CN114467180A - 半导体装置以及半导体装置的制造方法 - Google Patents

半导体装置以及半导体装置的制造方法 Download PDF

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CN114467180A
CN114467180A CN202180005478.1A CN202180005478A CN114467180A CN 114467180 A CN114467180 A CN 114467180A CN 202180005478 A CN202180005478 A CN 202180005478A CN 114467180 A CN114467180 A CN 114467180A
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region
peak
semiconductor substrate
donor
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洼内源宜
吉村尚
泷下博
内田美佐稀
根本道生
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
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    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
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    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
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    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
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    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
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    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
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    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
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    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
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    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202180005478.1A 2020-04-01 2021-04-01 半导体装置以及半导体装置的制造方法 Pending CN114467180A (zh)

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JP2020-066314 2020-04-01
JP2020066314 2020-04-01
PCT/JP2021/014179 WO2021201235A1 (ja) 2020-04-01 2021-04-01 半導体装置および半導体装置の製造方法

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US (1) US20220216055A1 (https=)
JP (1) JP7452632B2 (https=)
CN (1) CN114467180A (https=)
DE (1) DE112021000165T5 (https=)
WO (1) WO2021201235A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7001104B2 (ja) * 2017-12-14 2022-01-19 富士電機株式会社 半導体装置
US20230049926A1 (en) * 2021-08-13 2023-02-16 Semiconductor Components Industries, Llc Epitaxial field stop region for semiconductor devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107408581A (zh) * 2015-09-16 2017-11-28 富士电机株式会社 半导体装置及半导体装置的制造方法
CN109075191A (zh) * 2016-10-17 2018-12-21 富士电机株式会社 半导体装置
US20200152778A1 (en) * 2018-01-17 2020-05-14 Fuji Electric Co., Ltd. Semiconductor device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5104314B2 (ja) * 2005-11-14 2012-12-19 富士電機株式会社 半導体装置およびその製造方法
JP5817686B2 (ja) * 2011-11-30 2015-11-18 株式会社デンソー 半導体装置
DE102013216195B4 (de) 2013-08-14 2015-10-29 Infineon Technologies Ag Verfahren zur Nachdotierung einer Halbleiterscheibe
US9754787B2 (en) * 2014-06-24 2017-09-05 Infineon Technologies Ag Method for treating a semiconductor wafer
WO2016204227A1 (ja) * 2015-06-17 2016-12-22 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6477897B2 (ja) * 2015-09-16 2019-03-06 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102016102861B3 (de) * 2016-02-18 2017-05-24 Infineon Technologies Ag Halbleiterbauelemente und Verfahren zum Bilden eines Halbleiterbauelements
DE112019000094T5 (de) * 2018-03-19 2020-09-24 Fuji Electric Co., Ltd. Halbleitervorrichtung und verfahren zum herstellen einerhalbleitervorrichtung
JP6958740B2 (ja) * 2018-08-14 2021-11-02 富士電機株式会社 半導体装置および製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107408581A (zh) * 2015-09-16 2017-11-28 富士电机株式会社 半导体装置及半导体装置的制造方法
CN109075191A (zh) * 2016-10-17 2018-12-21 富士电机株式会社 半导体装置
US20200152778A1 (en) * 2018-01-17 2020-05-14 Fuji Electric Co., Ltd. Semiconductor device

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DE112021000165T5 (de) 2022-07-28
US20220216055A1 (en) 2022-07-07
JPWO2021201235A1 (https=) 2021-10-07
WO2021201235A1 (ja) 2021-10-07

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