JP7452632B2 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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JP7452632B2
JP7452632B2 JP2022511136A JP2022511136A JP7452632B2 JP 7452632 B2 JP7452632 B2 JP 7452632B2 JP 2022511136 A JP2022511136 A JP 2022511136A JP 2022511136 A JP2022511136 A JP 2022511136A JP 7452632 B2 JP7452632 B2 JP 7452632B2
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JPWO2021201235A5 (https=
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源宜 窪内
尚 吉村
博 瀧下
美佐稀 内田
道生 根本
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/18—Diffusion lifetime killers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/491—Vertical IGBTs having both emitter contacts and collector contacts in the same substrate side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
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    • H10D62/50—Physical imperfections
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
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    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
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    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
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    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
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    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
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    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
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    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2022511136A 2020-04-01 2021-04-01 半導体装置および半導体装置の製造方法 Active JP7452632B2 (ja)

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JP2020066314 2020-04-01
JP2020066314 2020-04-01
PCT/JP2021/014179 WO2021201235A1 (ja) 2020-04-01 2021-04-01 半導体装置および半導体装置の製造方法

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JPWO2021201235A5 JPWO2021201235A5 (https=) 2022-06-09
JP7452632B2 true JP7452632B2 (ja) 2024-03-19

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US (1) US20220216055A1 (https=)
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CN (1) CN114467180A (https=)
DE (1) DE112021000165T5 (https=)
WO (1) WO2021201235A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7001104B2 (ja) * 2017-12-14 2022-01-19 富士電機株式会社 半導体装置
US20230049926A1 (en) * 2021-08-13 2023-02-16 Semiconductor Components Industries, Llc Epitaxial field stop region for semiconductor devices

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007055352A1 (ja) 2005-11-14 2007-05-18 Fuji Electric Device Technology Co., Ltd. 半導体装置およびその製造方法
JP2013138172A (ja) 2011-11-30 2013-07-11 Denso Corp 半導体装置
WO2017047285A1 (ja) 2015-09-16 2017-03-23 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2017047276A1 (ja) 2015-09-16 2017-03-23 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2019181852A1 (ja) 2018-03-19 2019-09-26 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2020036015A1 (ja) 2018-08-14 2020-02-20 富士電機株式会社 半導体装置および製造方法

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
DE102013216195B4 (de) 2013-08-14 2015-10-29 Infineon Technologies Ag Verfahren zur Nachdotierung einer Halbleiterscheibe
US9754787B2 (en) * 2014-06-24 2017-09-05 Infineon Technologies Ag Method for treating a semiconductor wafer
WO2016204227A1 (ja) * 2015-06-17 2016-12-22 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102016102861B3 (de) * 2016-02-18 2017-05-24 Infineon Technologies Ag Halbleiterbauelemente und Verfahren zum Bilden eines Halbleiterbauelements
JP6733739B2 (ja) * 2016-10-17 2020-08-05 富士電機株式会社 半導体装置
WO2019142706A1 (ja) * 2018-01-17 2019-07-25 富士電機株式会社 半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007055352A1 (ja) 2005-11-14 2007-05-18 Fuji Electric Device Technology Co., Ltd. 半導体装置およびその製造方法
JP2013138172A (ja) 2011-11-30 2013-07-11 Denso Corp 半導体装置
WO2017047285A1 (ja) 2015-09-16 2017-03-23 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2017047276A1 (ja) 2015-09-16 2017-03-23 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2019181852A1 (ja) 2018-03-19 2019-09-26 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2020036015A1 (ja) 2018-08-14 2020-02-20 富士電機株式会社 半導体装置および製造方法

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CN114467180A (zh) 2022-05-10
DE112021000165T5 (de) 2022-07-28
US20220216055A1 (en) 2022-07-07
JPWO2021201235A1 (https=) 2021-10-07
WO2021201235A1 (ja) 2021-10-07

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