JP7466773B1 - 光モジュール - Google Patents

光モジュール Download PDF

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Publication number
JP7466773B1
JP7466773B1 JP2023525029A JP2023525029A JP7466773B1 JP 7466773 B1 JP7466773 B1 JP 7466773B1 JP 2023525029 A JP2023525029 A JP 2023525029A JP 2023525029 A JP2023525029 A JP 2023525029A JP 7466773 B1 JP7466773 B1 JP 7466773B1
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JP
Japan
Prior art keywords
optical
section
capacitor
submount
stem
Prior art date
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JP2023525029A
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English (en)
Japanese (ja)
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JPWO2024134864A1 (https=
JPWO2024134864A5 (https=
Inventor
誠二 中野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2024005030A priority Critical patent/JP7734768B2/ja
Application granted granted Critical
Publication of JP7466773B1 publication Critical patent/JP7466773B1/ja
Publication of JPWO2024134864A1 publication Critical patent/JPWO2024134864A1/ja
Publication of JPWO2024134864A5 publication Critical patent/JPWO2024134864A5/ja
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • H01S5/02212Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
JP2023525029A 2022-12-23 2022-12-23 光モジュール Active JP7466773B1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024005030A JP7734768B2 (ja) 2022-12-23 2024-01-17 光モジュール

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/047584 WO2024134864A1 (ja) 2022-12-23 2022-12-23 光モジュール

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024005030A Division JP7734768B2 (ja) 2022-12-23 2024-01-17 光モジュール

Publications (3)

Publication Number Publication Date
JP7466773B1 true JP7466773B1 (ja) 2024-04-12
JPWO2024134864A1 JPWO2024134864A1 (https=) 2024-06-27
JPWO2024134864A5 JPWO2024134864A5 (https=) 2024-11-19

Family

ID=90622478

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023525029A Active JP7466773B1 (ja) 2022-12-23 2022-12-23 光モジュール
JP2024005030A Active JP7734768B2 (ja) 2022-12-23 2024-01-17 光モジュール

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024005030A Active JP7734768B2 (ja) 2022-12-23 2024-01-17 光モジュール

Country Status (4)

Country Link
JP (2) JP7466773B1 (https=)
CN (1) CN120345142A (https=)
TW (1) TWI870154B (https=)
WO (1) WO2024134864A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025229704A1 (ja) * 2024-04-30 2025-11-06 三菱電機株式会社 光モジュール

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7745811B1 (ja) * 2024-12-20 2025-09-29 三菱電機株式会社 Can型光モジュール

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001209017A (ja) 1999-11-15 2001-08-03 Mitsubishi Electric Corp 光電変換半導体装置
US20030136972A1 (en) 2002-01-09 2003-07-24 Bernhard Stegmuller Optoelectronic module
JP2008227154A (ja) 2007-03-13 2008-09-25 Fujitsu Ltd 光半導体素子の製造方法
JP2015088641A (ja) 2013-10-31 2015-05-07 三菱電機株式会社 光モジュール
JP2018073940A (ja) 2016-10-27 2018-05-10 住友電工デバイス・イノベーション株式会社 半導体レーザ装置の動作条件決定方法
JP2019033116A (ja) 2017-08-04 2019-02-28 日本電信電話株式会社 半導体光集積素子
JP2019057543A (ja) 2017-09-19 2019-04-11 日本電信電話株式会社 半導体光集積素子
WO2019155602A1 (ja) 2018-02-09 2019-08-15 三菱電機株式会社 光モジュール
WO2021210217A1 (ja) 2020-04-15 2021-10-21 株式会社村田製作所 レーザダイオード駆動回路
JP2021174877A (ja) 2020-04-24 2021-11-01 CIG Photonics Japan株式会社 光モジュール
JP2022099537A (ja) 2020-12-23 2022-07-05 CIG Photonics Japan株式会社 光モジュール
WO2022230053A1 (ja) 2021-04-27 2022-11-03 三菱電機株式会社 半導体レーザ光源装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04258107A (ja) * 1991-02-13 1992-09-14 Fujitsu Ltd チップ型コンデンサの実装構造およびその実装方法
DE19501236C2 (de) * 1995-01-17 1996-11-14 Ldt Gmbh & Co Verstärker
JP4002231B2 (ja) * 2003-11-12 2007-10-31 浜松ホトニクス株式会社 高周波信号伝送用光モジュール及びその製造方法
JP5823921B2 (ja) * 2012-06-13 2015-11-25 日本電信電話株式会社 半導体光集積素子
JPWO2016136183A1 (ja) * 2015-02-23 2017-07-20 日本電信電話株式会社 Soa集積ea−dfbレーザ及びその駆動方法
JP6077613B1 (ja) * 2015-09-02 2017-02-08 日本電信電話株式会社 光トリガパルス発生器
JP2019021866A (ja) * 2017-07-21 2019-02-07 住友電工デバイス・イノベーション株式会社 半導体レーザ装置
JP2019219537A (ja) * 2018-06-20 2019-12-26 ルネサスエレクトロニクス株式会社 半導体装置
CN109417272B (zh) * 2018-09-20 2020-10-09 索尔思光电(成都)有限公司 用于光发射器的抗阻匹配电路及其制造和使用方法
WO2021059447A1 (ja) * 2019-09-26 2021-04-01 日本電信電話株式会社 光送信器

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001209017A (ja) 1999-11-15 2001-08-03 Mitsubishi Electric Corp 光電変換半導体装置
US20030136972A1 (en) 2002-01-09 2003-07-24 Bernhard Stegmuller Optoelectronic module
JP2008227154A (ja) 2007-03-13 2008-09-25 Fujitsu Ltd 光半導体素子の製造方法
JP2015088641A (ja) 2013-10-31 2015-05-07 三菱電機株式会社 光モジュール
JP2018073940A (ja) 2016-10-27 2018-05-10 住友電工デバイス・イノベーション株式会社 半導体レーザ装置の動作条件決定方法
JP2019033116A (ja) 2017-08-04 2019-02-28 日本電信電話株式会社 半導体光集積素子
JP2019057543A (ja) 2017-09-19 2019-04-11 日本電信電話株式会社 半導体光集積素子
WO2019155602A1 (ja) 2018-02-09 2019-08-15 三菱電機株式会社 光モジュール
WO2021210217A1 (ja) 2020-04-15 2021-10-21 株式会社村田製作所 レーザダイオード駆動回路
JP2021174877A (ja) 2020-04-24 2021-11-01 CIG Photonics Japan株式会社 光モジュール
JP2022099537A (ja) 2020-12-23 2022-07-05 CIG Photonics Japan株式会社 光モジュール
WO2022230053A1 (ja) 2021-04-27 2022-11-03 三菱電機株式会社 半導体レーザ光源装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025229704A1 (ja) * 2024-04-30 2025-11-06 三菱電機株式会社 光モジュール

Also Published As

Publication number Publication date
CN120345142A (zh) 2025-07-18
WO2024134864A1 (ja) 2024-06-27
JP2024091613A (ja) 2024-07-04
JPWO2024134864A1 (https=) 2024-06-27
JP7734768B2 (ja) 2025-09-05
TWI870154B (zh) 2025-01-11
TW202427896A (zh) 2024-07-01

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