JPH0423832B2 - - Google Patents

Info

Publication number
JPH0423832B2
JPH0423832B2 JP58015661A JP1566183A JPH0423832B2 JP H0423832 B2 JPH0423832 B2 JP H0423832B2 JP 58015661 A JP58015661 A JP 58015661A JP 1566183 A JP1566183 A JP 1566183A JP H0423832 B2 JPH0423832 B2 JP H0423832B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
silicon
memory cell
silicon dioxide
insulating material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58015661A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59141262A (ja
Inventor
Toshuki Ishijima
Masaaki Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58015661A priority Critical patent/JPS59141262A/ja
Publication of JPS59141262A publication Critical patent/JPS59141262A/ja
Publication of JPH0423832B2 publication Critical patent/JPH0423832B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP58015661A 1983-02-02 1983-02-02 半導体メモリセル Granted JPS59141262A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58015661A JPS59141262A (ja) 1983-02-02 1983-02-02 半導体メモリセル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58015661A JPS59141262A (ja) 1983-02-02 1983-02-02 半導体メモリセル

Publications (2)

Publication Number Publication Date
JPS59141262A JPS59141262A (ja) 1984-08-13
JPH0423832B2 true JPH0423832B2 (enrdf_load_stackoverflow) 1992-04-23

Family

ID=11894920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58015661A Granted JPS59141262A (ja) 1983-02-02 1983-02-02 半導体メモリセル

Country Status (1)

Country Link
JP (1) JPS59141262A (enrdf_load_stackoverflow)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0666436B2 (ja) * 1983-04-15 1994-08-24 株式会社日立製作所 半導体集積回路装置
JPS59191374A (ja) * 1983-04-15 1984-10-30 Hitachi Ltd 半導体集積回路装置
JPH0793366B2 (ja) * 1984-10-08 1995-10-09 日本電信電話株式会社 半導体メモリおよびその製造方法
USRE33261E (en) * 1984-07-03 1990-07-10 Texas Instruments, Incorporated Trench capacitor for high density dynamic RAM
JPS6155957A (ja) * 1984-08-27 1986-03-20 Toshiba Corp 半導体記憶装置
JPS6187359A (ja) * 1984-10-05 1986-05-02 Nec Corp 半導体メモリセル
JPS6187358A (ja) * 1984-10-05 1986-05-02 Nec Corp 半導体記憶装置およびその製造方法
JPS6188555A (ja) * 1984-10-08 1986-05-06 Nec Corp 半導体メモリセル
JPS61150366A (ja) * 1984-12-25 1986-07-09 Nec Corp Ｍｉｓ型メモリ−セル
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US4673962A (en) * 1985-03-21 1987-06-16 Texas Instruments Incorporated Vertical DRAM cell and method
JP2615541B2 (ja) * 1985-03-22 1997-05-28 富士通株式会社 半導体装置の製造方法
JPS61288460A (ja) * 1985-06-17 1986-12-18 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置およびその製造方法
JPS61288461A (ja) * 1985-06-17 1986-12-18 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とその製造方法
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
JPS6221266A (ja) * 1985-07-19 1987-01-29 Sanyo Electric Co Ltd 半導体メモリセル
JPS6239053A (ja) * 1985-08-14 1987-02-20 Nec Corp 半導体メモリセル及びその製造方法
JPH0750745B2 (ja) * 1985-10-03 1995-05-31 株式会社日立製作所 半導体装置
JPH0642533B2 (ja) * 1985-10-16 1994-06-01 三菱電機株式会社 半導体記憶装置
JPH0824164B2 (ja) * 1985-11-18 1996-03-06 テキサス インスツルメンツ インコ−ポレイテツド 相互接続部を形成する方法
JP2574231B2 (ja) * 1985-12-03 1997-01-22 松下電子工業株式会社 半導体メモリ装置
US4801989A (en) * 1986-02-20 1989-01-31 Fujitsu Limited Dynamic random access memory having trench capacitor with polysilicon lined lower electrode
JPS62208658A (ja) * 1986-02-20 1987-09-12 Fujitsu Ltd ダイナミツクランダムアクセスメモリ
JPH0797621B2 (ja) * 1986-03-03 1995-10-18 富士通株式会社 ダイナミツクランダムアクセスメモリ
JPH0685428B2 (ja) * 1986-03-14 1994-10-26 富士通株式会社 ダイナミツクランダムアクセスメモリ
JPH0685426B2 (ja) * 1986-03-03 1994-10-26 富士通株式会社 ダイナミツクランダムアクセスメモリ
JPH0797622B2 (ja) * 1986-03-03 1995-10-18 富士通株式会社 半導体メモリ
US4785337A (en) * 1986-10-17 1988-11-15 International Business Machines Corporation Dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes
US4916524A (en) * 1987-03-16 1990-04-10 Texas Instruments Incorporated Dram cell and method
JPH0795568B2 (ja) * 1987-04-27 1995-10-11 日本電気株式会社 半導体記憶装置
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
JPH01154551A (ja) * 1987-12-11 1989-06-16 Oki Electric Ind Co Ltd 半導体メモリ集積回路装置及びその製造方法
US4958206A (en) * 1988-06-28 1990-09-18 Texas Instruments Incorporated Diffused bit line trench capacitor dram cell
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
WO1990011619A1 (en) * 1989-03-23 1990-10-04 Grumman Aerospace Corporation Single trench mosfet-capacitor cell for analog signal processing
US5275974A (en) * 1992-07-30 1994-01-04 Northern Telecom Limited Method of forming electrodes for trench capacitors

Also Published As

Publication number Publication date
JPS59141262A (ja) 1984-08-13

Similar Documents

Publication Publication Date Title
JPH0423832B2 (enrdf_load_stackoverflow)
US6906372B2 (en) Semiconductor device with vertical transistor formed in a silicon-on-insulator substrate
US6350635B1 (en) Memory cell having a vertical transistor with buried source/drain and dual gates
EP0337436A2 (en) Semiconductor memory device having improved dynamic memory cell structure
JPH0682800B2 (ja) 半導体記憶装置
JPH077084A (ja) 半導体メモリ装置及びその製造方法
US5034787A (en) Structure and fabrication method for a double trench memory cell device
JPH11238860A (ja) 半導体集積回路装置およびその製造方法
JPH0682793B2 (ja) 半導体メモリ
JPS6187358A (ja) 半導体記憶装置およびその製造方法
US5914510A (en) Semiconductor memory device and method of manufacturing the same
JPH0673368B2 (ja) 半導体記憶装置およびその製造方法
JP3421230B2 (ja) 半導体記憶装置およびその製造方法
US7208799B2 (en) Floating body cell dynamic random access memory with optimized body geometry
US6054345A (en) Method for forming deep depletion mode dynamic random access memory (DRAM) cell
JP2574231B2 (ja) 半導体メモリ装置
KR20020058011A (ko) 하나 이상의 커패시터 및 이것에 접속된 하나 이상의트랜지스터를 구비한 회로 장치
JPH0795585B2 (ja) 半導体記憶装置およびその製造方法
JP3070537B2 (ja) 半導体装置およびその製造方法
JPH08274275A (ja) 半導体装置およびその製造方法
JPH0370381B2 (enrdf_load_stackoverflow)
JPH0370382B2 (enrdf_load_stackoverflow)
JPS61234557A (ja) 半導体記憶装置およびその製造方法
JPH079943B2 (ja) 半導体記憶装置およびその製造方法
JP3000738B2 (ja) 半導体メモリセルおよびその製造方法