JPH0220141B2 - - Google Patents
Info
- Publication number
- JPH0220141B2 JPH0220141B2 JP20755683A JP20755683A JPH0220141B2 JP H0220141 B2 JPH0220141 B2 JP H0220141B2 JP 20755683 A JP20755683 A JP 20755683A JP 20755683 A JP20755683 A JP 20755683A JP H0220141 B2 JPH0220141 B2 JP H0220141B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring
- etching
- organic film
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20755683A JPS60100451A (ja) | 1983-11-07 | 1983-11-07 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20755683A JPS60100451A (ja) | 1983-11-07 | 1983-11-07 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60100451A JPS60100451A (ja) | 1985-06-04 |
| JPH0220141B2 true JPH0220141B2 (ko) | 1990-05-08 |
Family
ID=16541688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20755683A Granted JPS60100451A (ja) | 1983-11-07 | 1983-11-07 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60100451A (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2587838B1 (fr) * | 1985-09-20 | 1987-11-27 | Radiotechnique Compelec | Procede pour aplanir la surface d'un dispositif semi-conducteur utilisant du nitrure de silicium comme materiau isolant |
| JPH029120A (ja) * | 1988-06-28 | 1990-01-12 | Tokuda Seisakusho Ltd | 真空処理装置 |
-
1983
- 1983-11-07 JP JP20755683A patent/JPS60100451A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60100451A (ja) | 1985-06-04 |
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