JPH0347732B2 - - Google Patents
Info
- Publication number
- JPH0347732B2 JPH0347732B2 JP55054137A JP5413780A JPH0347732B2 JP H0347732 B2 JPH0347732 B2 JP H0347732B2 JP 55054137 A JP55054137 A JP 55054137A JP 5413780 A JP5413780 A JP 5413780A JP H0347732 B2 JPH0347732 B2 JP H0347732B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- pad
- resin
- nitride film
- polyimide resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 45
- 150000004767 nitrides Chemical class 0.000 claims description 42
- 229920001721 polyimide Polymers 0.000 claims description 37
- 239000011347 resin Substances 0.000 claims description 37
- 229920005989 resin Polymers 0.000 claims description 37
- 239000009719 polyimide resin Substances 0.000 claims description 36
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 239000011574 phosphorus Substances 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910015365 Au—Si Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910001415 sodium ion Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L23/3135—Double encapsulation or coating and encapsulation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5413780A JPS56150830A (en) | 1980-04-25 | 1980-04-25 | Semiconductor device |
DE19813116406 DE3116406A1 (de) | 1980-04-25 | 1981-04-24 | Halbleiteranordnung |
US06/837,757 US4733289A (en) | 1980-04-25 | 1986-03-10 | Resin-molded semiconductor device using polyimide and nitride films for the passivation film |
US07/372,184 US4990993A (en) | 1980-04-25 | 1989-06-26 | Resin-molded semiconductor device using polymide and nitride films for the passivation film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5413780A JPS56150830A (en) | 1980-04-25 | 1980-04-25 | Semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2177407A Division JPH0340430A (ja) | 1990-07-06 | 1990-07-06 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56150830A JPS56150830A (en) | 1981-11-21 |
JPH0347732B2 true JPH0347732B2 (US20080094685A1-20080424-C00004.png) | 1991-07-22 |
Family
ID=12962181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5413780A Granted JPS56150830A (en) | 1980-04-25 | 1980-04-25 | Semiconductor device |
Country Status (3)
Country | Link |
---|---|
US (2) | US4733289A (US20080094685A1-20080424-C00004.png) |
JP (1) | JPS56150830A (US20080094685A1-20080424-C00004.png) |
DE (1) | DE3116406A1 (US20080094685A1-20080424-C00004.png) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018100950A (ja) * | 2016-12-20 | 2018-06-28 | 株式会社デンソー | 半導体装置およびその製造方法 |
WO2018116785A1 (ja) * | 2016-12-20 | 2018-06-28 | 株式会社デンソー | 半導体装置およびその製造方法 |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS56150830A (en) * | 1980-04-25 | 1981-11-21 | Hitachi Ltd | Semiconductor device |
JPS59172258A (ja) * | 1983-03-18 | 1984-09-28 | Hitachi Ltd | 半導体装置 |
JPS6010645A (ja) * | 1983-06-30 | 1985-01-19 | Toshiba Corp | 樹脂封止型半導体装置 |
DE3327960A1 (de) * | 1983-08-03 | 1985-02-14 | Telefunken electronic GmbH, 7100 Heilbronn | Halbleiteranordnung in einem isolierstoffgehaeuse |
JPS60140739A (ja) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | パツシベ−シヨン構造を備えたプラスチツクicパツケ−ジ |
GB8401250D0 (en) * | 1984-01-18 | 1984-02-22 | British Telecomm | Semiconductor fabrication |
EP0177562A4 (en) * | 1984-03-22 | 1987-06-03 | Mostek Corp | NITRIDE BINDING LAYER. |
JPS60223149A (ja) * | 1984-04-19 | 1985-11-07 | Hitachi Ltd | 半導体装置 |
DE3421127A1 (de) * | 1984-06-07 | 1985-12-12 | Telefunken electronic GmbH, 7100 Heilbronn | Verfahren zum herstellen einer halbleiteranordnung |
EP0185787B1 (de) * | 1984-12-21 | 1988-08-10 | Deutsche ITT Industries GmbH | Plastikumhülltes Halbleiterbauelement |
US5111276A (en) * | 1985-03-19 | 1992-05-05 | National Semiconductor Corp. | Thick bus metallization interconnect structure to reduce bus area |
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JPH0695517B2 (ja) * | 1987-06-25 | 1994-11-24 | 日本電気株式会社 | 半導体装置 |
JPH01214141A (ja) * | 1988-02-23 | 1989-08-28 | Nec Corp | フリップチップ型半導体装置 |
JPH077783B2 (ja) * | 1988-03-18 | 1995-01-30 | 株式会社東芝 | 電気的接続部に銅もしくは銅合金製金属細線を配置する半導体装置 |
JPH02105418A (ja) * | 1988-10-14 | 1990-04-18 | Mitsubishi Electric Corp | 樹脂封止型半導体装置 |
US5252844A (en) * | 1988-11-17 | 1993-10-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having a redundant circuit and method of manufacturing thereof |
JPH02238627A (ja) * | 1989-03-10 | 1990-09-20 | Nec Corp | 半導体装置 |
US5068711A (en) * | 1989-03-20 | 1991-11-26 | Fujitsu Limited | Semiconductor device having a planarized surface |
US5144407A (en) * | 1989-07-03 | 1992-09-01 | General Electric Company | Semiconductor chip protection layer and protected chip |
JPH03254137A (ja) * | 1990-03-05 | 1991-11-13 | Toshiba Corp | 半導体集積回路装置 |
JPH0340430A (ja) * | 1990-07-06 | 1991-02-21 | Hitachi Ltd | 半導体装置 |
JP2593965B2 (ja) * | 1991-01-29 | 1997-03-26 | 三菱電機株式会社 | 半導体装置 |
JPH04261049A (ja) * | 1991-01-31 | 1992-09-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
DK0573469T3 (da) * | 1991-02-25 | 1994-11-28 | Ake Gustafson | Fremgangsmåde til fiksering af en vikling på et elektronisk kredsløb |
US5223851A (en) * | 1991-06-05 | 1993-06-29 | Trovan Limited | Apparatus for facilitating interconnection of antenna lead wires to an integrated circuit and encapsulating the assembly to form an improved miniature transponder device |
US5281855A (en) * | 1991-06-05 | 1994-01-25 | Trovan Limited | Integrated circuit device including means for facilitating connection of antenna lead wires to an integrated circuit die |
KR930006868A (ko) * | 1991-09-11 | 1993-04-22 | 문정환 | 반도체 패키지 |
KR930011143A (ko) * | 1991-11-14 | 1993-06-23 | 김광호 | 반도체장치 및 그 제조방법 |
US5298792A (en) * | 1992-02-03 | 1994-03-29 | Micron Technology, Inc. | Integrated circuit device with bi-level contact landing pads |
US5567981A (en) | 1993-03-31 | 1996-10-22 | Intel Corporation | Bonding pad structure having an interposed rigid layer |
US5596172A (en) * | 1993-05-07 | 1997-01-21 | Motorola, Inc. | Planar encapsulation process |
US5438022A (en) | 1993-12-14 | 1995-08-01 | At&T Global Information Solutions Company | Method for using low dielectric constant material in integrated circuit fabrication |
JPH07231015A (ja) * | 1994-02-17 | 1995-08-29 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
KR100372995B1 (ko) * | 1994-05-24 | 2003-03-31 | 히다치 가세고교 가부시끼가이샤 | 반도체기판위에목적하는패턴의수지막을형성하는방법,반도체칩,반도체패키지,및레지스트상박리액 |
KR100211070B1 (ko) * | 1994-08-19 | 1999-07-15 | 아끼구사 나오유끼 | 반도체 장치 및 그 제조방법 |
JPH08162528A (ja) * | 1994-10-03 | 1996-06-21 | Sony Corp | 半導体装置の層間絶縁膜構造 |
DE19540309A1 (de) * | 1995-10-28 | 1997-04-30 | Philips Patentverwaltung | Halbleiterbauelement mit Passivierungsaufbau |
KR0182503B1 (ko) * | 1995-12-30 | 1999-04-15 | 김광호 | 와이어 볼 보다 작은 본딩 창을 갖는 반도체 칩과 그 제조 방법 |
US5750419A (en) * | 1997-02-24 | 1998-05-12 | Motorola, Inc. | Process for forming a semiconductor device having a ferroelectric capacitor |
US5976964A (en) | 1997-04-22 | 1999-11-02 | Micron Technology, Inc. | Method of improving interconnect of semiconductor device by utilizing a flattened ball bond |
US6127721A (en) * | 1997-09-30 | 2000-10-03 | Siemens Aktiengesellschaft | Soft passivation layer in semiconductor fabrication |
WO1999049512A1 (fr) * | 1998-03-20 | 1999-09-30 | Hitachi, Ltd. | Dispositif a semi-conducteur et procede de fabrication associe |
US6600215B1 (en) | 1998-04-02 | 2003-07-29 | Micron Technology, Inc. | Method and apparatus for coupling a semiconductor die to die terminals |
US6303423B1 (en) * | 1998-12-21 | 2001-10-16 | Megic Corporation | Method for forming high performance system-on-chip using post passivation process |
US8178435B2 (en) * | 1998-12-21 | 2012-05-15 | Megica Corporation | High performance system-on-chip inductor using post passivation process |
US6803327B1 (en) | 1999-04-05 | 2004-10-12 | Taiwan Semiconductor Manufacturing Company | Cost effective polymide process to solve passivation extrusion or damage and SOG delminates |
EP1091407A1 (de) * | 1999-10-04 | 2001-04-11 | Infineon Technologies AG | Überspannungsschutzanordnung für Halbleiterbausteine |
KR100702120B1 (ko) * | 2001-06-30 | 2007-03-30 | 주식회사 하이닉스반도체 | 반도체 소자의 본딩 패드 구조 및 그의 형성 방법 |
SG102639A1 (en) * | 2001-10-08 | 2004-03-26 | Micron Technology Inc | Apparatus and method for packing circuits |
TWI236763B (en) * | 2003-05-27 | 2005-07-21 | Megic Corp | High performance system-on-chip inductor using post passivation process |
US7470997B2 (en) * | 2003-07-23 | 2008-12-30 | Megica Corporation | Wirebond pad for semiconductor chip or wafer |
US7169691B2 (en) * | 2004-01-29 | 2007-01-30 | Micron Technology, Inc. | Method of fabricating wafer-level packaging with sidewall passivation and related apparatus |
DE102004036140A1 (de) * | 2004-07-26 | 2006-03-23 | Infineon Technologies Ag | Halbleiterbauelement |
KR100729256B1 (ko) * | 2005-01-13 | 2007-06-15 | 삼성전자주식회사 | 포토레지스트 조성물, 이를 이용한 포토레지스트 패턴의형성 방법 및 반도체 소자의 보호막 형성방법 |
JP2006303452A (ja) * | 2005-03-25 | 2006-11-02 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
US8384189B2 (en) * | 2005-03-29 | 2013-02-26 | Megica Corporation | High performance system-on-chip using post passivation process |
JP2006351892A (ja) * | 2005-06-17 | 2006-12-28 | Rohm Co Ltd | 半導体集積回路装置 |
US8421227B2 (en) * | 2006-06-28 | 2013-04-16 | Megica Corporation | Semiconductor chip structure |
US8193636B2 (en) * | 2007-03-13 | 2012-06-05 | Megica Corporation | Chip assembly with interconnection by metal bump |
US20100200981A1 (en) * | 2009-02-09 | 2010-08-12 | Advanced Semiconductor Engineering, Inc. | Semiconductor package and method of manufacturing the same |
TWI452640B (zh) * | 2009-02-09 | 2014-09-11 | Advanced Semiconductor Eng | 半導體封裝構造及其封裝方法 |
JP2011014556A (ja) * | 2009-06-30 | 2011-01-20 | Hitachi Ltd | 半導体装置とその製造方法 |
JP4968371B2 (ja) * | 2010-06-30 | 2012-07-04 | 大日本印刷株式会社 | センサデバイスの製造方法及びセンサデバイス |
US20120267779A1 (en) * | 2011-04-25 | 2012-10-25 | Mediatek Inc. | Semiconductor package |
US20150255362A1 (en) * | 2014-03-07 | 2015-09-10 | Infineon Technologies Ag | Semiconductor Device with a Passivation Layer and Method for Producing Thereof |
DE112014006759B4 (de) | 2014-07-30 | 2019-02-21 | Hitachi, Ltd. | Halbleitervorrichtung, Verfahren zum Herstellen einer Halbleitervorrichtung und Leistungsumsetzungsvorrichtung |
JP2020047664A (ja) * | 2018-09-14 | 2020-03-26 | キオクシア株式会社 | 半導体装置および半導体装置の作製方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS506279A (US20080094685A1-20080424-C00004.png) * | 1973-05-18 | 1975-01-22 | ||
JPS521377A (en) * | 1975-06-19 | 1977-01-07 | Kelsey Hayes Co | Mechanism of measuring and distributing valve |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
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US4001871A (en) * | 1968-06-17 | 1977-01-04 | Nippon Electric Company, Ltd. | Semiconductor device |
US3911475A (en) * | 1972-04-19 | 1975-10-07 | Westinghouse Electric Corp | Encapsulated solid state electronic devices having a sealed lead-encapsulant interface |
US4001870A (en) * | 1972-08-18 | 1977-01-04 | Hitachi, Ltd. | Isolating protective film for semiconductor devices and method for making the same |
US3945030A (en) * | 1973-01-15 | 1976-03-16 | Signetics Corporation | Semiconductor structure having contact openings with sloped side walls |
DE2403149A1 (de) * | 1974-01-23 | 1975-07-24 | Siemens Ag | Halbleitervorrichtung |
JPS5421073B2 (US20080094685A1-20080424-C00004.png) * | 1974-04-15 | 1979-07-27 | ||
JPS5176078A (en) * | 1974-12-23 | 1976-07-01 | Hitachi Ltd | Handaboshokumakuo hodokoshita handotaisochi |
JPS5851425B2 (ja) * | 1975-08-22 | 1983-11-16 | 株式会社日立製作所 | ハンドウタイソウチ |
DE2548060C2 (de) * | 1975-10-27 | 1984-06-20 | Siemens AG, 1000 Berlin und 8000 München | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
JPS5258491A (en) * | 1975-11-10 | 1977-05-13 | Hitachi Ltd | Semiconductor device |
JPS5258469A (en) * | 1975-11-10 | 1977-05-13 | Hitachi Ltd | Resin-molded type semiconductor device |
JPS5271068A (en) * | 1975-12-10 | 1977-06-14 | Masao Yamada | Solid parking zone |
JPS5352367A (en) * | 1976-10-25 | 1978-05-12 | Hitachi Ltd | Electronic parts |
US4091406A (en) * | 1976-11-01 | 1978-05-23 | Rca Corporation | Combination glass/low temperature deposited Siw Nx Hy O.sub.z |
JPS5414672A (en) * | 1977-07-06 | 1979-02-03 | Hitachi Ltd | Bonding electrode structure of semiconductor device |
US4248920A (en) * | 1978-04-26 | 1981-02-03 | Tokyo Shibaura Denki Kabushiki Kaisha | Resin-sealed semiconductor device |
JPS5519850A (en) * | 1978-07-31 | 1980-02-12 | Hitachi Ltd | Semiconductor |
US4394678A (en) * | 1979-09-19 | 1983-07-19 | Motorola, Inc. | Elevated edge-protected bonding pedestals for semiconductor devices |
JPS56107570A (en) * | 1980-01-30 | 1981-08-26 | Mitsubishi Electric Corp | Semiconductor device |
JPS56150830A (en) * | 1980-04-25 | 1981-11-21 | Hitachi Ltd | Semiconductor device |
-
1980
- 1980-04-25 JP JP5413780A patent/JPS56150830A/ja active Granted
-
1981
- 1981-04-24 DE DE19813116406 patent/DE3116406A1/de not_active Withdrawn
-
1986
- 1986-03-10 US US06/837,757 patent/US4733289A/en not_active Expired - Lifetime
-
1989
- 1989-06-26 US US07/372,184 patent/US4990993A/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS506279A (US20080094685A1-20080424-C00004.png) * | 1973-05-18 | 1975-01-22 | ||
JPS521377A (en) * | 1975-06-19 | 1977-01-07 | Kelsey Hayes Co | Mechanism of measuring and distributing valve |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018100950A (ja) * | 2016-12-20 | 2018-06-28 | 株式会社デンソー | 半導体装置およびその製造方法 |
WO2018116785A1 (ja) * | 2016-12-20 | 2018-06-28 | 株式会社デンソー | 半導体装置およびその製造方法 |
CN110088587A (zh) * | 2016-12-20 | 2019-08-02 | 株式会社电装 | 半导体装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS56150830A (en) | 1981-11-21 |
DE3116406A1 (de) | 1982-06-16 |
US4733289A (en) | 1988-03-22 |
US4990993A (en) | 1991-02-05 |
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