CN1050691C - 制造半导体器件的晶体管的方法 - Google Patents

制造半导体器件的晶体管的方法 Download PDF

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Publication number
CN1050691C
CN1050691C CN96110002A CN96110002A CN1050691C CN 1050691 C CN1050691 C CN 1050691C CN 96110002 A CN96110002 A CN 96110002A CN 96110002 A CN96110002 A CN 96110002A CN 1050691 C CN1050691 C CN 1050691C
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CN
China
Prior art keywords
foreign ion
ion
making
source
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN96110002A
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English (en)
Chinese (zh)
Other versions
CN1146627A (zh
Inventor
朴莹泽
吴荣均
金义式
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of CN1146627A publication Critical patent/CN1146627A/zh
Application granted granted Critical
Publication of CN1050691C publication Critical patent/CN1050691C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66492—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a pocket or a lightly doped drain selectively formed at the side of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN96110002A 1995-05-09 1996-05-09 制造半导体器件的晶体管的方法 Expired - Fee Related CN1050691C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR11225/95 1995-05-09
KR1019950011225A KR0146525B1 (ko) 1995-05-09 1995-05-09 반도체 소자의 트랜지스터 제조방법

Publications (2)

Publication Number Publication Date
CN1146627A CN1146627A (zh) 1997-04-02
CN1050691C true CN1050691C (zh) 2000-03-22

Family

ID=19413930

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96110002A Expired - Fee Related CN1050691C (zh) 1995-05-09 1996-05-09 制造半导体器件的晶体管的方法

Country Status (4)

Country Link
JP (1) JPH08306923A (ko)
KR (1) KR0146525B1 (ko)
CN (1) CN1050691C (ko)
TW (1) TW371783B (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333217B1 (en) 1999-05-14 2001-12-25 Matsushita Electric Industrial Co., Ltd. Method of forming MOSFET with channel, extension and pocket implants
KR100429873B1 (ko) * 2001-07-19 2004-05-04 삼성전자주식회사 모스 트랜지스터 및 그 형성방법
EP1524684B1 (en) * 2003-10-17 2010-01-13 Imec Method for providing a semiconductor substrate with a layer structure of activated dopants
CN102148245B (zh) * 2010-02-10 2016-09-28 上海华虹宏力半导体制造有限公司 本征mos晶体管及其形成方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06302824A (ja) * 1993-02-16 1994-10-28 Sanyo Electric Co Ltd 薄膜トランジスタおよびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0795535B2 (ja) * 1986-12-19 1995-10-11 日本電信電話株式会社 半導体装置の製造方法
JPH04158529A (ja) * 1990-10-23 1992-06-01 Oki Electric Ind Co Ltd 半導体素子の製造方法
JP2683979B2 (ja) * 1991-04-22 1997-12-03 三菱電機株式会社 半導体装置およびその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06302824A (ja) * 1993-02-16 1994-10-28 Sanyo Electric Co Ltd 薄膜トランジスタおよびその製造方法

Also Published As

Publication number Publication date
KR0146525B1 (ko) 1998-11-02
KR960043050A (ko) 1996-12-21
CN1146627A (zh) 1997-04-02
JPH08306923A (ja) 1996-11-22
TW371783B (en) 1999-10-11

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20000322

Termination date: 20100509