JPH0128509B2 - - Google Patents
Info
- Publication number
- JPH0128509B2 JPH0128509B2 JP56204520A JP20452081A JPH0128509B2 JP H0128509 B2 JPH0128509 B2 JP H0128509B2 JP 56204520 A JP56204520 A JP 56204520A JP 20452081 A JP20452081 A JP 20452081A JP H0128509 B2 JPH0128509 B2 JP H0128509B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductive layer
- semiconductor substrate
- impurities
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56204520A JPS58106865A (ja) | 1981-12-19 | 1981-12-19 | 半導体素子の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56204520A JPS58106865A (ja) | 1981-12-19 | 1981-12-19 | 半導体素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58106865A JPS58106865A (ja) | 1983-06-25 |
JPH0128509B2 true JPH0128509B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-06-02 |
Family
ID=16491886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56204520A Granted JPS58106865A (ja) | 1981-12-19 | 1981-12-19 | 半導体素子の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58106865A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0116654B1 (de) * | 1983-02-12 | 1986-12-10 | Deutsche ITT Industries GmbH | Verfahren zum Herstellen von bipolaren Planartransistoren |
JPS63114261A (ja) * | 1986-09-11 | 1988-05-19 | フェアチャイルド セミコンダクタ コーポレーション | トランジスタ用の自己整合型ベース分路 |
JPH01119064A (ja) * | 1987-10-31 | 1989-05-11 | Nec Yamagata Ltd | 半導体装置の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53141591A (en) * | 1977-05-16 | 1978-12-09 | Nec Corp | Manufacture of semiconductor device |
JPS5515231A (en) * | 1978-07-19 | 1980-02-02 | Nippon Telegr & Teleph Corp <Ntt> | Manufacturing method of semiconductor device |
JPS5627965A (en) * | 1979-08-15 | 1981-03-18 | Nec Corp | Manufacture of semiconductor device |
-
1981
- 1981-12-19 JP JP56204520A patent/JPS58106865A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58106865A (ja) | 1983-06-25 |