JPH0542166B2 - - Google Patents

Info

Publication number
JPH0542166B2
JPH0542166B2 JP57084706A JP8470682A JPH0542166B2 JP H0542166 B2 JPH0542166 B2 JP H0542166B2 JP 57084706 A JP57084706 A JP 57084706A JP 8470682 A JP8470682 A JP 8470682A JP H0542166 B2 JPH0542166 B2 JP H0542166B2
Authority
JP
Japan
Prior art keywords
output
circuit
transistor
capacitance
inductance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57084706A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58202607A (ja
Inventor
Michitaka Oosawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57084706A priority Critical patent/JPS58202607A/ja
Priority to US06/495,495 priority patent/US4528520A/en
Publication of JPS58202607A publication Critical patent/JPS58202607A/ja
Publication of JPH0542166B2 publication Critical patent/JPH0542166B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
JP57084706A 1982-05-21 1982-05-21 増幅器 Granted JPS58202607A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57084706A JPS58202607A (ja) 1982-05-21 1982-05-21 増幅器
US06/495,495 US4528520A (en) 1982-05-21 1983-05-17 Wide band high output amplifier using a power field effect transistor as an output stage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57084706A JPS58202607A (ja) 1982-05-21 1982-05-21 増幅器

Publications (2)

Publication Number Publication Date
JPS58202607A JPS58202607A (ja) 1983-11-25
JPH0542166B2 true JPH0542166B2 (US06229276-20010508-P00022.png) 1993-06-25

Family

ID=13838098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57084706A Granted JPS58202607A (ja) 1982-05-21 1982-05-21 増幅器

Country Status (2)

Country Link
US (1) US4528520A (US06229276-20010508-P00022.png)
JP (1) JPS58202607A (US06229276-20010508-P00022.png)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61134107A (ja) * 1984-12-05 1986-06-21 Nec Corp 増幅器
JPS62104303A (ja) * 1985-10-31 1987-05-14 Nec Corp 広帯域負帰還増幅回路
EP0320540B1 (en) * 1987-12-14 1993-09-08 SEGAL, Brahm An audio amplifier
US4821706A (en) * 1987-10-15 1989-04-18 North American Philips Corporation High voltage pulse power drive
EP0331778B1 (en) * 1988-03-09 1992-01-15 Hewlett-Packard GmbH Output amplifier
JP2936849B2 (ja) * 1991-12-10 1999-08-23 株式会社日立製作所 広帯域ビデオ出力回路
EP1081573B1 (en) * 1999-08-31 2003-04-09 STMicroelectronics S.r.l. High-precision biasing circuit for a cascoded CMOS stage, particularly for low noise amplifiers
US6744322B1 (en) * 2002-01-23 2004-06-01 Skyworks Solutions, Inc. High performance BiFET low noise amplifier

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4053841A (en) * 1976-09-13 1977-10-11 Rca Corporation Microwave frequency discriminator comprising an FET amplifier
JPS54177228U (US06229276-20010508-P00022.png) * 1978-06-01 1979-12-14
US4432967A (en) * 1982-06-25 1984-02-21 National Starch And Chemical Corp. Contraceptive composition
US4464636A (en) * 1983-01-05 1984-08-07 Zenith Electronics Corporation Wideband IF amplifier with complementary GaAs FET-bipolar transistor combination

Also Published As

Publication number Publication date
JPS58202607A (ja) 1983-11-25
US4528520A (en) 1985-07-09

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