JPH0122353B2 - - Google Patents
Info
- Publication number
- JPH0122353B2 JPH0122353B2 JP55114623A JP11462380A JPH0122353B2 JP H0122353 B2 JPH0122353 B2 JP H0122353B2 JP 55114623 A JP55114623 A JP 55114623A JP 11462380 A JP11462380 A JP 11462380A JP H0122353 B2 JPH0122353 B2 JP H0122353B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- aluminum
- copper
- nickel
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 36
- 239000013077 target material Substances 0.000 claims description 23
- 238000001816 cooling Methods 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 20
- 229910000679 solder Inorganic materials 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 8
- 238000005219 brazing Methods 0.000 claims description 7
- 230000004907 flux Effects 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000007750 plasma spraying Methods 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 229910000906 Bronze Inorganic materials 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910000676 Si alloy Inorganic materials 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 239000010974 bronze Substances 0.000 claims description 5
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 239000011224 oxide ceramic Substances 0.000 claims description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 2
- 239000011247 coating layer Substances 0.000 claims 2
- -1 nickel-aluminum-molybdenum Chemical compound 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 238000009434 installation Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 239000000788 chromium alloy Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
- B23K2035/008—Interlayers, transition pieces for metallurgical bonding of workpieces at least one of the workpieces being of silicium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
- Y10T29/49885—Assembling or joining with coating before or during assembling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Coating By Spraying Or Casting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2933835A DE2933835C2 (de) | 1979-08-21 | 1979-08-21 | Verfahren zum Befestigen von in Scheiben- oder Plattenform vorliegenden Targetmaterialien auf Kühlteller für Aufstäubanlagen |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5633476A JPS5633476A (en) | 1981-04-03 |
JPH0122353B2 true JPH0122353B2 (US07534539-20090519-C00280.png) | 1989-04-26 |
Family
ID=6078955
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11462380A Granted JPS5633476A (en) | 1979-08-21 | 1980-08-20 | Fixing of target material |
Country Status (4)
Country | Link |
---|---|
US (1) | US4341816A (US07534539-20090519-C00280.png) |
EP (1) | EP0024355B1 (US07534539-20090519-C00280.png) |
JP (1) | JPS5633476A (US07534539-20090519-C00280.png) |
DE (1) | DE2933835C2 (US07534539-20090519-C00280.png) |
Families Citing this family (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57188680A (en) * | 1981-05-16 | 1982-11-19 | Kemisuton:Kk | Target for sputtering and production thereof |
US4613069A (en) * | 1981-11-23 | 1986-09-23 | The United States Of America As Represented By The Secretary Of The Interior | Method for soldering aluminum and magnesium |
DE3148354A1 (de) * | 1981-12-07 | 1983-06-09 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zur kathodenzerstaeubung eines metalles |
DE3233215C1 (de) * | 1982-09-07 | 1984-04-19 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Befestigen von in Scheiben- oder Plattenform vorliegenden Targetmaterialien auf Kuehlteller fuer Aufstaeubanlagen |
JPS5956971A (ja) * | 1982-09-27 | 1984-04-02 | Tanaka Kikinzoku Kogyo Kk | スパツタリング用タ−ゲツトの製造方法 |
US4545882A (en) * | 1983-09-02 | 1985-10-08 | Shatterproof Glass Corporation | Method and apparatus for detecting sputtering target depletion |
US4479862A (en) * | 1984-01-09 | 1984-10-30 | Vertimag Systems Corporation | Sputtering |
JPS60181269A (ja) * | 1984-02-27 | 1985-09-14 | Matsushita Electric Ind Co Ltd | スパツタ−タ−ゲツト |
US5215639A (en) * | 1984-10-09 | 1993-06-01 | Genus, Inc. | Composite sputtering target structures and process for producing such structures |
US4597847A (en) * | 1984-10-09 | 1986-07-01 | Iodep, Inc. | Non-magnetic sputtering target |
JPS61227166A (ja) * | 1985-03-29 | 1986-10-09 | Mitsubishi Metal Corp | スパツタリング用ビスマスまたはビスマス含有タ−ゲツト |
US4623555A (en) * | 1985-04-25 | 1986-11-18 | Aluminum Company Of America | Connection method |
US4596354A (en) * | 1985-07-03 | 1986-06-24 | The United States Of America As Represented By The United States Department Of Energy | Oxidation resistant filler metals for direct brazing of structural ceramics |
JPS62158862A (ja) * | 1986-01-08 | 1987-07-14 | Matsushita Electric Ind Co Ltd | スパツタリングタ−ゲツト |
JPS62222060A (ja) * | 1986-03-20 | 1987-09-30 | Hitachi Metals Ltd | スパツタリング用タ−ゲツト |
JPS63121662A (ja) * | 1987-10-14 | 1988-05-25 | Hitachi Metals Ltd | スパッタリング用ターゲット |
US4849247A (en) * | 1987-12-14 | 1989-07-18 | Sundstrand Corporation | Enhanced adhesion of substrate materials using ion-beam implantation |
DE3839775C2 (de) * | 1988-11-25 | 1998-12-24 | Vaw Ver Aluminium Werke Ag | Kathoden-Zerstäubungstarget und Verfahren zu seiner Herstellung |
JPH0313570A (ja) * | 1989-06-09 | 1991-01-22 | Mitsubishi Electric Corp | 半導体製造装置及び半導体製造装置用ターゲット |
US5198308A (en) * | 1990-12-21 | 1993-03-30 | Zimmer, Inc. | Titanium porous surface bonded to a cobalt-based alloy substrate in an orthopaedic implant device |
DE4107660C2 (de) * | 1991-03-09 | 1995-05-04 | Bosch Gmbh Robert | Verfahren zur Montage von Silizium-Plättchen auf metallischen Montageflächen |
JPH0586462A (ja) * | 1991-06-28 | 1993-04-06 | Mitsubishi Materials Corp | スパツタリング用ターゲツト及びその製造方法 |
US5143590A (en) * | 1991-07-10 | 1992-09-01 | Johnson Matthey Inc. | Method of manufacturing sputtering target assembly |
FR2680799B1 (fr) * | 1991-09-03 | 1993-10-29 | Elf Aquitaine Ste Nale | Element de cible pour pulverisation cathodique, procede de preparation dudit element et cibles, notamment de grande surface, realisees a partir de cet element. |
DE4138029A1 (de) * | 1991-11-19 | 1993-05-27 | Thyssen Guss Ag | Targetkuehlung |
FR2685011B1 (fr) * | 1991-12-13 | 1994-02-04 | Elf Aquitaine Ste Nale | Procede de preparation d'un element de cible pour pulverisation cathodique et cibles, notamment de grande surface, realisees a partir de cet element. |
US5282943A (en) * | 1992-06-10 | 1994-02-01 | Tosoh Smd, Inc. | Method of bonding a titanium containing sputter target to a backing plate and bonded target/backing plate assemblies produced thereby |
US5693203A (en) * | 1992-09-29 | 1997-12-02 | Japan Energy Corporation | Sputtering target assembly having solid-phase bonded interface |
US5965278A (en) * | 1993-04-02 | 1999-10-12 | Ppg Industries Ohio, Inc. | Method of making cathode targets comprising silicon |
US5428882A (en) * | 1993-04-05 | 1995-07-04 | The Regents Of The University Of California | Process for the fabrication of aluminum metallized pyrolytic graphite sputtering targets |
US5342496A (en) * | 1993-05-18 | 1994-08-30 | Tosoh Smd, Inc. | Method of welding sputtering target/backing plate assemblies |
US5567512A (en) * | 1993-10-08 | 1996-10-22 | Hmt Technology Corporation | Thin carbon overcoat and method of its making |
US5687600A (en) * | 1994-10-26 | 1997-11-18 | Johnson Matthey Electronics, Inc. | Metal sputtering target assembly |
US5593082A (en) * | 1994-11-15 | 1997-01-14 | Tosoh Smd, Inc. | Methods of bonding targets to backing plate members using solder pastes and target/backing plate assemblies bonded thereby |
WO1996015283A1 (en) * | 1994-11-15 | 1996-05-23 | Tosoh Smd, Inc. | Method of bonding targets to backing plate member |
US5879524A (en) * | 1996-02-29 | 1999-03-09 | Sony Corporation | Composite backing plate for a sputtering target |
US6099974A (en) * | 1997-07-16 | 2000-08-08 | Thermal Spray Technologies, Inc. | Coating that enables soldering to non-solderable surfaces |
US6579431B1 (en) | 1998-01-14 | 2003-06-17 | Tosoh Smd, Inc. | Diffusion bonding of high purity metals and metal alloys to aluminum backing plates using nickel or nickel alloy interlayers |
WO2000014415A2 (en) | 1998-09-03 | 2000-03-16 | Lucas Novasensor | Proportional micromechanical device |
US6523560B1 (en) | 1998-09-03 | 2003-02-25 | General Electric Corporation | Microvalve with pressure equalization |
US7011378B2 (en) | 1998-09-03 | 2006-03-14 | Ge Novasensor, Inc. | Proportional micromechanical valve |
US6774339B1 (en) * | 1999-11-09 | 2004-08-10 | Tosoh Smd, Inc. | Hermetic sealing of target/backing plate assemblies using electron beam melted indium or tin |
US6845962B1 (en) * | 2000-03-22 | 2005-01-25 | Kelsey-Hayes Company | Thermally actuated microvalve device |
US6287437B1 (en) | 2000-05-05 | 2001-09-11 | Alcatel | Recessed bonding of target for RF diode sputtering |
US6619537B1 (en) * | 2000-06-12 | 2003-09-16 | Tosoh Smd, Inc. | Diffusion bonding of copper sputtering targets to backing plates using nickel alloy interlayers |
US6505811B1 (en) | 2000-06-27 | 2003-01-14 | Kelsey-Hayes Company | High-pressure fluid control valve assembly having a microvalve device attached to fluid distributing substrate |
KR20030024868A (ko) * | 2000-08-17 | 2003-03-26 | 토소우 에스엠디, 인크 | 수명-종료-표시를 갖는 고순도 스퍼터 타켓과 이의 제조방법 |
US7175802B2 (en) * | 2001-09-17 | 2007-02-13 | Heraeus, Inc. | Refurbishing spent sputtering targets |
AU2003224044A1 (en) † | 2002-04-11 | 2003-10-20 | Grillo-Werke Ag | Method for connecting parts |
TWI223673B (en) * | 2002-07-25 | 2004-11-11 | Hitachi Metals Ltd | Target and manufacturing method thereof |
US20070251586A1 (en) * | 2003-11-24 | 2007-11-01 | Fuller Edward N | Electro-pneumatic control valve with microvalve pilot |
US8011388B2 (en) * | 2003-11-24 | 2011-09-06 | Microstaq, INC | Thermally actuated microvalve with multiple fluid ports |
JP2007512489A (ja) * | 2003-11-24 | 2007-05-17 | アルーマナ、マイクロウ、エルエルシー | 可変容量形コンプレッサの制御に適したマイクロバルブ・デバイス |
JP2007525630A (ja) * | 2004-02-27 | 2007-09-06 | アルーマナ、マイクロウ、エルエルシー | ハイブリッド・マイクロ/マクロ・プレート弁 |
WO2005091820A2 (en) * | 2004-03-05 | 2005-10-06 | Alumina Micro Llc | Selective bonding for forming a microvalve |
US20050236270A1 (en) * | 2004-04-23 | 2005-10-27 | Heraeus, Inc. | Controlled cooling of sputter targets |
US7156365B2 (en) * | 2004-07-27 | 2007-01-02 | Kelsey-Hayes Company | Method of controlling microvalve actuator |
US20090123300A1 (en) * | 2005-01-14 | 2009-05-14 | Alumina Micro Llc | System and method for controlling a variable displacement compressor |
US20060289304A1 (en) * | 2005-06-22 | 2006-12-28 | Guardian Industries Corp. | Sputtering target with slow-sputter layer under target material |
DE112007003035T5 (de) | 2006-12-15 | 2009-11-05 | Microstaq, Inc., Austin | Mikroventilvorrichtung |
WO2008121369A1 (en) | 2007-03-30 | 2008-10-09 | Microstaq, Inc. | Pilot operated micro spool valve |
US20080236738A1 (en) * | 2007-03-30 | 2008-10-02 | Chi-Fung Lo | Bonded sputtering target and methods of manufacture |
US8387659B2 (en) | 2007-03-31 | 2013-03-05 | Dunan Microstaq, Inc. | Pilot operated spool valve |
US8662468B2 (en) * | 2008-08-09 | 2014-03-04 | Dunan Microstaq, Inc. | Microvalve device |
US8113482B2 (en) * | 2008-08-12 | 2012-02-14 | DunAn Microstaq | Microvalve device with improved fluid routing |
CN102308131B (zh) | 2008-12-06 | 2014-01-08 | 盾安美斯泰克有限公司 | 流体流动控制组件 |
CN101543923B (zh) * | 2009-03-12 | 2012-07-04 | 宁波江丰电子材料有限公司 | 靶材与背板的焊接方法 |
WO2010117874A2 (en) | 2009-04-05 | 2010-10-14 | Microstaq, Inc. | Method and structure for optimizing heat exchanger performance |
US20120145252A1 (en) | 2009-08-17 | 2012-06-14 | Dunan Microstaq, Inc. | Micromachined Device and Control Method |
US8956884B2 (en) | 2010-01-28 | 2015-02-17 | Dunan Microstaq, Inc. | Process for reconditioning semiconductor surface to facilitate bonding |
US9006844B2 (en) | 2010-01-28 | 2015-04-14 | Dunan Microstaq, Inc. | Process and structure for high temperature selective fusion bonding |
US8996141B1 (en) | 2010-08-26 | 2015-03-31 | Dunan Microstaq, Inc. | Adaptive predictive functional controller |
JP6051492B2 (ja) | 2011-02-14 | 2016-12-27 | トーソー エスエムディー,インク. | 拡散接合スパッター・ターゲット・アセンブリの製造方法 |
US8925793B2 (en) | 2012-01-05 | 2015-01-06 | Dunan Microstaq, Inc. | Method for making a solder joint |
US9140613B2 (en) | 2012-03-16 | 2015-09-22 | Zhejiang Dunan Hetian Metal Co., Ltd. | Superheat sensor |
CN102814585B (zh) * | 2012-07-09 | 2015-06-10 | 有研亿金新材料股份有限公司 | 一种靶材与背板焊接方法 |
US9188375B2 (en) | 2013-12-04 | 2015-11-17 | Zhejiang Dunan Hetian Metal Co., Ltd. | Control element and check valve assembly |
CN104690417B (zh) * | 2013-12-05 | 2017-09-29 | 有研亿金新材料股份有限公司 | 一种镍或镍合金靶材与背板的焊接方法 |
CN106471151B (zh) * | 2014-06-27 | 2019-06-18 | 攀时复合材料有限公司 | 溅镀靶 |
CN112458419B (zh) * | 2020-11-25 | 2023-04-11 | 南京工程学院 | 一种多元难熔金属元素共掺杂纳米NiAl基合金薄膜及其制备方法和应用 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5125532U (US07534539-20090519-C00280.png) * | 1974-08-15 | 1976-02-25 |
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GB624369A (en) * | 1942-11-18 | 1949-06-07 | Philips Nv | Improvements in and relating to soldering metals and alloys, more particularly thosethat are difficult to solder |
GB698173A (en) * | 1949-08-12 | 1953-10-07 | Martin Littmann | Improvements relating to the joining of metal or non-metal parts by brazing, soldering, or casting-on |
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NL130204C (US07534539-20090519-C00280.png) * | 1964-08-28 | 1900-01-01 | ||
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DE2361564A1 (de) * | 1973-12-11 | 1975-06-12 | Bbc Brown Boveri & Cie | Flaechenhafte loetverbindung |
JPS51107251A (en) * | 1975-03-19 | 1976-09-22 | Oki Electric Ind Co Ltd | Handazuke moshikuha rozukejinoshitajishorihoho |
US4011981A (en) * | 1975-03-27 | 1977-03-15 | Olin Corporation | Process for bonding titanium, tantalum, and alloys thereof |
US4009090A (en) * | 1975-12-03 | 1977-02-22 | Shatterproof Glass Corporation | Sputter-coating of glass sheets or other substrates |
US4209375A (en) * | 1979-08-02 | 1980-06-24 | The United States Of America As Represented By The United States Department Of Energy | Sputter target |
-
1979
- 1979-08-21 DE DE2933835A patent/DE2933835C2/de not_active Expired
-
1980
- 1980-07-11 US US06/168,653 patent/US4341816A/en not_active Expired - Lifetime
- 1980-08-18 EP EP80104911A patent/EP0024355B1/de not_active Expired
- 1980-08-20 JP JP11462380A patent/JPS5633476A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5125532U (US07534539-20090519-C00280.png) * | 1974-08-15 | 1976-02-25 |
Also Published As
Publication number | Publication date |
---|---|
JPS5633476A (en) | 1981-04-03 |
EP0024355B1 (de) | 1985-03-20 |
DE2933835C2 (de) | 1987-02-19 |
EP0024355A1 (de) | 1981-03-04 |
US4341816A (en) | 1982-07-27 |
DE2933835A1 (de) | 1981-03-26 |
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