JPH09306834A5 - - Google Patents

Info

Publication number
JPH09306834A5
JPH09306834A5 JP1997033869A JP3386997A JPH09306834A5 JP H09306834 A5 JPH09306834 A5 JP H09306834A5 JP 1997033869 A JP1997033869 A JP 1997033869A JP 3386997 A JP3386997 A JP 3386997A JP H09306834 A5 JPH09306834 A5 JP H09306834A5
Authority
JP
Japan
Prior art keywords
mask
exposure apparatus
projection exposure
ray projection
chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997033869A
Other languages
English (en)
Japanese (ja)
Other versions
JP3814359B2 (ja
JPH09306834A (ja
Filing date
Publication date
Priority claimed from JP3386997A external-priority patent/JP3814359B2/ja
Priority to JP3386997A priority Critical patent/JP3814359B2/ja
Application filed filed Critical
Priority to US08/813,349 priority patent/US6084938A/en
Publication of JPH09306834A publication Critical patent/JPH09306834A/ja
Priority to US09/342,897 priority patent/US6310934B1/en
Priority to US09/948,041 priority patent/US6668037B2/en
Priority to US10/092,280 priority patent/US6584168B2/en
Priority to US10/679,278 priority patent/US6836531B2/en
Publication of JPH09306834A5 publication Critical patent/JPH09306834A5/ja
Publication of JP3814359B2 publication Critical patent/JP3814359B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP3386997A 1996-03-12 1997-02-18 Ｘ線投影露光装置及びデバイス製造方法 Expired - Fee Related JP3814359B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP3386997A JP3814359B2 (ja) 1996-03-12 1997-02-18 Ｘ線投影露光装置及びデバイス製造方法
US08/813,349 US6084938A (en) 1996-03-12 1997-03-07 X-ray projection exposure apparatus and a device manufacturing method
US09/342,897 US6310934B1 (en) 1996-03-12 1999-06-29 X-ray projection exposure apparatus and a device manufacturing method
US09/948,041 US6668037B2 (en) 1996-03-12 2001-09-07 X-ray projection exposure apparatus and a device manufacturing method
US10/092,280 US6584168B2 (en) 1996-03-12 2002-03-07 X-ray projection exposure apparatus and a device manufacturing method
US10/679,278 US6836531B2 (en) 1996-03-12 2003-10-07 X-ray projection exposure apparatus and a device manufacturing method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8-54636 1996-03-12
JP5463696 1996-03-12
JP3386997A JP3814359B2 (ja) 1996-03-12 1997-02-18 Ｘ線投影露光装置及びデバイス製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005234194A Division JP3985003B2 (ja) 1996-03-12 2005-08-12 Ｘ線投影露光装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JPH09306834A JPH09306834A (ja) 1997-11-28
JPH09306834A5 true JPH09306834A5 (enExample) 2005-06-16
JP3814359B2 JP3814359B2 (ja) 2006-08-30

Family

ID=26372650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3386997A Expired - Fee Related JP3814359B2 (ja) 1996-03-12 1997-02-18 Ｘ線投影露光装置及びデバイス製造方法

Country Status (2)

Country Link
US (5) US6084938A (enExample)
JP (1) JP3814359B2 (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
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JP3814359B2 (ja) * 1996-03-12 2006-08-30 キヤノン株式会社 Ｘ線投影露光装置及びデバイス製造方法
JPH11307430A (ja) * 1998-04-23 1999-11-05 Canon Inc 露光装置およびデバイス製造方法ならびに駆動装置
EP1139176B1 (en) * 2000-03-24 2006-05-10 ASML Netherlands B.V. Lithographic apparatus and mask table
US6556281B1 (en) * 2000-05-23 2003-04-29 Asml Us, Inc. Flexible piezoelectric chuck and method of using the same
JP2002299228A (ja) * 2001-04-03 2002-10-11 Nikon Corp レチクル、それを用いた露光装置及び露光方法
DE60217587D1 (de) * 2001-07-26 2007-03-08 Canon Kk Substrathalter und ein Belichtungsapparat
US6798494B2 (en) * 2001-08-30 2004-09-28 Euv Llc Apparatus for generating partially coherent radiation
US6859263B2 (en) * 2001-08-30 2005-02-22 Euv Llc Apparatus for generating partially coherent radiation
JP2003110012A (ja) * 2001-09-28 2003-04-11 Nissin Electric Co Ltd 基板保持方法およびその装置
US6927887B2 (en) 2001-10-16 2005-08-09 Euv Llc Holographic illuminator for synchrotron-based projection lithography systems
SE524370C2 (sv) * 2002-05-10 2004-08-03 Tetra Laval Holdings & Finance Förpackningslaminat, bigvals, samt ett skikt för användning till ett förpackningslaminat
US7092231B2 (en) * 2002-08-23 2006-08-15 Asml Netherlands B.V. Chuck, lithographic apparatus and device manufacturing method
EP1391786B1 (en) * 2002-08-23 2010-10-06 ASML Netherlands B.V. Chuck, lithographic apparatus and device manufacturing method
JP2004273926A (ja) * 2003-03-11 2004-09-30 Canon Inc 露光装置
JP4307130B2 (ja) 2003-04-08 2009-08-05 キヤノン株式会社 露光装置
JP2005033179A (ja) 2003-06-18 2005-02-03 Canon Inc 露光装置及びデバイス製造方法
JP4565915B2 (ja) * 2003-07-23 2010-10-20 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ投影装置及び物品保持器
JP4464097B2 (ja) * 2003-09-29 2010-05-19 キヤノン株式会社 配線構造および露光装置
EP1530088B1 (en) * 2003-11-05 2007-08-08 ASML Netherlands B.V. Lithographic apparatus
EP2267535A1 (en) * 2003-11-05 2010-12-29 ASML Netherlands BV Lithographic apparatus and device manufacturing method
US7245357B2 (en) * 2003-12-15 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7489388B2 (en) * 2003-12-22 2009-02-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8749762B2 (en) * 2004-05-11 2014-06-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
GB2414858A (en) * 2004-06-03 2005-12-07 Nanobeam Ltd A workpiece or specimen support assembly for a charged particle beam system
US20050275841A1 (en) * 2004-06-09 2005-12-15 Asml Netherlands B.V. Alignment marker and lithographic apparatus and device manufacturing method using the same
WO2006033442A1 (ja) * 2004-09-22 2006-03-30 Nikon Corporation 反射型マスク、反射型マスクの製造方法及び露光装置
WO2006068461A1 (en) * 2004-12-23 2006-06-29 Asml Netherlands B.V. Support structure and lithographic apparatus
KR100722932B1 (ko) * 2005-09-26 2007-05-30 삼성전자주식회사 온도 감지 장치를 구비하는 정전척 및 이를 구비하는 노광장비 및 포토마스크 표면의 온도를 감지하는 방법
US8325321B2 (en) * 2006-07-28 2012-12-04 Mapper Lithography Ip B.V. Lithography system, method of heat dissipation and frame
US20080073596A1 (en) * 2006-08-24 2008-03-27 Asml Netherlands B.V. Lithographic apparatus and method
NL1036544A1 (nl) 2008-02-21 2009-08-24 Asml Netherlands Bv A lithographic apparatus having a chuck with a visco-elastic damping layer.
US8194384B2 (en) * 2008-07-23 2012-06-05 Tokyo Electron Limited High temperature electrostatic chuck and method of using
NL2003528A (en) * 2008-10-23 2010-04-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP5197505B2 (ja) * 2009-06-19 2013-05-15 東京エレクトロン株式会社 ウエハチャック用の温度センサ
WO2013050243A1 (en) * 2011-10-06 2013-04-11 Asml Netherlands B.V. Chuck, lithography apparatus and method of using a chuck
JP5883515B2 (ja) * 2012-02-06 2016-03-15 エーエスエムエル ネザーランズ ビー．ブイ． 対象物を保持するための支持構造を備えるリソグラフィ装置及びそれに用いられる支持構造
US9715175B2 (en) 2012-06-15 2017-07-25 Nikon Corporation Mask protection device, exposure apparatus, and method for manufacturing device
NL2012204A (en) * 2013-02-07 2014-12-18 Asml Holding Nv Lithographic apparatus and method.
JP6303346B2 (ja) * 2013-09-09 2018-04-04 凸版印刷株式会社 反射型マスクブランクおよび反射型マスク
US10644239B2 (en) 2014-11-17 2020-05-05 Emagin Corporation High precision, high resolution collimating shadow mask and method for fabricating a micro-display
US10248024B2 (en) * 2015-10-08 2019-04-02 Univ Paris Xiii Paris-Nord Villetaneuse Method for making a micro- or nano-scale patterned layer of material by photolithography
TWI721170B (zh) * 2016-05-24 2021-03-11 美商伊麥傑公司 蔽蔭遮罩沉積系統及其方法
KR102584518B1 (ko) * 2018-07-04 2023-10-05 삼성디스플레이 주식회사 정전척 유닛 및 그것을 이용한 박막 증착 장치
US10663871B2 (en) * 2018-07-30 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Reticle stage and method for using the same
WO2020094467A1 (en) * 2018-11-09 2020-05-14 Asml Holding N.V. Sensor array for real time detection of reticle position and forces
WO2020236518A1 (en) * 2019-05-22 2020-11-26 The Board Of Trustees Of The University Of Illinois Photoresist-free deposition and patterning with vacuum ultraviolet lamps
JP2025530065A (ja) * 2022-09-13 2025-09-11 エーエスエムエル ネザーランズ ビー．ブイ． Ｅｕｖリソグラフィに使用されるパターニングデバイス電圧バイアスシステム、リソグラフィ装置、およびリソグラフィ装置におけるパターニングデバイスのパターニング表面の汚染を低減する方法

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EP0252734B1 (en) * 1986-07-11 2000-05-03 Canon Kabushiki Kaisha X-ray reduction projection exposure system of reflection type
DE3856054T2 (de) * 1987-02-18 1998-03-19 Canon K.K., Tokio/Tokyo Reflexionsmaske
JPH01284793A (ja) * 1988-05-11 1989-11-16 Canon Inc 基板支持装置
JP2748127B2 (ja) * 1988-09-02 1998-05-06 キヤノン株式会社 ウエハ保持方法
EP0357423B1 (en) * 1988-09-02 1995-03-15 Canon Kabushiki Kaisha An exposure apparatus
JP2770960B2 (ja) * 1988-10-06 1998-07-02 キヤノン株式会社 Ｓｏｒ−ｘ線露光装置
US5003567A (en) * 1989-02-09 1991-03-26 Hawryluk Andrew M Soft x-ray reduction camera for submicron lithography
JP2731950B2 (ja) * 1989-07-13 1998-03-25 キヤノン株式会社 露光方法
JP2958913B2 (ja) * 1990-05-21 1999-10-06 キヤノン株式会社 Ｘ線露光装置
JP2928603B2 (ja) * 1990-07-30 1999-08-03 キヤノン株式会社 Ｘ線露光装置用ウエハ冷却装置
JP3207871B2 (ja) * 1991-07-09 2001-09-10 キヤノン株式会社 ウエハ支持装置
US5220171A (en) * 1990-11-01 1993-06-15 Canon Kabushiki Kaisha Wafer holding device in an exposure apparatus
US5222112A (en) * 1990-12-27 1993-06-22 Hitachi, Ltd. X-ray pattern masking by a reflective reduction projection optical system
DE69220868T2 (de) * 1991-09-07 1997-11-06 Canon K.K., Tokio/Tokyo System zur Stabilisierung der Formen von optischen Elementen, Belichtungsvorrichtung unter Verwendung dieses Systems und Verfahren zur Herstellung von Halbleitervorrichtungen
JP3224157B2 (ja) * 1992-03-31 2001-10-29 キヤノン株式会社 Ｘ線マスクとその製造方法、並びに該ｘ線マスクを用いたデバイス製造方法とｘ線露光装置
JP3173928B2 (ja) 1992-09-25 2001-06-04 キヤノン株式会社 基板保持装置、基板保持方法および露光装置
US5608773A (en) * 1993-11-30 1997-03-04 Canon Kabushiki Kaisha Mask holding device, and an exposure apparatus and a device manufacturing method using the device
JP3244894B2 (ja) * 1993-11-30 2002-01-07 キヤノン株式会社 マスク保持方法、マスク及びマスクチャック、ならびにこれを用いた露光装置とデバイス製造方法
US5593800A (en) * 1994-01-06 1997-01-14 Canon Kabushiki Kaisha Mask manufacturing method and apparatus and device manufacturing method using a mask manufactured by the method or apparatus
DE69505448T2 (de) 1994-03-15 1999-04-22 Canon K.K., Tokio/Tokyo Maske und Maskenträger
US6038279A (en) 1995-10-16 2000-03-14 Canon Kabushiki Kaisha X-ray generating device, and exposure apparatus and semiconductor device production method using the X-ray generating device
JP3243168B2 (ja) 1996-02-06 2002-01-07 キヤノン株式会社 原版保持装置およびこれを用いた露光装置
US5854819A (en) 1996-02-07 1998-12-29 Canon Kabushiki Kaisha Mask supporting device and correction method therefor, and exposure apparatus and device producing method utilizing the same
JP3416373B2 (ja) 1996-02-20 2003-06-16 キヤノン株式会社 反射型ｘ線マスク構造体、ｘ線露光装置、ｘ線露光方法ならびに該反射型ｘ線マスク構造体を用いて作製されるデバイス
JP3814359B2 (ja) 1996-03-12 2006-08-30 キヤノン株式会社 Ｘ線投影露光装置及びデバイス製造方法

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