TW322590B - - Google Patents

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Publication number
TW322590B
TW322590B TW085106174A TW85106174A TW322590B TW 322590 B TW322590 B TW 322590B TW 085106174 A TW085106174 A TW 085106174A TW 85106174 A TW85106174 A TW 85106174A TW 322590 B TW322590 B TW 322590B
Authority
TW
Taiwan
Prior art keywords
gas
oxygen
oxygen concentration
charge
item
Prior art date
Application number
TW085106174A
Other languages
English (en)
Chinese (zh)
Original Assignee
Nat Denki Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Denki Kk filed Critical Nat Denki Kk
Application granted granted Critical
Publication of TW322590B publication Critical patent/TW322590B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3312—Vertical transfer of a batch of workpieces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
TW085106174A 1995-05-25 1996-05-24 TW322590B (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15089195 1995-05-25
JP8118271A JPH0945597A (ja) 1995-05-25 1996-04-16 半導体製造装置及びロードロック室酸素濃度の制御方法及び自然酸化膜の生成方法

Publications (1)

Publication Number Publication Date
TW322590B true TW322590B (https=) 1997-12-11

Family

ID=26456233

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085106174A TW322590B (https=) 1995-05-25 1996-05-24

Country Status (4)

Country Link
US (2) US5735961A (https=)
JP (1) JPH0945597A (https=)
KR (1) KR100245259B1 (https=)
TW (1) TW322590B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109541140A (zh) * 2018-11-23 2019-03-29 上海华力微电子有限公司 一种监测缓冲腔体氧气浓度的方法

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JP3120695B2 (ja) 1995-05-19 2000-12-25 株式会社日立製作所 電子回路の製造方法
US5879458A (en) * 1996-09-13 1999-03-09 Semifab Incorporated Molecular contamination control system
US6016611A (en) * 1998-07-13 2000-01-25 Applied Komatsu Technology, Inc. Gas flow control in a substrate processing system
US6673155B2 (en) * 1998-10-15 2004-01-06 Tokyo Electron Limited Apparatus for forming coating film and apparatus for curing the coating film
FI118342B (fi) * 1999-05-10 2007-10-15 Asm Int Laite ohutkalvojen valmistamiseksi
US6524389B1 (en) * 1999-05-24 2003-02-25 Tokyo Electron Limited Substrate processing apparatus
JP2001023978A (ja) * 1999-07-05 2001-01-26 Mitsubishi Electric Corp 半導体装置の製造装置および製造方法
US6376387B2 (en) * 1999-07-09 2002-04-23 Applied Materials, Inc. Method of sealing an epitaxial silicon layer on a substrate
JP2001319885A (ja) * 2000-03-02 2001-11-16 Hitachi Kokusai Electric Inc 基板処理装置及び半導体製造方法
US6455098B2 (en) * 2000-03-09 2002-09-24 Semix Incorporated Wafer processing apparatus and method
JP2001284276A (ja) * 2000-03-30 2001-10-12 Hitachi Kokusai Electric Inc 基板処理装置
KR100364656B1 (ko) * 2000-06-22 2002-12-16 삼성전자 주식회사 실리사이드 증착을 위한 화학 기상 증착 방법 및 이를수행하기 위한 장치
JP4000583B2 (ja) * 2000-07-13 2007-10-31 信越半導体株式会社 シリコンウェーハの製造方法
US6936134B2 (en) * 2000-11-14 2005-08-30 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US6710845B2 (en) * 2000-12-29 2004-03-23 Intel Corporation Purging gas from a photolithography enclosure between a mask protective device and a patterned mask
JP2002217118A (ja) * 2001-01-22 2002-08-02 Japan Pionics Co Ltd 窒化ガリウム膜半導体の製造装置、排ガス浄化装置、及び製造設備
US6939579B2 (en) * 2001-03-07 2005-09-06 Asm International N.V. ALD reactor and method with controlled wall temperature
US6750155B2 (en) * 2001-08-08 2004-06-15 Lam Research Corporation Methods to minimize moisture condensation over a substrate in a rapid cycle chamber
KR20030094994A (ko) * 2002-06-11 2003-12-18 동부전자 주식회사 폴리마이드 베이크 오븐 장비의 산소 농도 측정 시스템
US20060083495A1 (en) * 2002-07-15 2006-04-20 Qiu Taiquing Variable heater element for low to high temperature ranges
US20070243317A1 (en) * 2002-07-15 2007-10-18 Du Bois Dale R Thermal Processing System and Configurable Vertical Chamber
TW577124B (en) * 2002-12-03 2004-02-21 Mosel Vitelic Inc Method for estimating the forming thickness of the oxide layer and determining whether the pipes occur leakages
US8443484B2 (en) 2007-08-14 2013-05-21 Hitachi Kokusai Electric Inc. Substrate processing apparatus
JP5518404B2 (ja) * 2009-09-04 2014-06-11 大陽日酸株式会社 太陽電池用セレン化水素混合ガスの供給方法及び供給装置
US20110272707A1 (en) * 2010-05-06 2011-11-10 Qs Semiconductor Australia Pty Ltd Substrates and methods of forming film structures to facilitate silicon carbide epitaxy
KR20120030917A (ko) * 2010-09-21 2012-03-29 가부시키가이샤 히다치 하이테크놀로지즈 진공처리장치
KR101364701B1 (ko) * 2011-11-17 2014-02-20 주식회사 유진테크 위상차를 갖는 반응가스를 공급하는 기판 처리 장치
KR101408084B1 (ko) * 2011-11-17 2014-07-04 주식회사 유진테크 보조가스공급포트를 포함하는 기판 처리 장치
JP5598728B2 (ja) * 2011-12-22 2014-10-01 株式会社ダイフク 不活性ガス注入装置
JP6024980B2 (ja) * 2012-10-31 2016-11-16 Tdk株式会社 ロードポートユニット及びｅｆｅｍシステム
KR101419886B1 (ko) * 2012-11-12 2014-07-16 (주)쎄미시스코 산소 감지를 위한 배기 라인을 포함하는 기판 처리 장치
KR101720620B1 (ko) * 2015-04-21 2017-03-28 주식회사 유진테크 기판처리장치 및 챔버 세정방법
JP7042115B2 (ja) * 2018-02-28 2022-03-25 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
KR102807467B1 (ko) 2023-02-28 2025-05-15 에이치비솔루션㈜ 산소 농도 조절 및 유지 시스템 및 방법
CN116190279B (zh) * 2023-03-15 2026-03-24 北京北方华创微电子装备有限公司 尾气排放装置及半导体热处理设备

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US4369031A (en) * 1981-09-15 1983-01-18 Thermco Products Corporation Gas control system for chemical vapor deposition system
JP2772835B2 (ja) * 1989-08-28 1998-07-09 東京エレクトロン株式会社 基板処理装置及び真空処理方法
US5277579A (en) * 1991-03-15 1994-01-11 Tokyo Electron Sagami Limited Wafers transferring method in vertical type heat treatment apparatus and the vertical type heat treatment apparatus provided with a wafers transferring system
JP3149206B2 (ja) * 1991-05-30 2001-03-26 東京エレクトロン株式会社 熱処理装置
JPH05218176A (ja) * 1992-02-07 1993-08-27 Tokyo Electron Tohoku Kk 熱処理方法及び被処理体の移載方法
US5407350A (en) * 1992-02-13 1995-04-18 Tokyo Electron Limited Heat-treatment apparatus
JPH05347295A (ja) * 1992-06-16 1993-12-27 Fuji Electric Co Ltd 半導体ウェーハのプロセス処理装置
JP3186262B2 (ja) * 1992-10-14 2001-07-11 ソニー株式会社 半導体装置の製造方法
JP3330166B2 (ja) * 1992-12-04 2002-09-30 東京エレクトロン株式会社 処理装置
JP3218488B2 (ja) * 1993-03-16 2001-10-15 東京エレクトロン株式会社 処理装置
US5527390A (en) * 1993-03-19 1996-06-18 Tokyo Electron Kabushiki Treatment system including a plurality of treatment apparatus
KR100221983B1 (ko) * 1993-04-13 1999-09-15 히가시 데쓰로 처리장치
TW273574B (https=) * 1993-12-10 1996-04-01 Tokyo Electron Co Ltd

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109541140A (zh) * 2018-11-23 2019-03-29 上海华力微电子有限公司 一种监测缓冲腔体氧气浓度的方法

Also Published As

Publication number Publication date
JPH0945597A (ja) 1997-02-14
KR960043020A (ko) 1996-12-21
US5735961A (en) 1998-04-07
US5879415A (en) 1999-03-09
KR100245259B1 (ko) 2000-02-15

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