WO2006033442A1 - 反射型マスク、反射型マスクの製造方法及び露光装置 - Google Patents
反射型マスク、反射型マスクの製造方法及び露光装置 Download PDFInfo
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- WO2006033442A1 WO2006033442A1 PCT/JP2005/017662 JP2005017662W WO2006033442A1 WO 2006033442 A1 WO2006033442 A1 WO 2006033442A1 JP 2005017662 W JP2005017662 W JP 2005017662W WO 2006033442 A1 WO2006033442 A1 WO 2006033442A1
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- Prior art keywords
- reflective mask
- absorber
- mask
- layer
- reflective
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000010408 film Substances 0.000 claims description 76
- 239000006096 absorbing agent Substances 0.000 claims description 65
- 239000004020 conductor Substances 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000003963 antioxidant agent Substances 0.000 claims description 3
- 230000003078 antioxidant effect Effects 0.000 claims description 3
- 230000001568 sexual effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 77
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 235000012489 doughnuts Nutrition 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
Definitions
- the present invention uses EUV light (in the present specification and claims, a light or a soft X-ray having a wavelength of 150 nm or less is also used. It may also be called an extreme ultraviolet light).
- EUV light in the present specification and claims, a light or a soft X-ray having a wavelength of 150 nm or less is also used. It may also be called an extreme ultraviolet light).
- the present invention relates to a writing reflective mask used in an EUV exposure apparatus that projects a pattern formed on a mask onto a sensitive substrate such as a wafer, a manufacturing method thereof, and an exposure apparatus using the reflective mask. Background art
- EUV Extreme UltraViolet
- This technology is recently called EUV (Extreme UltraViolet) lithography, and has a resolution of 70 nm or less, which is impossible with conventional optical lithography using light with a wavelength of about 190 nm. It is expected as a technology.
- the imaginary part k of this refractive index represents the absorption of ultrashort ultraviolet rays. Since ⁇ is much smaller than 1, the refractive index in this region is very close to 1. Also, since k is a large value, the absorption rate is large. Therefore, a transmission / refraction type optical element such as a conventional lens cannot be used, and an optical system utilizing reflection is used. An outline of such an EUV exposure system is shown in Fig. 4.
- the EUV light 3 2 emitted from the EUV light source 3 1 enters the illumination optical system 3 3 and becomes a substantially parallel light beam through the concave reflecting mirror 3 4 that acts as a collimator mirror, and a pair of fly-eye mirrors 3 5 a And the incident force integrator 35 consisting of 3 and 5 b.
- the pair of fly-eye mirrors 3 5 a and 3 5 b for example, a fly-eye mirror disclosed in Japanese Patent Application Laid-Open No. 11-3 3 2 6 3 8 can be used. Since the detailed configuration and operation of the fly-eye mirror are described in detail in Japanese Patent Application Laid-Open No. 11-3 3 2 6 3 8, the description is omitted to simplify the description.
- a substantial surface light source having a predetermined shape is formed in the vicinity of the reflecting surface of the second fly-eye mirror 35 b, that is, in the vicinity of the exit surface of the optical integrator 35.
- Light from a substantial surface light source is deflected by a plane reflecting mirror 36 and then forms an elongated arc-shaped illumination area on the mask M (the aperture plate for forming the arc-shaped illumination area is not shown) Is omitted).
- the light from the illuminated mask M forms an image of the mask pattern on the wafer W via the projection optical system PL composed of a plurality of reflecting mirrors (in FIG. 4, for example, six reflecting mirrors M 1 to M 6).
- the mask M used in such an EUV exposure system is a reflective type.
- An example of such a mask structure is shown in FIG.
- a cabbing layer 3 having a thickness and a function of preventing oxidation is formed.
- an absorber 4 made of TaN having a pattern formed thereon is formed on the cabling layer 3.
- the part where the absorber 4 is cut and the cabling layer 3 (reflection film 2) is exposed is the part where the pattern is formed.
- a buffer layer 5 is provided between the cabling layer 3 and the absorber 4 to prevent the etching from reaching the lower layer when the absorber 4 is etched.
- the absorbent body 4 in the case of Ta N, which etch selectivity different Si_ ⁇ 2 is generally used.
- an intermediate layer is provided between the substrate 1 and the reflective film 2 to improve the adhesion between them, but the illustration is omitted.
- a conductive film 6 that is grounded to prevent the substrate 1 from being charged is formed on the back surface of the substrate 1.
- a reflective mask that can prevent charging of the mask surface, and thus can reduce the adhesion of foreign matter to the substrate surface, a method of manufacturing the same, and the reflective mask. It is an object to provide the used exposure apparatus.
- a first means for solving the above problems is a reflective mask used in an EUV exposure apparatus, which comprises a mask substrate, a multilayer film that reflects incident light, and an absorber for patterning incident light flux. And the surface of the absorber is covered with a conductive layer.
- the surface of the absorber is covered with a conductive layer, when this conductive layer is grounded when it is installed in an EUV exposure apparatus, charging of the mask surface can be prevented. it can.
- other layers visible on the mask surface such as a buffer layer, are insulators, it is preferable that other insulating layers visible on the mask surface are also covered with a conductive layer.
- the absorber pattern becomes an island shape, which makes it difficult to ground. Therefore, it is preferable that the entire surface of the mask is covered with the conductive layer.
- the potential of the conductive layer formed on the mask surface by bringing the ground electrode into contact with the conductive layer on the mask surface can be set to the ground potential.
- the conductive layer formed on the back surface of the mask and the conductive layer formed on the mask surface are electrically connected, and a ground electrode is brought into contact with the back surface or side surface of the mask for grounding.
- the ground electrode is in contact with the side surface of the mask rather than grounding from the back surface of the mask.
- the electrical connection between the front surface and the back surface of the mask can be achieved by forming a conductive film also on the side surface of the mask.
- a mask fall prevention mechanism may be installed.
- a part or the whole of the mask drop prevention mechanism may be composed of a conductive member, and the potential of the conductive layer formed on the mask surface through the mask drop prevention mechanism may be set to the ground potential.
- a second means for solving the above-mentioned problem is the first means, characterized in that the layer covering the outermost surface is Si having a thickness of 0.5 to lOOnm.
- Si is a material having good conductivity and easy to form a film.
- the film can be formed using the same film forming apparatus (for example, sputtering). Simplify the process.
- the reason why the film thickness is limited to 0.5 nm or more is that if the film thickness is made thinner than this, film breakage is likely to occur, and the film thickness is limited to less than lOOnm. This is because if the thickness is increased, the decrease in the amount of reflected light from the pattern cannot be ignored.
- the third means for solving the above-mentioned problem is the first means, characterized in that the layer covering the outermost surface is Ti, Ru, or Mo having a thickness of 0.5 to 100 nm. It is.
- the decrease in reflectivity of the reflective film can be reduced.
- these materials are preferable because they are conductive and have advantages such as easy film formation.
- the manufacturing process can be simplified because Mo can be used to form a film using the same film forming apparatus (for example, sputtering). The reason for limiting the film thickness is the same as the reason for limiting in the second means.
- a fourth means for solving the problem is any one of the first means to the third means, wherein the reflection mask has a surface opposite to a surface on which the absorber is formed.
- a conductive layer is further formed and formed on the surface of the absorber. The conductive layer formed is electrically connected to the conductive layer formed on the opposite side of the mask.
- the potential of the conductive layer on the mask surface can be set to the ground potential by a simple method.
- the potential from the back surface of the mask to the front surface of the mask can be set to the ground potential, and the configuration of the mask holding mechanism and the like is not complicated.
- a fifth means for solving the above problems is a reflective mask used in an EUV exposure apparatus, which comprises a mask substrate, a multilayer film that reflects incident light, and an absorber for patterning incident light flux And a conductive layer is further formed on the surface of the reflective mask opposite to the surface on which the absorber is formed, and the conductive layer and the absorber are electrically connected to each other.
- a sixth means for solving the above problem is the fourth means or the fifth means, wherein the electrical connection is made by a conductive thin film formed on a side surface of the reflective mask. It is characterized by that.
- the conductive layers on the front and back surfaces are electrically connected by the conductive thin film formed on the side surface of the reflective mask, stable electrical connection can be achieved compared to the connection by wiring or the like. be able to.
- dust is generated at the place where the ground electrode and conductive film are in contact. If the grounding point is the front and back surfaces, the generated dust will adhere to the pattern surface and disturb the pattern shape, or if it adheres to the electrostatic chuck surface and is chucked on the reticle stage, the reticle posture will be disturbed. Although the reticle may be deformed, the occurrence of such a problem can be reduced if the ground electrode is brought into contact with the conductive film formed on the side surface.
- a seventh means for solving the above problem is the sixth means, wherein the conductive thin film is formed only on a part of a side surface of the reflective mask. is there.
- the manufacturing is easy.
- An eighth means for solving the above problem is a reflective mask used in an EUV exposure apparatus, and has a reflective film formed by alternately stacking two kinds of substances on the surface of the substrate.
- a reflective mask manufacturing method characterized by having a process of forming a film by a small amount.
- the thickness of the caving layer forming the uppermost layer of the reflection film becomes the target value.
- a conductive material is deposited on the absorber, but even if this happens, the absorption characteristics of the absorber are hardly affected.
- the same material as the one of the multilayer films constituting the reflective layer for example, the Si layer when using an alternate layer of molybdenum (Mo) and silicon (Si) may be used as the coating layer.
- the top layer as a multilayer film is A ribden layer is formed, and a conductive silicon layer is formed thereon as a caving layer.
- a ninth means for solving the above-described problem is a method for manufacturing a reflective mask used in an EUV exposure apparatus, in which a reflective film is formed on the surface of a substrate and then a pattern is formed thereon. It is characterized in that it has a process of forming a conductor, and further forming a conductor having a cabbing function directly thereon.
- the caving layer formed on the surface of the reflective film for the purpose of preventing oxidation is a layer that also functions as a conductor. Therefore, the film thickness configuration is simplified, and the manufacturing process is simplified accordingly.
- An example of a conductor having an antioxidant function is Ru.
- the tenth means for solving the above-mentioned problem is the eighth means or the ninth means, and the line width of the pattern formed on the absorber is determined by the target line width of the absorber. It is characterized in that it is widened by twice the thickness of the conductive material deposited on it.
- the thickness of the conductive material formed on the absorber is thin, there is usually no problem, but a conductive material is also formed on the side surface of the absorber formed in a pattern.
- the thickness acting on the EUV light corresponds to the depth of the pattern, and it may absorb the considerable EUV light and produce the same effect as a narrowed pattern.
- the width of the pattern (the width of the groove formed in the absorber) is set to be larger than the target line width in advance. A pattern with a close line width is obtained.
- the first means for solving the above-mentioned problem is to transfer the pattern formed on the reflective mask onto the sensitive substrate using the reflective mask of any one of the first to seventh means.
- An exposure apparatus comprising: a surface of the absorber layer
- An exposure apparatus comprising a grounding means for electrically grounding a conductive layer formed on a surface.
- the first and second means for solving the above-mentioned problems are as follows: an exposure apparatus provided with a mask stage that adsorbs and holds the back surface of the reflective mask; and a conductive grounding means connected to the side surface of the reflective mask. It is an exposure apparatus characterized by having.
- the grounding can be taken from the side of the reflective mask, the generated dust adheres to the pattern surface or is attracted by the electrostatic chuck compared to the case where the front and back surfaces of the mask are used as the grounding point. Occasionally, problems such as disturbing the attitude of the reticle and deforming the reticle can be reduced.
- the side surface of the reflective mask referred to in the present invention is, for example, a plane (plane parallel to the x_y plane) on which the mask pattern shown in FIG. 2 is formed (parallel to the y-z plane).
- this surface does not have to be a vertical surface, and may be arranged obliquely.
- it may be a surface of another shape such as a spherical surface instead of a flat surface.
- it may be composed of a plurality of surfaces instead of only one surface.
- FIG. 1 is a diagram showing an outline of a reflective mask for an EUV exposure apparatus, which is an example of an embodiment of the present invention.
- FIG. 2 is a diagram showing an example in which the ground electrode provided on the mask stage is brought into contact with the side surface of the reflective mask.
- FIG. 3 is a diagram showing an example of a manufacturing method of the reflective mask according to the embodiment of the present invention.
- FIG. 4 is a diagram showing an outline of the EUV exposure apparatus.
- FIG. 5 is a diagram showing an example of a reflective mask for EUV exposure. BEST MODE FOR CARRYING OUT THE INVENTION
- FIG. 1 is a diagram showing an outline of a reflective mask for an EUV exposure apparatus, which is an example of an embodiment of the present invention.
- a reflective film 2 made of several tens of layers of thin films made of alternating layers of Si and Mo is formed, and its surface does not interfere with reflection.
- a thickness of the cabbing layer 3 having a function of preventing oxidation is formed.
- An absorber 4 made of TaN on which a pattern is formed is formed on the cabling layer 3.
- the part where the absorber 4 is cut and the cabling layer 3 (reflection film 2) is exposed is the part where the pattern is formed.
- a buffer layer 5 is provided between the cabling layer 3 and the absorber 4 to prevent the etching from reaching the lower layer when the absorber 4 is etched.
- SiO 2 having a different etching selectivity is generally used.
- an intermediate layer for improving the adhesion between the substrate 1 and the reflective film 2 is omitted.
- a conductive film 6 is formed on the back surface of the substrate 1 to be grounded to prevent the substrate 1 from being charged. This structure is the same as the conventional reflective mask shown in FIG.
- the conductive film 7 made of Si is formed so as to cover the surfaces of the substrate 1, the reflective film 2, the cabling layer 3, the absorber 4, and the buffer layer 5.
- the conductive film 7 covers the side surface of the substrate 1, and is thereby electrically connected to the conductive film 6, so that it is dropped to the ground level when installed in the EUV exposure apparatus.
- the conductive film has a thickness of 0.5 to 100 nm.
- Si is used as the conductive film 7.
- Ti, Ru, or Mo may be used as the conductive film 7, and the conductive film 7 has a thickness of less than lOOnm. Any material can be used as long as it is easy and the material does not decrease the reflectivity of the reflective film 2 to a problem.
- the conductive film also covers the surface of the substrate 1, the reflective film 2, the caving layer 3, and the buffer layer 5. However, if the patterning portion of the absorber 4 and the caving layer 3 is covered, That is enough.
- the pattern part of the reflective film 2 does not necessarily need to be covered, but it is better not to cover it.
- Force S Absorber 4 is cut at the pattern part and electrically connected to other absorber parts. If this is not the case (such as a donut pattern), it is necessary to ensure that there is conduction through this part.
- the conductive film 7 includes the sealing layer 3 and the conductive film 6. Any electrical connection is sufficient. Further, when the absorber 4 does not have an isolated portion such as a donut pattern, the conductive film 7 is sufficient if it electrically connects the absorber 4 and the conductive film 6.
- the conductive film 7 formed on the side surface of the reflective mask is connected to, for example, the ground provided on the mask stage. It is preferable to ground by bringing the electrodes into contact with each other. Of the conductive film 7, the one provided on the side of the reflective mask is simply for electrical connection between the front and back surfaces. Therefore, it is not necessary to provide it on the entire side surface.
- Figure 2 shows an example in which the ground electrode provided on the mask stage is in contact with the side of the reflective mask.
- the electrostatic chuck 8 of the mask stage is provided with an electrode 8a.
- a ground electrode 9 is provided on the side surface of the electrostatic chuck 8 to be grounded. When the reflective mask is chucked by the electrostatic chuck, the ground electrode 9 contacts the conductive film on the side surface of the reflective mask, thereby grounding the absorber 4 and the conductive film 6 of the reflective mask.
- the pattern width is 2 d wider than the initial pattern width, where d is the thickness of the conductive film 7.
- d is the thickness of the conductive film 7.
- the force S is not a problem by itself, and the side wall of the pattern (groove) part has a thickness that is only the pattern depth for the irradiated EUV light. The effect may not be negligible.
- the actual pattern line width is narrowed by forming the conductive film ⁇ ⁇ ⁇ by making the pattern line width originally formed 2 d wider than the target value. Can be prevented.
- Such a reflective mask can be easily manufactured by manufacturing a reflective mask by a conventional method and then forming a conductive film 7 on the surface thereof by sputtering or vapor deposition. At that time, if it is difficult to form the conductive film 7 on the side wall of the pattern, it is preferable to perform sputtering deposition from an oblique direction.
- FIG. 3 shows an example of a method for manufacturing a reflective mask according to an embodiment of the present invention.
- the reflective film 2 is manufactured by alternately laminating the Si thin film 21 and the Mo thin film 22 by sputtering on a substrate 1 made of low thermal expansion glass or the like by a conventionally known method. Caving made of Ru formed on it The layer 3a is formed to be thinner than the target thickness by the thickness of the conductive film to be formed later.
- a buffer layer 5 as Si0 2, TaN, as an absorber 4 by sputtering, respectively formed in this order, by applying a registry thereon, and exposed to a predetermined pattern by an exposure apparatus, developing the registry After that, the absorber 4 is etched using the remaining resist as a mask to form a predetermined pattern, and an intermediate product as shown in (a) is manufactured.
- Ru as a conductive film is formed on the surface by sputtering. Then, Ru as the conductive film and Ru of the above-mentioned cabling layer 3 a become an integrated Ru thin film 3 b, and the thickness becomes the design thickness for exhibiting the performance as the caving layer. . Since this Ru layer is formed so as to enclose the absorber 4 (b), it is possible to prevent the surface of the reflective mask from being charged by grounding this portion.
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
Claims
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2004-274591 | 2004-09-22 | ||
JP2004274591 | 2004-09-22 | ||
JP2005-146769 | 2005-05-19 | ||
JP2005146769 | 2005-05-19 |
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WO2006033442A1 true WO2006033442A1 (ja) | 2006-03-30 |
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PCT/JP2005/017662 WO2006033442A1 (ja) | 2004-09-22 | 2005-09-20 | 反射型マスク、反射型マスクの製造方法及び露光装置 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016207307A1 (de) | 2016-04-28 | 2017-11-02 | Carl Zeiss Smt Gmbh | Optisches Element und optische Anordnung damit |
EP3486721A1 (en) * | 2017-11-17 | 2019-05-22 | IMEC vzw | Mask for extreme-uv lithography and method for manufacturing the same |
CN111435217A (zh) * | 2019-01-14 | 2020-07-21 | 三星电子株式会社 | 光掩模、制造其的方法和使用其制造半导体器件的方法 |
WO2021085192A1 (ja) * | 2019-11-01 | 2021-05-06 | 凸版印刷株式会社 | 反射型マスク及び反射型マスクの製造方法 |
US20230032950A1 (en) * | 2021-07-30 | 2023-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Euv photo masks and manufacturing method thereof |
WO2024014207A1 (ja) * | 2022-07-14 | 2024-01-18 | Agc株式会社 | 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法 |
WO2024056552A1 (en) * | 2022-09-13 | 2024-03-21 | Asml Netherlands B.V. | A patterning device voltage biasing system for use in euv lithography |
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JPH08293450A (ja) * | 1995-04-24 | 1996-11-05 | Nikon Corp | X線反射型マスク |
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DE102016207307A1 (de) | 2016-04-28 | 2017-11-02 | Carl Zeiss Smt Gmbh | Optisches Element und optische Anordnung damit |
WO2017186439A1 (de) | 2016-04-28 | 2017-11-02 | Carl Zeiss Smt Gmbh | Optisches element und optische anordnung damit |
EP3486721A1 (en) * | 2017-11-17 | 2019-05-22 | IMEC vzw | Mask for extreme-uv lithography and method for manufacturing the same |
CN109799674A (zh) * | 2017-11-17 | 2019-05-24 | Imec 非营利协会 | 用于极uv光刻的掩模及其制造方法 |
US11092884B2 (en) | 2017-11-17 | 2021-08-17 | Imec Vzw | Mask for extreme-ultraviolet (extreme-UV) lithography and method for manufacturing the same |
CN111435217A (zh) * | 2019-01-14 | 2020-07-21 | 三星电子株式会社 | 光掩模、制造其的方法和使用其制造半导体器件的方法 |
CN111435217B (zh) * | 2019-01-14 | 2024-05-28 | 三星电子株式会社 | 光掩模、制造其的方法和使用其制造半导体器件的方法 |
WO2021085192A1 (ja) * | 2019-11-01 | 2021-05-06 | 凸版印刷株式会社 | 反射型マスク及び反射型マスクの製造方法 |
US20230032950A1 (en) * | 2021-07-30 | 2023-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Euv photo masks and manufacturing method thereof |
WO2024014207A1 (ja) * | 2022-07-14 | 2024-01-18 | Agc株式会社 | 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法 |
WO2024056552A1 (en) * | 2022-09-13 | 2024-03-21 | Asml Netherlands B.V. | A patterning device voltage biasing system for use in euv lithography |
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