JP3814359B2 - Ｘ線投影露光装置及びデバイス製造方法 - Google Patents

Ｘ線投影露光装置及びデバイス製造方法 Download PDF

Info

Publication number
JP3814359B2
JP3814359B2 JP3386997A JP3386997A JP3814359B2 JP 3814359 B2 JP3814359 B2 JP 3814359B2 JP 3386997 A JP3386997 A JP 3386997A JP 3386997 A JP3386997 A JP 3386997A JP 3814359 B2 JP3814359 B2 JP 3814359B2
Authority
JP
Japan
Prior art keywords
mask
exposure apparatus
projection exposure
chuck
ray projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3386997A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09306834A5 (enExample
JPH09306834A (ja
Inventor
真一 原
雅美 塚本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP3386997A priority Critical patent/JP3814359B2/ja
Priority to US08/813,349 priority patent/US6084938A/en
Publication of JPH09306834A publication Critical patent/JPH09306834A/ja
Priority to US09/342,897 priority patent/US6310934B1/en
Priority to US09/948,041 priority patent/US6668037B2/en
Priority to US10/092,280 priority patent/US6584168B2/en
Priority to US10/679,278 priority patent/US6836531B2/en
Publication of JPH09306834A5 publication Critical patent/JPH09306834A5/ja
Application granted granted Critical
Publication of JP3814359B2 publication Critical patent/JP3814359B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/10—Irradiation devices with provision for relative movement of beam source and object to be irradiated

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP3386997A 1996-03-12 1997-02-18 Ｘ線投影露光装置及びデバイス製造方法 Expired - Fee Related JP3814359B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP3386997A JP3814359B2 (ja) 1996-03-12 1997-02-18 Ｘ線投影露光装置及びデバイス製造方法
US08/813,349 US6084938A (en) 1996-03-12 1997-03-07 X-ray projection exposure apparatus and a device manufacturing method
US09/342,897 US6310934B1 (en) 1996-03-12 1999-06-29 X-ray projection exposure apparatus and a device manufacturing method
US09/948,041 US6668037B2 (en) 1996-03-12 2001-09-07 X-ray projection exposure apparatus and a device manufacturing method
US10/092,280 US6584168B2 (en) 1996-03-12 2002-03-07 X-ray projection exposure apparatus and a device manufacturing method
US10/679,278 US6836531B2 (en) 1996-03-12 2003-10-07 X-ray projection exposure apparatus and a device manufacturing method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8-54636 1996-03-12
JP5463696 1996-03-12
JP3386997A JP3814359B2 (ja) 1996-03-12 1997-02-18 Ｘ線投影露光装置及びデバイス製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005234194A Division JP3985003B2 (ja) 1996-03-12 2005-08-12 Ｘ線投影露光装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JPH09306834A JPH09306834A (ja) 1997-11-28
JPH09306834A5 JPH09306834A5 (enExample) 2005-06-16
JP3814359B2 true JP3814359B2 (ja) 2006-08-30

Family

ID=26372650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3386997A Expired - Fee Related JP3814359B2 (ja) 1996-03-12 1997-02-18 Ｘ線投影露光装置及びデバイス製造方法

Country Status (2)

Country Link
US (5) US6084938A (enExample)
JP (1) JP3814359B2 (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3814359B2 (ja) * 1996-03-12 2006-08-30 キヤノン株式会社 Ｘ線投影露光装置及びデバイス製造方法
JPH11307430A (ja) * 1998-04-23 1999-11-05 Canon Inc 露光装置およびデバイス製造方法ならびに駆動装置
EP1139176B1 (en) * 2000-03-24 2006-05-10 ASML Netherlands B.V. Lithographic apparatus and mask table
US6556281B1 (en) * 2000-05-23 2003-04-29 Asml Us, Inc. Flexible piezoelectric chuck and method of using the same
JP2002299228A (ja) * 2001-04-03 2002-10-11 Nikon Corp レチクル、それを用いた露光装置及び露光方法
DE60217587D1 (de) * 2001-07-26 2007-03-08 Canon Kk Substrathalter und ein Belichtungsapparat
US6798494B2 (en) * 2001-08-30 2004-09-28 Euv Llc Apparatus for generating partially coherent radiation
US6859263B2 (en) * 2001-08-30 2005-02-22 Euv Llc Apparatus for generating partially coherent radiation
JP2003110012A (ja) * 2001-09-28 2003-04-11 Nissin Electric Co Ltd 基板保持方法およびその装置
US6927887B2 (en) 2001-10-16 2005-08-09 Euv Llc Holographic illuminator for synchrotron-based projection lithography systems
SE524370C2 (sv) * 2002-05-10 2004-08-03 Tetra Laval Holdings & Finance Förpackningslaminat, bigvals, samt ett skikt för användning till ett förpackningslaminat
US7092231B2 (en) * 2002-08-23 2006-08-15 Asml Netherlands B.V. Chuck, lithographic apparatus and device manufacturing method
EP1391786B1 (en) * 2002-08-23 2010-10-06 ASML Netherlands B.V. Chuck, lithographic apparatus and device manufacturing method
JP2004273926A (ja) * 2003-03-11 2004-09-30 Canon Inc 露光装置
JP4307130B2 (ja) 2003-04-08 2009-08-05 キヤノン株式会社 露光装置
JP2005033179A (ja) 2003-06-18 2005-02-03 Canon Inc 露光装置及びデバイス製造方法
JP4565915B2 (ja) * 2003-07-23 2010-10-20 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ投影装置及び物品保持器
JP4464097B2 (ja) * 2003-09-29 2010-05-19 キヤノン株式会社 配線構造および露光装置
EP1530088B1 (en) * 2003-11-05 2007-08-08 ASML Netherlands B.V. Lithographic apparatus
EP2267535A1 (en) * 2003-11-05 2010-12-29 ASML Netherlands BV Lithographic apparatus and device manufacturing method
US7245357B2 (en) * 2003-12-15 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7489388B2 (en) * 2003-12-22 2009-02-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8749762B2 (en) * 2004-05-11 2014-06-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
GB2414858A (en) * 2004-06-03 2005-12-07 Nanobeam Ltd A workpiece or specimen support assembly for a charged particle beam system
US20050275841A1 (en) * 2004-06-09 2005-12-15 Asml Netherlands B.V. Alignment marker and lithographic apparatus and device manufacturing method using the same
WO2006033442A1 (ja) * 2004-09-22 2006-03-30 Nikon Corporation 反射型マスク、反射型マスクの製造方法及び露光装置
WO2006068461A1 (en) * 2004-12-23 2006-06-29 Asml Netherlands B.V. Support structure and lithographic apparatus
KR100722932B1 (ko) * 2005-09-26 2007-05-30 삼성전자주식회사 온도 감지 장치를 구비하는 정전척 및 이를 구비하는 노광장비 및 포토마스크 표면의 온도를 감지하는 방법
US8325321B2 (en) * 2006-07-28 2012-12-04 Mapper Lithography Ip B.V. Lithography system, method of heat dissipation and frame
US20080073596A1 (en) * 2006-08-24 2008-03-27 Asml Netherlands B.V. Lithographic apparatus and method
NL1036544A1 (nl) 2008-02-21 2009-08-24 Asml Netherlands Bv A lithographic apparatus having a chuck with a visco-elastic damping layer.
US8194384B2 (en) * 2008-07-23 2012-06-05 Tokyo Electron Limited High temperature electrostatic chuck and method of using
NL2003528A (en) * 2008-10-23 2010-04-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP5197505B2 (ja) * 2009-06-19 2013-05-15 東京エレクトロン株式会社 ウエハチャック用の温度センサ
WO2013050243A1 (en) * 2011-10-06 2013-04-11 Asml Netherlands B.V. Chuck, lithography apparatus and method of using a chuck
JP5883515B2 (ja) * 2012-02-06 2016-03-15 エーエスエムエル ネザーランズ ビー．ブイ． 対象物を保持するための支持構造を備えるリソグラフィ装置及びそれに用いられる支持構造
US9715175B2 (en) 2012-06-15 2017-07-25 Nikon Corporation Mask protection device, exposure apparatus, and method for manufacturing device
NL2012204A (en) * 2013-02-07 2014-12-18 Asml Holding Nv Lithographic apparatus and method.
JP6303346B2 (ja) * 2013-09-09 2018-04-04 凸版印刷株式会社 反射型マスクブランクおよび反射型マスク
US10644239B2 (en) 2014-11-17 2020-05-05 Emagin Corporation High precision, high resolution collimating shadow mask and method for fabricating a micro-display
US10248024B2 (en) * 2015-10-08 2019-04-02 Univ Paris Xiii Paris-Nord Villetaneuse Method for making a micro- or nano-scale patterned layer of material by photolithography
TWI721170B (zh) * 2016-05-24 2021-03-11 美商伊麥傑公司 蔽蔭遮罩沉積系統及其方法
KR102584518B1 (ko) * 2018-07-04 2023-10-05 삼성디스플레이 주식회사 정전척 유닛 및 그것을 이용한 박막 증착 장치
US10663871B2 (en) * 2018-07-30 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Reticle stage and method for using the same
WO2020094467A1 (en) * 2018-11-09 2020-05-14 Asml Holding N.V. Sensor array for real time detection of reticle position and forces
WO2020236518A1 (en) * 2019-05-22 2020-11-26 The Board Of Trustees Of The University Of Illinois Photoresist-free deposition and patterning with vacuum ultraviolet lamps
JP2025530065A (ja) * 2022-09-13 2025-09-11 エーエスエムエル ネザーランズ ビー．ブイ． Ｅｕｖリソグラフィに使用されるパターニングデバイス電圧バイアスシステム、リソグラフィ装置、およびリソグラフィ装置におけるパターニングデバイスのパターニング表面の汚染を低減する方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0252734B1 (en) * 1986-07-11 2000-05-03 Canon Kabushiki Kaisha X-ray reduction projection exposure system of reflection type
DE3856054T2 (de) * 1987-02-18 1998-03-19 Canon K.K., Tokio/Tokyo Reflexionsmaske
JPH01284793A (ja) * 1988-05-11 1989-11-16 Canon Inc 基板支持装置
JP2748127B2 (ja) * 1988-09-02 1998-05-06 キヤノン株式会社 ウエハ保持方法
EP0357423B1 (en) * 1988-09-02 1995-03-15 Canon Kabushiki Kaisha An exposure apparatus
JP2770960B2 (ja) * 1988-10-06 1998-07-02 キヤノン株式会社 Ｓｏｒ−ｘ線露光装置
US5003567A (en) * 1989-02-09 1991-03-26 Hawryluk Andrew M Soft x-ray reduction camera for submicron lithography
JP2731950B2 (ja) * 1989-07-13 1998-03-25 キヤノン株式会社 露光方法
JP2958913B2 (ja) * 1990-05-21 1999-10-06 キヤノン株式会社 Ｘ線露光装置
JP2928603B2 (ja) * 1990-07-30 1999-08-03 キヤノン株式会社 Ｘ線露光装置用ウエハ冷却装置
JP3207871B2 (ja) * 1991-07-09 2001-09-10 キヤノン株式会社 ウエハ支持装置
US5220171A (en) * 1990-11-01 1993-06-15 Canon Kabushiki Kaisha Wafer holding device in an exposure apparatus
US5222112A (en) * 1990-12-27 1993-06-22 Hitachi, Ltd. X-ray pattern masking by a reflective reduction projection optical system
DE69220868T2 (de) * 1991-09-07 1997-11-06 Canon K.K., Tokio/Tokyo System zur Stabilisierung der Formen von optischen Elementen, Belichtungsvorrichtung unter Verwendung dieses Systems und Verfahren zur Herstellung von Halbleitervorrichtungen
JP3224157B2 (ja) * 1992-03-31 2001-10-29 キヤノン株式会社 Ｘ線マスクとその製造方法、並びに該ｘ線マスクを用いたデバイス製造方法とｘ線露光装置
JP3173928B2 (ja) 1992-09-25 2001-06-04 キヤノン株式会社 基板保持装置、基板保持方法および露光装置
US5608773A (en) * 1993-11-30 1997-03-04 Canon Kabushiki Kaisha Mask holding device, and an exposure apparatus and a device manufacturing method using the device
JP3244894B2 (ja) * 1993-11-30 2002-01-07 キヤノン株式会社 マスク保持方法、マスク及びマスクチャック、ならびにこれを用いた露光装置とデバイス製造方法
US5593800A (en) * 1994-01-06 1997-01-14 Canon Kabushiki Kaisha Mask manufacturing method and apparatus and device manufacturing method using a mask manufactured by the method or apparatus
DE69505448T2 (de) 1994-03-15 1999-04-22 Canon K.K., Tokio/Tokyo Maske und Maskenträger
US6038279A (en) 1995-10-16 2000-03-14 Canon Kabushiki Kaisha X-ray generating device, and exposure apparatus and semiconductor device production method using the X-ray generating device
JP3243168B2 (ja) 1996-02-06 2002-01-07 キヤノン株式会社 原版保持装置およびこれを用いた露光装置
US5854819A (en) 1996-02-07 1998-12-29 Canon Kabushiki Kaisha Mask supporting device and correction method therefor, and exposure apparatus and device producing method utilizing the same
JP3416373B2 (ja) 1996-02-20 2003-06-16 キヤノン株式会社 反射型ｘ線マスク構造体、ｘ線露光装置、ｘ線露光方法ならびに該反射型ｘ線マスク構造体を用いて作製されるデバイス
JP3814359B2 (ja) 1996-03-12 2006-08-30 キヤノン株式会社 Ｘ線投影露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
US20020006180A1 (en) 2002-01-17
US6836531B2 (en) 2004-12-28
US6310934B1 (en) 2001-10-30
US20020101956A1 (en) 2002-08-01
US6084938A (en) 2000-07-04
JPH09306834A (ja) 1997-11-28
US6668037B2 (en) 2003-12-23
US20040071260A1 (en) 2004-04-15
US6584168B2 (en) 2003-06-24

Similar Documents

Publication Publication Date Title
JP3814359B2 (ja) Ｘ線投影露光装置及びデバイス製造方法
US7218383B2 (en) Holding system, exposure apparatus, and device manufacturing method
US7999919B2 (en) Substrate holding technique
EP1107066B1 (en) Lithographic apparatus with mask clamping apparatus
EP1549984B1 (en) Optical apparatus, exposure apparatus, and semiconductor device fabrication method
JP2001244177A (ja) ステージ装置とホルダ、および走査型露光装置並びに露光装置
JP2004031954A (ja) 収差補正システム、収差補正方法、変形レチクルチャック及びｅｕｖ露光装置
JP2002299228A (ja) レチクル、それを用いた露光装置及び露光方法
JP4262031B2 (ja) 露光装置及びデバイスの製造方法
JP6612439B2 (ja) 圧電装置を備える光学結像装置
US6404505B2 (en) Positioning stage system and position measuring method
JP4307130B2 (ja) 露光装置
US20050286202A1 (en) Electrostatic chuck, device manufacturing apparatus, and device manufacturing method
US6229871B1 (en) Projection lithography with distortion compensation using reticle chuck contouring
JP2004158610A (ja) 露光装置および露光方法
JP3985003B2 (ja) Ｘ線投影露光装置及びデバイス製造方法
TWI791238B (zh) 半導體處理系統與半導體處理方法
JP2009177126A (ja) マスクブランクス、マスク、マスク保持装置、露光装置及びデバイスの製造方法
JP2005116849A (ja) 静電吸着装置及び方法、露光装置、デバイスの製造方法
JPH07130647A (ja) マスク支持装置およびこれを用いた露光装置
KR100945707B1 (ko) 스테이지장치와 홀더, 및 주사형 노광장치 그리고 노광장치
JP2010147264A (ja) 物体保持装置、物体保持方法、露光方法、露光装置及び電子デバイスの製造方法
JP2009164284A (ja) パターン形成基板、露光方法およびデバイスの製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040916

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050610

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050615

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050812

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060517

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060605

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090609

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100609

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110609

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120609

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120609

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130609

Year of fee payment: 7

LAPS Cancellation because of no payment of annual fees