JPH0760839B2 - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPH0760839B2 JPH0760839B2 JP2062789A JP6278990A JPH0760839B2 JP H0760839 B2 JPH0760839 B2 JP H0760839B2 JP 2062789 A JP2062789 A JP 2062789A JP 6278990 A JP6278990 A JP 6278990A JP H0760839 B2 JPH0760839 B2 JP H0760839B2
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- power
- wire
- pad
- signal processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H10W72/00—
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- H10W70/481—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45164—Palladium (Pd) as principal constituent
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- H10W72/07533—
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- H10W72/07552—
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- H10W72/07553—
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- H10W72/07555—
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- H10W72/527—
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- H10W72/5363—
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- H10W72/537—
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- H10W72/5449—
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- H10W72/5473—
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- H10W72/5475—
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- H10W72/552—
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- H10W72/5522—
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- H10W72/5524—
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- H10W72/5525—
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- H10W72/557—
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- H10W72/59—
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- H10W72/926—
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- H10W72/932—
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- H10W72/952—
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- H10W90/756—
Landscapes
- Wire Bonding (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2062789A JPH0760839B2 (ja) | 1990-03-15 | 1990-03-15 | 半導体装置 |
| US07/668,024 US5173762A (en) | 1990-03-15 | 1991-03-12 | Semiconductor device using bonding wires of different materials |
| KR1019910004027A KR910017604A (ko) | 1990-03-15 | 1991-03-14 | 반도체장치 |
| EP91104006A EP0446937B1 (en) | 1990-03-15 | 1991-03-15 | Method of manufacturing a semiconductor device using bonding wires of different material |
| DE69119946T DE69119946T2 (de) | 1990-03-15 | 1991-03-15 | Verfahren zur Herstellung einer Halbleitervorrichtung mit Lotanschlussdrähten aus unterschiedlichen Materialien |
| KR2019950021529U KR960000464Y1 (ko) | 1990-03-15 | 1995-08-21 | 반도체장치(a semiconductor device) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2062789A JPH0760839B2 (ja) | 1990-03-15 | 1990-03-15 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03265149A JPH03265149A (ja) | 1991-11-26 |
| JPH0760839B2 true JPH0760839B2 (ja) | 1995-06-28 |
Family
ID=13210467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2062789A Expired - Lifetime JPH0760839B2 (ja) | 1990-03-15 | 1990-03-15 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5173762A (OSRAM) |
| EP (1) | EP0446937B1 (OSRAM) |
| JP (1) | JPH0760839B2 (OSRAM) |
| KR (2) | KR910017604A (OSRAM) |
| DE (1) | DE69119946T2 (OSRAM) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3459291B2 (ja) * | 1993-09-21 | 2003-10-20 | ローム株式会社 | 半導体チップを備えた電子部品 |
| US5644281A (en) * | 1992-04-07 | 1997-07-01 | Rohm Co., Ltd. | Electronic component incorporating solder fuse wire |
| JPH06216307A (ja) * | 1993-01-13 | 1994-08-05 | Mitsubishi Electric Corp | 樹脂封止型半導体装置 |
| JP2807396B2 (ja) * | 1993-05-25 | 1998-10-08 | ローム株式会社 | 半導体装置 |
| US5530284A (en) * | 1995-03-06 | 1996-06-25 | Motorola, Inc. | Semiconductor leadframe structure compatible with differing bond wire materials |
| WO1998021751A2 (de) * | 1996-11-11 | 1998-05-22 | Siemens Aktiengesellschaft | Optimierung der leistungsverbindung zwischen chip und leiterrahmen für leistungsschalter |
| DE29924183U1 (de) | 1998-05-05 | 2002-03-28 | International Rectifier Corp., El Segundo, Calif. | Gehäuse und Leitungsrahmen für ein Halbleiterbauelement hoher Stromleitfähigkeit, mit großflächigen Verbindungsschlüssen und veränderter Form |
| US6476481B2 (en) | 1998-05-05 | 2002-11-05 | International Rectifier Corporation | High current capacity semiconductor device package and lead frame with large area connection posts and modified outline |
| CN1937223A (zh) * | 2002-02-21 | 2007-03-28 | 松下电器产业株式会社 | 半导体装置 |
| TW586203B (en) * | 2002-11-04 | 2004-05-01 | Siliconware Precision Industries Co Ltd | Semiconductor package with lead frame as chip carrier and method for fabricating the same |
| JP2004281887A (ja) * | 2003-03-18 | 2004-10-07 | Himeji Toshiba Ep Corp | リードフレーム及びそれを用いた電子部品 |
| DE102005016830A1 (de) * | 2004-04-14 | 2005-11-03 | Denso Corp., Kariya | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
| US8125060B2 (en) * | 2006-12-08 | 2012-02-28 | Infineon Technologies Ag | Electronic component with layered frame |
| JP4830877B2 (ja) * | 2007-01-31 | 2011-12-07 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
| US8237268B2 (en) | 2007-03-20 | 2012-08-07 | Infineon Technologies Ag | Module comprising a semiconductor chip |
| JP5192163B2 (ja) * | 2007-03-23 | 2013-05-08 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
| US8546904B2 (en) * | 2011-07-11 | 2013-10-01 | Transcend Information, Inc. | Integrated circuit with temperature increasing element and electronic system having the same |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5716375Y2 (OSRAM) * | 1975-04-02 | 1982-04-06 | ||
| GB1478393A (en) * | 1975-08-12 | 1977-06-29 | Ferranti Ltd | Methods of manufacturing semiconductor devices |
| JPS5821351A (ja) * | 1981-07-30 | 1983-02-08 | Toshiba Corp | 半導体装置 |
| US4845543A (en) * | 1983-09-28 | 1989-07-04 | Hitachi, Ltd. | Semiconductor device and method of manufacturing the same |
| JPS6396947A (ja) * | 1986-10-13 | 1988-04-27 | Mitsubishi Electric Corp | 半導体装置用リ−ドフレ−ム |
| EP0288776A3 (en) * | 1987-04-28 | 1989-03-22 | Texas Instruments Incorporated | Gold alloy wire connection to copper doped aluminum semiconductor circuit interconnection bonding pad |
| JPS6459947A (en) * | 1987-08-31 | 1989-03-07 | Toshiba Corp | Semiconductor device |
| US5070041A (en) * | 1988-08-12 | 1991-12-03 | Mitsui Petrochemical Industries, Ltd. | Method of removing flash from a semiconductor leadframe using coated leadframe and solvent |
| IT1233008B (it) * | 1989-09-21 | 1992-03-14 | Sgs Thomson Microelectronics | Dispositivo integrato con connessioni perfezionate fra i terminali e la piastrina di materiale semiconduttore integrante componenti elettronici |
| JPH03157448A (ja) * | 1989-11-15 | 1991-07-05 | Mitsubishi Electric Corp | 半導体封止用エポキシ樹脂組成物 |
-
1990
- 1990-03-15 JP JP2062789A patent/JPH0760839B2/ja not_active Expired - Lifetime
-
1991
- 1991-03-12 US US07/668,024 patent/US5173762A/en not_active Expired - Lifetime
- 1991-03-14 KR KR1019910004027A patent/KR910017604A/ko not_active Withdrawn
- 1991-03-15 DE DE69119946T patent/DE69119946T2/de not_active Expired - Lifetime
- 1991-03-15 EP EP91104006A patent/EP0446937B1/en not_active Expired - Lifetime
-
1995
- 1995-08-21 KR KR2019950021529U patent/KR960000464Y1/ko not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0446937A2 (en) | 1991-09-18 |
| US5173762A (en) | 1992-12-22 |
| KR910017604A (ko) | 1991-11-05 |
| KR960000464Y1 (ko) | 1996-01-10 |
| DE69119946D1 (de) | 1996-07-11 |
| EP0446937A3 (OSRAM) | 1994-02-02 |
| EP0446937B1 (en) | 1996-06-05 |
| JPH03265149A (ja) | 1991-11-26 |
| DE69119946T2 (de) | 1996-11-28 |
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