JP7477404B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP7477404B2 JP7477404B2 JP2020148587A JP2020148587A JP7477404B2 JP 7477404 B2 JP7477404 B2 JP 7477404B2 JP 2020148587 A JP2020148587 A JP 2020148587A JP 2020148587 A JP2020148587 A JP 2020148587A JP 7477404 B2 JP7477404 B2 JP 7477404B2
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Description
すなわち、半導体装置の製造方法は、主面に設けられた複数の端子とワイヤで電気的に接続された半導体チップを有する複数のデバイス領域を備える基板を準備する工程と、基板を搬送すると共に、基板の主面側に大気圧中で生成されたプラズマを照射する工程と、基板を搬送すると共に、基板の主面側を撮像する工程と、半導体チップおよびワイヤを樹脂で封止して封止体を形成する工程と、を含む。
まず、半導体装置の構成例について図1を用いて説明する。図1は実施形態における半導体装置の概略断面図である。
次に、図1を用いて説明した半導体装置1の製造方法について、図2を用いて説明する。図2は図1を用いて説明した半導体装置の組立工程のフローを示す説明図である。
半導体装置1を製造するには、まず、基板準備工程S1において図3に示すような基板20を準備する。また、半導体チップ準備工程S2において半導体チップ3を準備する。図3は図2に示す基板準備工程で準備する基板の概略構造を示す平面図である。基板2と半導体チップ3とは、どちらを先に準備してもよく、また、同時に準備してもよい。
次に、図2に示すダイボンディング工程S3では、基板20のデバイス領域22の上面20a上に半導体チップ3が搭載される。図4は、図3に示す基板上に半導体チップが搭載された状態を示す断面図であり、図3に示すA-A線に沿う断面に相当する断面図である。なお、図4では、見易さのため、図1に示す接着材7の図示を省略している。ただし、図4に示す複数のデバイス領域22のそれぞれにおいて、図1に示すように、半導体チップ3の下に接着材7が配置される。
次に、図2に示すプラズマクリーニング工程S4においては、例えば、真空プラズマ処理装置を用いる。図5は図2に示すプラズマクリーニング工程に用いられるプラズマ処理装置の一例を示す図である。
次に、図2に示すワイヤボンディング工程S5として、図6に示すように、半導体チップ3と基板20のデバイス領域22とを電気的に接続する。図6は、図3に示す基板上の半導体チップと基板とをワイヤを介して電気的に接続した状態を示す断面図であり、図3に示すA-A線に沿う断面に相当する断面図である。
次に、図2に示す封止工程S6においては、例えば、図7に示すモールド装置を用いる。図7は図2に示す封止工程に用いられるモールド装置の一例を示す模式図である。図8は図7に示す第一搬送ユニット、プラズマ発生ユニットおよび認識用カメラを示す図である。図9は図7に示す第一搬送ユニットおよびプラズマ発生ユニットの配置を示す図であり、図6に示す基板の上面側が下方を向いた状態にある。図10は図7に示す第一搬送ユニットおよび認識用カメラの配置を示す図であり、図6に示す基板の上面側が下方を向いた状態にある。図11は図7に第二搬送ユニットによるモールドされた基板の搬送状態を示す図である。
次に、図2に示すプラズマクリーニング工程S61では、図9に示すように、ローダ部101から供給される基板20を搬送しながらプラズマ発生ユニット103を用いてプラズマクリーニングを行う。
次に、図2に示す検査工程S62では、図10に示すように、プラズマクリーニングが行われた基板20を搬送しながら認識用カメラ104を用いて基板20等の外見検査等を行う。
次に、図2に示すモールド工程S63として、図6に示す半導体チップ3を樹脂で封止して封止体を形成する。モールド工程S63はモールド装置100のモールド部105において行われる。図16は、図6に示す基板の上面側に封止体が形成された状態における断面図である。図17は図16に示す断面図とは異なる面の断面図であり、図3のB-B線に沿った断面に相当する断面図である。
次に、図2に示すボールマウント工程S7として、基板20の下面20bに形成された複数のランド2f(図1参照)に複数の半田ボール6を接合する。本工程では、基板20の下面20bにおいて露出する複数のランド2fのそれぞれの上に半田ボール6を配置した後、加熱することで複数の半田ボール6とランド2fとを接合する。本工程により、複数の半田ボール6は、基板20を介して半導体チップ3と電気的に接続される。ただし、本実施形態で説明する技術は、半田ボール6を接合した、いわゆるBGA(Ball Grid Array)型の半導体装置に限って適用させるものではない。例えば、本実施形態に対する変形例としては、半田ボール6を形成せず、ランド2fを露出させた状態、またはランド2fに半田ボール6よりも薄く半田ペーストを塗布した状態で出荷する半導体装置に適用することができる。この半導体装置は、いわゆるLGA(Land Grid Array)型の半導体装置である。
次に、図2に示す個片化工程S8として、図3に示す複数のデバイス領域22の間のそれぞれの周囲を囲む切断領域21bに沿って基板20および封止体4を切断し、複数のデバイス領域22のそれぞれを個片化する。より詳細には、個片化工程S8では、ダイシングブレードと呼ばれる切削治具を用いて、基板20の切断領域21bを切削加工することにより、基板20を切断する。このため、切断領域21bは、延在方向と交差する方向に、数百μm程度の幅を有している。
2e:端子
3:半導体チップ
4:封止体
5:ワイヤ
20:基板
20a:上面(主面)
22:デバイス領域
Claims (10)
- (a)主面に設けられた複数の端子と、前記主面上に搭載され、かつ前記端子とワイヤで電気的に接続された半導体チップと、を有する複数のデバイス領域を備える基板を準備する工程と、
(b)前記(a)工程の後、前記基板の前記主面が下方を向いた状態で前記基板を搬送すると共に、前記基板の前記主面側に大気圧中で生成されたプラズマを下方から照射する工程と、
(c)前記(b)工程の後、前記基板の前記主面が下方を向いた状態で前記基板を搬送すると共に、前記基板の前記主面側を下方から撮像する工程と、
(d)前記(c)工程の後、前記基板の前記主面が下方を向いた状態で前記半導体チップおよび前記ワイヤを樹脂で封止して封止体を形成する工程と、
を含む、半導体装置の製造方法。 - 請求項1の半導体装置の製造方法において、
前記(a)工程の前、前記基板は前記基板の表面のソルダレジストに含まれる油脂成分または有機溶剤の不純物がガスとして放出される温度以上に加熱される、半導体装置の製造方法。 - 請求項1の半導体装置の製造方法において、
前記(b)工程は、アルゴンと酸素との混合ガスを供給して前記プラズマを生成する、半導体装置の製造方法。 - 請求項1の半導体装置の製造方法において、
前記(b)工程は、前記プラズマを前記基板に複数回照射し、1回につき0.1秒照射する、半導体装置の製造方法。 - 請求項1の半導体装置の製造方法において、
前記(b)工程は、前記プラズマを前記基板の前記主面に対して垂直に照射する、半導体装置の製造方法。 - 請求項1の半導体装置の製造方法において、
前記(b)工程は、前記プラズマを前記基板の前記主面に対して斜めに照射する、半導体装置の製造方法。 - 請求項1の半導体装置の製造方法において、
前記(c)工程は、撮像した画像に基づいて前記ワイヤの状態、異物の有無を検査する、半導体装置の製造方法。 - 請求項7の半導体装置の製造方法において、
前記(c)工程は、撮像した画像に基づいて樹脂量算出のための前記半導体チップの数の計数、前記半導体チップが前記基板に搭載されているかどうの目抜けチェックを行う、半導体装置の製造方法。 - 請求項8の半導体装置の製造方法において、
前記(d)工程は、
(d1)第一型と前記第一型と対向する位置に配置されるキャビティを備える第二型との間に前記基板を配置して、前記基板の前記主面が下方を向いた状態で前記第一型が前記基板を保持する工程と、
(d2)前記(d1)工程の後、前記第二型の前記キャビティ内に樹脂を供給する工程と、
(d3)前記(d1)工程および前記(d2)工程の後、前記半導体チップ、前記ワイヤおよび前記基板の前記主面が、前記キャビティ内の前記樹脂に覆われるように、前記第一型と前記第二型の距離を近づける工程と、
(d4)前記樹脂を硬化させることにより、前記封止体を形成する工程と、
を含む、半導体装置の製造方法。 - 主面に設けられた複数の端子と、前記主面上に搭載され、かつ前記端子とワイヤで電気的に接続された半導体チップと、を有する複数のデバイス領域を備える基板が搬入されるローダ部と、前記基板を搬送する基板搬送ユニットと、前記基板の前記主面と対向して設けられ、大気中でプラズマを生成するプラズマ発生ユニットと、前記基板の前記主面と対向して設けられ、前記基板、前記半導体チップおよび前記ワイヤを撮像する認識用カメラと、前記半導体チップおよび前記ワイヤを樹脂で封止して封止体を形成するモールド部と、を備える半導体製造装置に前記基板を搬入する工程と、
前記基板搬送ユニットにより前記ローダ部側から前記認識用カメラ側に前記基板の前記主面が下方を向いた状態で前記基板を搬送するのと並行して、前記プラズマ発生ユニットにより前記プラズマを前記基板の前記主面側に向けて照射する工程と、
前記基板搬送ユニットにより前記プラズマ発生ユニット側から前記モールド部側に前記基板の前記主面が下方を向いた状態で前記基板を搬送するのと並行して、前記認識用カメラにより前記基板の前記主面側を撮像する工程と、
前記基板の前記主面が下方を向いた状態で前記半導体チップおよび前記ワイヤを樹脂で封止して封止体を形成する工程と、
を含む、半導体装置の製造方法。
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