JPH08306923A - 半導体素子のトランジスター製造方法 - Google Patents
半導体素子のトランジスター製造方法Info
- Publication number
- JPH08306923A JPH08306923A JP8113675A JP11367596A JPH08306923A JP H08306923 A JPH08306923 A JP H08306923A JP 8113675 A JP8113675 A JP 8113675A JP 11367596 A JP11367596 A JP 11367596A JP H08306923 A JPH08306923 A JP H08306923A
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- impurity ions
- transistor
- source
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 239000012535 impurity Substances 0.000 claims abstract description 58
- 150000002500 ions Chemical class 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 125000006850 spacer group Chemical group 0.000 claims abstract description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 12
- -1 LDD ions Chemical class 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 238000005468 ion implantation Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 5
- 229920005591 polysilicon Polymers 0.000 abstract description 5
- 230000005465 channeling Effects 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66492—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a pocket or a lightly doped drain selectively formed at the side of the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR95-11225 | 1995-05-09 | ||
| KR1019950011225A KR0146525B1 (ko) | 1995-05-09 | 1995-05-09 | 반도체 소자의 트랜지스터 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08306923A true JPH08306923A (ja) | 1996-11-22 |
Family
ID=19413930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8113675A Pending JPH08306923A (ja) | 1995-05-09 | 1996-05-08 | 半導体素子のトランジスター製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH08306923A (ko) |
| KR (1) | KR0146525B1 (ko) |
| CN (1) | CN1050691C (ko) |
| TW (1) | TW371783B (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6667216B2 (en) | 1999-05-14 | 2003-12-23 | Matsushita Electronics Corporation | Semiconductor device and method of fabricating the same |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100429873B1 (ko) * | 2001-07-19 | 2004-05-04 | 삼성전자주식회사 | 모스 트랜지스터 및 그 형성방법 |
| EP1524684B1 (en) * | 2003-10-17 | 2010-01-13 | Imec | Method for providing a semiconductor substrate with a layer structure of activated dopants |
| CN102148245B (zh) * | 2010-02-10 | 2016-09-28 | 上海华虹宏力半导体制造有限公司 | 本征mos晶体管及其形成方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63155720A (ja) * | 1986-12-19 | 1988-06-28 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製造方法 |
| JPH04158529A (ja) * | 1990-10-23 | 1992-06-01 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
| JPH05136404A (ja) * | 1991-04-22 | 1993-06-01 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06302824A (ja) * | 1993-02-16 | 1994-10-28 | Sanyo Electric Co Ltd | 薄膜トランジスタおよびその製造方法 |
-
1995
- 1995-05-09 KR KR1019950011225A patent/KR0146525B1/ko not_active IP Right Cessation
-
1996
- 1996-05-08 TW TW085105472A patent/TW371783B/zh active
- 1996-05-08 JP JP8113675A patent/JPH08306923A/ja active Pending
- 1996-05-09 CN CN96110002A patent/CN1050691C/zh not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63155720A (ja) * | 1986-12-19 | 1988-06-28 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製造方法 |
| JPH04158529A (ja) * | 1990-10-23 | 1992-06-01 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
| JPH05136404A (ja) * | 1991-04-22 | 1993-06-01 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6667216B2 (en) | 1999-05-14 | 2003-12-23 | Matsushita Electronics Corporation | Semiconductor device and method of fabricating the same |
| US6921933B2 (en) | 1999-05-14 | 2005-07-26 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR0146525B1 (ko) | 1998-11-02 |
| KR960043050A (ko) | 1996-12-21 |
| CN1050691C (zh) | 2000-03-22 |
| CN1146627A (zh) | 1997-04-02 |
| TW371783B (en) | 1999-10-11 |
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