JPH0556666B2 - - Google Patents

Info

Publication number
JPH0556666B2
JPH0556666B2 JP59200886A JP20088684A JPH0556666B2 JP H0556666 B2 JPH0556666 B2 JP H0556666B2 JP 59200886 A JP59200886 A JP 59200886A JP 20088684 A JP20088684 A JP 20088684A JP H0556666 B2 JPH0556666 B2 JP H0556666B2
Authority
JP
Japan
Prior art keywords
thin film
terminal
electrode
transistor device
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59200886A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6179259A (ja
Inventor
Masafumi Shinho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16431878&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH0556666(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP59200886A priority Critical patent/JPS6179259A/ja
Publication of JPS6179259A publication Critical patent/JPS6179259A/ja
Publication of JPH0556666B2 publication Critical patent/JPH0556666B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
JP59200886A 1984-09-26 1984-09-26 薄膜トランジスタ装置 Granted JPS6179259A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59200886A JPS6179259A (ja) 1984-09-26 1984-09-26 薄膜トランジスタ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59200886A JPS6179259A (ja) 1984-09-26 1984-09-26 薄膜トランジスタ装置

Publications (2)

Publication Number Publication Date
JPS6179259A JPS6179259A (ja) 1986-04-22
JPH0556666B2 true JPH0556666B2 (pt) 1993-08-20

Family

ID=16431878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59200886A Granted JPS6179259A (ja) 1984-09-26 1984-09-26 薄膜トランジスタ装置

Country Status (1)

Country Link
JP (1) JPS6179259A (pt)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010147032A1 (ja) * 2009-06-18 2010-12-23 シャープ株式会社 半導体装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0592227A3 (en) * 1992-10-07 1995-01-11 Sharp Kk Manufacture of a thin film transistor and production of a liquid crystal display device.
US5796116A (en) * 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
JPH10288950A (ja) * 1997-04-14 1998-10-27 Casio Comput Co Ltd 液晶表示装置
TW457690B (en) 1999-08-31 2001-10-01 Fujitsu Ltd Liquid crystal display
EP2073255B1 (en) * 2007-12-21 2016-08-10 Semiconductor Energy Laboratory Co., Ltd. Diode and display device comprising the diode
JP5407638B2 (ja) * 2009-07-28 2014-02-05 セイコーエプソン株式会社 アクティブマトリクス基板、電気光学装置、及び電子機器
JP6022118B2 (ja) 2014-04-30 2016-11-09 シャープ株式会社 アクティブマトリクス基板及び当該アクティブマトリクス基板を備える表示装置
JP2019197128A (ja) 2018-05-09 2019-11-14 三菱電機株式会社 表示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56153588A (en) * 1980-04-25 1981-11-27 Toshiba Corp Storage device
JPS58180054A (ja) * 1982-04-15 1983-10-21 Seiko Epson Corp マトリツクス画像表示装置
JPS5991479A (ja) * 1982-11-17 1984-05-26 セイコーエプソン株式会社 アクテイブマトリクス基板
JPS59166984A (ja) * 1983-03-14 1984-09-20 三菱電機株式会社 マトリクス型液晶表示装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56153588A (en) * 1980-04-25 1981-11-27 Toshiba Corp Storage device
JPS58180054A (ja) * 1982-04-15 1983-10-21 Seiko Epson Corp マトリツクス画像表示装置
JPS5991479A (ja) * 1982-11-17 1984-05-26 セイコーエプソン株式会社 アクテイブマトリクス基板
JPS59166984A (ja) * 1983-03-14 1984-09-20 三菱電機株式会社 マトリクス型液晶表示装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010147032A1 (ja) * 2009-06-18 2010-12-23 シャープ株式会社 半導体装置
JP5406295B2 (ja) * 2009-06-18 2014-02-05 シャープ株式会社 半導体装置
US8921857B2 (en) 2009-06-18 2014-12-30 Sharp Kabushiki Kaisha Semiconductor device

Also Published As

Publication number Publication date
JPS6179259A (ja) 1986-04-22

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