JPH0584684B2 - - Google Patents

Info

Publication number
JPH0584684B2
JPH0584684B2 JP59044122A JP4412284A JPH0584684B2 JP H0584684 B2 JPH0584684 B2 JP H0584684B2 JP 59044122 A JP59044122 A JP 59044122A JP 4412284 A JP4412284 A JP 4412284A JP H0584684 B2 JPH0584684 B2 JP H0584684B2
Authority
JP
Japan
Prior art keywords
film
piezoelectric
substrate
resonator
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59044122A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60189307A (ja
Inventor
Hitoshi Suzuki
Hiroaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59044122A priority Critical patent/JPS60189307A/ja
Priority to EP85301578A priority patent/EP0155145B1/en
Priority to DE8585301578T priority patent/DE3584019D1/de
Priority to CA000476117A priority patent/CA1236182A/en
Priority to US06/709,600 priority patent/US4642508A/en
Publication of JPS60189307A publication Critical patent/JPS60189307A/ja
Publication of JPH0584684B2 publication Critical patent/JPH0584684B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02133—Means for compensation or elimination of undesirable effects of stress
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/081—Shaping or machining of piezoelectric or electrostrictive bodies by coating or depositing using masks, e.g. lift-off
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP59044122A 1984-03-09 1984-03-09 圧電薄膜共振器およびその製造方法 Granted JPS60189307A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59044122A JPS60189307A (ja) 1984-03-09 1984-03-09 圧電薄膜共振器およびその製造方法
EP85301578A EP0155145B1 (en) 1984-03-09 1985-03-07 Piezoelectric resonating device
DE8585301578T DE3584019D1 (de) 1984-03-09 1985-03-07 Piezoelektrische resonatoranordnung.
CA000476117A CA1236182A (en) 1984-03-09 1985-03-08 Piezoelectric resonating device
US06/709,600 US4642508A (en) 1984-03-09 1985-03-08 Piezoelectric resonating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59044122A JPS60189307A (ja) 1984-03-09 1984-03-09 圧電薄膜共振器およびその製造方法

Publications (2)

Publication Number Publication Date
JPS60189307A JPS60189307A (ja) 1985-09-26
JPH0584684B2 true JPH0584684B2 (enrdf_load_stackoverflow) 1993-12-02

Family

ID=12682795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59044122A Granted JPS60189307A (ja) 1984-03-09 1984-03-09 圧電薄膜共振器およびその製造方法

Country Status (5)

Country Link
US (1) US4642508A (enrdf_load_stackoverflow)
EP (1) EP0155145B1 (enrdf_load_stackoverflow)
JP (1) JPS60189307A (enrdf_load_stackoverflow)
CA (1) CA1236182A (enrdf_load_stackoverflow)
DE (1) DE3584019D1 (enrdf_load_stackoverflow)

Families Citing this family (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0226572B1 (de) * 1985-12-20 1991-11-06 AVL Gesellschaft für Verbrennungskraftmaschinen und Messtechnik mbH.Prof.Dr.Dr.h.c. Hans List Messwertaufnehmer mit einem flexiblen piezoelektrischen Film als Messelement
US5011568A (en) * 1990-06-11 1991-04-30 Iowa State University Research Foundation, Inc. Use of sol-gel derived tantalum oxide as a protective coating for etching silicon
US5231327A (en) * 1990-12-14 1993-07-27 Tfr Technologies, Inc. Optimized piezoelectric resonator-based networks
US5162691A (en) * 1991-01-22 1992-11-10 The United States Of America As Represented By The Secretary Of The Army Cantilevered air-gap type thin film piezoelectric resonator
US5233259A (en) * 1991-02-19 1993-08-03 Westinghouse Electric Corp. Lateral field FBAR
JP3148946B2 (ja) * 1991-05-30 2001-03-26 キヤノン株式会社 探針駆動機構並びに該機構を用いたトンネル電流検出装置、情報処理装置、圧電式アクチュエータ
JP2665106B2 (ja) * 1992-03-17 1997-10-22 日本碍子株式会社 圧電／電歪膜型素子
JP2892882B2 (ja) * 1992-04-15 1999-05-17 松下電器産業株式会社 圧電振動子とその製造方法
US5367308A (en) * 1992-05-29 1994-11-22 Iowa State University Research Foundation, Inc. Thin film resonating device
US5373268A (en) * 1993-02-01 1994-12-13 Motorola, Inc. Thin film resonator having stacked acoustic reflecting impedance matching layers and method
JP3521499B2 (ja) * 1993-11-26 2004-04-19 日本碍子株式会社 圧電／電歪膜型素子
US5612536A (en) * 1994-02-07 1997-03-18 Matsushita Electric Industrial Co., Ltd. Thin film sensor element and method of manufacturing the same
US5552655A (en) * 1994-05-04 1996-09-03 Trw Inc. Low frequency mechanical resonator
US5864261A (en) * 1994-05-23 1999-01-26 Iowa State University Research Foundation Multiple layer acoustical structures for thin-film resonator based circuits and systems
US5630949A (en) * 1995-06-01 1997-05-20 Tfr Technologies, Inc. Method and apparatus for fabricating a piezoelectric resonator to a resonant frequency
US5596239A (en) * 1995-06-29 1997-01-21 Motorola, Inc. Enhanced quality factor resonator
US5696423A (en) * 1995-06-29 1997-12-09 Motorola, Inc. Temperature compenated resonator and method
US5617065A (en) * 1995-06-29 1997-04-01 Motorola, Inc. Filter using enhanced quality factor resonator and method
US5692279A (en) * 1995-08-17 1997-12-02 Motorola Method of making a monolithic thin film resonator lattice filter
FR2746229B1 (fr) * 1996-03-15 1998-05-22 Dispositif electronique comprenant une base de temps integree
JP3267151B2 (ja) * 1996-04-12 2002-03-18 ミノルタ株式会社 圧電振動部材およびその製造方法
US6051907A (en) * 1996-10-10 2000-04-18 Nokia Mobile Phones Limited Method for performing on-wafer tuning of thin film bulk acoustic wave resonators (FBARS)
US5873154A (en) * 1996-10-17 1999-02-23 Nokia Mobile Phones Limited Method for fabricating a resonator having an acoustic mirror
DE69739289D1 (de) * 1996-10-17 2009-04-16 Avago Technologies Wireless Ip Chtoberflächenwellenresonatoren
US5872493A (en) * 1997-03-13 1999-02-16 Nokia Mobile Phones, Ltd. Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror
JP3839492B2 (ja) * 1997-04-24 2006-11-01 三菱電機株式会社 薄膜圧電素子
US5910756A (en) * 1997-05-21 1999-06-08 Nokia Mobile Phones Limited Filters and duplexers utilizing thin film stacked crystal filter structures and thin film bulk acoustic wave resonators
US6408496B1 (en) * 1997-07-09 2002-06-25 Ronald S. Maynard Method of manufacturing a vibrational transducer
US6140740A (en) * 1997-12-30 2000-10-31 Remon Medical Technologies, Ltd. Piezoelectric transducer
US20030036746A1 (en) 2001-08-16 2003-02-20 Avi Penner Devices for intrabody delivery of molecules and systems and methods utilizing same
US6081171A (en) * 1998-04-08 2000-06-27 Nokia Mobile Phones Limited Monolithic filters utilizing thin film bulk acoustic wave devices and minimum passive components for controlling the shape and width of a passband response
KR100306718B1 (ko) * 1998-05-02 2001-12-17 장광현 교각을이용한공기막형박막공진기및그제조방법
FI108583B (fi) 1998-06-02 2002-02-15 Nokia Corp Resonaattorirakenteita
JP2000180250A (ja) * 1998-10-09 2000-06-30 Ngk Insulators Ltd 質量センサ及び質量検出方法
JP2000209063A (ja) * 1998-11-12 2000-07-28 Mitsubishi Electric Corp 薄膜圧電素子
US6351057B1 (en) * 1999-01-25 2002-02-26 Samsung Electro-Mechanics Co., Ltd Microactuator and method for fabricating the same
JP3531522B2 (ja) * 1999-04-19 2004-05-31 株式会社村田製作所 圧電共振子
US6222304B1 (en) * 1999-07-28 2001-04-24 The Charles Stark Draper Laboratory Micro-shell transducer
US6441539B1 (en) * 1999-11-11 2002-08-27 Murata Manufacturing Co., Ltd. Piezoelectric resonator
US6377136B1 (en) * 2000-02-04 2002-04-23 Agere Systems Guardian Corporation Thin film resonator filter having at least one component with different resonant frequency sets or electrode capacitance
JP3482939B2 (ja) * 2000-05-09 2004-01-06 日本碍子株式会社 圧電／電歪膜型素子
EP1170862B1 (en) 2000-06-23 2012-10-10 Murata Manufacturing Co., Ltd. Piezoelectric resonator and piezoelectric filter using the same
KR100473871B1 (ko) * 2000-11-13 2005-03-08 주식회사 엠에스솔루션 박막 필터
KR100398363B1 (ko) * 2000-12-05 2003-09-19 삼성전기주식회사 Ｆｂａｒ 소자 및 그 제조방법
JP3939939B2 (ja) * 2001-07-17 2007-07-04 富士通株式会社 圧電薄膜共振素子の製造方法
US6778038B2 (en) * 2001-10-05 2004-08-17 Tdk Corporation Piezoelectric resonant filter, duplexer, and method of manufacturing same
JP3954395B2 (ja) 2001-10-26 2007-08-08 富士通株式会社 圧電薄膜共振子、フィルタ、および圧電薄膜共振子の製造方法
JP3846271B2 (ja) * 2001-11-05 2006-11-15 松下電器産業株式会社 薄膜圧電体素子およびその製造方法
TW525284B (en) * 2002-03-01 2003-03-21 Advanced Semiconductor Eng Bump process
US7312674B2 (en) * 2002-08-06 2007-12-25 The Charles Stark Draper Laboratory, Inc. Resonator system with a plurality of individual mechanically coupled resonators and method of making same
JP4128836B2 (ja) 2002-09-27 2008-07-30 Ｔｄｋ株式会社 薄膜圧電共振子、それを用いたフィルタ及びデュプレクサ
US6741147B2 (en) * 2002-09-30 2004-05-25 Agere Systems Inc. Method and apparatus for adjusting the resonant frequency of a thin film resonator
JP2004147246A (ja) * 2002-10-28 2004-05-20 Matsushita Electric Ind Co Ltd 圧電振動子、それを用いたフィルタ及び圧電振動子の調整方法
JP3889351B2 (ja) 2002-12-11 2007-03-07 Ｔｄｋ株式会社 デュプレクサ
US7105988B2 (en) * 2003-04-30 2006-09-12 Vibration-X Di Bianchini Emanulee E C. Sas Piezoelectric device and method to manufacture a piezoelectric device
KR100542557B1 (ko) * 2003-09-09 2006-01-11 삼성전자주식회사 박막 공진기와, 박막 공진기의 제조 방법 및 박막공진기를 구비하는 필터
KR100662865B1 (ko) * 2003-10-08 2007-01-02 삼성전자주식회사 박막 벌크 음향 공진기 및 그 제조방법
JP4024741B2 (ja) * 2003-10-20 2007-12-19 富士通メディアデバイス株式会社 圧電薄膜共振子及びフィルタ
JP4534158B2 (ja) * 2003-12-19 2010-09-01 宇部興産株式会社 圧電薄膜デバイスの製造方法
US20050148065A1 (en) * 2003-12-30 2005-07-07 Intel Corporation Biosensor utilizing a resonator having a functionalized surface
JP3945486B2 (ja) * 2004-02-18 2007-07-18 ソニー株式会社 薄膜バルク音響共振子およびその製造方法
JP4413061B2 (ja) * 2004-04-09 2010-02-10 株式会社村上開明堂 ディスプレイ保持装置
JP4149416B2 (ja) 2004-05-31 2008-09-10 富士通メディアデバイス株式会社 圧電薄膜共振子およびフィルタならびにそれらの製造方法
JP4513596B2 (ja) 2004-08-25 2010-07-28 株式会社デンソー 超音波センサ
WO2006027873A1 (ja) * 2004-09-10 2006-03-16 Murata Manufacturing Co., Ltd. 圧電薄膜共振子
EP1838210B1 (en) * 2004-11-24 2010-10-13 Remon Medical Technologies Ltd. Implantable medical device with integrated acoustic transducer
US7522962B1 (en) 2004-12-03 2009-04-21 Remon Medical Technologies, Ltd Implantable medical device with integrated acoustic transducer
US7667558B2 (en) * 2004-12-07 2010-02-23 Panasonic Corporation Thin film elastic wave resonator
JP2006180304A (ja) 2004-12-24 2006-07-06 Hitachi Media Electoronics Co Ltd 圧電バルク共振子およびその製造方法、圧電バルク共振子を用いたフィルタ、それを用いた半導体集積回路装置、並びにそれを用いた高周波モジュール
JP4149444B2 (ja) * 2005-01-12 2008-09-10 富士通メディアデバイス株式会社 圧電薄膜共振子及びこれを用いたフィルタ
WO2006087878A1 (ja) 2005-02-21 2006-08-24 Murata Manufacturing Co., Ltd. 圧電薄膜共振子
JP4550658B2 (ja) 2005-04-28 2010-09-22 富士通メディアデバイス株式会社 圧電薄膜共振器およびフィルタ
FR2889375B1 (fr) * 2005-07-29 2008-02-15 Temex Sas Soc Par Actions Simp Structure resonnante hybride
US7615012B2 (en) * 2005-08-26 2009-11-10 Cardiac Pacemakers, Inc. Broadband acoustic sensor for an implantable medical device
US7570998B2 (en) * 2005-08-26 2009-08-04 Cardiac Pacemakers, Inc. Acoustic communication transducer in implantable medical device header
JP4707533B2 (ja) 2005-10-27 2011-06-22 太陽誘電株式会社 圧電薄膜共振器およびフィルタ
EP1944866B1 (en) * 2005-11-04 2011-12-28 Murata Manufacturing Co., Ltd. Piezoelectric thin film resonator
JP4252584B2 (ja) 2006-04-28 2009-04-08 富士通メディアデバイス株式会社 圧電薄膜共振器およびフィルタ
JP4719623B2 (ja) 2006-05-31 2011-07-06 太陽誘電株式会社 フィルタ
WO2008011577A2 (en) * 2006-07-21 2008-01-24 Cardiac Pacemakers, Inc. Ultrasonic transducer for a metallic cavity implanted medical device
US7912548B2 (en) * 2006-07-21 2011-03-22 Cardiac Pacemakers, Inc. Resonant structures for implantable devices
KR101238360B1 (ko) * 2006-08-16 2013-03-04 삼성전자주식회사 공진기 및 그 제조 방법
EP2066027B1 (en) * 2006-08-25 2012-09-05 Ube Industries, Ltd. Thin film piezoelectric resonator and method for manufacturing the same
JP4838093B2 (ja) 2006-10-25 2011-12-14 太陽誘電株式会社 圧電薄膜共振器およびフィルタ
JP4870541B2 (ja) 2006-12-15 2012-02-08 太陽誘電株式会社 圧電薄膜共振器およびフィルタ
US20080227747A1 (en) * 2007-03-15 2008-09-18 Tabbiner Philip Composition and methods for treating or preventing degenerative joint and cardiovascular conditions
JP5080858B2 (ja) 2007-05-17 2012-11-21 太陽誘電株式会社 圧電薄膜共振器およびフィルタ
US8825161B1 (en) 2007-05-17 2014-09-02 Cardiac Pacemakers, Inc. Acoustic transducer for an implantable medical device
WO2008156981A2 (en) * 2007-06-14 2008-12-24 Cardiac Pacemakers, Inc. Multi-element acoustic recharging system
KR20100041846A (ko) * 2007-11-21 2010-04-22 후지쯔 가부시끼가이샤 필터, 그것을 이용한 듀플렉서 및 그 듀플렉서를 이용한 통신기
CN101946409B (zh) * 2008-02-18 2014-08-20 株式会社村田制作所 弹性波装置及其制造方法
WO2009110062A1 (ja) 2008-03-04 2009-09-11 富士通株式会社 圧電薄膜共振器、フィルタ、通信モジュール、および通信装置
JP5220503B2 (ja) * 2008-07-23 2013-06-26 太陽誘電株式会社 弾性波デバイス
US8291559B2 (en) * 2009-02-24 2012-10-23 Epcos Ag Process for adapting resonance frequency of a BAW resonator
JP2011018723A (ja) * 2009-07-08 2011-01-27 Seiko Epson Corp 圧電素子およびその製造方法、圧電アクチュエーター、液体噴射ヘッド、並びに、液体噴射装置
CN102834943B (zh) * 2011-03-25 2015-09-09 日本碍子株式会社 层叠体及其制造方法
KR101853740B1 (ko) * 2011-07-27 2018-06-14 삼성전자주식회사 체적 음향 공진기 및 체적 음향 공진기를 이용한 듀플렉서
US10658998B2 (en) 2013-07-31 2020-05-19 Oepic Semiconductors, Inc. Piezoelectric film transfer for acoustic resonators and filters
US10200013B2 (en) 2016-02-18 2019-02-05 X-Celeprint Limited Micro-transfer-printed acoustic wave filter device
CN113839640A (zh) * 2021-07-16 2021-12-24 常州承芯半导体有限公司 体声波谐振装置及其形成方法、滤波装置及射频前端装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3486046A (en) * 1968-10-17 1969-12-23 Westinghouse Electric Corp Thin film piezoelectric resonator
JPS5829211A (ja) * 1981-08-13 1983-02-21 Nec Corp 薄膜圧電振動子
JPS5831609A (ja) * 1981-08-19 1983-02-24 Nec Corp 薄膜圧電振動子
JPS58121817A (ja) * 1982-01-14 1983-07-20 Murata Mfg Co Ltd 圧電共振子
JPS58137317A (ja) * 1982-02-09 1983-08-15 Nec Corp 圧電薄膜複合振動子
JPS58137318A (ja) * 1982-02-10 1983-08-15 Nec Corp 薄膜圧電振動子
JPS58175314A (ja) * 1982-03-11 1983-10-14 Nec Corp 薄膜圧電振動子
US4531267A (en) * 1982-03-30 1985-07-30 Honeywell Inc. Method for forming a pressure sensor
US4502932A (en) * 1983-10-13 1985-03-05 The United States Of America As Represented By The United States Department Of Energy Acoustic resonator and method of making same
US4517486A (en) * 1984-02-21 1985-05-14 The United States Of America As Represented By The Secretary Of The Army Monolitic band-pass filter using piezoelectric cantilevers

Also Published As

Publication number Publication date
JPS60189307A (ja) 1985-09-26
CA1236182A (en) 1988-05-03
EP0155145A3 (en) 1987-03-04
EP0155145A2 (en) 1985-09-18
DE3584019D1 (de) 1991-10-17
US4642508A (en) 1987-02-10
EP0155145B1 (en) 1991-09-11

Similar Documents

Publication Publication Date Title
JPH0584684B2 (enrdf_load_stackoverflow)
US4456850A (en) Piezoelectric composite thin film resonator
US9923544B2 (en) Piezoelectric vibration element, manufacturing method for piezoelectric vibration element, piezoelectric resonator, electronic device, and electronic apparatus
EP1100196B1 (en) Piezoelectric Resonator
US8970316B2 (en) Resonating element, resonator, electronic device, electronic apparatus, and mobile object
US20030107456A1 (en) Thin-film piezoelectric resonator, band-pass filter and method of making thin-film piezoelectric resonator
EP1528673A1 (en) Piezoelectric resonator element, piezoelectric device, method of manufacturing the same, cellular phone device utilizing piezoelectric device, and electronic equipment utilizing piezoelectric device
JPH01157108A (ja) 圧電薄膜共振子
JPH09130199A (ja) 圧電薄膜素子およびその製法
JP5023734B2 (ja) 圧電振動片の製造方法及び圧電振動素子
JPS6068711A (ja) 圧電薄膜共振子
US20040061573A1 (en) Method and apparatus for adjusting the resonant frequency of a thin film resonator
JPS6382116A (ja) 圧電薄膜共振子およびその製造方法
JPS62266906A (ja) 圧電薄膜共振子
JPS6276913A (ja) 薄膜弾性波装置
JPH0640611B2 (ja) 圧電薄膜共振子
JP4196641B2 (ja) 超薄板圧電デバイスとその製造方法
JP2000165188A (ja) 圧電共振子
JPS6281807A (ja) 圧電薄膜共振子
JP3493315B2 (ja) 圧電共振子
JPS61218214A (ja) 圧電薄膜共振子
JPS61127217A (ja) 圧電薄膜共振子
EP0594117B1 (en) Piezoelectric filter and its production method
JPS61127218A (ja) 圧電薄膜共振子
JPS6127929B2 (enrdf_load_stackoverflow)

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term