JPH0423415B2 - - Google Patents

Info

Publication number
JPH0423415B2
JPH0423415B2 JP61261830A JP26183086A JPH0423415B2 JP H0423415 B2 JPH0423415 B2 JP H0423415B2 JP 61261830 A JP61261830 A JP 61261830A JP 26183086 A JP26183086 A JP 26183086A JP H0423415 B2 JPH0423415 B2 JP H0423415B2
Authority
JP
Japan
Prior art keywords
ray
mirror
synchrotron radiation
mask
exposure apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61261830A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63116424A (ja
Inventor
Kyoshi Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP61261830A priority Critical patent/JPS63116424A/ja
Priority to US07/116,816 priority patent/US4803713A/en
Publication of JPS63116424A publication Critical patent/JPS63116424A/ja
Publication of JPH0423415B2 publication Critical patent/JPH0423415B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP61261830A 1986-11-05 1986-11-05 Ｘ線露光装置 Granted JPS63116424A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP61261830A JPS63116424A (ja) 1986-11-05 1986-11-05 Ｘ線露光装置
US07/116,816 US4803713A (en) 1986-11-05 1987-11-05 X-ray lighography system using synchrotron radiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61261830A JPS63116424A (ja) 1986-11-05 1986-11-05 Ｘ線露光装置

Publications (2)

Publication Number Publication Date
JPS63116424A JPS63116424A (ja) 1988-05-20
JPH0423415B2 true JPH0423415B2 (enExample) 1992-04-22

Family

ID=17367326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61261830A Granted JPS63116424A (ja) 1986-11-05 1986-11-05 Ｘ線露光装置

Country Status (2)

Country Link
US (1) US4803713A (enExample)
JP (1) JPS63116424A (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0196600A (ja) * 1987-10-09 1989-04-14 Hitachi Ltd Ｘ線露光装置
US5276725A (en) * 1988-05-10 1994-01-04 Canon Kabushiki Kaisha Exposure system
JP2627543B2 (ja) * 1988-09-05 1997-07-09 キヤノン株式会社 Ｓｏｒ露光システム
US4979195A (en) * 1988-09-22 1990-12-18 Fujitsu Limited Vertical stepper
JP2728898B2 (ja) * 1988-10-05 1998-03-18 キヤノン株式会社 露光装置
JP2770960B2 (ja) * 1988-10-06 1998-07-02 キヤノン株式会社 Ｓｏｒ−ｘ線露光装置
EP0422814B1 (en) * 1989-10-02 1999-03-17 Canon Kabushiki Kaisha Exposure apparatus
US5892810A (en) * 1990-05-09 1999-04-06 The United States Of America As Represented By The Secretary Of The Navy X-ray source for lithography
JPH0431799A (ja) * 1990-05-28 1992-02-03 Sumitomo Heavy Ind Ltd シンクロトロン放射光収束偏向装置
DE4117639A1 (de) * 1990-05-31 1991-12-05 Toshiba Kawasaki Kk Synchrotronstrahlungsgeraet
US5031199A (en) * 1990-06-05 1991-07-09 Wisconsin Alumni Research Foundation X-ray lithography beamline method and apparatus
US5214685A (en) * 1991-10-08 1993-05-25 Maxwell Laboratories, Inc. X-ray lithography mirror and method of making same
US5432831A (en) * 1992-09-10 1995-07-11 Olympus Optical Co., Ltd. Vacuum optical system
US5268951A (en) * 1992-12-22 1993-12-07 International Business Machines Corporation X-ray beam scanning method for producing low distortion or constant distortion in x-ray proximity printing
US5371774A (en) * 1993-06-24 1994-12-06 Wisconsin Alumni Research Foundation X-ray lithography beamline imaging system
US5509041A (en) * 1994-06-30 1996-04-16 Motorola, Inc. X-ray lithography method for irradiating an object to form a pattern thereon
DE102008000967B4 (de) * 2008-04-03 2015-04-09 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die EUV-Mikrolithographie
DE102023206272A1 (de) * 2023-07-03 2025-01-09 Carl Zeiss Smt Gmbh Spiegel-Baugruppe, Beleuchtungsoptik mit einer Spiegel-Baugruppe, Beleuchtungssystem mit einer derartigen Beleuchtungsoptik und Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59101833A (ja) * 1982-12-03 1984-06-12 Hitachi Ltd Ｘ線露光装置
JPS62222634A (ja) * 1986-03-18 1987-09-30 Fujitsu Ltd Ｘ線露光方法

Also Published As

Publication number Publication date
JPS63116424A (ja) 1988-05-20
US4803713A (en) 1989-02-07

Similar Documents

Publication Publication Date Title
JPH0423415B2 (enExample)
US4677301A (en) Alignment apparatus
JPS6324618A (ja) 露光方法
JPS63283022A (ja) Ｘ線リソグラフイの投影スケール変更方法および装置
US4514857A (en) X-Ray lithographic system
JPH037138B2 (enExample)
JPH01243519A (ja) 露光装置と露光方法
JPH0588355A (ja) 反射型マスク及びそれを用いた露光装置
JPH03504285A (ja) Ｘ線リソグラフイの投影スケール変更方法
JPS6030131A (ja) 電子ビ−ム露光装置
JP2980397B2 (ja) Ｘ線露光装置
JP3080694B2 (ja) 露光装置
JPH0359569B2 (enExample)
JPH059935B2 (enExample)
JP3013341B2 (ja) Ｘ線照射用光学系及びそれを用いたｘ線投影露光装置
JPH06333801A (ja) 露光装置
JPH022999A (ja) Ｘ線露光装置
JPH0246717A (ja) Ｘ線露光方法
JPH058855B2 (enExample)
JPH0193120A (ja) 縮小投影露光装置および方法
JPS6084814A (ja) Ｘ線投射装置
JP2003124093A (ja) ギャップ調節装置及び調節方法
JPH0225851A (ja) 露光方法
JPH034200A (ja) 放射光露光装置
JPH054604B2 (enExample)