JPH0945597A - 半導体製造装置及びロードロック室酸素濃度の制御方法及び自然酸化膜の生成方法 - Google Patents

半導体製造装置及びロードロック室酸素濃度の制御方法及び自然酸化膜の生成方法

Info

Publication number
JPH0945597A
JPH0945597A JP8118271A JP11827196A JPH0945597A JP H0945597 A JPH0945597 A JP H0945597A JP 8118271 A JP8118271 A JP 8118271A JP 11827196 A JP11827196 A JP 11827196A JP H0945597 A JPH0945597 A JP H0945597A
Authority
JP
Japan
Prior art keywords
load lock
lock chamber
oxygen concentration
oxygen
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8118271A
Other languages
English (en)
Japanese (ja)
Inventor
Shinichi Shimada
真一 島田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Kokusai Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Co Ltd filed Critical Kokusai Electric Co Ltd
Priority to JP8118271A priority Critical patent/JPH0945597A/ja
Priority to US08/648,541 priority patent/US5735961A/en
Priority to KR1019960017157A priority patent/KR100245259B1/ko
Priority to TW085106174A priority patent/TW322590B/zh
Publication of JPH0945597A publication Critical patent/JPH0945597A/ja
Priority to US09/009,991 priority patent/US5879415A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3312—Vertical transfer of a batch of workpieces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
JP8118271A 1995-05-25 1996-04-16 半導体製造装置及びロードロック室酸素濃度の制御方法及び自然酸化膜の生成方法 Pending JPH0945597A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP8118271A JPH0945597A (ja) 1995-05-25 1996-04-16 半導体製造装置及びロードロック室酸素濃度の制御方法及び自然酸化膜の生成方法
US08/648,541 US5735961A (en) 1995-05-25 1996-05-16 Semiconductor fabricating apparatus, method for controlling oxygen concentration within load-lock chamber and method for generating native oxide
KR1019960017157A KR100245259B1 (ko) 1995-05-25 1996-05-21 반도체제조장치, 로드록실의 산소농도 제어방법 및 자연산화막의 생성방법
TW085106174A TW322590B (https=) 1995-05-25 1996-05-24
US09/009,991 US5879415A (en) 1995-05-25 1998-01-21 Semiconductor fabricating apparatus, method for controlling oxygen concentration within load-lock chamber and method for generating native oxide

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP15089195 1995-05-25
JP7-150891 1995-05-25
JP8118271A JPH0945597A (ja) 1995-05-25 1996-04-16 半導体製造装置及びロードロック室酸素濃度の制御方法及び自然酸化膜の生成方法

Publications (1)

Publication Number Publication Date
JPH0945597A true JPH0945597A (ja) 1997-02-14

Family

ID=26456233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8118271A Pending JPH0945597A (ja) 1995-05-25 1996-04-16 半導体製造装置及びロードロック室酸素濃度の制御方法及び自然酸化膜の生成方法

Country Status (4)

Country Link
US (2) US5735961A (https=)
JP (1) JPH0945597A (https=)
KR (1) KR100245259B1 (https=)
TW (1) TW322590B (https=)

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KR20030094994A (ko) * 2002-06-11 2003-12-18 동부전자 주식회사 폴리마이드 베이크 오븐 장비의 산소 농도 측정 시스템
US6878645B2 (en) 2000-07-13 2005-04-12 Shin-Etsu Handotai Co., Ltd. Method for manufacturing silicon wafer
JP2011057455A (ja) * 2009-09-04 2011-03-24 Taiyo Nippon Sanso Corp 太陽電池用セレン化水素混合ガスの供給方法及び供給装置
US8443484B2 (en) 2007-08-14 2013-05-21 Hitachi Kokusai Electric Inc. Substrate processing apparatus
JP2017005283A (ja) * 2012-10-31 2017-01-05 Tdk株式会社 Ｅｆｅｍシステム

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JP3120695B2 (ja) 1995-05-19 2000-12-25 株式会社日立製作所 電子回路の製造方法
US5879458A (en) * 1996-09-13 1999-03-09 Semifab Incorporated Molecular contamination control system
US6016611A (en) * 1998-07-13 2000-01-25 Applied Komatsu Technology, Inc. Gas flow control in a substrate processing system
US6673155B2 (en) * 1998-10-15 2004-01-06 Tokyo Electron Limited Apparatus for forming coating film and apparatus for curing the coating film
FI118342B (fi) * 1999-05-10 2007-10-15 Asm Int Laite ohutkalvojen valmistamiseksi
US6524389B1 (en) * 1999-05-24 2003-02-25 Tokyo Electron Limited Substrate processing apparatus
JP2001023978A (ja) * 1999-07-05 2001-01-26 Mitsubishi Electric Corp 半導体装置の製造装置および製造方法
US6376387B2 (en) * 1999-07-09 2002-04-23 Applied Materials, Inc. Method of sealing an epitaxial silicon layer on a substrate
JP2001319885A (ja) * 2000-03-02 2001-11-16 Hitachi Kokusai Electric Inc 基板処理装置及び半導体製造方法
US6455098B2 (en) * 2000-03-09 2002-09-24 Semix Incorporated Wafer processing apparatus and method
JP2001284276A (ja) * 2000-03-30 2001-10-12 Hitachi Kokusai Electric Inc 基板処理装置
KR100364656B1 (ko) * 2000-06-22 2002-12-16 삼성전자 주식회사 실리사이드 증착을 위한 화학 기상 증착 방법 및 이를수행하기 위한 장치
US6936134B2 (en) * 2000-11-14 2005-08-30 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US6710845B2 (en) * 2000-12-29 2004-03-23 Intel Corporation Purging gas from a photolithography enclosure between a mask protective device and a patterned mask
JP2002217118A (ja) * 2001-01-22 2002-08-02 Japan Pionics Co Ltd 窒化ガリウム膜半導体の製造装置、排ガス浄化装置、及び製造設備
US6939579B2 (en) * 2001-03-07 2005-09-06 Asm International N.V. ALD reactor and method with controlled wall temperature
US6750155B2 (en) * 2001-08-08 2004-06-15 Lam Research Corporation Methods to minimize moisture condensation over a substrate in a rapid cycle chamber
US20060083495A1 (en) * 2002-07-15 2006-04-20 Qiu Taiquing Variable heater element for low to high temperature ranges
US20070243317A1 (en) * 2002-07-15 2007-10-18 Du Bois Dale R Thermal Processing System and Configurable Vertical Chamber
TW577124B (en) * 2002-12-03 2004-02-21 Mosel Vitelic Inc Method for estimating the forming thickness of the oxide layer and determining whether the pipes occur leakages
US20110272707A1 (en) * 2010-05-06 2011-11-10 Qs Semiconductor Australia Pty Ltd Substrates and methods of forming film structures to facilitate silicon carbide epitaxy
KR20120030917A (ko) * 2010-09-21 2012-03-29 가부시키가이샤 히다치 하이테크놀로지즈 진공처리장치
KR101364701B1 (ko) * 2011-11-17 2014-02-20 주식회사 유진테크 위상차를 갖는 반응가스를 공급하는 기판 처리 장치
KR101408084B1 (ko) * 2011-11-17 2014-07-04 주식회사 유진테크 보조가스공급포트를 포함하는 기판 처리 장치
JP5598728B2 (ja) * 2011-12-22 2014-10-01 株式会社ダイフク 不活性ガス注入装置
KR101419886B1 (ko) * 2012-11-12 2014-07-16 (주)쎄미시스코 산소 감지를 위한 배기 라인을 포함하는 기판 처리 장치
KR101720620B1 (ko) * 2015-04-21 2017-03-28 주식회사 유진테크 기판처리장치 및 챔버 세정방법
JP7042115B2 (ja) * 2018-02-28 2022-03-25 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
CN109541140A (zh) * 2018-11-23 2019-03-29 上海华力微电子有限公司 一种监测缓冲腔体氧气浓度的方法
KR102807467B1 (ko) 2023-02-28 2025-05-15 에이치비솔루션㈜ 산소 농도 조절 및 유지 시스템 및 방법
CN116190279B (zh) * 2023-03-15 2026-03-24 北京北方华创微电子装备有限公司 尾气排放装置及半导体热处理设备

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JP3330166B2 (ja) * 1992-12-04 2002-09-30 東京エレクトロン株式会社 処理装置
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6878645B2 (en) 2000-07-13 2005-04-12 Shin-Etsu Handotai Co., Ltd. Method for manufacturing silicon wafer
KR20030094994A (ko) * 2002-06-11 2003-12-18 동부전자 주식회사 폴리마이드 베이크 오븐 장비의 산소 농도 측정 시스템
US8443484B2 (en) 2007-08-14 2013-05-21 Hitachi Kokusai Electric Inc. Substrate processing apparatus
JP2011057455A (ja) * 2009-09-04 2011-03-24 Taiyo Nippon Sanso Corp 太陽電池用セレン化水素混合ガスの供給方法及び供給装置
JP2017005283A (ja) * 2012-10-31 2017-01-05 Tdk株式会社 Ｅｆｅｍシステム

Also Published As

Publication number Publication date
KR960043020A (ko) 1996-12-21
TW322590B (https=) 1997-12-11
US5735961A (en) 1998-04-07
US5879415A (en) 1999-03-09
KR100245259B1 (ko) 2000-02-15

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