JPH0513017Y2 - - Google Patents
Info
- Publication number
- JPH0513017Y2 JPH0513017Y2 JP1985152649U JP15264985U JPH0513017Y2 JP H0513017 Y2 JPH0513017 Y2 JP H0513017Y2 JP 1985152649 U JP1985152649 U JP 1985152649U JP 15264985 U JP15264985 U JP 15264985U JP H0513017 Y2 JPH0513017 Y2 JP H0513017Y2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- gate
- metal layer
- conductive metal
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985152649U JPH0513017Y2 (en:Method) | 1985-10-04 | 1985-10-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985152649U JPH0513017Y2 (en:Method) | 1985-10-04 | 1985-10-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6260049U JPS6260049U (en:Method) | 1987-04-14 |
| JPH0513017Y2 true JPH0513017Y2 (en:Method) | 1993-04-06 |
Family
ID=31070819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985152649U Expired - Lifetime JPH0513017Y2 (en:Method) | 1985-10-04 | 1985-10-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0513017Y2 (en:Method) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2548160B2 (ja) * | 1987-01-09 | 1996-10-30 | 松下電子工業株式会社 | 半導体装置 |
| WO2004107383A1 (ja) * | 2003-01-09 | 2004-12-09 | Matsushita Electric Industrial Co., Ltd. | Misfet |
| US8367508B2 (en) * | 2010-04-09 | 2013-02-05 | International Business Machines Corporation | Self-aligned contacts for field effect transistor devices |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55113375A (en) * | 1979-02-23 | 1980-09-01 | Hitachi Ltd | Insulated gate type field effect semiconductor device |
| JPS6089974A (ja) * | 1983-10-24 | 1985-05-20 | Toshiba Corp | 半導体装置 |
-
1985
- 1985-10-04 JP JP1985152649U patent/JPH0513017Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6260049U (en:Method) | 1987-04-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR930020666A (ko) | 수직형 집적 반도체 구조체 | |
| JP3593371B2 (ja) | 絶縁ゲート半導体装置 | |
| KR840002162A (ko) | 반도체 장치(半導體裝置) | |
| JPH0513017Y2 (en:Method) | ||
| KR960009022A (ko) | 자체정렬된 실리사이드 영역을 갖는 반도체 디바이스의 제조 방법 | |
| JPH02862B2 (en:Method) | ||
| US5270566A (en) | Insulated gate semiconductor device | |
| JPS59130455A (ja) | Mosトランジスタ集積回路 | |
| JPS6313352B2 (en:Method) | ||
| JP2504498B2 (ja) | 半導体装置 | |
| JPH1070198A5 (en:Method) | ||
| JP3217484B2 (ja) | 高耐圧半導体装置 | |
| JP2526536Y2 (ja) | 半導体装置 | |
| JPS59112944U (ja) | 集積回路 | |
| JPH065751B2 (ja) | 絶縁ゲート電界効果トランジスタ | |
| JPS60124863A (ja) | Mos集積回路装置 | |
| JPH03191577A (ja) | 絶縁ゲート電界効果トランジスタ | |
| JPH07263681A (ja) | 電界効果トランジスタ | |
| JP2993041B2 (ja) | 相補型mos半導体装置 | |
| JPH07122743A (ja) | 半導体集積回路装置およびその製造方法 | |
| JPH024136B2 (en:Method) | ||
| JPH03238867A (ja) | 絶縁ゲート型電界効果トランジスタ | |
| JPH0377463U (en:Method) | ||
| JPS63192249A (ja) | 半導体集積回路装置 | |
| JPH0614547B2 (ja) | パワーmosfet |