JP2018073940A - 半導体レーザ装置の動作条件決定方法 - Google Patents
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
- G02F1/0123—Circuits for the control or stabilisation of the bias voltage, e.g. automatic bias control [ABC] feedback loops
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- H—ELECTRICITY
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- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
- H04B10/505—Laser transmitters using external modulation
- H04B10/5053—Laser transmitters using external modulation using a parallel, i.e. shunt, combination of modulators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0085—Modulating the output, i.e. the laser beam is modulated outside the laser cavity
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/06832—Stabilising during amplitude modulation
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/03—Constructional details, e.g. casings, housings
- H04B1/036—Cooling arrangements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
- H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
- H04B10/079—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using measurements of the data signal
- H04B10/0795—Performance monitoring; Measurement of transmission parameters
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/572—Wavelength control
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/58—Compensation for non-linear transmitter output
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06258—Controlling the frequency of the radiation with DFB-structure
Abstract
【解決手段】この方法は、第1駆動電流が供給される半導体レーザと、第2駆動電流の大きさに応じて光信号を増幅する半導体光増幅部と、第3駆動電流の大きさに応じて半導体レーザ及び半導体光増幅部の温度を制御する温度制御部と、を備える装置の動作条件を決定する方法であって、第1〜第3駆動電流の設定値を入力し、半導体レーザを駆動させ、変調された光信号を出力させる第1工程と、半導体光増幅部から出力され所定距離を伝送した後の光信号の波形に基づいて第2駆動電流の大きさを決定する第2工程と、半導体光増幅部から出力される光信号の波長に基づく第3駆動電流の大きさの決定、及び光信号の光強度に基づく第1駆動電流の大きさの決定を行う第3工程とを含む。
【選択図】図16
Description
最初に、本発明の実施形態の内容を列記して説明する。一実施形態に係る半導体レーザ装置の動作条件決定方法は、第1駆動電流が供給され、入力信号に応じて変調された光信号を出力する半導体レーザと、半導体レーザと光学的に結合され、第2駆動電流の大きさに応じて光信号を増幅する半導体光増幅部と、半導体レーザ及び半導体光増幅部が搭載され、第3駆動電流の大きさに応じて半導体レーザ及び半導体光増幅部の温度を制御する温度制御部と、を備える半導体レーザ装置の動作条件を決定する方法であって、第1〜第3駆動電流の設定値を入力し、半導体レーザを駆動させ、変調された光信号を出力させる第1工程と、半導体光増幅部から出力され所定距離を伝送した後の光信号の波形に基づいて第2駆動電流の大きさを決定する第2工程と、第2工程の後、半導体光増幅部から出力される光信号の波長に基づく第3駆動電流の大きさの決定、及び光信号の光強度に基づく第1駆動電流の大きさの決定を行う第3工程とを含む。
本発明の実施形態に係る半導体レーザ装置の動作条件決定方法の具体例を、以下に図面を参照しつつ説明する。なお、本発明はこれらの例示に限定されるものではなく、特許請求の範囲によって示され、特許請求の範囲と均等の意味及び範囲内でのすべての変更が含まれることが意図される。以下の説明では、図面の説明において同一の要素には同一の符号を付し、重複する説明を省略する。
Claims (5)
- 第1駆動電流が供給され、入力信号に応じて変調された光信号を出力する半導体レーザと、
前記半導体レーザと光学的に結合され、第2駆動電流の大きさに応じて前記光信号を増幅する半導体光増幅部と、
前記半導体レーザ及び前記半導体光増幅部が搭載され、第3駆動電流の大きさに応じて前記半導体レーザ及び前記半導体光増幅部の温度を制御する温度制御部と、
を備える半導体レーザ装置の動作条件を決定する方法であって、
前記第1〜第3駆動電流の設定値を入力し、前記半導体レーザを駆動させ、変調された前記光信号を出力させる第1工程と、
前記半導体光増幅部から出力され所定距離を伝送した後の前記光信号の波形に基づいて前記第2駆動電流の大きさを決定する第2工程と、
前記第2工程の後、前記半導体光増幅部から出力される前記光信号の波長に基づく前記第3駆動電流の大きさの決定、及び前記光信号の光強度に基づく前記第1駆動電流の大きさの決定を行う第3工程と、
を含む、半導体レーザ装置の動作条件決定方法。 - 前記第3工程において、前記第3駆動電流の大きさを決定した後、前記第1駆動電流の大きさを決定する、請求項1に記載の半導体レーザ装置の動作条件決定方法。
- 前記半導体レーザは、駆動電圧の大きさに応じて変調される変調部と、前記第1駆動電流が供給されることで駆動されるレーザ部とを含み、
前記第3工程は、前記光信号の波形に基づいて前記駆動電圧の大きさを決定する工程を含み、前記第3駆動電流の大きさ、前記第1駆動電流の大きさ、前記駆動電圧の大きさの決定を順に行う、請求項1に記載の半導体レーザ装置の動作条件決定方法。 - 前記半導体レーザ及び前記半導体光増幅部が共通の半導体基板上に集積されている、請求項1〜3のいずれか一項に記載の半導体レーザ装置の動作条件決定方法。
- 前記第3工程の後、前記所定距離を伝送した後の伝送ペナルティが許容範囲内か否かを判定する第4工程を更に含み、
前記第4工程において前記伝送ペナルティが前記許容範囲外である場合に前記第2工程を再び行う、請求項1〜4のいずれか一項に記載の半導体レーザ装置の動作条件決定方法。
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JP2016210725A JP6866976B2 (ja) | 2016-10-27 | 2016-10-27 | 半導体レーザ装置の動作条件決定方法 |
US15/795,740 US10298332B2 (en) | 2016-10-27 | 2017-10-27 | Method of controlling semiconductor optical device that includes semiconductor optical amplifier |
CN201711026862.1A CN108011671B (zh) | 2016-10-27 | 2017-10-27 | 控制包括半导体光放大器的半导体光学装置的方法 |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030095737A1 (en) * | 2001-10-09 | 2003-05-22 | Welch David F. | Transmitter photonic integrated circuits (TxPIC) and optical transport networks employing TxPICs |
WO2007094063A1 (ja) * | 2006-02-16 | 2007-08-23 | Fujitsu Limited | 半導体光増幅装置 |
JP2007532980A (ja) * | 2004-04-15 | 2007-11-15 | インフィネラ コーポレイション | Wdm送信ネットワーク用クーラーレス集積回路および浮動波長グリッドフォトニック集積回路(pic) |
JP2010232505A (ja) * | 2009-03-27 | 2010-10-14 | Furukawa Electric Co Ltd:The | 波長可変光源装置 |
US20130121702A1 (en) * | 2011-11-14 | 2013-05-16 | Electronics And Telecommunications Research Institute | Transmitter optical module |
JP2013149949A (ja) * | 2011-12-21 | 2013-08-01 | Sumitomo Electric Device Innovations Inc | 半導体光増幅器の制御方法及び測定方法、並びに半導体光増幅装置 |
WO2016136183A1 (ja) * | 2015-02-23 | 2016-09-01 | 日本電信電話株式会社 | Soa集積ea-dfbレーザ及びその駆動方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11183857A (ja) | 1997-12-24 | 1999-07-09 | Nippon Telegr & Teleph Corp <Ntt> | 光周波数チャープ制御回路及びこれを用いた光強度変調回路 |
US6803604B2 (en) * | 2001-03-13 | 2004-10-12 | Ricoh Company, Ltd. | Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device |
WO2003032547A2 (en) * | 2001-10-09 | 2003-04-17 | Infinera Corporation | Transmitter photonic integrated circuit |
US6862136B2 (en) * | 2002-01-31 | 2005-03-01 | Cyoptics Ltd. | Hybrid optical transmitter with electroabsorption modulator and semiconductor optical amplifier |
US8705904B2 (en) * | 2002-10-08 | 2014-04-22 | Infinera Corporation | Photonic integrated circuits having chirped elements |
JP4639578B2 (ja) | 2003-06-27 | 2011-02-23 | 日本電気株式会社 | 半導体レーザモジュール及びその製造方法 |
JP2006324801A (ja) | 2005-05-17 | 2006-11-30 | Sumitomo Electric Ind Ltd | 光送信モジュール |
JP4934344B2 (ja) * | 2006-04-07 | 2012-05-16 | 日本オプネクスト株式会社 | 半導体光集積素子及び半導体光集積デバイス |
DE102006053030A1 (de) | 2006-11-10 | 2008-05-15 | Dr.Ing.H.C. F. Porsche Ag | Quer- oder Schräglenker |
JP5029688B2 (ja) | 2007-03-29 | 2012-09-19 | 富士通株式会社 | 光伝送装置および光伝送方法 |
JP4794505B2 (ja) | 2007-06-15 | 2011-10-19 | 富士通株式会社 | 半導体光増幅装置、半導体光増幅システム及び半導体光集積素子 |
WO2009008073A1 (ja) * | 2007-07-11 | 2009-01-15 | Fujitsu Limited | 光信号生成器および光信号生成方法 |
JP2009081512A (ja) | 2007-09-25 | 2009-04-16 | Fujitsu Ltd | 光送信装置および設定値決定方法 |
US8543010B2 (en) * | 2010-02-24 | 2013-09-24 | Jds Uniphase Corporation | Bias control in an optical modulator and transmitter |
US9001852B1 (en) * | 2013-09-10 | 2015-04-07 | Google Inc. | Wavelength tunable laser |
JP2014168268A (ja) | 2014-04-22 | 2014-09-11 | Sumitomo Electric Ind Ltd | Pon光伝送システム、局側装置及び光通信方法 |
CN103956652B (zh) * | 2014-04-25 | 2018-08-31 | 南京威宁锐克信息技术有限公司 | 集成调制器的低成本可调谐dfb半导体激光器及制备方法 |
-
2016
- 2016-10-27 JP JP2016210725A patent/JP6866976B2/ja active Active
-
2017
- 2017-10-27 CN CN201711026862.1A patent/CN108011671B/zh active Active
- 2017-10-27 US US15/795,740 patent/US10298332B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030095737A1 (en) * | 2001-10-09 | 2003-05-22 | Welch David F. | Transmitter photonic integrated circuits (TxPIC) and optical transport networks employing TxPICs |
JP2007532980A (ja) * | 2004-04-15 | 2007-11-15 | インフィネラ コーポレイション | Wdm送信ネットワーク用クーラーレス集積回路および浮動波長グリッドフォトニック集積回路(pic) |
WO2007094063A1 (ja) * | 2006-02-16 | 2007-08-23 | Fujitsu Limited | 半導体光増幅装置 |
JP2010232505A (ja) * | 2009-03-27 | 2010-10-14 | Furukawa Electric Co Ltd:The | 波長可変光源装置 |
US20130121702A1 (en) * | 2011-11-14 | 2013-05-16 | Electronics And Telecommunications Research Institute | Transmitter optical module |
JP2013149949A (ja) * | 2011-12-21 | 2013-08-01 | Sumitomo Electric Device Innovations Inc | 半導体光増幅器の制御方法及び測定方法、並びに半導体光増幅装置 |
WO2016136183A1 (ja) * | 2015-02-23 | 2016-09-01 | 日本電信電話株式会社 | Soa集積ea-dfbレーザ及びその駆動方法 |
Cited By (1)
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JP7466773B1 (ja) | 2022-12-23 | 2024-04-12 | 三菱電機株式会社 | 光モジュール |
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US20180123696A1 (en) | 2018-05-03 |
CN108011671A (zh) | 2018-05-08 |
US10298332B2 (en) | 2019-05-21 |
JP6866976B2 (ja) | 2021-04-28 |
CN108011671B (zh) | 2022-09-23 |
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