JPS56153588A - Storage device - Google Patents

Storage device

Info

Publication number
JPS56153588A
JPS56153588A JP5503780A JP5503780A JPS56153588A JP S56153588 A JPS56153588 A JP S56153588A JP 5503780 A JP5503780 A JP 5503780A JP 5503780 A JP5503780 A JP 5503780A JP S56153588 A JPS56153588 A JP S56153588A
Authority
JP
Japan
Prior art keywords
diodes
bus
ground
fuses
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5503780A
Other languages
Japanese (ja)
Other versions
JPS6231435B2 (en
Inventor
Keiichi Kawate
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5503780A priority Critical patent/JPS56153588A/en
Priority to US06/217,093 priority patent/US4368523A/en
Priority to EP80107999A priority patent/EP0031143B1/en
Priority to DE8080107999T priority patent/DE3071923D1/en
Priority to CA000367261A priority patent/CA1175938A/en
Publication of JPS56153588A publication Critical patent/JPS56153588A/en
Publication of JPS6231435B2 publication Critical patent/JPS6231435B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136263—Line defects

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • Digital Computer Display Output (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE:To prevent the lowering in manufacturing yield due to mixing with dust, by forming the diode so that the anodes become ground side between the fuse part and ground. CONSTITUTION:Diodes 26-29 are formed so that the anodes become ground potential side between the nonshort-circuit side of the fuses 6-9 and ground potential. If a failure takes place at the point alpha of the address bus A1 and the fuses 6, 7 are blown, the gate electrode of the transistor connected to the bus A1 is kept with the diode 26 or 27. Thus, the gate electrodes of the transistors 21, 22 do not become floating state. Although the bus a1 not in failure is connected to the reference potential with the diodes 28, 29, both diodes are in reverse bias to the scanning signal and they act like as high impedance element, thereby causing no effect.
JP5503780A 1979-12-20 1980-04-25 Storage device Granted JPS56153588A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP5503780A JPS56153588A (en) 1980-04-25 1980-04-25 Storage device
US06/217,093 US4368523A (en) 1979-12-20 1980-12-16 Liquid crystal display device having redundant pairs of address buses
EP80107999A EP0031143B1 (en) 1979-12-20 1980-12-17 Memory device
DE8080107999T DE3071923D1 (en) 1979-12-20 1980-12-17 Memory device
CA000367261A CA1175938A (en) 1979-12-20 1980-12-19 Memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5503780A JPS56153588A (en) 1980-04-25 1980-04-25 Storage device

Publications (2)

Publication Number Publication Date
JPS56153588A true JPS56153588A (en) 1981-11-27
JPS6231435B2 JPS6231435B2 (en) 1987-07-08

Family

ID=12987453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5503780A Granted JPS56153588A (en) 1979-12-20 1980-04-25 Storage device

Country Status (1)

Country Link
JP (1) JPS56153588A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6020397A (en) * 1983-07-15 1985-02-01 Toshiba Corp Semiconductor memory
JPS6179259A (en) * 1984-09-26 1986-04-22 Seiko Instr & Electronics Ltd Thin-film transistor device
US4823126A (en) * 1985-04-12 1989-04-18 Matsushita Electric Industrial Co. Ltd. Display device and a display method
JPH05198806A (en) * 1992-06-29 1993-08-06 Seiko Epson Corp Matrix array substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102567972B1 (en) 2018-06-04 2023-08-17 삼성전자주식회사 organic image sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6020397A (en) * 1983-07-15 1985-02-01 Toshiba Corp Semiconductor memory
JPS6179259A (en) * 1984-09-26 1986-04-22 Seiko Instr & Electronics Ltd Thin-film transistor device
JPH0556666B2 (en) * 1984-09-26 1993-08-20 Seiko Instr & Electronics
US4823126A (en) * 1985-04-12 1989-04-18 Matsushita Electric Industrial Co. Ltd. Display device and a display method
JPH05198806A (en) * 1992-06-29 1993-08-06 Seiko Epson Corp Matrix array substrate

Also Published As

Publication number Publication date
JPS6231435B2 (en) 1987-07-08

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