JPH0527996B2 - - Google Patents

Info

Publication number
JPH0527996B2
JPH0527996B2 JP1013185A JP1013185A JPH0527996B2 JP H0527996 B2 JPH0527996 B2 JP H0527996B2 JP 1013185 A JP1013185 A JP 1013185A JP 1013185 A JP1013185 A JP 1013185A JP H0527996 B2 JPH0527996 B2 JP H0527996B2
Authority
JP
Japan
Prior art keywords
region
type
source
semiconductor substrate
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1013185A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61170068A (ja
Inventor
Kazunari Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON DENKI AISHII MAIKON SHISUTEMU KK
Original Assignee
NIPPON DENKI AISHII MAIKON SHISUTEMU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON DENKI AISHII MAIKON SHISUTEMU KK filed Critical NIPPON DENKI AISHII MAIKON SHISUTEMU KK
Priority to JP1013185A priority Critical patent/JPS61170068A/ja
Publication of JPS61170068A publication Critical patent/JPS61170068A/ja
Publication of JPH0527996B2 publication Critical patent/JPH0527996B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
JP1013185A 1985-01-23 1985-01-23 Ｍｏｓトランジスタ Granted JPS61170068A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1013185A JPS61170068A (ja) 1985-01-23 1985-01-23 Ｍｏｓトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1013185A JPS61170068A (ja) 1985-01-23 1985-01-23 Ｍｏｓトランジスタ

Publications (2)

Publication Number Publication Date
JPS61170068A JPS61170068A (ja) 1986-07-31
JPH0527996B2 true JPH0527996B2 (fr) 1993-04-22

Family

ID=11741730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1013185A Granted JPS61170068A (ja) 1985-01-23 1985-01-23 Ｍｏｓトランジスタ

Country Status (1)

Country Link
JP (1) JPS61170068A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023196A (en) * 1990-01-29 1991-06-11 Motorola Inc. Method for forming a MOSFET with substrate source contact
EP0469158B1 (fr) * 1990-02-22 1996-12-27 Nkk Corporation Detecteur magnetique de defauts pour mince bande en acier
US5512821A (en) * 1991-06-04 1996-04-30 Nkk Corporation Method and apparatus for magnetically detecting defects in an object with compensation for magnetic field shift by means of a compensating coil

Also Published As

Publication number Publication date
JPS61170068A (ja) 1986-07-31

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