JPH0513017Y2 - - Google Patents
Info
- Publication number
- JPH0513017Y2 JPH0513017Y2 JP1985152649U JP15264985U JPH0513017Y2 JP H0513017 Y2 JPH0513017 Y2 JP H0513017Y2 JP 1985152649 U JP1985152649 U JP 1985152649U JP 15264985 U JP15264985 U JP 15264985U JP H0513017 Y2 JPH0513017 Y2 JP H0513017Y2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- gate
- metal layer
- conductive metal
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 229920005591 polysilicon Polymers 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 230000008054 signal transmission Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985152649U JPH0513017Y2 (US08197722-20120612-C00042.png) | 1985-10-04 | 1985-10-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985152649U JPH0513017Y2 (US08197722-20120612-C00042.png) | 1985-10-04 | 1985-10-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6260049U JPS6260049U (US08197722-20120612-C00042.png) | 1987-04-14 |
| JPH0513017Y2 true JPH0513017Y2 (US08197722-20120612-C00042.png) | 1993-04-06 |
Family
ID=31070819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985152649U Expired - Lifetime JPH0513017Y2 (US08197722-20120612-C00042.png) | 1985-10-04 | 1985-10-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0513017Y2 (US08197722-20120612-C00042.png) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2548160B2 (ja) * | 1987-01-09 | 1996-10-30 | 松下電子工業株式会社 | 半導体装置 |
| WO2004107383A1 (ja) * | 2003-01-09 | 2004-12-09 | Matsushita Electric Industrial Co., Ltd. | Misfet |
| US8367508B2 (en) * | 2010-04-09 | 2013-02-05 | International Business Machines Corporation | Self-aligned contacts for field effect transistor devices |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55113375A (en) * | 1979-02-23 | 1980-09-01 | Hitachi Ltd | Insulated gate type field effect semiconductor device |
| JPS6089974A (ja) * | 1983-10-24 | 1985-05-20 | Toshiba Corp | 半導体装置 |
-
1985
- 1985-10-04 JP JP1985152649U patent/JPH0513017Y2/ja not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55113375A (en) * | 1979-02-23 | 1980-09-01 | Hitachi Ltd | Insulated gate type field effect semiconductor device |
| JPS6089974A (ja) * | 1983-10-24 | 1985-05-20 | Toshiba Corp | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6260049U (US08197722-20120612-C00042.png) | 1987-04-14 |
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