JPH0313744B2 - - Google Patents
Info
- Publication number
- JPH0313744B2 JPH0313744B2 JP55082388A JP8238880A JPH0313744B2 JP H0313744 B2 JPH0313744 B2 JP H0313744B2 JP 55082388 A JP55082388 A JP 55082388A JP 8238880 A JP8238880 A JP 8238880A JP H0313744 B2 JPH0313744 B2 JP H0313744B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- etched
- layer
- mask
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8238880A JPS577936A (en) | 1980-06-18 | 1980-06-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8238880A JPS577936A (en) | 1980-06-18 | 1980-06-18 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS577936A JPS577936A (en) | 1982-01-16 |
JPH0313744B2 true JPH0313744B2 (ko) | 1991-02-25 |
Family
ID=13773189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8238880A Granted JPS577936A (en) | 1980-06-18 | 1980-06-18 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS577936A (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57124440A (en) * | 1981-01-27 | 1982-08-03 | Nec Corp | Compound etching method |
JPS5972138A (ja) * | 1982-10-19 | 1984-04-24 | Toshiba Corp | 半導体装置の製造方法 |
US4460435A (en) * | 1983-12-19 | 1984-07-17 | Rca Corporation | Patterning of submicrometer metal silicide structures |
US4502915B1 (en) * | 1984-01-23 | 1998-11-03 | Texas Instruments Inc | Two-step plasma process for selective anisotropic etching of polycrystalline silicon without leaving residue |
US4639288A (en) * | 1984-11-05 | 1987-01-27 | Advanced Micro Devices, Inc. | Process for formation of trench in integrated circuit structure using isotropic and anisotropic etching |
FR2598256B1 (fr) * | 1986-04-30 | 1988-07-08 | Thomson Csf | Procede de gravure seche selective de couches de materiaux semi-conducteurs iii-v, et transistor obtenu par ce procede. |
JPS6432633A (en) * | 1987-07-29 | 1989-02-02 | Hitachi Ltd | Taper etching method |
US5316616A (en) * | 1988-02-09 | 1994-05-31 | Fujitsu Limited | Dry etching with hydrogen bromide or bromine |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52141443A (en) * | 1976-05-21 | 1977-11-25 | Nippon Electric Co | Method of etching films |
JPS5461475A (en) * | 1977-10-26 | 1979-05-17 | Hitachi Ltd | Poly-film etching method |
JPS5487172A (en) * | 1977-12-23 | 1979-07-11 | Hitachi Ltd | Manufacture for simiconductor device |
-
1980
- 1980-06-18 JP JP8238880A patent/JPS577936A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52141443A (en) * | 1976-05-21 | 1977-11-25 | Nippon Electric Co | Method of etching films |
JPS5461475A (en) * | 1977-10-26 | 1979-05-17 | Hitachi Ltd | Poly-film etching method |
JPS5487172A (en) * | 1977-12-23 | 1979-07-11 | Hitachi Ltd | Manufacture for simiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS577936A (en) | 1982-01-16 |
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