JPH0324060B2 - - Google Patents

Info

Publication number
JPH0324060B2
JPH0324060B2 JP56158123A JP15812381A JPH0324060B2 JP H0324060 B2 JPH0324060 B2 JP H0324060B2 JP 56158123 A JP56158123 A JP 56158123A JP 15812381 A JP15812381 A JP 15812381A JP H0324060 B2 JPH0324060 B2 JP H0324060B2
Authority
JP
Japan
Prior art keywords
forming
insulating film
photoresist film
film
resist mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56158123A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5860574A (ja
Inventor
Kimyoshi Yamazaki
Kazuyoshi Asai
Takashi Mizutani
Katsuhiko Kurumada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56158123A priority Critical patent/JPS5860574A/ja
Publication of JPS5860574A publication Critical patent/JPS5860574A/ja
Publication of JPH0324060B2 publication Critical patent/JPH0324060B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56158123A 1981-10-06 1981-10-06 電界効果トランジスタの製造方法 Granted JPS5860574A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56158123A JPS5860574A (ja) 1981-10-06 1981-10-06 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56158123A JPS5860574A (ja) 1981-10-06 1981-10-06 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS5860574A JPS5860574A (ja) 1983-04-11
JPH0324060B2 true JPH0324060B2 (enrdf_load_stackoverflow) 1991-04-02

Family

ID=15664794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56158123A Granted JPS5860574A (ja) 1981-10-06 1981-10-06 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5860574A (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873164A (ja) * 1981-10-27 1983-05-02 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタとその製造方法
JPS5892265A (ja) * 1981-11-27 1983-06-01 Fujitsu Ltd 半導体装置の製造方法
JPS5935479A (ja) * 1982-08-24 1984-02-27 Fujitsu Ltd 半導体装置の製造方法
JPS60194578A (ja) * 1984-03-16 1985-10-03 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタの製造方法
JPS60194577A (ja) * 1984-03-16 1985-10-03 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタの製造方法
JPS61105874A (ja) * 1984-10-29 1986-05-23 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタの製法
JPS61188971A (ja) * 1985-02-15 1986-08-22 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ、およびその製造方法
JPS61188972A (ja) * 1985-02-15 1986-08-22 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ、およびその製造方法
JPS61219177A (ja) * 1985-03-25 1986-09-29 Sumitomo Electric Ind Ltd シヨツトキ−ゲ−ト電界効果トランジスタ及びその製造方法
US4642259A (en) * 1985-04-26 1987-02-10 Triquint Semiconductors, Inc. Source-side self-aligned gate process
JPS62254470A (ja) * 1986-04-28 1987-11-06 Seiko Instr & Electronics Ltd 接合型薄膜トランジスタの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5646562A (en) * 1979-09-25 1981-04-27 Sony Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5860574A (ja) 1983-04-11

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