JP7394203B2 - 基板処理装置 - Google Patents
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- 238000012545 processing Methods 0.000 title claims description 233
- 239000000758 substrate Substances 0.000 title claims description 97
- 239000007789 gas Substances 0.000 claims description 38
- 239000007788 liquid Substances 0.000 claims description 35
- 239000012530 fluid Substances 0.000 claims description 23
- 238000005259 measurement Methods 0.000 claims description 2
- 230000002378 acidificating effect Effects 0.000 description 24
- 239000000126 substance Substances 0.000 description 24
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 239000003960 organic solvent Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 239000002699 waste material Substances 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/0039—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours with flow guiding by feed or discharge devices
- B01D46/0041—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours with flow guiding by feed or discharge devices for feeding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B15/00—Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area
- B08B15/02—Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area using chambers or hoods covering the area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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- Power Engineering (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Polarising Elements (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
3 積層ユニット
4 排気管
5 流路切替部
7 外気導入部
9 基板
10 制御部
20 支持フレーム
31 処理部
41 第1排気経路
42 第2排気経路
46 圧力調整部
47 液体噴出部
48 排液管
53a~53c 排気開閉弁
61a~61c 集合管
73a~73c 外気開閉弁
79 シャッタ
311 (処理部の)長孔
411 (排気管の)下端部
412 (第1排気経路の)上端
461 圧力センサ
462 流量調整機構
711 外気導入口
Claims (11)
- 基板処理装置であって、
それぞれが複数種類の処理流体を基板に供給可能であり、上下方向に配列された複数の処理部と、
前記複数の処理部から上方に向かうとともに、前記複数の処理部からの排気がそれぞれ流入する複数の排気管と、
前記複数の処理部よりも上方に配置され、前記複数種類の処理流体を分類した2以上の流体区分にそれぞれ対応する2以上の集合管と、
それぞれが一の排気管の上端部に設けられるとともに、前記上端部を前記2以上の集合管に接続し、前記排気管を流れる排気の流路を前記2以上の集合管の間で切り替える複数の流路切替部と、
それぞれが前記2以上の集合管に接続されるとともに、前記複数の流路切替部に対応する複数の外気導入部と、
前記複数の処理部において用いられる処理流体に応じて前記複数の流路切替部を制御する制御部と、
を備え、
前記2以上の集合管が、前記複数の処理部と重なった状態にて前記上下方向において積層し、
前記2以上の集合管の一方の側方に前記複数の流路切替部が接続され、前記2以上の集合管の他方の側方に前記複数の外気導入部が接続されることを特徴とする基板処理装置。 - 請求項1に記載の基板処理装置であって、
前記複数の流路切替部のそれぞれは、2以上の排気開閉弁を備え、
前記複数の外気導入部のそれぞれは、2以上の外気開閉弁を備え、
前記2以上の排気開閉弁と、前記2以上の外気開閉弁は、前記2以上の集合管を挟んで対向することを特徴とする基板処理装置。 - 請求項1または2に記載の基板処理装置であって、
前記複数の処理部を支持する支持フレームをさらに備え、
前記2以上の集合管が、前記支持フレームに対して固定されることを特徴とする基板処理装置。 - 請求項1ないし3のいずれか1つに記載の基板処理装置であって、
前記2以上の集合管が、前記上下方向に略垂直な長手方向に延びており、
前記基板処理装置が、前記複数の処理部、前記複数の排気管および前記複数の流路切替部の集合を積層ユニットとして、前記積層ユニットと同様の構成を有するとともに、前記積層ユニットに対して前記長手方向に位置するもう1つの積層ユニットをさらに備えることを特徴とする基板処理装置。 - 請求項1ないし4のいずれか1つに記載の基板処理装置であって、
各排気管が、
処理部から上方に延びる第1排気経路と、
前記第1排気経路の上端から前記上下方向に略垂直な方向に延びる部位を有し、流路切替部に接続される第2排気経路と、
を備え、
前記複数の排気管における複数の第1排気経路の上端が互いに近接して配置され、前記複数の第1排気経路の長さが互いに相違し、
前記複数の排気管における複数の第2排気経路の長さが互いに相違することを特徴とする基板処理装置。 - 請求項1ないし5のいずれか1つに記載の基板処理装置であって、
各処理部が、前記上下方向に延びる長孔を介して、前記上下方向に延びる排気管と接続されることを特徴とする基板処理装置。 - 請求項1ないし6のいずれか1つに記載の基板処理装置であって、
前記複数の排気管内に所定の液体をそれぞれ噴出する複数の液体噴出部と、
前記複数の排気管の下端部から下方に向かう複数の排液管と、
をさらに備えることを特徴とする基板処理装置。 - 請求項1ないし7のいずれか1つに記載の基板処理装置であって、
前記複数の排気管にそれぞれ設けられる複数の圧力調整部をさらに備え、
各圧力調整部が、
排気管内の圧力を測定する圧力センサと、
前記圧力センサの測定値に基づいて前記排気管内を流れる前記排気の流量を調整する流量調整機構と、
を備えることを特徴とする基板処理装置。 - 請求項8に記載の基板処理装置であって、
前記各圧力調整部が、処理部の排気口に隣接する領域に配置されることを特徴とする基板処理装置。 - 請求項1ないし9のいずれか1つに記載の基板処理装置であって、
各流路切替部に対応する外気導入部が、前記各流路切替部により前記排気の流路として選択された集合管を除く集合管に外気を導入することを特徴とする基板処理装置。 - 請求項10に記載の基板処理装置であって、
各外気導入部が、前記2以上の集合管に連通する外気導入口の開口面積を変更するシャッタを有することを特徴とする基板処理装置。
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JP6739285B2 (ja) * | 2016-08-24 | 2020-08-12 | 東京エレクトロン株式会社 | 基板処理装置 |
JP7023065B2 (ja) | 2016-09-13 | 2022-02-21 | 株式会社Screenホールディングス | 基板処理装置 |
JP7036642B2 (ja) * | 2018-03-23 | 2022-03-15 | 株式会社Screenホールディングス | 基板処理装置及びその排気方法 |
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JP2000114229A (ja) | 1998-09-29 | 2000-04-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2012009511A (ja) | 2010-06-22 | 2012-01-12 | Tokyo Electron Ltd | 流路切替え装置、処理装置、流路切替え方法及び処理方法並びに記憶媒体 |
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US11915945B2 (en) | 2024-02-27 |
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