CN100362628C - 外缘型态相移光罩的自对准方法 - Google Patents
外缘型态相移光罩的自对准方法 Download PDFInfo
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- CN100362628C CN100362628C CNB031512836A CN03151283A CN100362628C CN 100362628 C CN100362628 C CN 100362628C CN B031512836 A CNB031512836 A CN B031512836A CN 03151283 A CN03151283 A CN 03151283A CN 100362628 C CN100362628 C CN 100362628C
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- photoresistance
- chromium layer
- etching
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- pattern
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB031512836A CN100362628C (zh) | 2003-09-28 | 2003-09-28 | 外缘型态相移光罩的自对准方法 |
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CNB031512836A CN100362628C (zh) | 2003-09-28 | 2003-09-28 | 外缘型态相移光罩的自对准方法 |
Publications (2)
Publication Number | Publication Date |
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CN1601387A CN1601387A (zh) | 2005-03-30 |
CN100362628C true CN100362628C (zh) | 2008-01-16 |
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CNB031512836A Expired - Fee Related CN100362628C (zh) | 2003-09-28 | 2003-09-28 | 外缘型态相移光罩的自对准方法 |
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CN (1) | CN100362628C (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100383932C (zh) * | 2005-07-05 | 2008-04-23 | 华中科技大学 | 一种硅湿法刻蚀工艺 |
CN101054673B (zh) * | 2006-04-14 | 2014-04-30 | 应用材料公司 | 利用保护性罩幕的光罩等离子体蚀刻法 |
CN104078330B (zh) * | 2013-03-28 | 2018-03-06 | 中芯国际集成电路制造(上海)有限公司 | 自对准三重图形的形成方法 |
CN108345171B (zh) * | 2018-02-11 | 2020-01-21 | 京东方科技集团股份有限公司 | 一种相移掩膜板的制作方法及相移掩膜板 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1111292A (zh) * | 1993-12-31 | 1995-11-08 | 现代电子产业株式会社 | 制造半色调式相移掩模的方法 |
CN1115408A (zh) * | 1993-12-31 | 1996-01-24 | 现代电子产业株式会社 | 半色调式相移掩模及其制备方法 |
US5741613A (en) * | 1995-09-13 | 1998-04-21 | Samsung Electronics Co., Ltd. | Methods of forming half-tone phase-shift masks with reduced susceptiblity to parasitic sputtering |
JPH11295874A (ja) * | 1998-04-15 | 1999-10-29 | Oki Electric Ind Co Ltd | 位相シフトマスクの製造方法 |
JP2000232091A (ja) * | 1999-02-10 | 2000-08-22 | Semiconductor Leading Edge Technologies Inc | マスク製造方法及びパターン形成方法 |
CN1337600A (zh) * | 2001-09-13 | 2002-02-27 | 信息产业部电子第十三研究所 | 用一次光刻产生t形栅的移相掩模光刻方法 |
-
2003
- 2003-09-28 CN CNB031512836A patent/CN100362628C/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1111292A (zh) * | 1993-12-31 | 1995-11-08 | 现代电子产业株式会社 | 制造半色调式相移掩模的方法 |
CN1115408A (zh) * | 1993-12-31 | 1996-01-24 | 现代电子产业株式会社 | 半色调式相移掩模及其制备方法 |
US5741613A (en) * | 1995-09-13 | 1998-04-21 | Samsung Electronics Co., Ltd. | Methods of forming half-tone phase-shift masks with reduced susceptiblity to parasitic sputtering |
JPH11295874A (ja) * | 1998-04-15 | 1999-10-29 | Oki Electric Ind Co Ltd | 位相シフトマスクの製造方法 |
JP2000232091A (ja) * | 1999-02-10 | 2000-08-22 | Semiconductor Leading Edge Technologies Inc | マスク製造方法及びパターン形成方法 |
CN1337600A (zh) * | 2001-09-13 | 2002-02-27 | 信息产业部电子第十三研究所 | 用一次光刻产生t形栅的移相掩模光刻方法 |
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Publication number | Publication date |
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CN1601387A (zh) | 2005-03-30 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111205 |
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Effective date of registration: 20111205 Address after: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Granted publication date: 20080116 Termination date: 20190928 |
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CF01 | Termination of patent right due to non-payment of annual fee |