JPH0357072B2 - - Google Patents

Info

Publication number
JPH0357072B2
JPH0357072B2 JP59176420A JP17642084A JPH0357072B2 JP H0357072 B2 JPH0357072 B2 JP H0357072B2 JP 59176420 A JP59176420 A JP 59176420A JP 17642084 A JP17642084 A JP 17642084A JP H0357072 B2 JPH0357072 B2 JP H0357072B2
Authority
JP
Japan
Prior art keywords
melt
single crystal
crucible
heating
heating element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59176420A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6153187A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59176420A priority Critical patent/JPS6153187A/ja
Priority to GB08520574A priority patent/GB2163367B/en
Priority to NL8502286A priority patent/NL193666C/nl
Priority to FR8512629A priority patent/FR2569430B1/fr
Priority to AT0247085A priority patent/AT400848B/de
Priority to SE8503935A priority patent/SE467258B/sv
Priority to DE19853530231 priority patent/DE3530231A1/de
Priority to CA000489331A priority patent/CA1290654C/en
Priority to IT21977/85A priority patent/IT1200719B/it
Publication of JPS6153187A publication Critical patent/JPS6153187A/ja
Priority to MYPI87000893A priority patent/MY101257A/en
Publication of JPH0357072B2 publication Critical patent/JPH0357072B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP59176420A 1984-08-24 1984-08-24 単結晶成長装置 Granted JPS6153187A (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP59176420A JPS6153187A (ja) 1984-08-24 1984-08-24 単結晶成長装置
GB08520574A GB2163367B (en) 1984-08-24 1985-08-16 Crystal puffing
NL8502286A NL193666C (nl) 1984-08-24 1985-08-19 Inrichting voor het vervaardigen van een monokristallijn kristallichaam.
FR8512629A FR2569430B1 (fr) 1984-08-24 1985-08-22 Appareil pour extraire des monocristaux d'un bain de materiau semi-conducteur fondu contenu dans un creuset
SE8503935A SE467258B (sv) 1984-08-24 1985-08-23 Anordning foer odling av en enkristall med organ foer olikformig uppvaermning
AT0247085A AT400848B (de) 1984-08-24 1985-08-23 Vorrichtung zum züchten eines einkristalls
DE19853530231 DE3530231A1 (de) 1984-08-24 1985-08-23 Vorrichtung zum ziehen von einkristallen
CA000489331A CA1290654C (en) 1984-08-24 1985-08-23 Monocrystal growing apparatus
IT21977/85A IT1200719B (it) 1984-08-24 1985-08-23 Apparacchiatura per la crescita di monocristalli
MYPI87000893A MY101257A (en) 1984-08-24 1987-06-25 Monocrystal growing apparatus.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59176420A JPS6153187A (ja) 1984-08-24 1984-08-24 単結晶成長装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP16391692A Division JPH0660080B2 (ja) 1992-05-29 1992-05-29 単結晶成長装置

Publications (2)

Publication Number Publication Date
JPS6153187A JPS6153187A (ja) 1986-03-17
JPH0357072B2 true JPH0357072B2 (de) 1991-08-30

Family

ID=16013382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59176420A Granted JPS6153187A (ja) 1984-08-24 1984-08-24 単結晶成長装置

Country Status (10)

Country Link
JP (1) JPS6153187A (de)
AT (1) AT400848B (de)
CA (1) CA1290654C (de)
DE (1) DE3530231A1 (de)
FR (1) FR2569430B1 (de)
GB (1) GB2163367B (de)
IT (1) IT1200719B (de)
MY (1) MY101257A (de)
NL (1) NL193666C (de)
SE (1) SE467258B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62105998A (ja) * 1985-10-31 1987-05-16 Sony Corp シリコン基板の製法
JPS62223090A (ja) * 1986-03-20 1987-10-01 Shin Etsu Handotai Co Ltd 半導体単結晶引上装置
JPS6389488A (ja) * 1986-09-30 1988-04-20 Toshiba Corp 単結晶の製造方法
DE3733487C2 (de) * 1987-10-03 1997-08-14 Leybold Ag Vorrichtung zum Ziehen von Einkristallen
US5139750A (en) * 1989-10-16 1992-08-18 Nkk Corporation Silicon single crystal manufacturing apparatus
JPH03183689A (ja) * 1989-12-11 1991-08-09 Mitsubishi Materials Corp 単結晶引上装置および引上方法
JP3016897B2 (ja) * 1991-03-20 2000-03-06 信越半導体株式会社 シリコン単結晶の製造方法及び装置
US5363795A (en) * 1991-09-04 1994-11-15 Kawasaki Steel Corporation Czochralski crystal pulling process and an apparatus for carrying out the same
EP0530397A1 (de) * 1991-09-04 1993-03-10 Kawasaki Steel Corporation Verfahren und Vorrichtung den Kristallziehungsprozess nach dem Czochralski Verfahren
JP2862158B2 (ja) * 1993-08-27 1999-02-24 信越半導体株式会社 シリコン単結晶の製造装置
JPH1179889A (ja) 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
US6285011B1 (en) 1999-10-12 2001-09-04 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus
KR101105526B1 (ko) * 2008-12-30 2012-01-13 주식회사 엘지실트론 단결정 잉곳 제조용 히터 및 이를 구비하는 단결정 잉곳 제조장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4921063A (de) * 1972-06-15 1974-02-25
JPS5341115A (en) * 1976-09-28 1978-04-14 Nec Corp High picture element density conversion device
JPS5740119A (en) * 1980-07-18 1982-03-05 Skf Kugellagerfabriken Gmbh Thin bearing bush made by pressdrawing
JPS59137399A (ja) * 1983-01-28 1984-08-07 Nippon Telegr & Teleph Corp <Ntt> 低転位密度単結晶の育成方法及びその装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2979386A (en) * 1956-08-02 1961-04-11 Shockley William Crystal growing apparatus
FR1316707A (fr) * 1961-12-22 1963-02-01 Radiotechnique Perfectionnements aux dispositifs d'obtention de monocristaux par tirage
DE1289950B (de) * 1963-07-24 1969-02-27 Siemens Ag Vorrichtung zum Ziehen von Halbleiterkristallen
US3359077A (en) * 1964-05-25 1967-12-19 Globe Union Inc Method of growing a crystal
DE1769860A1 (de) * 1968-07-26 1971-11-11 Siemens Ag Vorrichtung zum Ziehen von versetzungsfreien Halbleitereinkristallstaeben
DE2821481C2 (de) * 1978-05-17 1985-12-05 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze
US4277441A (en) * 1979-01-15 1981-07-07 Mobil Tyco Solar Energy Corporation Apparatus for monitoring crystal growth
DE3005492C2 (de) * 1980-02-14 1983-10-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung reinster Einkristalle durch Tiegelziehen nach Czochralski
JPS5711897A (en) * 1980-06-27 1982-01-21 Sumitomo Electric Ind Ltd Method of pulling up single crystal and device therefor
JPS5645890A (en) * 1980-06-30 1981-04-25 Sony Corp Crystal growing apparatus
JPH0244799B2 (ja) * 1981-10-26 1990-10-05 Sony Corp Ketsushoseichohoho
JPS5964591A (ja) * 1982-09-30 1984-04-12 Sumitomo Electric Ind Ltd 単結晶引上装置
JPH0669917B2 (ja) * 1982-10-08 1994-09-07 住友電気工業株式会社 複数段ヒ−タ−の制御方法
JPS60103097A (ja) * 1983-11-08 1985-06-07 Sumitomo Electric Ind Ltd 単結晶引上装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4921063A (de) * 1972-06-15 1974-02-25
JPS5341115A (en) * 1976-09-28 1978-04-14 Nec Corp High picture element density conversion device
JPS5740119A (en) * 1980-07-18 1982-03-05 Skf Kugellagerfabriken Gmbh Thin bearing bush made by pressdrawing
JPS59137399A (ja) * 1983-01-28 1984-08-07 Nippon Telegr & Teleph Corp <Ntt> 低転位密度単結晶の育成方法及びその装置

Also Published As

Publication number Publication date
NL193666C (nl) 2000-06-06
SE467258B (sv) 1992-06-22
JPS6153187A (ja) 1986-03-17
GB2163367B (en) 1988-04-07
NL193666B (nl) 2000-02-01
ATA247085A (de) 1995-08-15
IT8521977A0 (it) 1985-08-23
DE3530231A1 (de) 1986-02-27
IT1200719B (it) 1989-01-27
GB2163367A (en) 1986-02-26
FR2569430B1 (fr) 1993-12-03
SE8503935L (sv) 1986-02-25
AT400848B (de) 1996-03-25
SE8503935D0 (sv) 1985-08-23
FR2569430A1 (fr) 1986-02-28
CA1290654C (en) 1991-10-15
MY101257A (en) 1991-08-17
DE3530231C2 (de) 1991-01-17
GB8520574D0 (en) 1985-09-25
NL8502286A (nl) 1986-03-17

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term