JPH0585502B2 - - Google Patents
Info
- Publication number
- JPH0585502B2 JPH0585502B2 JP63109212A JP10921288A JPH0585502B2 JP H0585502 B2 JPH0585502 B2 JP H0585502B2 JP 63109212 A JP63109212 A JP 63109212A JP 10921288 A JP10921288 A JP 10921288A JP H0585502 B2 JPH0585502 B2 JP H0585502B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- reaction tube
- layer
- reaction
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 86
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 86
- 238000006243 chemical reaction Methods 0.000 claims description 62
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 9
- 239000010453 quartz Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000012808 vapor phase Substances 0.000 description 7
- 238000004031 devitrification Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- -1 and furthermore Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- DWAWYEUJUWLESO-UHFFFAOYSA-N trichloromethylsilane Chemical compound [SiH3]C(Cl)(Cl)Cl DWAWYEUJUWLESO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63109212A JPH01282153A (ja) | 1988-05-06 | 1988-05-06 | 炭化珪素質反応管 |
| US07/346,736 US4999228A (en) | 1988-05-06 | 1989-05-03 | Silicon carbide diffusion tube for semi-conductor |
| DE89108265T DE68909481T2 (de) | 1988-05-06 | 1989-05-08 | Siliciumcarbid-Diffusionsrohr für Halbleiter. |
| EP89108265A EP0340802B1 (en) | 1988-05-06 | 1989-05-08 | Silicon carbide diffusion tube for semi-conductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63109212A JPH01282153A (ja) | 1988-05-06 | 1988-05-06 | 炭化珪素質反応管 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01282153A JPH01282153A (ja) | 1989-11-14 |
| JPH0585502B2 true JPH0585502B2 (zh) | 1993-12-07 |
Family
ID=14504437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63109212A Granted JPH01282153A (ja) | 1988-05-06 | 1988-05-06 | 炭化珪素質反応管 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01282153A (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0486938B1 (en) * | 1990-11-20 | 1999-05-19 | Asahi Glass Company Ltd. | Heat treating apparatuses for semiconductors and high purity silicon carbide parts for the apparatuses and a method of making thereof |
| JPH05279123A (ja) * | 1992-02-04 | 1993-10-26 | Shin Etsu Chem Co Ltd | 半導体製造用炭化珪素質部材 |
| CA2099788A1 (en) * | 1992-07-31 | 1994-02-01 | Michael A. Pickering | Ultra pure silicon carbide and high temperature semiconductor processing equipment made therefrom |
| JP3642446B2 (ja) * | 1996-08-01 | 2005-04-27 | 東芝セラミックス株式会社 | 半導体ウエハ処理具 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59189622A (ja) * | 1983-04-13 | 1984-10-27 | Toshiba Ceramics Co Ltd | 半導体用拡散炉プロセスチユ−ブ |
| JPS6311589A (ja) * | 1986-07-01 | 1988-01-19 | イビデン株式会社 | 耐熱性治具及びその製造方法 |
| JPS6335452A (ja) * | 1986-07-31 | 1988-02-16 | 東芝セラミツクス株式会社 | 半導体拡散炉用構成部材の製造方法 |
| JPS6385075A (ja) * | 1986-09-26 | 1988-04-15 | 宇部興産株式会社 | 半導体用拡散炉プロセスチユ−ブ |
-
1988
- 1988-05-06 JP JP63109212A patent/JPH01282153A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59189622A (ja) * | 1983-04-13 | 1984-10-27 | Toshiba Ceramics Co Ltd | 半導体用拡散炉プロセスチユ−ブ |
| JPS6311589A (ja) * | 1986-07-01 | 1988-01-19 | イビデン株式会社 | 耐熱性治具及びその製造方法 |
| JPS6335452A (ja) * | 1986-07-31 | 1988-02-16 | 東芝セラミツクス株式会社 | 半導体拡散炉用構成部材の製造方法 |
| JPS6385075A (ja) * | 1986-09-26 | 1988-04-15 | 宇部興産株式会社 | 半導体用拡散炉プロセスチユ−ブ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01282153A (ja) | 1989-11-14 |
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