JPS577936A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS577936A
JPS577936A JP8238880A JP8238880A JPS577936A JP S577936 A JPS577936 A JP S577936A JP 8238880 A JP8238880 A JP 8238880A JP 8238880 A JP8238880 A JP 8238880A JP S577936 A JPS577936 A JP S577936A
Authority
JP
Japan
Prior art keywords
etching
film
pattern
high frequency
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8238880A
Other languages
English (en)
Other versions
JPH0313744B2 (ja
Inventor
Chuichi Takada
Ryoji Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8238880A priority Critical patent/JPS577936A/ja
Publication of JPS577936A publication Critical patent/JPS577936A/ja
Publication of JPH0313744B2 publication Critical patent/JPH0313744B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP8238880A 1980-06-18 1980-06-18 Manufacture of semiconductor device Granted JPS577936A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8238880A JPS577936A (en) 1980-06-18 1980-06-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8238880A JPS577936A (en) 1980-06-18 1980-06-18 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS577936A true JPS577936A (en) 1982-01-16
JPH0313744B2 JPH0313744B2 (ja) 1991-02-25

Family

ID=13773189

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8238880A Granted JPS577936A (en) 1980-06-18 1980-06-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS577936A (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57124440A (en) * 1981-01-27 1982-08-03 Nec Corp Compound etching method
JPS5972138A (ja) * 1982-10-19 1984-04-24 Toshiba Corp 半導体装置の製造方法
US4460435A (en) * 1983-12-19 1984-07-17 Rca Corporation Patterning of submicrometer metal silicide structures
US4502915A (en) * 1984-01-23 1985-03-05 Texas Instruments Incorporated Two-step plasma process for selective anisotropic etching of polycrystalline silicon without leaving residue
US4639288A (en) * 1984-11-05 1987-01-27 Advanced Micro Devices, Inc. Process for formation of trench in integrated circuit structure using isotropic and anisotropic etching
US4742026A (en) * 1986-04-30 1988-05-03 Thomson-Csf Method for the selective dry etching of layers of III-V group semiconductive materials
EP0301335A2 (en) * 1987-07-29 1989-02-01 Hitachi, Ltd. Method of dry etching
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52141443A (en) * 1976-05-21 1977-11-25 Nippon Electric Co Method of etching films
JPS5461475A (en) * 1977-10-26 1979-05-17 Hitachi Ltd Poly-film etching method
JPS5487172A (en) * 1977-12-23 1979-07-11 Hitachi Ltd Manufacture for simiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52141443A (en) * 1976-05-21 1977-11-25 Nippon Electric Co Method of etching films
JPS5461475A (en) * 1977-10-26 1979-05-17 Hitachi Ltd Poly-film etching method
JPS5487172A (en) * 1977-12-23 1979-07-11 Hitachi Ltd Manufacture for simiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57124440A (en) * 1981-01-27 1982-08-03 Nec Corp Compound etching method
JPS5972138A (ja) * 1982-10-19 1984-04-24 Toshiba Corp 半導体装置の製造方法
US4460435A (en) * 1983-12-19 1984-07-17 Rca Corporation Patterning of submicrometer metal silicide structures
US4502915A (en) * 1984-01-23 1985-03-05 Texas Instruments Incorporated Two-step plasma process for selective anisotropic etching of polycrystalline silicon without leaving residue
US4639288A (en) * 1984-11-05 1987-01-27 Advanced Micro Devices, Inc. Process for formation of trench in integrated circuit structure using isotropic and anisotropic etching
US4742026A (en) * 1986-04-30 1988-05-03 Thomson-Csf Method for the selective dry etching of layers of III-V group semiconductive materials
EP0301335A2 (en) * 1987-07-29 1989-02-01 Hitachi, Ltd. Method of dry etching
US4986877A (en) * 1987-07-29 1991-01-22 Hitachi, Ltd. Method of dry etching
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine

Also Published As

Publication number Publication date
JPH0313744B2 (ja) 1991-02-25

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