GB2163367B - Crystal puffing - Google Patents

Crystal puffing

Info

Publication number
GB2163367B
GB2163367B GB08520574A GB8520574A GB2163367B GB 2163367 B GB2163367 B GB 2163367B GB 08520574 A GB08520574 A GB 08520574A GB 8520574 A GB8520574 A GB 8520574A GB 2163367 B GB2163367 B GB 2163367B
Authority
GB
United Kingdom
Prior art keywords
puffing
crystal
crystal puffing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08520574A
Other languages
English (en)
Other versions
GB2163367A (en
GB8520574D0 (en
Inventor
Toshihiko Suzuki
Kinji Hoshi
Nobuyuki Izawa
Yasunori Okubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB8520574D0 publication Critical patent/GB8520574D0/en
Publication of GB2163367A publication Critical patent/GB2163367A/en
Application granted granted Critical
Publication of GB2163367B publication Critical patent/GB2163367B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB08520574A 1984-08-24 1985-08-16 Crystal puffing Expired GB2163367B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59176420A JPS6153187A (ja) 1984-08-24 1984-08-24 単結晶成長装置

Publications (3)

Publication Number Publication Date
GB8520574D0 GB8520574D0 (en) 1985-09-25
GB2163367A GB2163367A (en) 1986-02-26
GB2163367B true GB2163367B (en) 1988-04-07

Family

ID=16013382

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08520574A Expired GB2163367B (en) 1984-08-24 1985-08-16 Crystal puffing

Country Status (10)

Country Link
JP (1) JPS6153187A (de)
AT (1) AT400848B (de)
CA (1) CA1290654C (de)
DE (1) DE3530231A1 (de)
FR (1) FR2569430B1 (de)
GB (1) GB2163367B (de)
IT (1) IT1200719B (de)
MY (1) MY101257A (de)
NL (1) NL193666C (de)
SE (1) SE467258B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62105998A (ja) * 1985-10-31 1987-05-16 Sony Corp シリコン基板の製法
JPS62223090A (ja) * 1986-03-20 1987-10-01 Shin Etsu Handotai Co Ltd 半導体単結晶引上装置
JPS6389488A (ja) * 1986-09-30 1988-04-20 Toshiba Corp 単結晶の製造方法
DE3733487C2 (de) * 1987-10-03 1997-08-14 Leybold Ag Vorrichtung zum Ziehen von Einkristallen
US5139750A (en) * 1989-10-16 1992-08-18 Nkk Corporation Silicon single crystal manufacturing apparatus
JPH03183689A (ja) * 1989-12-11 1991-08-09 Mitsubishi Materials Corp 単結晶引上装置および引上方法
JP3016897B2 (ja) * 1991-03-20 2000-03-06 信越半導体株式会社 シリコン単結晶の製造方法及び装置
US5363795A (en) * 1991-09-04 1994-11-15 Kawasaki Steel Corporation Czochralski crystal pulling process and an apparatus for carrying out the same
EP0530397A1 (de) * 1991-09-04 1993-03-10 Kawasaki Steel Corporation Verfahren und Vorrichtung den Kristallziehungsprozess nach dem Czochralski Verfahren
JP2862158B2 (ja) * 1993-08-27 1999-02-24 信越半導体株式会社 シリコン単結晶の製造装置
JPH1179889A (ja) 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
US6285011B1 (en) 1999-10-12 2001-09-04 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus
KR101105526B1 (ko) * 2008-12-30 2012-01-13 주식회사 엘지실트론 단결정 잉곳 제조용 히터 및 이를 구비하는 단결정 잉곳 제조장치

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2979386A (en) * 1956-08-02 1961-04-11 Shockley William Crystal growing apparatus
FR1316707A (fr) * 1961-12-22 1963-02-01 Radiotechnique Perfectionnements aux dispositifs d'obtention de monocristaux par tirage
DE1289950B (de) * 1963-07-24 1969-02-27 Siemens Ag Vorrichtung zum Ziehen von Halbleiterkristallen
US3359077A (en) * 1964-05-25 1967-12-19 Globe Union Inc Method of growing a crystal
DE1769860A1 (de) * 1968-07-26 1971-11-11 Siemens Ag Vorrichtung zum Ziehen von versetzungsfreien Halbleitereinkristallstaeben
JPS4921063A (de) * 1972-06-15 1974-02-25
JPS6027464B2 (ja) * 1976-09-28 1985-06-28 日本電気株式会社 高画素密度変換装置
DE2821481C2 (de) * 1978-05-17 1985-12-05 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze
US4277441A (en) * 1979-01-15 1981-07-07 Mobil Tyco Solar Energy Corporation Apparatus for monitoring crystal growth
DE3005492C2 (de) * 1980-02-14 1983-10-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung reinster Einkristalle durch Tiegelziehen nach Czochralski
JPS5711897A (en) * 1980-06-27 1982-01-21 Sumitomo Electric Ind Ltd Method of pulling up single crystal and device therefor
JPS5645890A (en) * 1980-06-30 1981-04-25 Sony Corp Crystal growing apparatus
DE3027262A1 (de) * 1980-07-18 1982-02-11 Skf Kugellagerfabriken Gmbh, 8720 Schweinfurt Im ziehverfahren hergestellte, duennwandige lagerbuechse
JPH0244799B2 (ja) * 1981-10-26 1990-10-05 Sony Corp Ketsushoseichohoho
JPS5964591A (ja) * 1982-09-30 1984-04-12 Sumitomo Electric Ind Ltd 単結晶引上装置
JPH0669917B2 (ja) * 1982-10-08 1994-09-07 住友電気工業株式会社 複数段ヒ−タ−の制御方法
JPS59137399A (ja) * 1983-01-28 1984-08-07 Nippon Telegr & Teleph Corp <Ntt> 低転位密度単結晶の育成方法及びその装置
JPS60103097A (ja) * 1983-11-08 1985-06-07 Sumitomo Electric Ind Ltd 単結晶引上装置

Also Published As

Publication number Publication date
NL193666C (nl) 2000-06-06
SE467258B (sv) 1992-06-22
JPS6153187A (ja) 1986-03-17
NL193666B (nl) 2000-02-01
ATA247085A (de) 1995-08-15
IT8521977A0 (it) 1985-08-23
DE3530231A1 (de) 1986-02-27
IT1200719B (it) 1989-01-27
GB2163367A (en) 1986-02-26
FR2569430B1 (fr) 1993-12-03
SE8503935L (sv) 1986-02-25
AT400848B (de) 1996-03-25
SE8503935D0 (sv) 1985-08-23
FR2569430A1 (fr) 1986-02-28
JPH0357072B2 (de) 1991-08-30
CA1290654C (en) 1991-10-15
MY101257A (en) 1991-08-17
DE3530231C2 (de) 1991-01-17
GB8520574D0 (en) 1985-09-25
NL8502286A (nl) 1986-03-17

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20020816