cold-cathode field emission device employing a current source means |
US5136764A (en) | 1990-09-27 | 1992-08-11 | Motorola, Inc. | Method for forming a field emission device |
US5150192A (en) | 1990-09-27 | 1992-09-22 | The United States Of America As Represented By The Secretary Of The Navy | Field emitter array |
US5057047A (en) * | 1990-09-27 | 1991-10-15 | The United States Of America As Represented By The Secretary Of The Navy | Low capacitance field emitter array and method of manufacture therefor |
US5089742A (en) | 1990-09-28 | 1992-02-18 | The United States Of America As Represented By The Secretary Of The Navy | Electron beam source formed with biologically derived tubule materials |
US5103144A (en) | 1990-10-01 | 1992-04-07 | Raytheon Company | Brightness control for flat panel display |
US5075596A (en) | 1990-10-02 | 1991-12-24 | United Technologies Corporation | Electroluminescent display brightness compensation |
US5183529A (en) | 1990-10-29 | 1993-02-02 | Ford Motor Company | Fabrication of polycrystalline free-standing diamond films |
US5281890A (en) | 1990-10-30 | 1994-01-25 | Motorola, Inc. | Field emission device having a central anode |
US5173635A (en) | 1990-11-30 | 1992-12-22 | Motorola, Inc. | Bi-directional field emission device |
US5173634A (en) | 1990-11-30 | 1992-12-22 | Motorola, Inc. | Current regulated field-emission device |
US5157304A (en) | 1990-12-17 | 1992-10-20 | Motorola, Inc. | Field emission device display with vacuum seal |
US5132585A (en) | 1990-12-21 | 1992-07-21 | Motorola, Inc. | Projection display faceplate employing an optically transmissive diamond coating of high thermal conductivity |
EP0729171B1 (en) | 1990-12-28 | 2000-08-23 | Sony Corporation | A method of manufacturing a flat panel display apparatus |
US5209687A (en) | 1990-12-28 | 1993-05-11 | Sony Corporation | Flat panel display apparatus and a method of manufacturing thereof |
US5075595A (en) | 1991-01-24 | 1991-12-24 | Motorola, Inc. | Field emission device with vertically integrated active control |
US5212426A (en) | 1991-01-24 | 1993-05-18 | Motorola, Inc. | Integrally controlled field emission flat display device |
GB9101723D0 (en) | 1991-01-25 | 1991-03-06 | Marconi Gec Ltd | Field emission devices |
JP2626276B2 (ja) | 1991-02-06 | 1997-07-02 | 双葉電子工業株式会社 | 電子放出素子 |
US5312514A (en) | 1991-11-07 | 1994-05-17 | Microelectronics And Computer Technology Corporation | Method of making a field emitter device using randomly located nuclei as an etch mask |
US5281891A (en) | 1991-02-22 | 1994-01-25 | Matsushita Electric Industrial Co., Ltd. | Electron emission element |
US5347201A (en) | 1991-02-25 | 1994-09-13 | Panocorp Display Systems | Display device |
US5140219A (en) | 1991-02-28 | 1992-08-18 | Motorola, Inc. | Field emission display device employing an integral planar field emission control device |
GB2254486B (en) | 1991-03-06 | 1995-01-18 | Sony Corp | Flat image-display apparatus |
US5142256A (en) | 1991-04-04 | 1992-08-25 | Motorola, Inc. | Pin diode with field emission device switch |
US5220725A (en) | 1991-04-09 | 1993-06-22 | Northeastern University | Micro-emitter-based low-contact-force interconnection device |
FR2675947A1 (fr) | 1991-04-23 | 1992-10-30 | France Telecom | Procede de passivation locale d'un substrat par une couche de carbone amorphe hydrogene et procede de fabrication de transistors en couches minces sur ce substrat passive. |
US5144191A (en) | 1991-06-12 | 1992-09-01 | Mcnc | Horizontal microelectronic field emission devices |
US5233263A (en) | 1991-06-27 | 1993-08-03 | International Business Machines Corporation | Lateral field emission devices |
US5288877A (en) | 1991-07-03 | 1994-02-22 | Ppg Industries, Inc. | Continuous process for preparing indolenine compounds |
US5155420A (en) | 1991-08-05 | 1992-10-13 | Smith Robert T | Switching circuits employing field emission devices |
US5227699A (en) | 1991-08-16 | 1993-07-13 | Amoco Corporation | Recessed gate field emission |
US5138237A (en) * | 1991-08-20 | 1992-08-11 | Motorola, Inc. | Field emission electron device employing a modulatable diamond semiconductor emitter |
US5129850A (en) | 1991-08-20 | 1992-07-14 | Motorola, Inc. | Method of making a molded field emission electron emitter employing a diamond coating |
US5141460A (en) * | 1991-08-20 | 1992-08-25 | Jaskie James E | Method of making a field emission electron source employing a diamond coating |
US5262698A (en) | 1991-10-31 | 1993-11-16 | Raytheon Company | Compensation for field emission display irregularities |
US5199918A (en) | 1991-11-07 | 1993-04-06 | Microelectronics And Computer Technology Corporation | Method of forming field emitter device with diamond emission tips |
US5399238A (en) | 1991-11-07 | 1995-03-21 | Microelectronics And Computer Technology Corporation | Method of making field emission tips using physical vapor deposition of random nuclei as etch mask |
US5191217A (en) | 1991-11-25 | 1993-03-02 | Motorola, Inc. | Method and apparatus for field emission device electrostatic electron beam focussing |
US5124072A (en) | 1991-12-02 | 1992-06-23 | General Electric Company | Alkaline earth hafnate phosphor with cerium luminescence |
US5199917A (en) | 1991-12-09 | 1993-04-06 | Cornell Research Foundation, Inc. | Silicon tip field emission cathode arrays and fabrication thereof |
DE69214780T2 (de) | 1991-12-11 | 1997-05-15 | Agfa Gevaert Nv | Methode zur Herstellung eines radiographischen Schirmes |
US5204021A (en) | 1992-01-03 | 1993-04-20 | General Electric Company | Lanthanide oxide fluoride phosphor having cerium luminescence |
US5180951A (en) * | 1992-02-05 | 1993-01-19 | Motorola, Inc. | Electron device electron source including a polycrystalline diamond |
US5252833A (en) | 1992-02-05 | 1993-10-12 | Motorola, Inc. | Electron source for depletion mode electron emission apparatus |
US5173697A (en) | 1992-02-05 | 1992-12-22 | Motorola, Inc. | Digital-to-analog signal conversion device employing scaled field emission devices |
US5213712A (en) | 1992-02-10 | 1993-05-25 | General Electric Company | Lanthanum lutetium oxide phosphor with cerium luminescence |
US5229331A (en) | 1992-02-14 | 1993-07-20 | Micron Technology, Inc. | Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology |
US5151061A (en) | 1992-02-21 | 1992-09-29 | Micron Technology, Inc. | Method to form self-aligned tips for flat panel displays |
US5186670A (en) | 1992-03-02 | 1993-02-16 | Micron Technology, Inc. | Method to form self-aligned gate structures and focus rings |
US5259799A (en) | 1992-03-02 | 1993-11-09 | Micron Technology, Inc. | Method to form self-aligned gate structures and focus rings |
US5205770A (en) | 1992-03-12 | 1993-04-27 | Micron Technology, Inc. | Method to form high aspect ratio supports (spacers) for field emission display using micro-saw technology |
JP2661457B2 (ja) | 1992-03-31 | 1997-10-08 | 双葉電子工業株式会社 | 電界放出形カソード |
US5315393A (en) | 1992-04-01 | 1994-05-24 | Amoco Corporation | Robust pixel array scanning with image signal isolation |
US5410218A (en) | 1993-06-15 | 1995-04-25 | Micron Display Technology, Inc. | Active matrix field emission display having peripheral regulation of tip current |
US5357172A (en) | 1992-04-07 | 1994-10-18 | Micron Technology, Inc. | Current-regulated field emission cathodes for use in a flat panel display in which low-voltage row and column address signals control a much higher pixel activation voltage |
US5232549A (en) | 1992-04-14 | 1993-08-03 | Micron Technology, Inc. | Spacers for field emission display fabricated via self-aligned high energy ablation |
KR950004516B1 (ko) | 1992-04-29 | 1995-05-01 | 삼성전관주식회사 | 필드 에미션 디스플레이와 그 제조방법 |
US5256888A (en) | 1992-05-04 | 1993-10-26 | Motorola, Inc. | Transistor device apparatus employing free-space electron emission from a diamond material surface |
US5329207A (en) | 1992-05-13 | 1994-07-12 | Micron Technology, Inc. | Field emission structures produced on macro-grain polysilicon substrates |
KR0129678B1 (en) | 1992-05-22 | 1998-04-06 | Futaba Denshi Kogyo Kk | Fluorescent display device |
US5283500A (en) | 1992-05-28 | 1994-02-01 | At&T Bell Laboratories | Flat panel field emission display apparatus |
US5278475A (en) | 1992-06-01 | 1994-01-11 | Motorola, Inc. | Cathodoluminescent display apparatus and method for realization using diamond crystallites |
US5300862A (en) | 1992-06-11 | 1994-04-05 | Motorola, Inc. | Row activating method for fed cathodoluminescent display assembly |
US5242620A (en) | 1992-07-02 | 1993-09-07 | General Electric Company | Gadolinium lutetium aluminate phosphor with cerium luminescence |
US5330879A (en) | 1992-07-16 | 1994-07-19 | Micron Technology, Inc. | Method for fabrication of close-tolerance lines and sharp emission tips on a semiconductor wafer |
US5312777A (en) | 1992-09-25 | 1994-05-17 | International Business Machines Corporation | Fabrication methods for bidirectional field emission devices and storage structures |
US5236545A (en) | 1992-10-05 | 1993-08-17 | The Board Of Governors Of Wayne State University | Method for heteroepitaxial diamond film development |
US5347292A (en) | 1992-10-28 | 1994-09-13 | Panocorp Display Systems | Super high resolution cold cathode fluorescent display |
WO1994015352A1 (en) * | 1992-12-23 | 1994-07-07 | Microelectronics And Computer Technology Corporation | Triode structure flat panel display employing flat field emission cathodes |
KR960009127B1 (en) | 1993-01-06 | 1996-07-13 | Samsung Display Devices Co Ltd | Silicon field emission emitter and the manufacturing method |
US5619092A (en) * | 1993-02-01 | 1997-04-08 | Motorola | Enhanced electron emitter |
AU5897594A (en) * | 1993-06-02 | 1994-12-20 | Microelectronics And Computer Technology Corporation | Amorphic diamond film flat field emission cathode |
US5368681A (en) | 1993-06-09 | 1994-11-29 | Hong Kong University Of Science | Method for the deposition of diamond on a substrate |
US5380546A (en) | 1993-06-09 | 1995-01-10 | Microelectronics And Computer Technology Corporation | Multilevel metallization process for electronic components |
US5387844A (en) | 1993-06-15 | 1995-02-07 | Micron Display Technology, Inc. | Flat panel display drive circuit with switched drive current |
US5396150A (en) | 1993-07-01 | 1995-03-07 | Industrial Technology Research Institute | Single tip redundancy method and resulting flat panel display |
US5302423A (en) | 1993-07-09 | 1994-04-12 | Minnesota Mining And Manufacturing Company | Method for fabricating pixelized phosphors |
US5393647A (en) | 1993-07-16 | 1995-02-28 | Armand P. Neukermans | Method of making superhard tips for micro-probe microscopy and field emission |
US5404070A (en) | 1993-10-04 | 1995-04-04 | Industrial Technology Research Institute | Low capacitance field emission display by gate-cathode dielectric |
US5473218A (en) | 1994-05-31 | 1995-12-05 | Motorola, Inc. | Diamond cold cathode using patterned metal for electron emission control |
US5608283A (en) * | 1994-06-29 | 1997-03-04 | Candescent Technologies Corporation | Electron-emitting devices utilizing electron-emissive particles which typically contain carbon |
-
1994
- 1994-10-26 WO PCT/US1994/012311 patent/WO1995012835A1/en not_active Application Discontinuation
- 1994-10-26 KR KR1019960702317A patent/KR100366191B1/ko not_active IP Right Cessation
- 1994-10-26 AU AU10438/95A patent/AU1043895A/en not_active Abandoned
- 1994-10-26 RU RU96112159A patent/RU2141698C1/ru active
- 1994-10-26 CA CA002172803A patent/CA2172803A1/en not_active Abandoned
- 1994-10-26 JP JP51328795A patent/JP3726117B2/ja not_active Expired - Fee Related
- 1994-10-26 EP EP95901056A patent/EP0727057A4/en not_active Withdrawn
- 1994-10-26 CN CN94194049.7A patent/CN1134754A/zh active Pending
-
1995
- 1995-06-07 US US08/473,911 patent/US5652083A/en not_active Expired - Fee Related
- 1995-06-07 US US08/475,167 patent/US5601966A/en not_active Expired - Lifetime
- 1995-06-07 US US08/485,954 patent/US5614353A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5614353A (en) | 1997-03-25 |
US5601966A (en) | 1997-02-11 |
WO1995012835A1 (en) | 1995-05-11 |
CA2172803A1 (en) | 1995-05-11 |
AU1043895A (en) | 1995-05-23 |
EP0727057A4 (en) | 1997-08-13 |
RU2141698C1 (ru) | 1999-11-20 |
KR100366191B1 (ko) | 2003-03-15 |
CN1134754A (zh) | 1996-10-30 |
EP0727057A1 (en) | 1996-08-21 |
JP3726117B2 (ja) | 2005-12-14 |
US5652083A (en) | 1997-07-29 |
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