JPH0214782B2 - - Google Patents

Info

Publication number
JPH0214782B2
JPH0214782B2 JP55110906A JP11090680A JPH0214782B2 JP H0214782 B2 JPH0214782 B2 JP H0214782B2 JP 55110906 A JP55110906 A JP 55110906A JP 11090680 A JP11090680 A JP 11090680A JP H0214782 B2 JPH0214782 B2 JP H0214782B2
Authority
JP
Japan
Prior art keywords
oxidation
film
silicon nitride
film pattern
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55110906A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5735341A (en
Inventor
Norio Endo
Hisakazu Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP11090680A priority Critical patent/JPS5735341A/ja
Priority to US06/290,429 priority patent/US4376336A/en
Priority to DE3131746A priority patent/DE3131746C2/de
Publication of JPS5735341A publication Critical patent/JPS5735341A/ja
Publication of JPH0214782B2 publication Critical patent/JPH0214782B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
JP11090680A 1980-08-12 1980-08-12 Method of seperating elements of semiconductor device Granted JPS5735341A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11090680A JPS5735341A (en) 1980-08-12 1980-08-12 Method of seperating elements of semiconductor device
US06/290,429 US4376336A (en) 1980-08-12 1981-08-06 Method for fabricating a semiconductor device
DE3131746A DE3131746C2 (de) 1980-08-12 1981-08-11 Verfahren zur dielektrischen Isolation einer Halbleiterschaltungsanordnung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11090680A JPS5735341A (en) 1980-08-12 1980-08-12 Method of seperating elements of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5735341A JPS5735341A (en) 1982-02-25
JPH0214782B2 true JPH0214782B2 (enExample) 1990-04-10

Family

ID=14547653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11090680A Granted JPS5735341A (en) 1980-08-12 1980-08-12 Method of seperating elements of semiconductor device

Country Status (3)

Country Link
US (1) US4376336A (enExample)
JP (1) JPS5735341A (enExample)
DE (1) DE3131746C2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4512076A (en) * 1982-12-20 1985-04-23 Raytheon Company Semiconductor device fabrication process
US4459321A (en) * 1982-12-30 1984-07-10 International Business Machines Corporation Process for applying closely overlapped mutually protective barrier films
JPS59138379A (ja) * 1983-01-27 1984-08-08 Toshiba Corp 半導体装置の製造方法
US4567640A (en) * 1984-05-22 1986-02-04 Data General Corporation Method of fabricating high density CMOS devices
US4573257A (en) * 1984-09-14 1986-03-04 Motorola, Inc. Method of forming self-aligned implanted channel-stop and buried layer utilizing non-single crystal alignment key
US4574469A (en) * 1984-09-14 1986-03-11 Motorola, Inc. Process for self-aligned buried layer, channel-stop, and isolation
US4583282A (en) * 1984-09-14 1986-04-22 Motorola, Inc. Process for self-aligned buried layer, field guard, and isolation
JPS61164265A (ja) * 1985-01-16 1986-07-24 Nec Corp Ｍｉｓ型半導体集積回路装置
FR2579828A1 (fr) * 1985-03-29 1986-10-03 Thomson Csf Procede d'oxydation localisee pour l'obtention d'oxyde epais
US4713329A (en) * 1985-07-22 1987-12-15 Data General Corporation Well mask for CMOS process
JPH07120701B2 (ja) * 1986-03-13 1995-12-20 ソニー株式会社 半導体装置の製造方法
KR880008448A (ko) * 1986-12-17 1988-08-31 강진구 측면 격리 소자 분리방법
US4814290A (en) * 1987-10-30 1989-03-21 International Business Machines Corporation Method for providing increased dopant concentration in selected regions of semiconductor devices
US5159428A (en) * 1988-09-15 1992-10-27 Texas Instruments Incorporated Sidewall-sealed poly-buffered LOCOS isolation
US4897364A (en) * 1989-02-27 1990-01-30 Motorola, Inc. Method for locos isolation using a framed oxidation mask and a polysilicon buffer layer
US5001082A (en) * 1989-04-12 1991-03-19 Mcnc Self-aligned salicide process for forming semiconductor devices and devices formed thereby
US4927780A (en) * 1989-10-02 1990-05-22 Motorola, Inc. Encapsulation method for localized oxidation of silicon
KR930011458B1 (ko) * 1990-11-17 1993-12-08 삼성전자 주식회사 반도체장치의 필드산화막 형성방법
US5196367A (en) * 1991-05-08 1993-03-23 Industrial Technology Research Institute Modified field isolation process with no channel-stop implant encroachment
US5438016A (en) * 1994-03-02 1995-08-01 Micron Semiconductor, Inc. Method of semiconductor device isolation employing polysilicon layer for field oxide formation
US5866467A (en) * 1995-12-08 1999-02-02 Advanced Micro Devices, Inc. Method of improving oxide isolation in a semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3873373A (en) * 1972-07-06 1975-03-25 Bryan H Hill Fabrication of a semiconductor device
CA1001771A (en) * 1973-01-15 1976-12-14 Fairchild Camera And Instrument Corporation Method of mos transistor manufacture and resulting structure
US3961999A (en) * 1975-06-30 1976-06-08 Ibm Corporation Method for forming recessed dielectric isolation with a minimized "bird's beak" problem
JPS5347782A (en) * 1976-10-13 1978-04-28 Hitachi Ltd Production of semiconductor device
US4179311A (en) * 1977-01-17 1979-12-18 Mostek Corporation Method of stabilizing semiconductor device by converting doped poly-Si to polyoxides
JPS559414A (en) * 1978-07-05 1980-01-23 Toshiba Corp Manufacturing method of semiconductor device
JPS5539611A (en) * 1978-09-13 1980-03-19 Toshiba Corp Manufacturing semiconductor device
US4272308A (en) * 1979-10-10 1981-06-09 Varshney Ramesh C Method of forming recessed isolation oxide layers
US4287661A (en) * 1980-03-26 1981-09-08 International Business Machines Corporation Method for making an improved polysilicon conductor structure utilizing reactive-ion etching and thermal oxidation
JPS571243A (en) * 1980-06-04 1982-01-06 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
DE3131746C2 (de) 1985-02-14
JPS5735341A (en) 1982-02-25
US4376336A (en) 1983-03-15
DE3131746A1 (de) 1982-03-25

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