MY132186A - Semiconductor device and process for producing the same. - Google Patents

Semiconductor device and process for producing the same.

Info

Publication number
MY132186A
MY132186A MYPI96001700A MYPI9601700A MY132186A MY 132186 A MY132186 A MY 132186A MY PI96001700 A MYPI96001700 A MY PI96001700A MY PI9601700 A MYPI9601700 A MY PI9601700A MY 132186 A MY132186 A MY 132186A
Authority
MY
Malaysia
Prior art keywords
silicon substrate
oxide
predetermined areas
forming
oxide film
Prior art date
Application number
MYPI96001700A
Inventor
Hideo Miura
Shuji Ikeda
Norio Suzuki
Naoto Saito
Asao Nishimura
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of MY132186A publication Critical patent/MY132186A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

WHEN ELEMENT ISOLATION OXIDE FILMS (2) ARE FORMED BY FORMING AT LEAST ONE THIN FILM ON A SILICON SUBSTRATE (1), FORMING OPENINGS (20) BY EXPOSING PREDETERMINED AREAS AND THE REMAINDER BEING NON-OPENING PORTIONS, FORMING OXIDE FILMS (2) ON PORTIONS CORRESPONDING TO THE PREDETERMINED AREAS BY SELECTIVE OXIDATION OF THE SILICON SUBSTRATE (1) VIA THE OPENINGS (20), REMOVING THIN FILM(S) EXCEPT FOR THE OXIDE FILM (2) TO EXPOSE AT LEAST THE OXIDE FILM AMONG THE OXIDE FILM (2) AND SILICON SUBSTRATE (1), CONDUCTING ADDITIONAL OXIDATION ON THE WHOLE EXPOSED SURFACE, AND REMOVING UNNECESSARY PORTIONS OF OXIDE FROM AROUND THE PREDETERMINED AREAS, THE SILICON SUBSTRATE (1) SURFACE UNDER THE NON-OPENING PORTIONS BECOMES SUBSTANTIALLY FLAT AND IS SUITABLE FOR PRODUCING SEMICONDUCTOR DEVICES IMPROVED IN INTEGRATION AND RELIABILITY.(FIG. 2)
MYPI96001700A 1995-05-08 1996-05-06 Semiconductor device and process for producing the same. MY132186A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7109585A JPH08306678A (en) 1995-05-08 1995-05-08 Manufacture of semiconductor device and semiconductor device

Publications (1)

Publication Number Publication Date
MY132186A true MY132186A (en) 2007-09-28

Family

ID=14514002

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI96001700A MY132186A (en) 1995-05-08 1996-05-06 Semiconductor device and process for producing the same.

Country Status (6)

Country Link
JP (1) JPH08306678A (en)
KR (1) KR19990008315A (en)
IN (1) IN187708B (en)
MY (1) MY132186A (en)
TW (1) TW326099B (en)
WO (1) WO1996036073A1 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51139263A (en) * 1975-05-28 1976-12-01 Hitachi Ltd Method of selective oxidation of silicon substrate
JPS5249771A (en) * 1975-10-17 1977-04-21 Matsushita Electric Ind Co Ltd Process for production of semiconductor device
JPS5739551A (en) * 1980-08-21 1982-03-04 Seiko Epson Corp Manufacture of selectively oxidized mask
JPH0628282B2 (en) * 1984-09-19 1994-04-13 ソニー株式会社 Method for manufacturing semiconductor device
JP3403210B2 (en) * 1992-02-14 2003-05-06 富士通株式会社 Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
IN187708B (en) 2002-06-08
KR19990008315A (en) 1999-01-25
JPH08306678A (en) 1996-11-22
WO1996036073A1 (en) 1996-11-14
TW326099B (en) 1998-02-01

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