JPH09106064A - ハーフトーン位相反転マスクの製造方法 - Google Patents

ハーフトーン位相反転マスクの製造方法

Info

Publication number
JPH09106064A
JPH09106064A JP23641596A JP23641596A JPH09106064A JP H09106064 A JPH09106064 A JP H09106064A JP 23641596 A JP23641596 A JP 23641596A JP 23641596 A JP23641596 A JP 23641596A JP H09106064 A JPH09106064 A JP H09106064A
Authority
JP
Japan
Prior art keywords
shielding film
light
pattern
photoresist
shifter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23641596A
Other languages
English (en)
Japanese (ja)
Inventor
Seiyo Bun
文誠庸
Soiku Kei
桂宗郁
Seiki Kin
金聖起
Seishutsu Rin
林盛出
Jinkin Shin
申仁均
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH09106064A publication Critical patent/JPH09106064A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP23641596A 1995-09-13 1996-09-06 ハーフトーン位相反転マスクの製造方法 Pending JPH09106064A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR95-29842 1995-09-13
KR1019950029842A KR0170686B1 (ko) 1995-09-13 1995-09-13 하프톤 위상반전마스크의 제조방법

Publications (1)

Publication Number Publication Date
JPH09106064A true JPH09106064A (ja) 1997-04-22

Family

ID=19426669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23641596A Pending JPH09106064A (ja) 1995-09-13 1996-09-06 ハーフトーン位相反転マスクの製造方法

Country Status (4)

Country Link
US (1) US5741613A (enExample)
JP (1) JPH09106064A (enExample)
KR (1) KR0170686B1 (enExample)
TW (1) TW308650B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100607203B1 (ko) * 2005-01-05 2006-08-01 삼성전자주식회사 크롬리스 위상반전마스크의 제조방법
JP2008261958A (ja) * 2007-04-10 2008-10-30 Sk Electronics:Kk 多階調フォトマスク及びその製造方法
JP2010197799A (ja) * 2009-02-26 2010-09-09 Hoya Corp フォトマスクの製造方法及びパターン転写方法
JP2011215197A (ja) * 2010-03-31 2011-10-27 Hoya Corp フォトマスク及びその製造方法

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW497165B (en) * 1999-06-30 2002-08-01 Hitachi Ltd Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor
KR20010084643A (ko) * 2000-02-28 2001-09-06 박종섭 위상 반전 마스크(ｐｓｍ) 제조 방법
JP3760086B2 (ja) * 2000-07-07 2006-03-29 株式会社ルネサステクノロジ フォトマスクの製造方法
TW541605B (en) * 2000-07-07 2003-07-11 Hitachi Ltd Fabrication method of semiconductor integrated circuit device
TW519583B (en) * 2000-09-13 2003-02-01 Macronix Int Co Ltd Repair process of phase shifting mask
KR20020040236A (ko) * 2000-11-24 2002-05-30 박종섭 위상반전 마스크 및 그 제조방법
JP2002184669A (ja) 2000-12-14 2002-06-28 Hitachi Ltd 半導体集積回路装置の製造方法
KR100623922B1 (ko) * 2000-12-22 2006-09-13 주식회사 하이닉스반도체 위상반전마스크의 제조 방법
JP2002196470A (ja) 2000-12-26 2002-07-12 Hitachi Ltd フォトマスクの製造方法および半導体集積回路装置の製造方法
JP2002202585A (ja) 2000-12-27 2002-07-19 Hitachi Ltd フォトマスクの製造方法および半導体集積回路装置の製造方法
KR100393978B1 (ko) * 2001-02-05 2003-08-06 주식회사 하이닉스반도체 하프 톤형 위상 반전 마스크의 형성 방법
US6569581B2 (en) 2001-03-21 2003-05-27 International Business Machines Corporation Alternating phase shifting masks
US6803158B1 (en) 2001-03-27 2004-10-12 Dupont Photomasks, Inc. Photomask and method for forming an opaque border on the same
KR100393230B1 (ko) * 2001-08-16 2003-07-31 삼성전자주식회사 잔막율을 조절할 수 있는 포토레지스트 패턴의 형성방법
JP3827544B2 (ja) 2001-08-31 2006-09-27 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2003121977A (ja) * 2001-10-12 2003-04-23 Hitachi Ltd 半導体集積回路装置の製造方法およびマスク
US6673498B1 (en) * 2001-11-02 2004-01-06 Lsi Logic Corporation Method for reticle formation utilizing metal vaporization
JP2003173014A (ja) * 2001-12-07 2003-06-20 Mitsubishi Electric Corp 位相シフトマスクの製造方法、位相シフトマスク、および、装置
KR100790564B1 (ko) * 2001-12-17 2008-01-02 주식회사 하이닉스반도체 위상반전 마스크 제작방법
KR100417007B1 (ko) * 2001-12-27 2004-02-05 주식회사 피케이엘 위상반전마스크 제조방법
JP2003287875A (ja) * 2002-01-24 2003-10-10 Hitachi Ltd マスクの製造方法および半導体集積回路装置の製造方法
JP3754378B2 (ja) * 2002-02-14 2006-03-08 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
CN100362628C (zh) * 2003-09-28 2008-01-16 中芯国际集成电路制造(上海)有限公司 外缘型态相移光罩的自对准方法
US7276316B2 (en) * 2004-02-02 2007-10-02 International Business Machines Corporation Common second level frame exposure methods for making embedded attenuated phase shift masks
US7442472B2 (en) * 2004-08-10 2008-10-28 Micron Technology, Inc. Methods of forming reticles
CN101122736A (zh) * 2006-07-06 2008-02-13 Asml蒙片工具有限公司 一种改进的cpl掩模及产生cpl掩模的方法和程序产品
KR20100109771A (ko) * 2009-04-01 2010-10-11 삼성전자주식회사 림 영역을 가진 투과율 조절형 위상 반전 포토마스크 및 그 제조 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0131192B1 (en) * 1992-04-22 1998-04-14 Toshiba Corp Exposed mask, fabrication method of exposed mask substrate and patterning method based on exposed mask
US5536604A (en) * 1992-07-17 1996-07-16 Kabushiki Kaisha Toshiba Exposure mask
JP3064769B2 (ja) * 1992-11-21 2000-07-12 アルバック成膜株式会社 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法
KR970009825B1 (ko) * 1993-12-31 1997-06-18 현대전자산업 주식회사 하프톤형 위상반전 마스크 및 그 제조 방법
KR970009822B1 (ko) * 1994-02-03 1997-06-18 현대전자산업 주식회사 하프톤형 위상반전 마스크 및 그 제조방법
JPH07240364A (ja) * 1994-03-02 1995-09-12 Canon Inc 反射型マスク、その製造方法及び該マスクを用いた露光装置
US5478679A (en) * 1994-11-23 1995-12-26 United Microelectronics Corporation Half-tone self-aligning phase shifting mask
JP3397933B2 (ja) * 1995-03-24 2003-04-21 アルバック成膜株式会社 位相シフトフォトマスクブランクス、位相シフトフォトマスク、及びそれらの製造方法。

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100607203B1 (ko) * 2005-01-05 2006-08-01 삼성전자주식회사 크롬리스 위상반전마스크의 제조방법
JP2008261958A (ja) * 2007-04-10 2008-10-30 Sk Electronics:Kk 多階調フォトマスク及びその製造方法
JP2010197799A (ja) * 2009-02-26 2010-09-09 Hoya Corp フォトマスクの製造方法及びパターン転写方法
JP2011215197A (ja) * 2010-03-31 2011-10-27 Hoya Corp フォトマスク及びその製造方法

Also Published As

Publication number Publication date
KR0170686B1 (ko) 1999-03-20
US5741613A (en) 1998-04-21
KR970016774A (ko) 1997-04-28
TW308650B (enExample) 1997-06-21

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