JPH0542166B2 - - Google Patents
Info
- Publication number
- JPH0542166B2 JPH0542166B2 JP57084706A JP8470682A JPH0542166B2 JP H0542166 B2 JPH0542166 B2 JP H0542166B2 JP 57084706 A JP57084706 A JP 57084706A JP 8470682 A JP8470682 A JP 8470682A JP H0542166 B2 JPH0542166 B2 JP H0542166B2
- Authority
- JP
- Japan
- Prior art keywords
- output
- circuit
- transistor
- capacitance
- inductance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57084706A JPS58202607A (ja) | 1982-05-21 | 1982-05-21 | 増幅器 |
US06/495,495 US4528520A (en) | 1982-05-21 | 1983-05-17 | Wide band high output amplifier using a power field effect transistor as an output stage |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57084706A JPS58202607A (ja) | 1982-05-21 | 1982-05-21 | 増幅器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58202607A JPS58202607A (ja) | 1983-11-25 |
JPH0542166B2 true JPH0542166B2 (US06229276-20010508-P00022.png) | 1993-06-25 |
Family
ID=13838098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57084706A Granted JPS58202607A (ja) | 1982-05-21 | 1982-05-21 | 増幅器 |
Country Status (2)
Country | Link |
---|---|
US (1) | US4528520A (US06229276-20010508-P00022.png) |
JP (1) | JPS58202607A (US06229276-20010508-P00022.png) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61134107A (ja) * | 1984-12-05 | 1986-06-21 | Nec Corp | 増幅器 |
JPS62104303A (ja) * | 1985-10-31 | 1987-05-14 | Nec Corp | 広帯域負帰還増幅回路 |
EP0320540B1 (en) * | 1987-12-14 | 1993-09-08 | SEGAL, Brahm | An audio amplifier |
US4821706A (en) * | 1987-10-15 | 1989-04-18 | North American Philips Corporation | High voltage pulse power drive |
EP0331778B1 (en) * | 1988-03-09 | 1992-01-15 | Hewlett-Packard GmbH | Output amplifier |
JP2936849B2 (ja) * | 1991-12-10 | 1999-08-23 | 株式会社日立製作所 | 広帯域ビデオ出力回路 |
EP1081573B1 (en) * | 1999-08-31 | 2003-04-09 | STMicroelectronics S.r.l. | High-precision biasing circuit for a cascoded CMOS stage, particularly for low noise amplifiers |
US6744322B1 (en) * | 2002-01-23 | 2004-06-01 | Skyworks Solutions, Inc. | High performance BiFET low noise amplifier |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4053841A (en) * | 1976-09-13 | 1977-10-11 | Rca Corporation | Microwave frequency discriminator comprising an FET amplifier |
JPS54177228U (US06229276-20010508-P00022.png) * | 1978-06-01 | 1979-12-14 | ||
US4432967A (en) * | 1982-06-25 | 1984-02-21 | National Starch And Chemical Corp. | Contraceptive composition |
US4464636A (en) * | 1983-01-05 | 1984-08-07 | Zenith Electronics Corporation | Wideband IF amplifier with complementary GaAs FET-bipolar transistor combination |
-
1982
- 1982-05-21 JP JP57084706A patent/JPS58202607A/ja active Granted
-
1983
- 1983-05-17 US US06/495,495 patent/US4528520A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS58202607A (ja) | 1983-11-25 |
US4528520A (en) | 1985-07-09 |
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