JPH041340B2 - - Google Patents
Info
- Publication number
- JPH041340B2 JPH041340B2 JP60025660A JP2566085A JPH041340B2 JP H041340 B2 JPH041340 B2 JP H041340B2 JP 60025660 A JP60025660 A JP 60025660A JP 2566085 A JP2566085 A JP 2566085A JP H041340 B2 JPH041340 B2 JP H041340B2
- Authority
- JP
- Japan
- Prior art keywords
- photoresist composition
- mol
- resist
- cresol
- novolak resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 claims description 25
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- 229920003986 novolac Polymers 0.000 claims description 17
- 229920005989 resin Polymers 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 13
- 239000003504 photosensitizing agent Substances 0.000 claims description 11
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 claims description 10
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 claims description 9
- 229940100630 metacresol Drugs 0.000 claims description 9
- ALVGSDOIXRPZFH-UHFFFAOYSA-N [(1-diazonioimino-3,4-dioxonaphthalen-2-ylidene)hydrazinylidene]azanide Chemical compound C1=CC=C2C(=N[N+]#N)C(=NN=[N-])C(=O)C(=O)C2=C1 ALVGSDOIXRPZFH-UHFFFAOYSA-N 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- 150000002148 esters Chemical class 0.000 claims description 3
- FNUVBEYTIKWZLQ-UHFFFAOYSA-N [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1(C(C=CC2=CC=CC=C12)=O)=O.OC1=C(C(=O)C2=CC=C(C=C2)O)C=CC(=C1O)O Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1(C(C=CC2=CC=CC=C12)=O)=O.OC1=C(C(=O)C2=CC=C(C=C2)O)C=CC(=C1O)O FNUVBEYTIKWZLQ-UHFFFAOYSA-N 0.000 claims description 2
- 125000002256 xylenyl group Chemical class C1(C(C=CC=C1)C)(C)* 0.000 claims 2
- NKTOLZVEWDHZMU-UHFFFAOYSA-N 2,5-xylenol Chemical compound CC1=CC=C(C)C(O)=C1 NKTOLZVEWDHZMU-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- ZRDYULMDEGRWRC-UHFFFAOYSA-N (4-hydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C(O)=C1O ZRDYULMDEGRWRC-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000032050 esterification Effects 0.000 description 3
- 238000005886 esterification reaction Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 3
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical group 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical class [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 229910052911 sodium silicate Inorganic materials 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- 150000003739 xylenols Chemical class 0.000 description 2
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 description 1
- 229940105324 1,2-naphthoquinone Drugs 0.000 description 1
- QPVRKFOKCKORDP-UHFFFAOYSA-N 1,3-dimethylcyclohexa-2,4-dien-1-ol Chemical compound CC1=CC(C)(O)CC=C1 QPVRKFOKCKORDP-UHFFFAOYSA-N 0.000 description 1
- KGWYICAEPBCRBL-UHFFFAOYSA-N 1h-indene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)C=CC2=C1 KGWYICAEPBCRBL-UHFFFAOYSA-N 0.000 description 1
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229940072049 amyl acetate Drugs 0.000 description 1
- PGMYKACGEOXYJE-UHFFFAOYSA-N anhydrous amyl acetate Natural products CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- -1 ester compound Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- CCGKOQOJPYTBIH-UHFFFAOYSA-N ethenone Chemical compound C=C=O CCGKOQOJPYTBIH-UHFFFAOYSA-N 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- MNWFXJYAOYHMED-UHFFFAOYSA-M heptanoate Chemical compound CCCCCCC([O-])=O MNWFXJYAOYHMED-UHFFFAOYSA-M 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004811 liquid chromatography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical compound [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Phenolic Resins Or Amino Resins (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60025660A JPS61185741A (ja) | 1985-02-13 | 1985-02-13 | ポジ型フオトレジスト組成物 |
| US06/825,902 US4719167A (en) | 1985-02-13 | 1986-02-04 | Positive photoresist composition with 1,2 naphthoquinone diazide and novolak resin condensed from mixture of m-cresol, p-cresol, and 2,5-xylenol with formaldehyde |
| DE3603372A DE3603372C2 (de) | 1985-02-13 | 1986-02-05 | Positiv wirkendes lichtempfindliches Gemisch |
| US07/023,689 US4859563A (en) | 1985-02-13 | 1987-03-09 | Positive photoresist composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60025660A JPS61185741A (ja) | 1985-02-13 | 1985-02-13 | ポジ型フオトレジスト組成物 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61185741A JPS61185741A (ja) | 1986-08-19 |
| JPH041340B2 true JPH041340B2 (en, 2012) | 1992-01-10 |
Family
ID=12171961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60025660A Granted JPS61185741A (ja) | 1985-02-13 | 1985-02-13 | ポジ型フオトレジスト組成物 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US4719167A (en, 2012) |
| JP (1) | JPS61185741A (en, 2012) |
| DE (1) | DE3603372C2 (en, 2012) |
Families Citing this family (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61185741A (ja) * | 1985-02-13 | 1986-08-19 | Mitsubishi Chem Ind Ltd | ポジ型フオトレジスト組成物 |
| CA1279430C (en) * | 1985-12-06 | 1991-01-22 | Takashi Kubota | High-molecular-weight soluble novolak resin and process for preparation thereof |
| DE3686032T2 (de) * | 1985-12-27 | 1993-02-18 | Japan Synthetic Rubber Co Ltd | Strahlungsempfindliche positiv arbeitende kunststoffzusammensetzung. |
| EP0239423B1 (en) * | 1986-03-28 | 1996-03-20 | Japan Synthetic Rubber Co., Ltd. | Positive type radiation-sensitive resin composition |
| JPH0654388B2 (ja) * | 1986-05-02 | 1994-07-20 | 東京応化工業株式会社 | ポジ型ホトレジスト組成物 |
| JPS6343134A (ja) * | 1986-08-11 | 1988-02-24 | Mitsubishi Chem Ind Ltd | ポジ型フオトレジスト組成物 |
| JP2590342B2 (ja) * | 1986-11-08 | 1997-03-12 | 住友化学工業株式会社 | ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物 |
| US5128230A (en) * | 1986-12-23 | 1992-07-07 | Shipley Company Inc. | Quinone diazide containing photoresist composition utilizing mixed solvent of ethyl lactate, anisole and amyl acetate |
| JP2729284B2 (ja) * | 1986-12-23 | 1998-03-18 | シップレー・カンパニー・インコーポレーテッド | フォトレジスト方法及びこの方法に用いる組成物 |
| US5182183A (en) * | 1987-03-12 | 1993-01-26 | Mitsubishi Kasei Corporation | Positive photosensitive planographic printing plates containing specific high-molecular weight compound and photosensitive ester of O-napthoquinonediazidosulfonic acid with polyhydroxybenzophenone |
| EP0293704A3 (de) * | 1987-06-01 | 1989-02-15 | Hoechst Celanese Corporation | Aufzeichnungsmaterial mit einer wasserlöslichen Kontrastverstärkungsschicht |
| JPS63311350A (ja) * | 1987-06-15 | 1988-12-20 | Hitachi Ltd | 感光性組成物 |
| JPS6449038A (en) * | 1987-08-19 | 1989-02-23 | Mitsubishi Chem Ind | Positive type photoresist composition |
| US4873176A (en) * | 1987-08-28 | 1989-10-10 | Shipley Company Inc. | Reticulation resistant photoresist coating |
| JP2816677B2 (ja) * | 1987-10-05 | 1998-10-27 | 三菱化学株式会社 | キノンジアジド系感光性化合物の製造方法 |
| JP2693472B2 (ja) * | 1987-11-26 | 1997-12-24 | 株式会社東芝 | レジスト |
| GB2212933B (en) * | 1987-11-27 | 1991-10-16 | Tokyo Ohka Kogyo Co Ltd | A positive-working photoresist composition |
| JP2692241B2 (ja) * | 1988-02-26 | 1997-12-17 | 三菱電機株式会社 | レジストパターンの形成方法 |
| DE3810631A1 (de) * | 1988-03-29 | 1989-10-12 | Hoechst Ag | Positiv arbeitendes lichtempfindliches gemisch und daraus hergestelltes aufzeichnungsmaterial mit hohem waermestand |
| DE3842896C2 (de) * | 1988-04-22 | 1998-07-02 | Tokyo Ohka Kogyo Co Ltd | Positiv arbeitende lichtempfindliche Zusammensetzung |
| JP2715480B2 (ja) * | 1988-10-13 | 1998-02-18 | 住友化学工業株式会社 | ポジ型レジスト用組成物 |
| US5753406A (en) * | 1988-10-18 | 1998-05-19 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive resin composition |
| US5342727A (en) * | 1988-10-21 | 1994-08-30 | Hoechst Celanese Corp. | Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene in admixture with a photosensitizer to form a photosensitive composition |
| JP2697039B2 (ja) * | 1988-12-06 | 1998-01-14 | 住友化学工業株式会社 | ポジ型レジスト組成物の製造方法 |
| JPH02222954A (ja) * | 1989-02-23 | 1990-09-05 | Chisso Corp | ポジ型フォトレジスト組成物およびレジストパターンの形成方法 |
| JPH02254450A (ja) * | 1989-03-29 | 1990-10-15 | Toshiba Corp | レジスト |
| US5069996A (en) * | 1989-07-24 | 1991-12-03 | Ocg Microelectronic Materials, Inc. | Process for developing selected positive photoresists |
| US5288587A (en) * | 1989-09-05 | 1994-02-22 | Sumitomo Chemical Co., Ltd. | Radiation-sensitive positive resist composition comprising an o-quinone diazide, an alkali-soluble resin and a polyphenol compound |
| US5324620A (en) * | 1989-09-08 | 1994-06-28 | Ocg Microeletronic Materials, Inc. | Radiation-sensitive compositions containing novolak polymers made from four phenolic derivatives and an aldehyde |
| US5322757A (en) * | 1989-09-08 | 1994-06-21 | Ocg Microelectronic Materials, Inc. | Positive photoresists comprising a novolak resin made from 2,3-dimethyl phenol,2,3,5-trimethylphenol and aldehyde with no meta-cresol present |
| DE69032744T2 (de) * | 1989-09-08 | 1999-06-02 | Olin Microelectronic Chemicals, Inc., Norwalk, Conn. | Vollständig substituierte novalak-polymere enthaltende strahlungsempfindliche zusammensetzungen |
| JP2571136B2 (ja) * | 1989-11-17 | 1997-01-16 | 日本ゼオン株式会社 | ポジ型レジスト組成物 |
| CA2029464A1 (en) * | 1989-12-20 | 1991-06-21 | Sangya Jain | Positive photoresist composition |
| JP2761786B2 (ja) * | 1990-02-01 | 1998-06-04 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
| DE69129955T2 (de) * | 1990-05-02 | 1998-12-24 | Mitsubishi Chemical Corp., Tokio/Tokyo | Photolackzusammensetzung |
| US5225318A (en) * | 1990-07-02 | 1993-07-06 | Ocg Microelectronic Materials, Inc. | Selected photoactive methylolated cyclohexanol compounds and their use in forming positive resist image patterns |
| US5151340A (en) * | 1990-07-02 | 1992-09-29 | Ocg Microelectronic Materials, Inc. | Selected photoactive methylolated cyclohexanol compounds and their use in radiation-sensitive mixtures |
| US5413896A (en) * | 1991-01-24 | 1995-05-09 | Japan Synthetic Rubber Co., Ltd. | I-ray sensitive positive resist composition |
| JP2976597B2 (ja) * | 1991-04-17 | 1999-11-10 | 住友化学工業株式会社 | キノンジアジドスルホン酸エステルの製造方法 |
| US5372909A (en) * | 1991-09-24 | 1994-12-13 | Mitsubishi Kasei Corporation | Photosensitive resin composition comprising an alkali-soluble resin made from a phenolic compound and at least 2 different aldehydes |
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| JP2626468B2 (ja) * | 1993-04-30 | 1997-07-02 | 日本合成ゴム株式会社 | ポジ型感放射線性樹脂組成物 |
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| KR100305333B1 (ko) * | 1993-10-28 | 2001-11-22 | 마티네즈 길러모 | 감광성수지조성물및이를사용한패턴의형성방법 |
| US5739265A (en) * | 1995-09-20 | 1998-04-14 | Clariant Finance (Bvi) Ltd. | Fractionation of phenol formaldehyde condensate and photoresist compositions produced therefrom |
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| US5645970A (en) * | 1995-10-25 | 1997-07-08 | Industrial Technology Research Institute | Weak base developable positive photoresist composition containing quinonediazide compound |
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| KR20060090519A (ko) * | 2005-02-07 | 2006-08-11 | 삼성전자주식회사 | 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한층상 부재 형성 방법 및 박막 트랜지스터 표시판의 제조방법 |
| JP5137410B2 (ja) * | 2006-06-09 | 2013-02-06 | キヤノン株式会社 | 感光性化合物、感光性組成物、レジストパターンの形成方法及び基板の加工方法 |
| US7776509B2 (en) | 2007-02-06 | 2010-08-17 | Canon Kabushiki Kaisha | Photosensitive compound, photosensitive composition, resist pattern forming method, and device production process |
| US7615332B2 (en) * | 2007-02-06 | 2009-11-10 | Canon Kabushiki Kaisha | Photosensitive compound, photosensitive composition, resist pattern forming method, and device production process |
| JP2008201724A (ja) * | 2007-02-20 | 2008-09-04 | Canon Inc | 感光性化合物、感光性組成物、レジストパターンの形成方法及び基板の加工方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE938233C (de) * | 1953-03-11 | 1956-01-26 | Kalle & Co Ag | Lichtempfindliches Material fuer die photomechanische Herstellung von Druckformen |
| US3424315A (en) * | 1967-11-28 | 1969-01-28 | Paul L Farren | Tilt shelf |
| US3647443A (en) * | 1969-09-12 | 1972-03-07 | Eastman Kodak Co | Light-sensitive quinone diazide polymers and polymer compositions |
| US3868254A (en) * | 1972-11-29 | 1975-02-25 | Gaf Corp | Positive working quinone diazide lithographic plate compositions and articles having non-ionic surfactants |
| DE2616992C3 (de) * | 1976-04-17 | 1987-10-22 | Agfa-Gevaert Ag, 5090 Leverkusen | Lichtempfindliches Kopiermaterial zur Herstellung von Reliefs |
| US4173470A (en) * | 1977-11-09 | 1979-11-06 | Bell Telephone Laboratories, Incorporated | Novolak photoresist composition and preparation thereof |
| US4250242A (en) * | 1978-10-31 | 1981-02-10 | American Hoechst Corporation | Uniform exposure of positive-acting diazo type materials through support |
| DE2847878A1 (de) * | 1978-11-04 | 1980-05-22 | Hoechst Ag | Lichtempfindliches gemisch |
| US4308368A (en) * | 1979-03-16 | 1981-12-29 | Daicel Chemical Industries Ltd. | Photosensitive compositions with reaction product of novolak co-condensate with o-quinone diazide |
| US4377631A (en) * | 1981-06-22 | 1983-03-22 | Philip A. Hunt Chemical Corporation | Positive novolak photoresist compositions |
| US4587196A (en) * | 1981-06-22 | 1986-05-06 | Philip A. Hunt Chemical Corporation | Positive photoresist with cresol-formaldehyde novolak resin and photosensitive naphthoquinone diazide |
| US4439516A (en) * | 1982-03-15 | 1984-03-27 | Shipley Company Inc. | High temperature positive diazo photoresist processing using polyvinyl phenol |
| US4499171A (en) * | 1982-04-20 | 1985-02-12 | Japan Synthetic Rubber Co., Ltd. | Positive type photosensitive resin composition with at least two o-quinone diazides |
| US4404357A (en) * | 1982-05-03 | 1983-09-13 | Shipley Company Inc. | High temperature naphthol novolak resin |
| US4424315A (en) * | 1982-09-20 | 1984-01-03 | Shipley Company Inc. | Naphthol novolak resin blend |
| EP0136110A3 (en) * | 1983-08-30 | 1986-05-28 | Mitsubishi Kasei Corporation | Positive photosensitive compositions useful as photoresists |
| US4551409A (en) * | 1983-11-07 | 1985-11-05 | Shipley Company Inc. | Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide |
| JPS60164740A (ja) * | 1984-02-06 | 1985-08-27 | Japan Synthetic Rubber Co Ltd | ポジ型感光性樹脂組成物 |
| JPS61185741A (ja) * | 1985-02-13 | 1986-08-19 | Mitsubishi Chem Ind Ltd | ポジ型フオトレジスト組成物 |
-
1985
- 1985-02-13 JP JP60025660A patent/JPS61185741A/ja active Granted
-
1986
- 1986-02-04 US US06/825,902 patent/US4719167A/en not_active Expired - Fee Related
- 1986-02-05 DE DE3603372A patent/DE3603372C2/de not_active Expired - Fee Related
-
1987
- 1987-03-09 US US07/023,689 patent/US4859563A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE3603372A1 (de) | 1986-08-14 |
| DE3603372C2 (de) | 1994-11-10 |
| US4719167A (en) | 1988-01-12 |
| US4859563A (en) | 1989-08-22 |
| JPS61185741A (ja) | 1986-08-19 |
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