KR100245259B1 - 반도체제조장치, 로드록실의 산소농도 제어방법 및 자연산화막의 생성방법 - Google Patents

반도체제조장치, 로드록실의 산소농도 제어방법 및 자연산화막의 생성방법 Download PDF

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Publication number
KR100245259B1
KR100245259B1 KR1019960017157A KR19960017157A KR100245259B1 KR 100245259 B1 KR100245259 B1 KR 100245259B1 KR 1019960017157 A KR1019960017157 A KR 1019960017157A KR 19960017157 A KR19960017157 A KR 19960017157A KR 100245259 B1 KR100245259 B1 KR 100245259B1
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South Korea
Prior art keywords
oxygen
lock chamber
gas
load lock
flow rate
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KR1019960017157A
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English (en)
Korean (ko)
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KR960043020A (ko
Inventor
마사카즈 시마다
Original Assignee
엔도 마코토
쿠사일렉트릭 콤파니 리미티드
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Publication of KR960043020A publication Critical patent/KR960043020A/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3312—Vertical transfer of a batch of workpieces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
KR1019960017157A 1995-05-25 1996-05-21 반도체제조장치, 로드록실의 산소농도 제어방법 및 자연산화막의 생성방법 Expired - Lifetime KR100245259B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP15089195 1995-05-25
JP95/150891 1995-05-25
JP95-150891 1995-05-25
JP96/118271 1996-04-16
JP96-118271 1996-04-16
JP8118271A JPH0945597A (ja) 1995-05-25 1996-04-16 半導体製造装置及びロードロック室酸素濃度の制御方法及び自然酸化膜の生成方法

Publications (2)

Publication Number Publication Date
KR960043020A KR960043020A (ko) 1996-12-21
KR100245259B1 true KR100245259B1 (ko) 2000-02-15

Family

ID=26456233

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960017157A Expired - Lifetime KR100245259B1 (ko) 1995-05-25 1996-05-21 반도체제조장치, 로드록실의 산소농도 제어방법 및 자연산화막의 생성방법

Country Status (4)

Country Link
US (2) US5735961A (https=)
JP (1) JPH0945597A (https=)
KR (1) KR100245259B1 (https=)
TW (1) TW322590B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240133021A (ko) 2023-02-28 2024-09-04 에이치비솔루션㈜ 산소 농도 조절 및 유지 시스템 및 방법

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3120695B2 (ja) 1995-05-19 2000-12-25 株式会社日立製作所 電子回路の製造方法
US5879458A (en) * 1996-09-13 1999-03-09 Semifab Incorporated Molecular contamination control system
US6016611A (en) * 1998-07-13 2000-01-25 Applied Komatsu Technology, Inc. Gas flow control in a substrate processing system
US6673155B2 (en) * 1998-10-15 2004-01-06 Tokyo Electron Limited Apparatus for forming coating film and apparatus for curing the coating film
FI118342B (fi) * 1999-05-10 2007-10-15 Asm Int Laite ohutkalvojen valmistamiseksi
US6524389B1 (en) * 1999-05-24 2003-02-25 Tokyo Electron Limited Substrate processing apparatus
JP2001023978A (ja) * 1999-07-05 2001-01-26 Mitsubishi Electric Corp 半導体装置の製造装置および製造方法
US6376387B2 (en) * 1999-07-09 2002-04-23 Applied Materials, Inc. Method of sealing an epitaxial silicon layer on a substrate
JP2001319885A (ja) * 2000-03-02 2001-11-16 Hitachi Kokusai Electric Inc 基板処理装置及び半導体製造方法
US6455098B2 (en) * 2000-03-09 2002-09-24 Semix Incorporated Wafer processing apparatus and method
JP2001284276A (ja) * 2000-03-30 2001-10-12 Hitachi Kokusai Electric Inc 基板処理装置
KR100364656B1 (ko) * 2000-06-22 2002-12-16 삼성전자 주식회사 실리사이드 증착을 위한 화학 기상 증착 방법 및 이를수행하기 위한 장치
JP4000583B2 (ja) * 2000-07-13 2007-10-31 信越半導体株式会社 シリコンウェーハの製造方法
US6936134B2 (en) * 2000-11-14 2005-08-30 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US6710845B2 (en) * 2000-12-29 2004-03-23 Intel Corporation Purging gas from a photolithography enclosure between a mask protective device and a patterned mask
JP2002217118A (ja) * 2001-01-22 2002-08-02 Japan Pionics Co Ltd 窒化ガリウム膜半導体の製造装置、排ガス浄化装置、及び製造設備
US6939579B2 (en) * 2001-03-07 2005-09-06 Asm International N.V. ALD reactor and method with controlled wall temperature
US6750155B2 (en) * 2001-08-08 2004-06-15 Lam Research Corporation Methods to minimize moisture condensation over a substrate in a rapid cycle chamber
KR20030094994A (ko) * 2002-06-11 2003-12-18 동부전자 주식회사 폴리마이드 베이크 오븐 장비의 산소 농도 측정 시스템
US20060083495A1 (en) * 2002-07-15 2006-04-20 Qiu Taiquing Variable heater element for low to high temperature ranges
US20070243317A1 (en) * 2002-07-15 2007-10-18 Du Bois Dale R Thermal Processing System and Configurable Vertical Chamber
TW577124B (en) * 2002-12-03 2004-02-21 Mosel Vitelic Inc Method for estimating the forming thickness of the oxide layer and determining whether the pipes occur leakages
US8443484B2 (en) 2007-08-14 2013-05-21 Hitachi Kokusai Electric Inc. Substrate processing apparatus
JP5518404B2 (ja) * 2009-09-04 2014-06-11 大陽日酸株式会社 太陽電池用セレン化水素混合ガスの供給方法及び供給装置
US20110272707A1 (en) * 2010-05-06 2011-11-10 Qs Semiconductor Australia Pty Ltd Substrates and methods of forming film structures to facilitate silicon carbide epitaxy
KR20120030917A (ko) * 2010-09-21 2012-03-29 가부시키가이샤 히다치 하이테크놀로지즈 진공처리장치
KR101364701B1 (ko) * 2011-11-17 2014-02-20 주식회사 유진테크 위상차를 갖는 반응가스를 공급하는 기판 처리 장치
KR101408084B1 (ko) * 2011-11-17 2014-07-04 주식회사 유진테크 보조가스공급포트를 포함하는 기판 처리 장치
JP5598728B2 (ja) * 2011-12-22 2014-10-01 株式会社ダイフク 不活性ガス注入装置
JP6024980B2 (ja) * 2012-10-31 2016-11-16 Tdk株式会社 ロードポートユニット及びｅｆｅｍシステム
KR101419886B1 (ko) * 2012-11-12 2014-07-16 (주)쎄미시스코 산소 감지를 위한 배기 라인을 포함하는 기판 처리 장치
KR101720620B1 (ko) * 2015-04-21 2017-03-28 주식회사 유진테크 기판처리장치 및 챔버 세정방법
JP7042115B2 (ja) * 2018-02-28 2022-03-25 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
CN109541140A (zh) * 2018-11-23 2019-03-29 上海华力微电子有限公司 一种监测缓冲腔体氧气浓度的方法
CN116190279B (zh) * 2023-03-15 2026-03-24 北京北方华创微电子装备有限公司 尾气排放装置及半导体热处理设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05347295A (ja) * 1992-06-16 1993-12-27 Fuji Electric Co Ltd 半導体ウェーハのプロセス処理装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369031A (en) * 1981-09-15 1983-01-18 Thermco Products Corporation Gas control system for chemical vapor deposition system
JP2772835B2 (ja) * 1989-08-28 1998-07-09 東京エレクトロン株式会社 基板処理装置及び真空処理方法
US5277579A (en) * 1991-03-15 1994-01-11 Tokyo Electron Sagami Limited Wafers transferring method in vertical type heat treatment apparatus and the vertical type heat treatment apparatus provided with a wafers transferring system
JP3149206B2 (ja) * 1991-05-30 2001-03-26 東京エレクトロン株式会社 熱処理装置
JPH05218176A (ja) * 1992-02-07 1993-08-27 Tokyo Electron Tohoku Kk 熱処理方法及び被処理体の移載方法
US5407350A (en) * 1992-02-13 1995-04-18 Tokyo Electron Limited Heat-treatment apparatus
JP3186262B2 (ja) * 1992-10-14 2001-07-11 ソニー株式会社 半導体装置の製造方法
JP3330166B2 (ja) * 1992-12-04 2002-09-30 東京エレクトロン株式会社 処理装置
JP3218488B2 (ja) * 1993-03-16 2001-10-15 東京エレクトロン株式会社 処理装置
US5527390A (en) * 1993-03-19 1996-06-18 Tokyo Electron Kabushiki Treatment system including a plurality of treatment apparatus
KR100221983B1 (ko) * 1993-04-13 1999-09-15 히가시 데쓰로 처리장치
TW273574B (https=) * 1993-12-10 1996-04-01 Tokyo Electron Co Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05347295A (ja) * 1992-06-16 1993-12-27 Fuji Electric Co Ltd 半導体ウェーハのプロセス処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240133021A (ko) 2023-02-28 2024-09-04 에이치비솔루션㈜ 산소 농도 조절 및 유지 시스템 및 방법

Also Published As

Publication number Publication date
JPH0945597A (ja) 1997-02-14
KR960043020A (ko) 1996-12-21
TW322590B (https=) 1997-12-11
US5735961A (en) 1998-04-07
US5879415A (en) 1999-03-09

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