JPWO2021201235A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2021201235A5
JPWO2021201235A5 JP2022511136A JP2022511136A JPWO2021201235A5 JP WO2021201235 A5 JPWO2021201235 A5 JP WO2021201235A5 JP 2022511136 A JP2022511136 A JP 2022511136A JP 2022511136 A JP2022511136 A JP 2022511136A JP WO2021201235 A5 JPWO2021201235 A5 JP WO2021201235A5
Authority
JP
Japan
Prior art keywords
concentration
semiconductor device
region
peak
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022511136A
Other languages
English (en)
Japanese (ja)
Other versions
JP7452632B2 (ja
JPWO2021201235A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2021/014179 external-priority patent/WO2021201235A1/ja
Publication of JPWO2021201235A1 publication Critical patent/JPWO2021201235A1/ja
Publication of JPWO2021201235A5 publication Critical patent/JPWO2021201235A5/ja
Application granted granted Critical
Publication of JP7452632B2 publication Critical patent/JP7452632B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

JP2022511136A 2020-04-01 2021-04-01 半導体装置および半導体装置の製造方法 Active JP7452632B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020066314 2020-04-01
JP2020066314 2020-04-01
PCT/JP2021/014179 WO2021201235A1 (ja) 2020-04-01 2021-04-01 半導体装置および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPWO2021201235A1 JPWO2021201235A1 (https=) 2021-10-07
JPWO2021201235A5 true JPWO2021201235A5 (https=) 2022-06-09
JP7452632B2 JP7452632B2 (ja) 2024-03-19

Family

ID=77929253

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022511136A Active JP7452632B2 (ja) 2020-04-01 2021-04-01 半導体装置および半導体装置の製造方法

Country Status (5)

Country Link
US (1) US20220216055A1 (https=)
JP (1) JP7452632B2 (https=)
CN (1) CN114467180A (https=)
DE (1) DE112021000165T5 (https=)
WO (1) WO2021201235A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7001104B2 (ja) * 2017-12-14 2022-01-19 富士電機株式会社 半導体装置
US20230049926A1 (en) * 2021-08-13 2023-02-16 Semiconductor Components Industries, Llc Epitaxial field stop region for semiconductor devices

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5104314B2 (ja) * 2005-11-14 2012-12-19 富士電機株式会社 半導体装置およびその製造方法
JP5817686B2 (ja) * 2011-11-30 2015-11-18 株式会社デンソー 半導体装置
DE102013216195B4 (de) 2013-08-14 2015-10-29 Infineon Technologies Ag Verfahren zur Nachdotierung einer Halbleiterscheibe
US9754787B2 (en) * 2014-06-24 2017-09-05 Infineon Technologies Ag Method for treating a semiconductor wafer
WO2016204227A1 (ja) * 2015-06-17 2016-12-22 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6428945B2 (ja) * 2015-09-16 2018-11-28 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6477897B2 (ja) * 2015-09-16 2019-03-06 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102016102861B3 (de) * 2016-02-18 2017-05-24 Infineon Technologies Ag Halbleiterbauelemente und Verfahren zum Bilden eines Halbleiterbauelements
JP6733739B2 (ja) * 2016-10-17 2020-08-05 富士電機株式会社 半導体装置
WO2019142706A1 (ja) * 2018-01-17 2019-07-25 富士電機株式会社 半導体装置
DE112019000094T5 (de) * 2018-03-19 2020-09-24 Fuji Electric Co., Ltd. Halbleitervorrichtung und verfahren zum herstellen einerhalbleitervorrichtung
JP6958740B2 (ja) * 2018-08-14 2021-11-02 富士電機株式会社 半導体装置および製造方法

Similar Documents

Publication Publication Date Title
Wolstenholme et al. An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high‐resolution electron microscopy observations
JP7188539B2 (ja) 半導体装置
US3701696A (en) Process for simultaneously gettering,passivating and locating a junction within a silicon crystal
JPWO2021201235A5 (https=)
DE112020001040T5 (de) Halbleitervorrichtung und herstellungsverfahren einer halbleitervorrichtung
CN109119334A (zh) 半导体结构的表面修正方法以及3d存储器件的制造方法
DE112021001364B4 (de) Halbleitervorrichtung
JPWO2021201216A5 (https=)
TWI394275B (zh) 增強遷移率之ＳｉＧｅ異質接面雙極電晶體
DE112020001043T5 (de) Halbleitervorrichtung und herstellungsverfahren einer halbleitervorrichtung
CN100414708C (zh) 制造横向掺杂沟道的方法和半导体单元的阵列
EP0005744B1 (de) Verfahren zum Aufwachsen von Epitaxieschichten auf selektiv hochdotierten Siliciumsubstraten
JP7452632B2 (ja) 半導体装置および半導体装置の製造方法
US9331160B2 (en) Split-gate non-volatile memory cells having gap protection zones
DE112022000087T5 (de) Halbleitervorrichtung
US4049478A (en) Utilization of an arsenic diffused emitter in the fabrication of a high performance semiconductor device
DE4412297C2 (de) Verfahren zur Rekombinationslebensdauermessung und Vorrichtung zur Durchführung des Verfahrens
Hayrapetyan et al. Direct interband light absorption in a strongly oblated ellipsoidal quantum dot
Goldman et al. Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures
US6057203A (en) Integrated circuit capacitor
US3990093A (en) Deep buried layers for semiconductor devices
JPS6295860A (ja) 半導体装置の製造方法
Madziwa-Nussinov et al. Ion orbits in plasma etching of semiconductors
Choi et al. Synthesis, Characterization, and Memory Application of Germanium Nanocrystals in Dielectric Matrices
Tanaka et al. Reverse short-channel effect of threshold voltage in LOCOS parasitic MOSFETs