JPH08306678A - 半導体装置の製造方法及び半導体装置 - Google Patents
半導体装置の製造方法及び半導体装置Info
- Publication number
- JPH08306678A JPH08306678A JP7109585A JP10958595A JPH08306678A JP H08306678 A JPH08306678 A JP H08306678A JP 7109585 A JP7109585 A JP 7109585A JP 10958595 A JP10958595 A JP 10958595A JP H08306678 A JPH08306678 A JP H08306678A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- silicon
- silicon substrate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H10W10/012—
-
- H10P14/60—
-
- H10W10/13—
Landscapes
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7109585A JPH08306678A (ja) | 1995-05-08 | 1995-05-08 | 半導体装置の製造方法及び半導体装置 |
| TW085105149A TW326099B (en) | 1995-05-08 | 1996-04-30 | Semiconductor device and the process of manufacturing the same |
| PCT/JP1996/001193 WO1996036073A1 (fr) | 1995-05-08 | 1996-05-01 | Dispositif a semi-conducteur et sa fabrication |
| KR1019970707841A KR19990008315A (ko) | 1995-05-08 | 1996-05-01 | 반도체장치 및 그 제조방법 |
| MYPI96001700A MY132186A (en) | 1995-05-08 | 1996-05-06 | Semiconductor device and process for producing the same. |
| IN824CA1996 IN187708B (cg-RX-API-DMAC10.html) | 1995-05-08 | 1996-05-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7109585A JPH08306678A (ja) | 1995-05-08 | 1995-05-08 | 半導体装置の製造方法及び半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08306678A true JPH08306678A (ja) | 1996-11-22 |
Family
ID=14514002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7109585A Pending JPH08306678A (ja) | 1995-05-08 | 1995-05-08 | 半導体装置の製造方法及び半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH08306678A (cg-RX-API-DMAC10.html) |
| KR (1) | KR19990008315A (cg-RX-API-DMAC10.html) |
| IN (1) | IN187708B (cg-RX-API-DMAC10.html) |
| MY (1) | MY132186A (cg-RX-API-DMAC10.html) |
| TW (1) | TW326099B (cg-RX-API-DMAC10.html) |
| WO (1) | WO1996036073A1 (cg-RX-API-DMAC10.html) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51139263A (en) * | 1975-05-28 | 1976-12-01 | Hitachi Ltd | Method of selective oxidation of silicon substrate |
| JPS5249771A (en) * | 1975-10-17 | 1977-04-21 | Matsushita Electric Ind Co Ltd | Process for production of semiconductor device |
| JPS5739551A (en) * | 1980-08-21 | 1982-03-04 | Seiko Epson Corp | Manufacture of selectively oxidized mask |
| JPH0628282B2 (ja) * | 1984-09-19 | 1994-04-13 | ソニー株式会社 | 半導体装置の製造方法 |
| JP3403210B2 (ja) * | 1992-02-14 | 2003-05-06 | 富士通株式会社 | 半導体装置の製造方法 |
-
1995
- 1995-05-08 JP JP7109585A patent/JPH08306678A/ja active Pending
-
1996
- 1996-04-30 TW TW085105149A patent/TW326099B/zh active
- 1996-05-01 KR KR1019970707841A patent/KR19990008315A/ko not_active Ceased
- 1996-05-01 WO PCT/JP1996/001193 patent/WO1996036073A1/ja not_active Ceased
- 1996-05-06 IN IN824CA1996 patent/IN187708B/en unknown
- 1996-05-06 MY MYPI96001700A patent/MY132186A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO1996036073A1 (fr) | 1996-11-14 |
| IN187708B (cg-RX-API-DMAC10.html) | 2002-06-08 |
| KR19990008315A (ko) | 1999-01-25 |
| MY132186A (en) | 2007-09-28 |
| TW326099B (en) | 1998-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20041116 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20050315 |