JPH03157448A - 半導体封止用エポキシ樹脂組成物 - Google Patents

半導体封止用エポキシ樹脂組成物

Info

Publication number
JPH03157448A
JPH03157448A JP1297934A JP29793489A JPH03157448A JP H03157448 A JPH03157448 A JP H03157448A JP 1297934 A JP1297934 A JP 1297934A JP 29793489 A JP29793489 A JP 29793489A JP H03157448 A JPH03157448 A JP H03157448A
Authority
JP
Japan
Prior art keywords
epoxy resin
resin composition
corrosion
copper wire
calcium hydroxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1297934A
Other languages
English (en)
Inventor
Yoshihiro Matsunaga
義弘 松永
Tadao Nishimori
西森　忠雄
Hiromasa Matsuoka
松岡　宏昌
Kozo Shimamoto
島本　幸三
Kiyoaki Tsumura
清昭 津村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1297934A priority Critical patent/JPH03157448A/ja
Priority to US07/611,585 priority patent/US5093712A/en
Priority to DE19904036096 priority patent/DE4036096A1/de
Priority to GB9024722A priority patent/GB2238660B/en
Publication of JPH03157448A publication Critical patent/JPH03157448A/ja
Pending legal-status Critical Current

Links

Classifications

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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ［産業上の利用分野］ この発明は、半導体におけるアルミニウム配線および銅
ワイヤーなどの防食性が優れた半導体封止用エポキシ樹
脂組成物に関するものである。
［従来の技術］ 第３図は従来の樹脂封止半導体装置を示す断面図である
。図において、４はダイパッド５上に半日または樹脂な
どの接合材６により固定された半導体素子、７は半導体
素子４の一部に設けられたアルミニウム電極バッド４１
とインナーリード８とを電気的に接続する銅ワイヤ−９
は半導体４゜銅ワイヤ−７およびインナーリード８の端
部を含む部分を封止する封止用半導体エポキシ樹脂組成
物である。
従来の半導体封止用エポキシ樹脂組成物を用いた、かか
る構成においては、封止用エポキシ樹脂組成物９とイン
ナーリード８との隙間、あるいは半導体素子４との界面
に隙間が生じ、その間隙を通じて外部から水分が侵入し
、半導体素子４上のアルミニウム電極パッド４１．銅ワ
イヤ−７などが腐食し、断線するといった事故が発生す
る。
この腐食の原因は上記水分と樹脂中に含まれる陰イオン
性不純物との相互作用ならびに有機酸の存在に太き（左
右されるといわれている。
従来の樹脂封止型半導体装置には、耐熱性および耐湿性
などに優れたエポキシ樹脂組成物が封止材として用いら
れているが、このエポキシ樹脂の中には製造に由来する
加水分解性塩素や難燃材として用いられる臭素化エポキ
シのハロゲン化物が含まれている。これらのハロゲン化
物が封止材中を拡散侵入してくる水分とともに半導体素
子のアルミニウム配線を腐食させる。また、このアルミ
ニウム配線に対して、封止樹脂中のギ酸、酢酸の有機酸
イオンが関与することが知られている（特開昭６０−３
８８４７号公報）。
上述のアルミニウム配線の腐食を抑制するものとして、
（Ａ）特開昭６０−３８８４７号公報に示されるように
被覆モールド樹脂の処理工程における加熱の際、雰囲気
中の酸素と接触しないように不活性雰囲気および減圧下
で処理して製造される、有機酸イオンを低減した半導体
装１ｔ、（Ｂ）特開昭６０−８０２５９号公報に示され
るように多官能エポキシ化合物とモリブデン酸塩を少な
くとも含む樹脂組成物で封止した半導体装置、（Ｃ）特
開昭６０−８４３２２号公報に示されるように多官能エ
ポキシ化合物とビフェニルテトラカルボン酸二無水物と
を少な（とも含む半導体封止用樹脂組成物、（Ｄ）特開
昭６２−１５０８６０号公報に示されるように半導体素
子およびリード線上に特定の有機リン酸塩・アミン系化
合物を含む材料を被覆した半導体装置、（Ｅ）特開昭６
２−２０７３１９号公報、（Ｆ）特開昭６２−２８５９
１２号公報、（Ｇ）特開昭６３−１７９２５号公報、（
Ｈ）特開昭６１−１９６２５号公報、（Ｉ）特開昭６０
−１９０４５３号公報に示されるようにハロゲンイオン
、アルカリ金属イオン、有機酸イオンをビスマス系無機
イオン交換体、多価金属酸およびその酸ハイドロタルサ
イト、鉄酸、ジルコニウム酸。
チタン酸、含水３酸化ビスマス酸で補足低減する半導体
封止用樹脂組成物などが提供されている。
しかし、これらはいずれも高温環境におけるアルミニウ
ム配線の腐食抑制について何ら触れられていない。
半導体装置の信頼性の問題として、半導体装置の発熱、
使用環境の温度に対する信頼性が要求される。従来は半
導体装置のリード線に金ワイヤーを利用することが多く
、高温環境におけるリード線およびアルミニウム電極パ
ッドとの接合部の腐食は問題視されることはなかった。
しかし、金ワイヤーよりも安価な銅ワイヤーを利用する
には、高温（１７０℃〜２２０°Ｃ）における腐食の問
題が発生する。
［発明が解決しようとする課題］ 以上述べたように、銅ワイヤーを半導体装置に利用しよ
うとすれば、高温環境における腐食を解決する方策を講
じることが必要である。この発明者らは、この高温環境
腐食の発生原因を調べた結果、封止用樹脂組成物が高温
で空気中の酸素によって酸化され、ギ酸、酢酸、乳酸な
どの有機酸を発生するとともに難燃剤中の臭素が遊離臭
素として発生し、銅ワイヤーおよび銅ワイヤ−・アルミ
ニウム接合部を腐食することがわかった。すなわち、こ
の高温環境腐食は有機酸を電解質とした腐食であり、不
純物として存在する遊離塩素および難燃剤からの遊離臭
素によって腐食が促進する、複雑な腐食形態をとるもの
であり、上述した従来の技術では、方策を講じることが
極めて難しいといった問題点があった。
この発明は上記のような問題点を解消するためになされ
たもので、高温環境における銅ワイヤ−、銅ワイヤーと
アルミニウム接合部およびアルミニウム配線などの腐食
が最も高効率に抑制できる半導体封止用エポキシ樹脂組
成物をうろことを目的とする。
［ｌ１題を解決するための手段］ この発明に係る半導体封止用エポキシ樹脂組成物は、エ
ポキシ樹脂および硬化促進剤を必須成分とする半導体封
止用エポキシ樹脂組成物において、当該樹脂組成物に酸
化鉛、水酸化カルシウム。
および酸化亜鉛のうちの少な（とも一種を含めたもので
ある。
〔作用］ 酸化鉛、水酸化カルシウム、および酸化亜鉛は封止用樹
脂組成物が酸化して発生する有機酸と反応し、非電解質
の有機酸塩となる。また、銅は封止樹脂中の難燃性エポ
キシを分解劣化させる触媒作用を有するが、有機酸塩が
銅表面を覆い、触媒作用を抑制するため遊離臭素が減少
する。このような作用によって腐食が抑制されるもので
ある。
［実施例］ 以下、実施例および比較例により、この発明を具体的に
説明する。ここで用いた封止用樹脂組成物はフェノール
硬化クレゾールノボラックエボキシ樹脂成形材料（タレ
ゾールノボラックエポキシ樹脂、硬化剤としてフェノ−
、ルツボラック樹脂、硬化促進剤としてトリフェニール
ホスフィン）に酸化鉛、水酸化カルシウム、および酸化
亜鉛の単独あるいは混合物を添加したものである。また
、上記酸化物を添加しない場合およびビス・マス系無機
イオン交換体（東亜合成化学製；ＩＸＥ６００）を添加
した場合を比較例とした。これら各成分の配合割合は第
１表に示す通りである。上記添加物の重量は封止樹脂組
成物の約３ｗｔ％としたときの効果を例示した。
第１表に示す封止用樹脂組成物を使用して、銅ワイヤー
を用いたモデルＩＣをトランスファ成形した後、２２０
℃　９６時間大気雰囲気の電気炉に放置した。冷却後モ
デルＩＣの断面顕微鏡観察を行ない、銅ワイヤ−、銅ワ
イヤーとアルミニウム接合部およびアルミニウム配線の
腐食を観測した。腐食量は銅ワイヤーについては線径の
減少量を測定し、銅ワイヤーとアルミニウム接合部の腐
食は接合界面の腐食長さを測定し、アルミニウム配線の
腐食は断線の有無を調べた。その結果を第２表に示す。
第２表 第２表に示すように、高温における腐食抑制効果は、こ
の発明品の方が従来品よりも極めて優れ、またビスマス
系無機イオン交換体と同等あるいはそれより優れた腐食
抑制効果を示すことがわかった。なお、前記フェノール
硬化クレゾールノボラック樹脂成形材料に酸化鉛、水酸
化カルシウムおよび酸化亜鉛の少なくとも１種を０．１
〜２０ｗｔ％含有させたものについても検討したが、第
２表とほぼ同様の結果を得た。
腐食状態の観察 第１表に示すこの発明品であるＩおよび従来品である■
の封止用樹脂組成物を使用して、銅ワイヤーをモールド
成形した後、２２０℃９６時間大気雰囲気の電気炉に放
置した。冷却後、銅ワイヤーの断面顕微鏡観察によって
腐食の状態を調べた。その結果を第１図および第２図に
倍率１００倍の写真で示す。この発明の封止用樹脂組成
物を使用したもの（第１図）は腐食を観測することがで
きなかった。一方、従来品を使用したもの（第２図）は
最大１２０μｍの腐食部３による減肉が観測された。
［発明の効果］ 以上のように、この発明によれば半導体対土用エポキシ
樹脂組成物として、酸化鉛、水酸化カルシウムおよび酸
化亜鉛のうちの少なくとも一種を含むように構成したの
で、高温環境における銅ワイヤ−、銅ワイヤーとアルミ
ニウム接合部およびアルミニウム配線などの腐食を抑制
することができ、この封止用樹脂組成物を樹脂封止型半
導体装置に適用するときは信頼性の高いものが得られる
効果がある。
【図面の簡単な説明】
第１図はこの発明の半導体対土用エポキシ樹脂組成物を
銅ワイヤーに使用したときの腐食抑制状態を示す金属組
織を表わす顕微鏡写真、第２図は従来の半導体対土用エ
ポキシ樹脂組成物を銅ワイヤーに使用したときの腐食状
態を示す金属組織を表わす顕微鏡写真、第３図は従来の
樹脂封止型半導体装置を示す断面図である。図において
、ｌは銅ワイヤーの断面、２１はこの発明の半導体封止
用エポキン樹脂組成物である。 なお、 各図中、 同一符号は同一または相当部分 を示す。

Claims (1)

    【特許請求の範囲】
  1. エポキシ樹脂および硬化促進剤を必須成分とする半導体
    封止用エポキシ樹脂組成物において、酸化鉛、水酸化カ
    ルシウムおよび酸化亜鉛のうちの少なくとも１種を含む
    ことを特徴とする半導体封止用エポキシ樹脂組成物。
JP1297934A 1989-11-15 1989-11-15 半導体封止用エポキシ樹脂組成物 Pending JPH03157448A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1297934A JPH03157448A (ja) 1989-11-15 1989-11-15 半導体封止用エポキシ樹脂組成物
US07/611,585 US5093712A (en) 1989-11-15 1990-11-13 Resin-sealed semiconductor device
DE19904036096 DE4036096A1 (de) 1989-11-15 1990-11-13 Kunstharzversiegelte halbleitervorrichtung
GB9024722A GB2238660B (en) 1989-11-15 1990-11-14 Resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1297934A JPH03157448A (ja) 1989-11-15 1989-11-15 半導体封止用エポキシ樹脂組成物

Publications (1)

Publication Number Publication Date
JPH03157448A true JPH03157448A (ja) 1991-07-05

Family

ID=17852987

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Country Status (4)

Country Link
US (1) US5093712A (ja)
JP (1) JPH03157448A (ja)
DE (1) DE4036096A1 (ja)
GB (1) GB2238660B (ja)

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Also Published As

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GB2238660B (en) 1993-06-02
GB2238660A (en) 1991-06-05
DE4036096C2 (ja) 1993-08-12
DE4036096A1 (de) 1991-05-16
US5093712A (en) 1992-03-03
GB9024722D0 (en) 1991-01-02

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