JP2020047897A - 基板処理装置 - Google Patents
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/67017—Apparatus for fluid treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/0039—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours with flow guiding by feed or discharge devices
- B01D46/0041—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours with flow guiding by feed or discharge devices for feeding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B15/00—Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area
- B08B15/02—Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area using chambers or hoods covering the area
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract
Description
3 積層ユニット
4 排気管
5 流路切替部
7 外気導入部
9 基板
10 制御部
20 支持フレーム
31 処理部
41 第1排気経路
42 第2排気経路
46 圧力調整部
47 液体噴出部
48 排液管
53a〜53c 排気開閉弁
61a〜61c 集合管
73a〜73c 外気開閉弁
79 シャッタ
311 (処理部の)長孔
411 (排気管の)下端部
412 (第1排気経路の)上端
461 圧力センサ
462 流量調整機構
711 外気導入口
Claims (11)
- 基板処理装置であって、
それぞれが複数種類の処理流体を基板に供給可能であり、上下方向に配列された複数の処理部と、
前記複数の処理部から上方に向かうとともに、前記複数の処理部からの排気がそれぞれ流入する複数の排気管と、
前記複数の処理部よりも上方に配置され、前記複数種類の処理流体を分類した2以上の流体区分にそれぞれ対応する2以上の集合管と、
それぞれが一の排気管の上端部に設けられるとともに、前記上端部を前記2以上の集合管に接続し、前記排気管を流れる排気の流路を前記2以上の集合管の間で切り替える複数の流路切替部と、
前記複数の処理部において用いられる処理流体に応じて前記複数の流路切替部を制御する制御部と、
を備えることを特徴とする基板処理装置。 - 請求項1に記載の基板処理装置であって、
前記2以上の集合管が、前記上下方向において前記複数の処理部と重なることを特徴とする基板処理装置。 - 請求項1または2に記載の基板処理装置であって、
前記複数の処理部を支持する支持フレームをさらに備え、
前記2以上の集合管が、前記支持フレームに対して固定されることを特徴とする基板処理装置。 - 請求項1ないし3のいずれか1つに記載の基板処理装置であって、
前記2以上の集合管が、前記上下方向に略垂直な長手方向に延びており、
前記基板処理装置が、前記複数の処理部、前記複数の排気管および前記複数の流路切替部の集合を積層ユニットとして、前記積層ユニットと同様の構成を有するとともに、前記積層ユニットに対して前記長手方向に位置するもう1つの積層ユニットをさらに備えることを特徴とする基板処理装置。 - 請求項1ないし4のいずれか1つに記載の基板処理装置であって、
各排気管が、
処理部から上方に延びる第1排気経路と、
前記第1排気経路の上端から前記上下方向に略垂直な方向に延びる部位を有し、流路切替部に接続される第2排気経路と、
を備え、
前記複数の排気管における複数の第1排気経路の上端が互いに近接して配置され、前記複数の第1排気経路の長さが互いに相違し、
前記複数の排気管における複数の第2排気経路の長さが互いに相違し、
前記複数の排気管に含まれる2つの排気管の各組合せにおいて、一方の排気管における前記第1排気経路の長さが他方の排気管における前記第1排気経路よりも長く、前記一方の排気管における前記第2排気経路の長さが前記他方の排気管における前記第2排気経路よりも短いことを特徴とする基板処理装置。 - 請求項1ないし5のいずれか1つに記載の基板処理装置であって、
各処理部が、前記上下方向に延びる長孔を介して、前記上下方向に延びる排気管と接続されることを特徴とする基板処理装置。 - 請求項1ないし6のいずれか1つに記載の基板処理装置であって、
前記複数の排気管内に所定の液体をそれぞれ噴出する複数の液体噴出部と、
前記複数の排気管の下端部から下方に向かう複数の排液管と、
をさらに備えることを特徴とする基板処理装置。 - 請求項1ないし7のいずれか1つに記載の基板処理装置であって、
前記複数の排気管にそれぞれ設けられる複数の圧力調整部をさらに備え、
各圧力調整部が、
排気管内の圧力を測定する圧力センサと、
前記圧力センサの測定値に基づいて前記排気管内を流れる前記排気の流量を調整する流量調整機構と、
を備えることを特徴とする基板処理装置。 - 請求項8に記載の基板処理装置であって、
前記各圧力調整部が、処理部の排気口に隣接する領域に配置されることを特徴とする基板処理装置。 - 請求項1ないし9のいずれか1つに記載の基板処理装置であって、
それぞれが前記2以上の集合管に接続されるとともに、前記複数の流路切替部に対応する複数の外気導入部をさらに備え、
各流路切替部に対応する外気導入部が、前記各流路切替部により前記排気の流路として選択された集合管を除く集合管に外気を導入することを特徴とする基板処理装置。 - 請求項10に記載の基板処理装置であって、
各外気導入部が、前記2以上の集合管に連通する外気導入口の開口面積を変更するシャッタを有することを特徴とする基板処理装置。
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JP2018177591A JP7203545B2 (ja) | 2018-09-21 | 2018-09-21 | 基板処理装置 |
CN201980061111.4A CN112740369A (zh) | 2018-09-21 | 2019-08-22 | 基板处理装置 |
KR1020237022957A KR20230107414A (ko) | 2018-09-21 | 2019-08-22 | 기판 처리 장치 |
US17/270,964 US11915945B2 (en) | 2018-09-21 | 2019-08-22 | Substrate processing apparatus |
KR1020217011698A KR102554698B1 (ko) | 2018-09-21 | 2019-08-22 | 기판 처리 장치 |
PCT/JP2019/032884 WO2020059414A1 (ja) | 2018-09-21 | 2019-08-22 | 基板処理装置 |
TW108130731A TWI720603B (zh) | 2018-09-21 | 2019-08-28 | 基板處理裝置 |
TW110144309A TWI773600B (zh) | 2018-09-21 | 2019-08-28 | 基板處理裝置 |
TW110102660A TWI751895B (zh) | 2018-09-21 | 2019-08-28 | 基板處理裝置 |
JP2022208189A JP7394203B2 (ja) | 2018-09-21 | 2022-12-26 | 基板処理装置 |
JP2023200001A JP2024009266A (ja) | 2018-09-21 | 2023-11-27 | 基板処理装置 |
US18/420,454 US20240194497A1 (en) | 2018-09-21 | 2024-01-23 | Substrate processing apparatus |
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US (2) | US11915945B2 (ja) |
JP (3) | JP7203545B2 (ja) |
KR (2) | KR102554698B1 (ja) |
CN (1) | CN112740369A (ja) |
TW (3) | TWI720603B (ja) |
WO (1) | WO2020059414A1 (ja) |
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KR20230138403A (ko) | 2022-03-23 | 2023-10-05 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 |
TWI837562B (zh) * | 2021-01-25 | 2024-04-01 | 日商國際電氣股份有限公司 | 基板處理裝置、半導體裝置之製造方法、壓力控制裝置及基板處理程式 |
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JP2023020664A (ja) * | 2021-07-30 | 2023-02-09 | 株式会社Screenホールディングス | 基板処理装置 |
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JP2016092143A (ja) * | 2014-10-31 | 2016-05-23 | 東京エレクトロン株式会社 | 基板液処理装置 |
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JP3672444B2 (ja) | 1998-09-29 | 2005-07-20 | 大日本スクリーン製造株式会社 | 基板処理装置 |
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TWI837562B (zh) * | 2021-01-25 | 2024-04-01 | 日商國際電氣股份有限公司 | 基板處理裝置、半導體裝置之製造方法、壓力控制裝置及基板處理程式 |
KR20230138403A (ko) | 2022-03-23 | 2023-10-05 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 |
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