JP7512348B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP7512348B2 JP7512348B2 JP2022178306A JP2022178306A JP7512348B2 JP 7512348 B2 JP7512348 B2 JP 7512348B2 JP 2022178306 A JP2022178306 A JP 2022178306A JP 2022178306 A JP2022178306 A JP 2022178306A JP 7512348 B2 JP7512348 B2 JP 7512348B2
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- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 58
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- 239000001307 helium Substances 0.000 description 2
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- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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Description
2 SiC半導体層
5 SiC半導体基板
6 SiCエピタキシャル層
12 ゲート酸化層(SiO2層)
13 ゲート電極層
21 ゲート酸化層の接続面
22 ゲート酸化層の非接続面
23 炭素密度漸減領域
24 低炭素密度領域
25 界面領域
51 半導体装置
81 半導体装置
Claims (18)
- 第1導電型のSiC半導体層と、
前記SiC半導体層の表面に形成された第2導電型の複数のボディ領域と、
複数の前記ボディ領域の表面側にそれぞれ形成された第1導電型の複数のソース領域と、
隣り合う複数の前記ソース領域を跨ぐように前記SiC半導体層上に形成され、前記SiC半導体層に接する接続面、および、前記接続面の反対側に位置する非接続面を有するSiO2層と、
前記SiO2層の前記非接続面に配置され、前記非接続面の一部が露出するように配置されたゲート電極と、
前記SiO2層の前記非接続面の露出部および前記ゲート電極を覆う層間絶縁層と、を有し、
前記SiO2層は、前記接続面から前記非接続面に向けて炭素密度が漸減する炭素密度漸減領域と、
前記炭素密度漸減領域の前記非接続面側に形成され、炭素密度が前記炭素密度漸減領域よりも小さい低炭素密度領域と、を有し、
前記低炭素密度領域は、前記炭素密度漸減領域の厚さと同等以上の厚さを有する、半導体装置。 - 前記SiC半導体層は、1.0×1022cm-3以上の炭素密度を有する、請求項1に記載の半導体装置。
- 前記炭素密度漸減領域の炭素密度は、前記SiC半導体層の炭素密度から漸減する、請求項1または2に記載の半導体装置。
- 前記SiO2層の前記接続面側の領域の窒素原子密度は、前記SiO2層の前記非接続面側の領域の窒素原子密度よりも大きい、請求項1に記載の半導体装置。
- 前記SiC半導体層において前記SiO2層に接する領域に形成され、伝導帯端からのエネルギー準位が0.2eV以上0.5eV以下の範囲において4.0×1011eV-1・cm-2以下である界面準位密度を有する界面領域をさらに含む、請求項1~4のいずれか一項に記載の半導体装置。
- 前記SiO2層は、9.0MV・cm-1以上のブレークダウン電界強度を有している、請求項1~5のいずれか一項に記載の半導体装置。
- 前記SiO2層は、20nm以上の厚さを有している、請求項1~6のいずれか一項に記載の半導体装置。
- 前記SiC半導体層は、SiC半導体基板、および、前記SiC半導体基板の上に形成されたSiCエピタキシャル層を含み、
前記ボディ領域は、前記SiCエピタキシャル層の表面領域に形成されている、請求項1に記載の半導体装置。 - 前記SiCエピタキシャル層は、前記SiC半導体基板の第1導電型不純物の濃度よりも低い第1導電型不純物濃度を有する、請求項8に記載の半導体装置。
- 第1導電型のSiC半導体層と、
前記SiC半導体層の表面に形成された第2導電型のボディ領域と、
前記ボディ領域の表面側に形成された第1導電型のソース領域と、
前記ソース領域および前記ボディ領域を貫通するように形成されたトレンチと、
前記トレンチの内側から前記SiC半導体層の表面にかけて形成され、前記SiC半導体層と接する接続面、および、前記接続面の反対側に位置する非接続面を有するSiO2層と、
前記SiO2層を介して前記トレンチ内に配置されたゲート電極と、
前記SiO2層の前記非接続面の露出部分と前記ゲート電極とを覆う層間絶縁層とを有し、
前記SiO2層は、前記接続面から前記非接続面に向けて炭素密度が漸減する炭素密度漸減領域と、
前記炭素密度漸減領域の前記非接続面側に形成され、炭素密度が前記炭素密度漸減領域よりも小さい低炭素密度領域と、を有し、
前記低炭素密度領域は、前記炭素密度漸減領域の厚さと同等以上の厚さを有する、半導体装置。 - 前記SiC半導体層は、1.0×1022cm-3以上の炭素密度を有する、請求項10に記載の半導体装置。
- 前記炭素密度漸減領域の炭素密度は、前記SiC半導体層の炭素密度から漸減する、請求項10または11に記載の半導体装置。
- 前記SiO2層の前記接続面側の領域の窒素原子密度は、前記SiO2層の前記非接続面側の領域の窒素原子密度よりも大きい、請求項10に記載の半導体装置。
- 前記SiC半導体層は、4H-SiC単結晶を含み、前記4H-SiC単結晶の[0001]面から<11-20>方向に対して10°以下のオフ角を有する主面を含む、請求項1または10に記載の半導体装置。
- 前記SiC半導体層の表面および前記層間絶縁層を覆うようにソース電極が形成されており、
前記ソース電極の上面は、前記ゲート電極が形成されていない領域において、前記SiC半導体層側に窪んでいる、請求項1または10に記載の半導体装置。 - 前記層間絶縁層の端面は前記SiO2層の端面と面一であり、
前記層間絶縁層は前記SiO2層の前記非接続面上のみを覆う、請求項1または10に記載の半導体装置。 - SiC半導体層を用意する工程と、
前記SiC半導体層の上にSiO2層を形成する工程と、
低酸素分圧雰囲気下でアニール処理を施すことにより、前記SiO2層に酸素原子を導入する酸素原子導入工程と、を含み、
前記酸素原子導入工程に先立って、窒素原子を含む雰囲気下でアニール処理を施すことにより、前記SiO 2 層に窒素原子を導入する窒素原子導入工程をさらに含む、半導体装置の製造方法。 - 前記窒素原子導入工程は、酸素原子および窒素原子を含む雰囲気下でアニール処理を施す工程を含む、請求項17に記載の半導体装置の製造方法。
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